KR100649189B1 - Method for manufacturing organic thin film transistor, organic thin film transistor manufactured by this method, and flat panel display device comprising the organic thin film transistor - Google Patents

Abstract

 The present invention provides a method for manufacturing an organic thin film transistor which can obtain excellent device characteristics by improving pattern precision of an organic semiconductor layer.

In the method of manufacturing an organic thin film transistor according to the present invention, a plurality of recesses are formed in an organic insulating film formed on a substrate, and source and drain electrodes are formed so that source and drain electrodes are independently disposed in any of the recesses. And forming an organic semiconductor layer in contact with the source and drain electrodes in the remaining recesses.

 OTFT, organic semiconductor layer, guide portion, recessed portion, organic insulating film

Description

TECHNICAL OF MANUFACTURING ORGANIC THIN FILM TRANSISTOR, ORGANIC THIN FILM TRANSISTOR MANUFACTURED BY THE METHOD, AND FLAT PANEL DISPLAY DEVICE HAVING THE ORGANIC THIN FILM TRANSISTOR}

1 is a cross-sectional view illustrating an organic thin film transistor according to an exemplary embodiment of the present invention.

2A to 2F and 3 are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to an exemplary embodiment of the present invention.

4 is a cross-sectional view illustrating an organic thin film transistor according to another exemplary embodiment of the present invention.

5 is a cross-sectional view illustrating a flat panel display device having an organic thin film transistor according to an exemplary embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film transistor, and more particularly, to a method for manufacturing an organic thin film transistor, an organic thin film transistor manufactured by the method, and a flat panel display device having the organic thin film transistor.

Recently, research on organic thin film transistors (OTFTs, OTFTs) is being actively conducted due to their applicability to applications such as active display devices, smart cards, inventory items or price indicators.

The OTFT is composed of an organic semiconductor layer instead of a silicon layer, and is classified into a low molecular weight OTFT such as pentacene and a high molecular OTFT such as polythiophene series according to the organic material of the organic semiconductor layer. Since the process is possible and the flexibility can be ensured, it is easy to be applied to a flat panel display device, in particular, as a driving element of a flexible display device such as an electroluminescent (EL) display device.

The OTFT typically has a structure in which a gate electrode and an organic semiconductor layer are formed on a substrate with a gate insulating layer interposed therebetween, and the source and drain electrodes are spaced apart from each other by contacting both sides of the gate electrode while being in contact with the organic semiconductor layer.

The OTFT must be patterned for each unit in order to prevent crosstalk between other adjacent OTFTs, and for this purpose, the organic semiconductor layer of the OTFT must be insulated from the organic semiconductor layer of another adjacent OTFT.

However, organic materials such as pentacene or polythiophene have poor chemical and optical stability, which not only complicates and makes the patterning process of the OTFT difficult, but also does not improve the pattern precision even after the patterning of the OTFT. There is a problem that it is likely to cause a decrease in device characteristics of the OTFT.

SUMMARY OF THE INVENTION The present invention has been made to solve the problems of the prior art as described above, and an object thereof is to provide a method of manufacturing an organic thin film transistor which can obtain excellent device characteristics by improving pattern precision of an organic semiconductor layer.

Another object of the present invention is to provide an organic thin film transistor manufactured by the above-described method.

In addition, another object of the present invention is to provide a flat panel display device having the organic thin film transistor described above.

In order to achieve the object of the present invention as described above, the organic thin film transistor according to the present invention includes a gate insulating film, a gate electrode formed on one surface of the gate insulating film, and an organic insulating film formed on the other surface of the gate insulating film, The insulating film includes a guide portion formed on the organic insulating film so that the source and drain electrodes and the organic semiconductor layer are positioned on the organic insulating film.

The guide portion may include first and second recesses disposed on the organic insulating layer and spaced apart from each other, and a third recess disposed on the first and second recesses while being connected to the first and second recesses. Electrodes are formed in the first and second recesses, and an organic semiconductor layer is formed in the third recesses. In addition, the source and drain electrodes and the organic semiconductor layer are formed in the form of being embedded in the first and second concave portions and the third concave portions, respectively, the first to third concave portions each have a rectangular cross-sectional shape.

In addition, the organic insulating film is composed of a negative photoresist or a positive photoresist.

The organic insulating film, the gate insulating film, and the gate electrode may be sequentially stacked on the substrate, and the gate electrode, the gate insulating film, and the organic insulating film may be sequentially stacked on the substrate.

In order to achieve the object of the present invention as described above, in the method of manufacturing an organic thin film transistor according to the present invention, a plurality of recesses are formed in the organic insulating film formed on the substrate, and the source and drain electrodes are formed in any of the recesses. Forming source and drain electrodes so as to be disposed independently of each other, and forming an organic semiconductor layer in contact with the source and drain electrodes in the remaining recesses.

The recesses may include first and second recesses disposed on the organic insulating layer and spaced apart from each other, and third recesses disposed on the first and second recesses while being connected to the first and second recesses. The source and drain electrodes are formed in the form of the first and second recesses, respectively, and the organic semiconductor layer is formed in the form of the third recesses so that the organic semiconductor layer is in contact with the source and drain electrodes.

Also, forming the recesses in the organic insulating film includes forming an organic insulating film on the substrate, exposing the organic insulating film using a halftone mask, and developing the exposed organic insulating film, wherein the organic insulating film is negative. Photoresist or positive photoresist.

In addition, the source and drain electrodes are formed by applying a source and drain electrode material to the first and second concave portions of the organic insulating film by an inkjet method, and curing the substrate on which the source and drain electrode materials are applied.

Here, the source and drain electrode material is polyethylene dioxythiophene (PEDOT), poly aniline (PANI), conductive polymer, Ag nanocomposite, Cu nanocomposite, Au nanocomposite, Pt nanocomposite, carbon nanocomposite It may include a material selected from. Alternatively, the source and drain electrode materials may be formed by patterning a material including metal nanoparticles having a work function value greater than 0.5 eV minus the highest occupied molecular orbital (HOMO) value of the organic semiconductor layer, or a material including carbon nanoparticles and an organic binder. It may include a material formed by coating and then baking. In this case, the metal nanoparticles may include at least one of Ag nanoparticles, Cu nanoparticles, Au nanoparticles and Pt nanoparticles.

In addition, the organic semiconductor layer is formed by applying an organic semiconductor material to the third concave portion of the organic insulating film by an inkjet method, and curing the substrate coated with the organic semiconductor material. At this time, the organic semiconductor material is pentacene (pentacene), tetracene (tetracene), anthracene (anthracene), naphthalene (naphthalene), alpha-6-thiophene (α-6-thiopene), alpha-4-thiophene (α) 4-thiopene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, Perylene tetracarboxylic dianhydride and its derivatives, polyparaperylene vinylene and its derivatives, polyfluorene and its derivatives, polyparaphenylene and its derivatives, oligoacenes of naphthalene and derivatives thereof , Oligoacenes of alpha-5-thiophene (α-5-thiopene) and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid Dianhydrides and derivatives thereof, fr Phthalocyanine and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, substituted or unsubstituted thiophenes It is made of an organic semiconductor material such as conjugated polymer derivatives containing (thiophene), conjugated polymer derivatives containing substituted fluorene (fluorene).

Further, before forming the organic insulating film, the gate electrode and the gate insulating film may be sequentially stacked on the substrate, and after the organic semiconductor layer is formed, the gate insulating film and the gate electrode are sequentially formed on the substrate on which the organic semiconductor layer is formed. It may be laminated.

In order to achieve the object of the present invention as described above, the flat panel display device according to the present invention includes a pixel portion consisting of a drive element formed on a substrate and a display portion electrically connected to the drive element, the drive element is a gate insulating film, A gate electrode formed on one surface of the gate insulating film, and an organic insulating film formed on the other surface of the gate insulating film, wherein the organic insulating film is formed on the organic insulating film so that the source and drain electrodes and the organic semiconductor layer are positioned on the organic insulating film. An organic thin film transistor including a guide unit is included.

Here, the display unit has a structure in which the first electrode, the organic light emitting layer, and the second electrode are sequentially stacked.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

First, an organic thin film transistor according to an exemplary embodiment of the present invention will be described with reference to FIG. 1.

As shown in FIG. 1, the first and second recesses 21a and 21b and the first and second recesses 21a and 21b, which are arranged side by side on the substrate 10 and are arranged side by side, are connected to the first and second recesses 21a and 21b. And a guide portion including a third recessed portion 22 disposed on the second recessed portions 21a and 21b, and the source and drain electrodes 32a and 32b are formed on the organic insulating layer 20. And are respectively formed in the first and second recesses 21a and 21b, respectively, and the organic semiconductor layer 22 is embedded in the third recess 22 while contacting the source and drain electrodes 32a and 32b. Is formed. The gate insulating film 50 is formed on the organic semiconductor layer 22 and the organic insulating film 20, and the gate electrode 60 is formed on the gate insulating film 50 on the organic semiconductor layer 22.

Herein, the substrate 10 may be made of a transparent insulating substrate, and glass or plastic may be used as the material, and polyethylene terephthalate (PET), polyethylene naphtahlate (PEN), or polyether may be used as the plastic material. Polyether sulfone (PES), polyether imide, polyphenylene sulfide (PPS), polyallyate, polyimide, polycarbonate (PC), poly Any one selected from acrylate (PAR), cellulose triacetate, and cellulose acetate propionate (CAP) is used.

The organic insulating film 20 is composed of a negative photoresist or a positive photoresist, and the first and second concave portions 21a and 21b and the third concave portion 22 of the organic insulating film 20 each have a rectangular cross-sectional shape. It has a shape.

The source and drain electrodes 32a and 32b include a conductive material such as polyethylene dioxythiophene (PEDOT), poly aniline (PANI), conductive polymer, metal nanocomposite, and carbon nanocomposite. Here, the metal nanocomposite may be a material selected from Ag nanocomposites, Cu nanocomposites, Au nanocomposites, and Pt nanocomposites.

Alternatively, the source and drain electrodes 32a and 32b may include a material formed by pattern-coating with a material including metal nanoparticles or carbon nanoparticles and an organic binder, and then baking. Here, the work function of the metal nanoparticles has a value greater than the value of the highest occupied molecular orbital (HOMO) value of the organic semiconductor layer to be formed in a subsequent process, minus 0.5 eV. Particles, Cu nanoparticles, Au nanoparticles or Pt nanoparticles and the like can be used.

The organic semiconductor layer 42 includes pentacene, tetracene, anthracene, naphthalene, alpha-6-thiopene, and alpha-4-thiophene ( α-4-thiopene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives , Perylene tetracarboxylic dianhydride and its derivatives, polyparaperylenevinylene and its derivatives, polyfluorene and its derivatives, polyparaphenylene and its derivatives, oligoacenes of naphthalene and their Derivatives, oligoacenes of alpha-5-thiopene and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic Acid dianhydride and its derivatives, phthaloxy Phthalocyanine and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, substituted or unsubstituted thiophenes ( conjugated polymer derivatives containing thiophene), conjugated polymer derivatives containing substituted fluorenes, and the like.

The gate insulating film 50 is made of an organic insulating film such as benzocyclobutene (BCB), polyimide, polyvinylphenol, parylene, and the gate electrode 60 is formed of Ag, Cu, Metals such as Au, Pt, Mo, MoW, Al, AlNd Cr, Al / Cr.

Next, the method of manufacturing the organic thin film transistor described above with reference to FIGS. 2A to 2F will be described.

As shown in FIG. 2A, a negative photoresist film is formed on the glass or plastic substrate 10 using the organic insulating film 20.

As shown in FIG. 2B, the organic insulating film 20 is exposed using the halftone mask 110, and the organic insulating film 20 of the unexposed part is developed and removed to be spaced apart from each other in the organic insulating film 20. First and second recesses 21a and 21b which are arranged side by side, and are arranged on the first and second recesses 21a and 21b while being connected to the first and second recesses 21a and 21b. The recesses 22 are formed, respectively. Here, the halftone mask 110 includes light blocking regions 111a and 111b that completely block light in response to the first and second recesses 21a and 21b, and the first and second recesses 21a and 21b. The semi-transmissive areas 112a, 112b and 112c that transmit light about 1/2 of the third concave portion 22 except for the first and second concave portions 21a and 21b and the third concave portion ( Corresponding to portions except 22), the light transmitting regions 113a and 113b completely transmit light.

On the other hand, instead of the negative photoresist film described above, the positive photoresist film may be used as the organic insulating film 20. In this case, the halftone mask is formed in the opposite direction to the halftone mask 110 described above, and in contrast to the negative photoresist film. The exposed portion is removed by

That is, as shown in FIG. 3, the halftone mask 120 transmits light completely through the light transmission regions 121a and 121b corresponding to the first and second recesses 21a and 21b, and the first and second portions. Semi-transmissive regions 122a, 122b and 122c that transmit light about half of the light corresponding to the third recesses 22 except for the recesses 21a and 21b, and the first and second recesses 21a and 21b. ) And light blocking regions 123a and 123b that completely block light in correspondence with the portions except for the third recess 22.

As shown in Fig. 2C, source and drain electrode materials 31a and 31b are applied to the first and second recesses 21a and 21b, respectively, by an inkjet method. That is, the source and drain electrode materials 31a and 31b are applied to the first and second recesses 21a and 21b of the organic insulating film 20, respectively, from the inkjet head (not shown). At this time, the coating amount of the source and drain electrode materials 31a and 31b may be approximately 1 × 10 ⁻¹⁵ L, which does not limit the scope of the present invention, and it is natural that the coating amount can be appropriately adjusted.

The source and drain electrode materials 31a and 31b include conductive materials such as polyethylene dioxythiophene (PEDOT), poly aniline (PANI), conductive polymers, metal nanocomposites, and carbon nanocomposites. The metal nanocomposite may be a material selected from Ag nanocomposites, Cu nanocomposites, Au nanocomposites, and Pt nanocomposites.

Alternatively, the source and drain electrode materials 31a and 31b may include a material formed by pattern-coating with a metal nanoparticle or a material including carbon nanoparticles and an organic binder and then baking. Here, the work function of the metal nanoparticles has a value greater than the value of the highest occupied molecular orbital (HOMO) value of the organic semiconductor layer to be formed in a subsequent process, minus 0.5 eV. Ag nanoparticles, Cu nanoparticles, Au nanoparticles or Pt nanoparticles may be used.

As shown in FIG. 2D, a source and a drain are evaporated while evaporating the solvent contained in the applied source and drain electrode materials 31a and 31b by performing a curing process such as ultraviolet curing and thermal curing. The electrode materials 31a and 31b are flowed to form source and drain electrodes 32a and 32b embedded in the first and second recesses 21a and 21b.

As such, the source and drain electrodes 32a and 32b are formed in the organic insulating film 20 by forming recesses 21a and 21b and applying and curing the source and drain electrode materials 31a and 31b by an inkjet method. As a result, the photolithography and etching processes can be eliminated to simplify the process. In addition, since the sidewalls of the recesses 21a and 21b serve as banks during curing, the source and drain electrode materials 31a and 31b flow uniformly in the recesses 21a and 21b, which may occur when the inkjet method is applied. The coffee stain effect, that is, the edge portion of the pattern becomes thicker than other portions can be prevented, so that the pattern precision of the source and drain electrodes 32a and 32b can be improved.

As shown in Fig. 2E, the organic semiconductor material 41 described above is applied to the third concave portion 22 by an inkjet method similarly to the source and drain electrode materials 31a and 31b. At this time, the coating amount of the organic semiconductor material 41 can be approximately 1 × 10 ^-12 L, which does not limit the scope of the present invention, and it is natural that the coating amount can be appropriately adjusted.

 In this case, the organic semiconductor material 41 may include pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, and alpha-4-thi. Offen (α-4-thiopene), perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and Derivatives thereof, perylene tetracarboxylic dianhydride and derivatives thereof, polyparaperylenevinylene and derivatives thereof, polyfluorene and derivatives thereof, polyparaphenylene and derivatives thereof, oligoacenes of naphthalene and Derivatives thereof, oligoacenes of alpha-5-thiopene and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetra Carboxylic dianhydrides and derivatives thereof, Phthalocyanine and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, substituted or unsubstituted teas Conjugated polymer derivatives containing thiophene, conjugated polymer derivatives containing substituted fluorene, and the like.

As shown in FIG. 2F, the organic semiconductor materials 31a and 31b are flowed by evaporating the solvent contained in the applied organic semiconductor material 41 by performing a curing process such as ultraviolet curing and thermosetting. The organic semiconductor layer 42 is formed in a form embedded in the recess 22.

As described above, the organic semiconductor layer 42 is formed in the organic insulating layer 20 in the same manner as the source and drain electrodes 32a and 32b, and the organic semiconductor material 41 is coated and cured by an inkjet method. Since the ring is formed, the patterning process of the organic semiconductor layer 42 can be simplified. In addition, since the sidewalls of the recesses 22 serve as banks during curing, the organic semiconductor material 41 flows uniformly in the recesses 22, and thus, coffee stain effect occurs when the inkjet method is applied. ), The pattern precision of the organic semiconductor layer 42 can also be improved.

Thereafter, the gate insulating film 50 is formed of an organic insulating film such as benzocyclobutene (BCB), polyimide, polyvinylphenol, and parylene on the entire surface of the substrate 10, and the gate insulating film The gate electrode 60 is formed by forming and patterning a metal film including Ag, Cu, Au, Pt, Mo, MoW, Al, AlNd Cr, Al / Cr, etc. on the 50 as the gate electrode material (FIG. 1). Reference). In addition to this, various methods of forming the gate electrode may be applied, which also belongs to the scope of the present invention.

In this embodiment, the gate electrode 60 is formed over the organic semiconductor layer 42 with the gate insulating film 50 interposed therebetween, and the source and drain electrodes 32a and 32b are formed under the organic semiconductor layer 42. Although only the case of contacting with 42 is described, the formation position of the gate electrode 60 is not limited to this embodiment.

For example, as shown in FIG. 4, the gate electrode 210 is formed under the organic semiconductor layer 250 with the gate insulating layer 220 therebetween, and the source and drain electrodes 240a and 240b under the organic semiconductor layer 250. Even when the organic semiconductor layer 250 is in contact with the organic semiconductor layer 250, the recesses 231a, 231b, and 232 provided in the organic insulating layer 230 by using the source and drain electrodes 240a and 240b and the organic semiconductor layer 250 by an inkjet method. Each may be formed in a form embedded in the).

Next, a flat panel display including an organic thin film transistor according to an exemplary embodiment of the present invention described above with reference to FIG. 5 will be described. In the present embodiment, an organic EL display device will be described as an example of a flat panel display device.

In the organic EL display device, the first substrate 310 and the second substrate (not shown) are disposed to face each other at a predetermined interval, and the organic thin film transistor T2, which is a driving element, on the first substrate 310, and such driving is performed. The pixel portion T including the display portion L electrically connected to the device is formed. The organic EL display device may further include other components in addition to such a component, and it is natural that the organic EL display apparatus further including other components is within the scope of the present invention.

In this embodiment, the first and second substrates 310 and 410 are made of a transparent insulating substrate, and glass or plastic may be used as the material.

Looking at the configuration of the pixel portion P in more detail, the organic thin film transistor T2 is formed as a driving element on the first substrate 310. As in the above-described embodiment, the organic thin film transistor T2 is formed on the substrate 310 and is spaced apart from each other and arranged side by side and the first and second recesses 21a and 21b. The organic insulating film 20 and the organic insulating film 20 having a guide part including a third recessed part 22 disposed on the first and second recessed parts 21a and 21b while being connected to the first and second recessed parts 21a and 21b. Organic embedded in the first and second recesses 21a and 21b and embedded in the third recess 22 while in contact with the source and drain electrodes 32a and 32b and the source and drain electrodes 32a and 32b, respectively. In this embodiment, the semiconductor layer 22 includes a gate insulating film 50 formed on the entire surface of the semiconductor layer 22, a gate insulating film 50 formed on the entire surface of the substrate 310, and a gate electrode 60 formed on the organic insulating layer 22. The via hole 42 through which the organic semiconductor layer 42 and the gate insulating film 50 penetrate each other to expose the drain electrode 32b. a, 50a) are further provided. In addition, the material and the manufacturing method of each layer of the organic thin film transistor T2 are the same as in the above-described embodiment.

The via hole 320a penetrating the via holes 42a and 50a of the organic semiconductor layer 42 and the gate insulating film 50 to expose the drain electrode 32b while protecting the organic thin film transistor T2 is disposed on the entire surface of the substrate 310. The provided first insulating layer 320 is formed. On the first insulating layer 320 is formed on the first electrode 330, the first electrode 330 as an anode electrode electrically connected to the drain electrode 32b through the via holes 42a, 50a, 320a and have a specific color. The display unit L including the organic light emitting layer 350 that emits light of the light and the second electrode 360 as a cathode electrode formed on the organic light emitting layer 350 is formed, and the pixel is disposed on the first insulating layer 320. A second insulating layer 340 is formed to planarize the surface while separating the portions P.

The first and second electrodes 330 and 360 may be made of one or more materials of indium tin oxide (ITO), indium zinc oxide (IZO), Al, Mg-Ag, Ca, Ca / Ag, and Ba. In addition, the material may vary according to the light emission type of the display device. For example, when the flat panel display is a top emission type, the first electrode 330 may be made of Pt, Au, Pd, or Ni, and the second electrode 360 may be made of IZO.

The organic light emitting layer 350 is copper phthalocyanine (CuPc), N, N'-di (naphthalen-1-yl) -N, N'-dipetyl-benzidine (N, N'-Di (naphthalene-1-). It consists of low molecular weight organic materials such as yl) -N, N'-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3), or polymer organic materials. For example, when the organic emission layer 350 is formed of a low molecular organic material, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), and an electron transport layer (Electron Transport Layer); It consists of a multilayer structure including ETL). In addition, when the organic light emitting layer 350 is made of a polymer organic material, it is made of a hole transport layer (HTL) and an emitting layer (EML), wherein the HTL is made of a PEDOT material and the EML is poly-phenylene vinyl. It is made of poly (Phenylene-vinylene (PPV) -based or polyfluorene-based material.

In the above, the organic EL display device using the organic thin film transistor as the driving element and the display portion including the organic light emitting layer has been described. However, other flat panel display devices such as a liquid crystal display device that can use the organic thin film transistor as the driving element. Can be applied.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Of course it belongs to the range of.

According to the present invention described above, the source and drain electrodes of the organic thin film transistor and the organic semiconductor layer are formed by forming recesses in the organic insulating film and coating and curing the source and drain electrode materials and the organic semiconductor material by an inkjet method. .

Accordingly, the patterning process of the source and drain electrodes and the organic semiconductor layer can be simplified, and the pattern precision of the source and drain electrodes and the organic semiconductor layer can be improved, thereby improving the characteristics of the organic thin film transistor.

In addition, when the above-described organic thin film transistor is applied to a flat panel display such as an organic light emitting display, display quality of the screen may be improved.

Claims (31)

A gate insulating film; A gate electrode formed on one surface of the gate insulating film; And An organic insulating film formed on the other surface of the gate insulating film; Including, And the organic insulating film includes a guide portion formed on the organic insulating film so that the source and drain electrodes and the organic semiconductor layer are positioned on the organic insulating film. The method of claim 1, The guide part includes an organic thin film including first and second recesses disposed on the organic insulating layer and spaced apart from each other, and a third recess disposed on the first and second recesses while being connected to the first and second recesses. transistor. The method of claim 2, And the source and drain electrodes are formed in the first and second recesses, and the organic semiconductor layer is formed in the third recess. The method of claim 3, wherein And the source and drain electrodes and the organic semiconductor layer are buried in the first and second recesses and the third recesses, respectively. The method according to any one of claims 2 to 4, The organic thin film transistor of claim 1, wherein each of the first to third recesses has a square shape. The method of claim 1, An organic thin film transistor, wherein the organic insulating film is composed of a negative photoresist or a positive photoresist. The method of claim 1, The source and drain electrodes Polyethylene dioxythiophene (PEDOT), poly aniline (PANI), conductive polymers, Ag nanocomposites, Cu nanocomposites, Au nanocomposites, Pt nanocomposites, carbon nanocomposites, A material formed by pattern coating and then firing a material including a metal nanoparticle or carbon nanoparticle and an organic binder having a work function value greater than the value of the highest occupied molecular orbital (HOMO) of the organic semiconductor layer minus 0.5 eV. Wherein the metal nanoparticles include at least one of Ag nanoparticles, Cu nanoparticles, Au nanoparticles, and Pt nanoparticles. The method of claim 1, The organic semiconductor layer may include pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, and alpha-4-thiophene. 4-thiopene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, fer Perylene tetracarboxylic dianhydride and its derivatives, polyparaperylenevinylene and its derivatives, polyfluorene and its derivatives, polyparaphenylene and its derivatives, oligoacenes of naphthalene and derivatives thereof, Oligoacenes and their derivatives of alpha-5-thiopene, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic dian Hydrides and derivatives thereof, phthalo Phthalocyanine and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, substituted or unsubstituted thiophenes ( An organic thin film transistor comprising at least one organic semiconductor material selected from a conjugated polymer derivative including thiophene), and a conjugated polymer derivative including substituted fluorene. The method according to any one of claims 1 to 3, And the organic insulating film, the gate insulating film, and the gate electrode are sequentially stacked on the substrate. The method according to any one of claims 1 to 3, And the gate electrode, the gate insulating film, and the organic insulating film are sequentially stacked on the substrate. Forming a plurality of recesses in the organic insulating film formed on the substrate; Forming the source and drain electrodes such that the source and drain electrodes are respectively disposed independently in any of the recesses; And Forming an organic semiconductor layer in contact with the source and drain electrodes in the remaining recesses; A method of manufacturing an organic thin film transistor comprising the steps. The method of claim 11, The recesses, A first recess and a second recess disposed to be spaced apart from each other in the organic insulating layer, and a third recess disposed on the first and second recesses while being connected to the first and second recesses, The source and drain electrodes are formed in the form of the first and second recesses, respectively, and the organic semiconductor layer is formed in the form of the third recesses. Method for manufacturing an organic thin film transistor to be in contact with. The method according to claim 11 or 12, Forming recesses in the organic insulating film Forming an organic insulating film on the substrate; Exposing the organic insulating film using a halftone mask; And And developing the exposed organic insulating layer. The method of claim 13, The organic insulating layer is a method of manufacturing an organic thin film transistor consisting of a negative photoresist or a positive photoresist. The method according to claim 11 or 12, The source and drain electrodes Source and drain electrode materials are applied to the first and second recesses of the organic insulating film by an inkjet method, A method of manufacturing an organic thin film transistor formed by curing a substrate coated with the source and drain electrode materials. The method of claim 15, The source and drain electrode material is Polyethylene dioxythiophene (PEDOT), poly aniline (PANI), conductive polymers, Ag nanocomposites, Cu nanocomposites, Au nanocomposites, Pt nanocomposites, carbon nanocomposites, A material formed by pattern coating and then firing a material including a metal nanoparticle or carbon nanoparticle and an organic binder having a work function value greater than the value of the highest occupied molecular orbital (HOMO) of the organic semiconductor layer minus 0.5 eV. The method of claim 1, wherein the metal nanoparticles include at least one of Ag nanoparticles, Cu nanoparticles, Au nanoparticles, and Pt nanoparticles. The method according to claim 11 or 12, The organic semiconductor layer Applying an organic semiconductor material to the third concave portion of the organic insulating film by an inkjet method, A method of manufacturing an organic thin film transistor formed by curing a substrate coated with the organic semiconductor material. The method of claim 17, The organic semiconductor material may be pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4-thiophene, or alpha-4-thiophene. 4-thiopene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, fer Perylene tetracarboxylic dianhydride and its derivatives, polyparaperylenevinylene and its derivatives, polyfluorene and its derivatives, polyparaphenylene and its derivatives, oligoacenes of naphthalene and derivatives thereof, Oligoacenes and their derivatives of alpha-5-thiopene, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic dian Hydrides and derivatives thereof, phthalates Phthalocyanine and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, substituted or unsubstituted thiophenes At least one selected from conjugated polymer derivatives containing (thiophene) and conjugated polymer derivatives containing substituted fluorene. The method according to claim 11 or 12, Before forming the organic insulating film, And sequentially stacking a gate electrode and a gate insulating film on the substrate. The method according to claim 11 or 12, After the organic semiconductor layer is formed, And sequentially laminating a gate insulating film and a gate electrode on the substrate on which the organic semiconductor layer is formed. A pixel unit including a driving element formed on a substrate and a display unit electrically connected to the driving element; The driving element A gate insulating film; A gate electrode formed on one surface of the gate insulating film; And An organic insulating film formed on the other surface of the gate insulating film; Including, And an organic thin film transistor including an organic insulating film formed on the organic insulating film, the organic thin film transistor including a guide portion for placing a source and drain electrode and an organic semiconductor layer on the organic insulating film. The method of claim 21, The guide portion includes a first and second recesses spaced apart from each other in the organic insulating layer, and a flat display including a third recess disposed on the first and second recesses while being connected to the first and second recesses. Device. The method of claim 22, And the source and drain electrodes are formed in the first and second concave portions, and the organic semiconductor layer is formed in the third concave portion. The method of claim 23, wherein And the source and drain electrodes and the organic semiconductor layer are buried in the first and second recesses and the third recesses, respectively. The method according to any one of claims 21 to 24, And the first to third concave portions each have a rectangular cross-sectional shape. The method of claim 21, A flat panel display in which the organic insulating film is made of a negative photoresist or a positive photoresist. The method of claim 21, The source and drain electrodes Polyethylene dioxythiophene (PEDOT), poly aniline (PANI), conductive polymers, Ag nanocomposites, Cu nanocomposites, Au nanocomposites, Pt nanocomposites, carbon nanocomposites, A material formed by pattern coating and then firing a material including a metal nanoparticle or carbon nanoparticle and an organic binder having a work function value greater than the value of the highest occupied molecular orbital (HOMO) of the organic semiconductor layer minus 0.5 eV. Wherein the metal nanoparticles include at least one of Ag nanoparticles, Cu nanoparticles, Au nanoparticles, and Pt nanoparticles. The method of claim 21, The organic semiconductor layer is pentacene (tetracene), tetracene (tetracene), anthracene (anthracene), naphthalene (naphthalene), alpha-6-thiophene (α-6-thiopene), alpha-4-thiophene (α- 4-thiopene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, fer Perylene tetracarboxylic dianhydride and its derivatives, polyparaperylenevinylene and its derivatives, polyfluorene and its derivatives, polyparaphenylene and its derivatives, oligoacenes of naphthalene and their derivatives , Oligoacenes of alpha-5-thiophene (α-5-thiopene) and derivatives thereof, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid Dianhydride and its derivatives, phthalo Cyanine and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride and its derivatives, substituted or unsubstituted thiophenes ( A flat panel display device comprising an organic semiconductor material selected from at least one of a conjugated polymer derivative including thiophene) and a conjugated polymer derivative including substituted fluorene. The method according to any one of claims 21 to 23, And the organic insulating film, the gate insulating film, and the gate electrode are sequentially stacked on the substrate. The method according to any one of claims 21 to 23, And a gate electrode, a gate insulating film, and an organic insulating film are sequentially stacked on the substrate. The method of claim 21, And a display structure in which the display portion is formed by sequentially stacking a first electrode, an organic light emitting layer, and a second electrode.

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