KR100611075B1 - How to make metal mask for ODL ID full color and metal mask produced by this method - Google Patents

Abstract

The present invention relates to a method of manufacturing an organic light emitting device (OLED) full color metal mask (Metal Mask) and to a metal mask produced by the method, and more particularly to manufacturing a metal mask for OLED full color The present invention relates to a method for fabricating a full-color metal mask of stripe type or grille type used for depositing an organic light emitting layer, and processing the developer so that the upper and lower shapes of the slit after the etching is completed are semi-elliptical. The method of manufacturing a metal mask for OLED full color and the method for forming an organic light emitting layer having a regular pattern by minimizing the interference of other organic light emitting layers that may occur during deposition of the organic light emitting layer by making the upper and lower shapes uniformly. It relates to a manufactured metal mask.

Metal mask, slit, partition, developer, light emitting layer, photoresist coating part, etching part

Description

METHODS FOR MAKING METAL MASK FOR OEL ID FULL COLOR AND METAL MASK PRODUCED BY THE METHOD {THE MAKING METHOD A METAL-MASK FOR OLED FULL-COLOR, AND THE METAL-MASK MAKE BY THIS METHOD}

1 is a schematic diagram showing a front face of a full color metal mask arranged in a stripe pattern;

2 is a schematic diagram showing a partial region of a cell arranged in a stripe form;

3 is a cross-sectional view showing a cross section of an OLED fabricated using a metal mask.

4 is a schematic diagram showing an OLED after an organic light emitting layer is deposited using a metal mask.

5 is a schematic diagram showing slits of a partition and a metal mask;

6 is a schematic diagram showing the slit shape of an ideal metal mask after completion of etching.

7 is a schematic view showing one slit of a general developer.

FIG. 8 is a schematic diagram showing a slit after the developer of FIG. 7 is etched away. FIG.

FIG. 9 is a schematic diagram showing a barrier rib and an organic light emitting layer after the organic light emitting layer is stacked when an OLED is manufactured using the slit-shaped metal mask of FIG. 8. FIG.

Figure 10 is a schematic diagram showing a slit of the developer, in accordance with a preferred embodiment of the present invention.

11 is a schematic diagram illustrating slits after completion of etching, in accordance with a preferred embodiment of the present invention.

12 is a schematic diagram showing a partition and an organic light emitting layer after the organic light emitting layer is laminated in manufacturing an OLED using a metal mask according to a preferred embodiment of the present invention.

<Explanation of symbols for main parts of drawing>

10: Metal Mask 12: Cell

14: Slit 16: Glass Substrate

18: ITO electrode 20: partition wall

22: photoresist coating portion 24: etching portion

The present invention relates to a method for manufacturing a metal mask for OLED full color and a metal mask produced by the method, and more particularly, by processing the developer so that the upper and lower shapes of the slit after the etching is completed is a semi-ellipse, Method of manufacturing a metal mask for OLED full color and to form a top-bottom shape of the uniform shape, to minimize the interference of other organic light emitting layer that can occur during the deposition of the organic light emitting layer, to form an organic light emitting layer of a regular pattern It relates to a metal mask produced by.

Generally, organic materials for red, green, and blue colors are fabricated by vacuum deposition in an evaporator. In this case, metal masks are used to precisely coat R, G, and B organic materials at desired pixel positions. .

1 is a schematic view showing the entire surface of a metal mask for general color. Referring to FIG. 1, dozens or more cells 1 inch or more are disposed in one metal mask 10.

2 is a schematic diagram showing a partial region of a cell 12 which is generally constructed. According to FIG. 2, dozens or more of slits 14 having a length of 10 mm or more and arranged in a stripe shape are distributed in the cell.

FIG. 3 is a cross-sectional view showing a cross section of an OLED fabricated using a metal mask, and FIG. 4 is a schematic diagram showing an OLED after an organic light emitting layer is deposited using a metal mask. 5 is a schematic diagram showing a part of a slit of a partition and a metal mask. 3 to 5, an anode is formed on the transparent glass substrate 16 with the transparent ITO electrode 18 as well. Next, the partition wall 20 may be formed to serve as an insulator, and although not illustrated, a hole transport layer may be stacked, and then red, green, and blue organic materials 8R, 8G, and 8B may be formed using the metal mask 10 for color. Laminated. When the R, G, and B organic materials are stacked, the slits 14 of the metal mask 10 are designed so that a part of the partition wall 20 is visible.

In general, the metal mask uses a nickel-alloy material having a thickness of 0.1t or less. The manufacturing method is carried out according to the Photo Etching method. The Photo Etching method washes the surface of a metal material and then coats and dries the photoresist, and a photomask and an exposure machine are used for the photoresist. Exposure process to pattern the shape, development process to wash the unexposed area, dry film treatment and dry it, and after the development is completed, the photoresist is washed down and the metal material is exposed to be corroded by the corrosion solution (iron chloride). After finally forming the desired shape, it consists of four steps of the etching process to remove the remaining photoresist and finally dry.

6 is a schematic diagram showing the shape of a slit of an ideal metal mask after completion of etching. According to FIG. 6, the slit of the ideal metal mask has a rectangular width of the middle width a, the upper width a ', and the lower width a "of a = a' = a", and the upper and lower middle slits have the same width. Has a shape.

However, it is impossible to shape such a rectangular shape by the conventional photo etching method. This is because the exposed metal material of the developer is corroded by the rocking spray (Spray) that injects the corrosion solution when the finished product is put into the etching. This is because a lot of progress is relatively wide and round.

7 is a cross-sectional view showing one slit of a general developer. According to FIG. 7, the developer is divided into a photoresist coating part 22 on which the photoresist is coated and an etching part 24 on which an unexposed part is developed to expose a metal material to be etched.

8 is a schematic view showing a slit after the developer of FIG. 7 has undergone an etching process. According to FIG. 8, generally, the slit of the developed product has the same width in the upper and lower portions, and when the developed product undergoes an etching process, the difference in length between the uppermost width e and the middle width d becomes ed> 20 μm. . The ratio of the total length (f) to the lower longitudinal length (g) depends on the length of the slit, but is usually on the order of f: g = 35: 1.

FIG. 9 is a schematic view illustrating an OLED manufactured by using the metal mask having the slit shape of FIG. 8. According to FIG. 9, the round shape of the upper and lower slits results in the deposition of the organic material at other organic deposition positions adjacent to each other. Therefore, the light emitting performance is lowered in the upper and lower slits, the light emitting efficiency is lowered.

Accordingly, there is a need for a method of manufacturing a metal mask for OLED full color, which prevents organic materials from being deposited at other organic material positions adjacent to upper and lower portions of the slit, thereby increasing luminous efficiency.

The present invention has been made to solve the above problems, and an object of the present invention is to process the developer so that the top and bottom shape of the slit after the completion of the etching becomes a semi-elliptic, so that the top and bottom shape of the slit is formed uniformly, organic To minimize the interference of other organic light emitting layer that may occur during the deposition of the light emitting layer, to provide a method of manufacturing a slit of a metal mask that can form an organic light emitting layer of a regular pattern and a metal mask produced by the method.

In order to achieve the above object, an OLED full color metal mask manufacturing method according to a preferred embodiment of the present invention, a full color metal mask manufacturing method used in the organic light emitting layer deposition in the OLED manufacturing process, during the etching process The etching injection direction is set to the upper part of the slit of the metal mask, and the shape of the upper and lower parts of the slit of the developed product after the completion of the development has a trapezoidal shape, so that the upper and lower parts of the metal mask slit of the finished product after etching are uniform in a semi-elliptic shape. An organic light emitting layer is formed.

According to one preferred embodiment of the present invention, in the developer slit after the completion of the developing process, the total length of the slit (x), the upper trapezoidal vertical length (y), the lower trapezoidal vertical length (z), the middle width (v), the top width x and y are 10 mm or more, x: y = 10-20: 1, vs = 10-30 μm, x: z = 20-70: 1, vt = 5-20 It is preferable to satisfy the conditions of µm.

According to a preferred embodiment of the present invention, the upper and lower shapes of the metal mask slit of the finished product after the etching is completed are not only semi-elliptical, but also may be manufactured in all forms having an obtuse angle at the time when the upper and lower shapes are formed. It is desirable to be able to.

According to one preferred embodiment of the invention, in the final finished slit after completion of etching, the total length of the slit (x '), the radius of the upper semi-ellipse (y'), the radius of the lower semi-ellipse (z '), the middle width (v) '), Upper width s', lower width t ', x' is 10 mm or more, s '<v', t '<v', x ': y' = 20-100: 1, x It is preferable to satisfy the condition of ': z' = 20 to 100: 1.

Hereinafter, with reference to the accompanying drawings will be described in more detail the manufacturing method of the metal mask for OLED full color of the present invention.

10 is a cross-sectional view showing a slit cross section of a developed product according to an embodiment of the present invention. According to FIG. 10, the developer is divided into a photoresist coating part 22 coated with a photoresist and an etching part 24, which is a metal material part to be etched by developing an unexposed part.

When determining the upper and lower parts of the slit, the etching injection direction is set as the upper part of the slit. According to a preferred embodiment of the present invention, the upper and lower portions preferably have a constant trapezoidal shape, and the total length (x) of the slit is preferably 10 mm or more. In addition, the total length of the slit (x), the upper trapezoidal vertical length (y), the lower trapezoidal vertical length (z), the middle width (v), the uppermost width (s), and the lowermost width (t) are x: y = 10. It should be manufactured to satisfy the conditions of ˜20: 1, vs = 10-30 μm, x: z = 20-70: 1 and vt = 5-20 μm.

Generally used metal material is Invar (36% Ni-Alloy) material, the thickness is 0.05mm. When the developer is added to the etching, a corrosion spray is used to spray the corrosion solution. The photoresist is washed away and the exposed metal material is corroded by a double-sided etching method.

11 is a schematic diagram showing the shape of a slit after completion of etching according to a preferred embodiment of the present invention. According to FIG. 11, in the final finished slit after completion of etching, the total length of the slit (x '), the radius of the upper half ellipse (y'), the radius of the lower half ellipse (z '), the middle width (v'), the upper width (s'), lower width t ', x' is 10 mm or more, s' <v ', t' <v ', x': y '= 20-100: 1, x': z '= The condition of 20-100: 1 is satisfied. Although not shown, the upper and lower shapes of the metal mask slit of the finished product after the etching is completed may be manufactured in any shape having an obtuse angle at the time of forming the upper and lower shapes as well as the semi-elliptic shape.

12 is a schematic diagram showing the appearance of a barrier rib and an organic light emitting layer when an OLED is manufactured using a metal mask according to an exemplary embodiment of the present invention. According to FIG. 12, since the upper and lower portions of the slit are manufactured in the shape of a semi-ellipse, the phenomenon that the width of the slit does not overlap with other organic light emitting layers adjacent to each other beyond the partition wall occurs, thereby emitting light by depositing the organic light emitting layer at a desired position. The efficiency can be maximized.

Example

The inventors of the present invention use a Invar (36% Ni-Alloy) material to fabricate a full-color metal mask used for depositing an organic light emitting layer in OLED fabrication. Proceed according to.

In the developing step, the unexposed part is washed, the dura mater is treated, and the drying is performed. The metal mask that has undergone the developing step is called a developer. In the slit of the developer, the shape of the upper and lower portions of the metal material portion to be etched is to take the shape of a constant trapezoid. In general, the total length (x) of the slit is preferably to be 10mm or more, and in this embodiment, the total length of the slit is 10mm.

In addition, when etching, the etching injection direction is set to the upper side of the slit, the total length of the slit (x), the upper trapezoid vertical length (y), the lower trapezoid vertical length (z), the middle width (v) of the developer. , Uppermost width s and lowermost width t were fabricated such that x: y = 15: 1, vs = 20 μm, x: z = 30: 1, and vt = 10 μm.

When the developer is injected into the etching, a corrosion spray is used to spray the corrosion solution. The photoresist is washed off and the exposed metal material is corroded by a double-sided etching method.

The final finished slit after the etching is completed, the radius of the upper semi-ellipse (y '), the radius of the lower semi-ellipse (z'), the middle width (v '), the upper width (s'), the lower width (t'), x '= 10.030 mm, y' = 130 μm, z '= 150 μm, v' = 60 μm, s '= 55 μm, t' = 52 μm, where s '<v', t '<v', x ': y' = 77: 1, x ': z' = 67: 1 and it is designed to satisfy the condition.

Therefore, the width of the upper and lower portions of the slit is smaller than the middle width, so that the adjacent light emitting layers do not overlap each other, thereby maximizing the light emitting effect.

The foregoing has outlined rather broadly the features and technical advantages of the present invention in order to better understand the claims of the invention which will be described later. Additional features and advantages constituting the claims of the present invention will be described below. It should be appreciated by those skilled in the art that the conception and specific embodiments of the invention disclosed may be readily used as a basis for designing or modifying other structures for carrying out similar purposes to the invention.

In addition, the inventive concepts and embodiments disclosed herein may be used by those skilled in the art as a basis for modifying or designing other structures for carrying out the same purposes of the present invention. In addition, such modifications or altered equivalent structures by those skilled in the art may be variously changed, substituted and changed without departing from the spirit or scope of the invention described in the claims.

As described above, the present invention processes the developer so that the upper and lower shapes of the slit after etching become semi-elliptical, so that the upper and lower shapes of the slit are formed uniformly, thereby stacking the organic material at the exact lamination position of the organic light emitting layer. In addition, there is an effect of minimizing interference of other organic light emitting layers that may occur when the organic light emitting layer is deposited and forming an organic light emitting layer having a regular pattern.

Claims (5)

Front process of coating and drying the photoresist after cleaning the surface of metal (Ni-Alloy), An exposure step of patterning a desired shape in the photosensitive liquid by a photo mask and an exposure machine; A developing step of washing off unexposed portions, subjecting to dura maturing, and drying; and After development, the photoresist is washed down to corrode the exposed metal material with a corrosion solution to finally form the desired shape, and then the remaining photoresist is peeled off and finally dried to produce an OLED full color metal mask. In the method, A method of manufacturing a full-color metal mask used in the deposition of an organic light emitting layer in the fabrication of an OLED, in which the etching input direction is set to the upper portion of the slit of the metal mask during the etching process, and the shape of the upper and lower portions of the slit of the developer after the completion of development has a trapezoidal shape. The upper and lower shapes of the metal mask slit of the finished product after etching are made uniform in a semi-elliptic shape so that a uniform organic light emitting layer is formed. The method of claim 1, In the developer slit after completion of the developing process, the total length of the slit (x), the upper trapezoidal longitudinal length (y), the lower trapezoidal longitudinal length (z), the middle width (v), the top width (s), and the bottom width (t) X satisfies the conditions of 10 mm or more, x: y = 10 to 20: 1, vs = 10 to 30 μm, x: z = 20 to 70: 1 and vt = 5 to 20 μm Manufacturing method of metal mask for OLED full color. The method of claim 1, After etching is completed, the upper and lower shapes of the metal mask slit of the finished product can be manufactured in all shapes having an obtuse angle at the time of forming the upper and lower shapes as well as the semi-elliptic shape. How to make a metal mask. The method of claim 1, In the final finished slit after completion of etching, the total length of the slit (x '), the radius of the upper semi-ellipse (y'), the radius of the lower semi-ellipse (z '), the medium width (v'), the upper width (s'), For the lower width t ', x' is 10 mm or more, s '<v', t '<v', x ': y' = 20-100: 1, x ': z' = 20-100: 1 Method of producing a metal mask for OLED full color, characterized in that to satisfy the conditions. The metal mask for OLED full color produced by the manufacturing method of any one of Claims 1-4.

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