KR100646569B1 - Light emitting device package and manufacturing method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device package and a method for manufacturing the same, wherein by forming a zener diode during the process and packaging the light emitting device, the package can be miniaturized and slimmed. There is no need to perform, it is possible to reduce the number of manufacturing process has the effect of reducing the manufacturing cost.

The light emitting device package may include an electrode line extending to the side of the light emitting device package, and the light emitting device package may be mounted on the printed circuit board using the extended electrode line to emit light of the light emitting device package to the side of the printed circuit board. It has an effect.

In addition, by manufacturing a plurality of light emitting device package in one conductive substrate, and separating into a single package, there is an effect that can increase the production yield and achieve process automation.

Description

Light emitting device package and manufacturing method thereof {Light emitting device package and method for fabricating the same}

1 is a perspective view of a side-type light emitting diode package according to the prior art

2 is a schematic cross-sectional view of FIG.

3A to 3D are cross-sectional views illustrating a manufacturing process of a light emitting device package according to the present invention.

4 is a cross-sectional view showing a state in which the filler is applied to the cavity of the light emitting device package according to the present invention.

5A to 5G are perspective views for explaining a manufacturing process of the light emitting device package according to the present invention in three dimensions.

6 is a conceptual view illustrating through-holes formed around each cavity in the method of manufacturing a light emitting device package according to the present invention.

7 is a conceptual diagram illustrating a state in which a zener diode is formed in a light emitting device package according to the present invention;

8 is a perspective view illustrating an electrode line formed in a light emitting device package according to the present invention;

9 is a schematic perspective view illustrating a state in which a light emitting device package according to the present invention is bonded to a printed circuit board;

10A to 10C are cross-sectional views of light emitting device packages according to the present invention.

<Description of the symbols for the main parts of the drawings>

100: semiconductor substrate

110a, 110b, 110c, 110d: Cavity

120a, 120a1,120a2,120a3,120b, 120c, 120d: Through Hole

130a1,130a2,130b1,130b2,130c1,130c2,130d1,130d2: diffusion layer

140: insulation layer

150a1,150a2,150b1,150b2,150c1,150c2,150d1,150d2,411,412,511,512: printed circuit board

170,570: light emitting device 300: light emitting device package

530: wire 540: conductive adhesive

541: insulating adhesive 551552: conductive bumps

The present invention relates to a light emitting device package and a method of manufacturing the same, and more particularly, by forming a zener diode during the process to package the light emitting device, the package can be miniaturized and slimmed, and the zener diode manufacturing process and the light emitting device The present invention relates to a light emitting device package and a method of manufacturing the same, which do not need to perform a wire bonding process or the like, and thus can reduce the number of manufacturing processes.

It is the next generation light source of the optical semiconductor era led by the compound semiconductor of the 21st century, which is very energy-saving effect compared to the existing light source, and the luminance problem, which is semi permanently used, has been greatly improved. As a result, it is widely used in industries such as backlight units, automobiles, billboards, traffic lights, and lighting.

These light emitting diode packages are becoming smaller and smaller according to the trend of miniaturization and slimming of information and communication devices. In order to mount the light emitting diodes directly onto a printed circuit board (PCB), a surface mount device (SMD) type is used. It is being made.

The SMD type LED package is manufactured in a top view method and a side view method according to its purpose of use.

1 is a perspective view of a side type light emitting diode package according to the prior art, in which a light emitting diode 11 is mounted on a first lead frame 10, and a zener diode 21 is mounted on a second lead frame 20. The light emitting diodes 11 and the zener diodes 21 are wire bonded using the electrode terminals 12 and 22 of the first and second lead frames 10 and 20. Lead frames 10 and 20 are wrapped by plastic injection molding 30.

Referring to FIG. 2 in more detail with reference to FIG. 2, a reflective film (not shown) is formed inside the plastic injection molding 30 to reflect light emitted from the light emitting diode 11 to externally emit light. By improving the output and connecting the light emitting diode 11 and the zener diode 21 in parallel by a conductive wire 25 such as Au, the current applied in the reverse direction from the light emitting diode 11 by static electricity is applied to the zener diode ( By-passing by 21 may damage the light emitting diode 11.

The side type light emitting diode package is used as a backlight unit of a mobile communication device.

However, the above-described side type light emitting diode package structure requires a zener diode device as well as a light emitting diode device to perform a costly bonding process, and a wire bonding process is performed for electrical connection between the two devices. There is a problem in that the number of water and work processes are increased, manufacturing cost increases in time and economics.

In order to solve the problems as described above, by forming a zener diode during the process to package the light emitting device, the package can be miniaturized and slimmed, and the Zener diode manufacturing process and the wire bonding process with the light emitting device are performed. The object of the present invention is to provide a light emitting device package and a method of manufacturing the same, which can reduce the number of manufacturing processes and thus reduce manufacturing costs.

It is another object of the present invention to provide a light emitting device package and a method of manufacturing the same, which are capable of increasing production yield and achieving process automation by manufacturing a plurality of light emitting device packages on a single conductive substrate and separating them into a single package. There is.

It is still another object of the present invention to provide an electrode line extending on a side of a light emitting device package, and mounting the light emitting device package on a printed circuit board by using the extended electrode line. The present invention provides a light emitting device package capable of emitting light and a method of manufacturing the same.

A preferred aspect for achieving the above objects of the present invention,

A semiconductor substrate having a first polarity;

A diffusion layer formed on the semiconductor substrate and having a second polarity;

An insulating layer formed over the semiconductor substrate exposing the diffusion layer and including side and bottom surfaces of the cavity;

Electrode lines formed on the semiconductor substrate surrounding the diffusion layer and spaced apart from each other at the bottom surface of the cavity;

A light emitting device package is mounted in the cavity and includes a light emitting device electrically connected to the electrode lines.

Another preferred aspect for achieving the above object of the present invention,

Preparing a semiconductor substrate having a first polarity;

Forming a plurality of cavities spaced apart from each other on the semiconductor substrate having the first polarity;

Forming a through hole around each of the plurality of cavities;

Forming a diffusion layer having a second polarity on the semiconductor substrate between the plurality of cavities and the through hole;

Exposing an upper portion of each of the diffusion layers and forming an insulating layer on the semiconductor substrate;

Forming electrode lines spaced apart from each other in each of the cavities and surrounding the diffusion layer;

Mounting light emitting elements in each of the plurality of cavities, and electrically connecting the light emitting elements and the electrode lines;

A method of manufacturing a light emitting device package including cutting a semiconductor substrate between through holes in the periphery of each of the plurality of cavities and separating the semiconductor substrate into a single package having one cavity is provided.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

3A to 3D are cross-sectional views illustrating a manufacturing process of a light emitting device package according to the present invention. As illustrated in FIG. 3A, a semiconductor substrate 100 having a first polarity is prepared.

The semiconductor substrate 100 is preferably a silicon substrate.

Thereafter, a plurality of cavities 110a and 110b spaced apart from each other are formed on the semiconductor substrate 100 having the first polarity (FIG. 3B).

Here, the cavities (110a, 110b) is preferably formed to a depth of 10 ~ 1000㎛ for mounting the light emitting device.

Next, through holes 120a and 120b are formed around each of the plurality of cavities 110a and 110b (FIG. 3C).

Subsequently, diffusion layers 130a1, 130a2, 130b1, and 130b2 having a second polarity are formed on the semiconductor substrate 100 between the plurality of cavities 110a and 110b and the through holes 120a and 120b. 3d)

The diffusion layers 130a1, 130a2, 130b1, and 130b2 having the second polarity form an impurity diffusion mask material such as a silicon oxide film on the entire surface of the semiconductor substrate, pattern the selective region, and then pattern the impurity of the second polarity After implanting into the region, a diffusion process such as heat treatment may be performed.

In this case, it is preferable that the first polarity is N type and the second polarity is P type.

Subsequently, a portion of an upper portion of each of the diffusion layers 130a1, 130a2, 130b1, and 130b2 is exposed, and an insulating layer 140 is formed on the semiconductor substrate 100 (FIG. 3E).

The insulating layer 140 is formed for electrical insulation between the semiconductor substrate and the electrode lines formed thereafter.

In this case, a resistor may be formed on the insulating layer 140 as a current limiting device of the light emitting device.

Subsequently, electrode lines 150a1, 150a2, 150b1, and 150b2 spaced apart from each other in the plurality of cavities 110a and 110b and surrounding the diffusion layers 130a1, 130a2, 130b1, and 130b2 are formed. 3f)

Here, the electrode line is also extended to the side surface of the through-holes 120a and 120b closest to the cavity to emit light on the side of the light emitting device package.

The electrode lines 150a1, 150a2, 150b1, and 150b2 are formed by depositing a metal thin film by a sputtering method or an electron beam evaporation method using a hard mask that can be patterned only in a desired area. It is.

Next, the light emitting devices 160 are mounted in each of the plurality of cavities 110a and 110b, and the light emitting devices 160 and the electrode lines 150a1, 150a2, 150b1 and 150b2 are electrically connected to each other. (Fig. 3g)

Finally, the semiconductor substrate 100 between the through holes 120a and 120b around each of the plurality of cavities 110a and 110b is cut and separated into a single package having one cavity. 3h)

By performing the process of FIG. 3H, a side light emitting device package according to the present invention may be implemented, that is, a semiconductor substrate having a cavity formed thereon and having a first polarity; A diffusion layer formed on the semiconductor substrate and having a second polarity; An insulating layer formed over the semiconductor substrate exposing the diffusion layer and including side and bottom surfaces of the cavity; Electrode lines formed on the semiconductor substrate surrounding the diffusion layer and spaced apart from each other at the bottom surface of the cavity; The light emitting device is mounted in the cavity and electrically connected to the electrode lines.

Accordingly, the light emitting device package according to the present invention can be manufactured by a bulk micromachining process on a semiconductor substrate, thereby making it possible to reduce the package size and reduce the thickness, thereby enabling miniaturization and slimming.

In addition, by forming a zener diode in a diffusion process on a semiconductor substrate, there is no need to perform a process for manufacturing an additional zener diode, there is an advantage that a package process for mounting a zener diode does not necessarily need to be performed.

In addition, since multiple packages can be manufactured on a single semiconductor substrate, there is an advantage of increasing production yield and achieving process automation.

4 is a cross-sectional view illustrating a state in which a filler is applied to a cavity of a light emitting device package according to the present invention, and emits light inside each of the plurality of cavities 110a and 110b between the above-described processes of FIGS. 3G and 3H. If a filler coating step for wrapping the device is further provided, the light emitting device may be protected from external pressure and contamination.

Here, the filler is preferably epoxy or silicone gel.

In addition, when the filler is composed of the resin 280 in which the phosphor is dispersed, the wavelength of light emitted from the light emitting device may be switched.

That is, as shown in FIG. 4, the light emitting device package includes a semiconductor substrate having a cavity formed thereon and having a first polarity; A diffusion layer formed on the semiconductor substrate and having a second polarity; An insulating layer formed over the semiconductor substrate exposing the diffusion layer and including side and bottom surfaces of the cavity; Electrode lines formed on the semiconductor substrate surrounding the diffusion layer and spaced apart from each other at the bottom surface of the cavity; A light emitting element mounted inside the cavity and electrically connected to the electrode lines; The light emitting device surrounds the light emitting device and includes a filler applied to the inside of the cavity.

5A to 5G are perspective views for explaining a manufacturing process of the light emitting device package according to the present invention in three dimensions, and FIGS. 5A to 5G are shown by rotating the substrate in order to explain the state of the interior of the cavity according to each manufacturing process in detail. will be.

First, as shown in FIG. 5A, a plurality of cavities 110a, 110b, 110c, and 110d spaced apart from each other are formed on the semiconductor substrate 100 having the first polarity.

Next, through holes 120a, 120b, 120c, and 120d are formed around the plurality of cavities 110a, 110b, 110c, and 110d, respectively (FIG. 5B).

Here, the through holes 120a, 120b, 120c, and 120d are first through holes 120a1 (FIG. 6) formed horizontally in the plurality of cavities 110a, 110b, 110c, and 110d, respectively, as shown in FIG. 6. At 6, through holes in parallel arrow directions); The second through hole 12a2 is formed to be perpendicular to the first through hole 120a1 and connected to both ends of the first through hole 120a1.

The first through third through-holes having this shape can be more easily cut into each single package in a single package separation process.

In FIG. 5C, the diffusion layers 130a1 and 130a2 having the second polarity are formed on the semiconductor substrate 100 between the plurality of cavities 110a, 110b, 110c and 110d and the through holes 120a, 120b, 120c and 120d. , 130b1, 130b2, 130c1, 130c2, 130d1, and 130d2.

Subsequently, an upper portion of each of the diffusion layers 130a1, 130a2, 130b1, 130b2, 130c1, 130c2, 130d1, and 130d2 is exposed, and an insulating layer 140 is formed on the entire surface of the semiconductor substrate 100 (FIG. 5D).

The insulating layer 140 is also formed on the side and bottom surfaces of the cavities 110a, 110b, 110c and 110d.

Subsequently, the electrode lines 150a1, which are spaced apart from each other in the plurality of cavities 110a, 110b, 110c, and 110d and surround the diffusion layers 130a1, 130a2, 130b1, 130b2, 130c1, 130c2, 130d1, and 130d2, respectively. 150a2, 150b1, 150b2, 150c1, 150c2, 150d1, 150d2) are formed (FIG. 5E).

The subsequent process can be explained with Figs. 3G and 3H.

FIG. 7 is a conceptual view illustrating a state in which a zener diode is formed in a light emitting device package according to the present invention. The cavity 110 is formed on the semiconductor substrate 100 and the semiconductor substrates on both sides of the cavity 110 ( Diffusion layers 130a1 and 130a2 are formed on the upper portions of the top 100.

That is, the diffusion layer is a pair of diffusion layers formed on the semiconductor substrate 100 and spaced apart from each other.

In this case, when the polarity of the semiconductor substrate 100 is N type and the diffusion layers 130a1 and 130a2 are P type, an NPN zener diode is formed.

In addition, since the electrode lines 150a1 and 150b connected to the diffusion layers 130a1 and 130a2 are electrically connected to the light emitting device 170, and the light emitting device 170 is connected to the zener diode in parallel, the light emitting device 170 In case of generating static electricity or surge voltage, the light emitting device can be protected by a zener diode.

As a result, the present invention can form a Zener diode during the light emitting device package manufacturing process, it is possible to reduce the size and the number of processes of the package it is possible to reduce the manufacturing cost.

FIG. 8 is a perspective view illustrating an electrode line formed in a light emitting device package according to the present invention. As shown in FIG. 5E, electrode lines 150a1 and 150a2 formed on an upper surface of the semiconductor substrate 100 may be formed through semiconductors. It is preferable to extend also to the side surface of the substrate 100.

At this time, the electrode lines 150a1 and 150a2 formed on the side surfaces of the semiconductor substrate 100 are bonded to the printed circuit board as described later to emit light emitted from the package to the side surfaces of the printed circuit board. .

9 is a schematic perspective view illustrating a state in which a light emitting device package according to the present invention is bonded to a printed circuit board. The light emitting device package 300 is connected to a pair of electrode lines 411 and 412 formed on the printed circuit board 400. Electrode lines formed on the side of the bonding is bonded, the light is emitted to the side of the printed circuit board 400.

10A to 10C are cross-sectional views of a light emitting device package according to the present invention. First, in FIG. 10A, the light emitting device 570 is a flip chip (conductive bumps 551 and 552 to electrode lines 511 and 512 in a cavity of a semiconductor substrate). Flip chip) is bonded.

In addition, in the structure of FIG. 10B, the light emitting device 570 is electrically connected and bonded to one electrode line 511 in the cavity of the semiconductor substrate with the conductive adhesive 540, and the other electrode line 512. The light emitting element 570 is bonded to the wire 530.

That is, the light emitting device 570 is provided with an electrode terminal on the upper and lower, respectively, the lower electrode terminal is electrically connected to one electrode line 511 at the same time as the mounting, the other electrode terminal 512 ) Is wire bonded.

In addition, in the structure of FIG. 10C, the light emitting device 570 is adhered to the insulating layer 520 inside the cavity of the semiconductor substrate by the insulating adhesive 541, and the light emitting device 570 is formed by the electrode line (the inside of the cavity) ( Wires 531 and 532 are bonded to 511 and 512 to be electrically connected to each other.

As described above, the present invention forms a zener diode during the process to package the light emitting device, thereby miniaturizing and slimming the package, and does not have to perform the zener diode manufacturing process and the wire bonding process with the light emitting device. Since the number of manufacturing processes can be reduced, manufacturing cost can be reduced.

Therefore, a package suitable for the required characteristics of a small electronic device such as a portable information communication device can be implemented.

The light emitting device package may include an electrode line extending to the side of the light emitting device package, and the light emitting device package may be mounted on the printed circuit board using the extended electrode line to emit light of the light emitting device package to the side of the printed circuit board. It has an effect.

In addition, by manufacturing a plurality of light emitting device packages in one semiconductor substrate and separating into a single package, there is an effect that can increase the production yield and achieve process automation.

Although the invention has been described in detail only with respect to specific examples, it will be apparent to those skilled in the art that various modifications and variations are possible within the spirit of the invention, and such modifications and variations belong to the appended claims.

Claims (14)

A semiconductor substrate having a first polarity; A diffusion layer formed on the semiconductor substrate and having a second polarity; An insulating layer formed over the semiconductor substrate exposing the diffusion layer and including side and bottom surfaces of the cavity; Electrode lines formed on the semiconductor substrate surrounding the diffusion layer and spaced apart from each other at the bottom surface of the cavity; And a light emitting device mounted in the cavity and electrically connected to the electrode lines. The method of claim 1, The electrode lines, The light emitting device package further extends on the side of the semiconductor substrate. The method of claim 1, The diffusion layer, The light emitting device package, characterized in that a pair of diffusion layers formed spaced apart from each other on the semiconductor substrate. The method according to any one of claims 1 to 3, The first polarity is N type, The second polarity is a p-type light emitting device package, characterized in that. The method according to any one of claims 1 to 3, The semiconductor substrate, A light emitting device package, characterized in that the silicon substrate. The method according to any one of claims 1 to 3, A light emitting device package surrounding the light emitting device and further comprising a filler applied to the inside of the cavity. The method of claim 6, The filler, Light emitting device package, characterized in that the epoxy or silicone gel. The method of claim 6, The filler. A light emitting device package, wherein the phosphor is dispersed in a resin. Preparing a semiconductor substrate having a first polarity; Forming a plurality of cavities spaced apart from each other on the semiconductor substrate having the first polarity; Forming a through hole around each of the plurality of cavities; Forming a diffusion layer having a second polarity on the semiconductor substrate between the plurality of cavities and the through hole; Exposing an upper portion of each of the diffusion layers and forming an insulating layer on the semiconductor substrate; Forming electrode lines spaced apart from each other in each of the cavities and surrounding the diffusion layer; Mounting light emitting elements in each of the plurality of cavities, and electrically connecting the light emitting elements and the electrode lines; Cutting the semiconductor substrate between the through-holes in the periphery of each of the plurality of cavities, and separating the semiconductor substrate into a single package having one cavity. The method of claim 9, Between the electrically connecting the electrode lines and the separating into a single package, The method of manufacturing a light emitting device package surrounding the light emitting device inside each of the cavities, and further comprising applying a filler. The method of claim 10, The filler, The manufacturing method of the light emitting element package characterized by the resin in which fluorescent substance is disperse | distributed. The method of claim 10, In the forming of the electrode lines, Wherein the electrode line is a manufacturing method of the light emitting device package, characterized in that further extending the electrode line on the side of the through-hole closest to the respective cavities. The method according to any one of claims 10 to 12, In the forming of the diffusion layer, The diffusion layer, And a pair of diffusion layers spaced apart from each other on the semiconductor substrate. The method according to any one of claims 10 to 12, The first polarity is N type, The second polarity is a P type manufacturing method of the light emitting device package, characterized in that.

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