KR100572801B1 - 기계적 특성이 우수한 절연막 코팅 조성물 - Google Patents
기계적 특성이 우수한 절연막 코팅 조성물 Download PDFInfo
- Publication number
- KR100572801B1 KR100572801B1 KR1020030095793A KR20030095793A KR100572801B1 KR 100572801 B1 KR100572801 B1 KR 100572801B1 KR 1020030095793 A KR1020030095793 A KR 1020030095793A KR 20030095793 A KR20030095793 A KR 20030095793A KR 100572801 B1 KR100572801 B1 KR 100572801B1
- Authority
- KR
- South Korea
- Prior art keywords
- coating composition
- organic solvent
- ketone
- insulating film
- polymer
- Prior art date
Links
- 239000008199 coating composition Substances 0.000 title claims abstract description 45
- 238000009413 insulation Methods 0.000 title claims abstract description 9
- 229920000642 polymer Polymers 0.000 claims abstract description 42
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 125000005375 organosiloxane group Chemical group 0.000 claims abstract description 27
- 239000000203 mixture Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 239000007787 solid Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 19
- 239000003960 organic solvent Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 14
- 230000002209 hydrophobic effect Effects 0.000 claims description 14
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical group CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000178 monomer Substances 0.000 claims description 7
- PFCHFHIRKBAQGU-UHFFFAOYSA-N 3-hexanone Chemical compound CCCC(=O)CC PFCHFHIRKBAQGU-UHFFFAOYSA-N 0.000 claims description 6
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 claims description 6
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 6
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 claims description 6
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005292 vacuum distillation Methods 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- XYYMFUCZDNNGFS-UHFFFAOYSA-N 2-methylheptan-3-one Chemical class CCCCC(=O)C(C)C XYYMFUCZDNNGFS-UHFFFAOYSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229920000858 Cyclodextrin Polymers 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 229920001610 polycaprolactone Polymers 0.000 claims description 2
- 239000011164 primary particle Substances 0.000 claims description 2
- 239000011163 secondary particle Substances 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 229940097362 cyclodextrins Drugs 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 37
- 239000010409 thin film Substances 0.000 abstract description 24
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 5
- 239000007888 film coating Substances 0.000 abstract description 4
- 238000009501 film coating Methods 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- FFWSICBKRCICMR-UHFFFAOYSA-N 5-methyl-2-hexanone Chemical compound CC(C)CCC(C)=O FFWSICBKRCICMR-UHFFFAOYSA-N 0.000 description 4
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- -1 siloxanes Chemical class 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical group CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004632 polycaprolactone Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
코팅조성물의 조성비 (중량%) | 고형분 구성 물질(g) | 제조된 절연막에 대한 성능 평가 | |||||||
실록산 고분자 | 실리카 졸 | PGMEA | 실록산 고분자 | 실리카 입자 | 두께 (㎛) | 유전율 | 경도 (GPa) | 탄성계수 (Gpa) | |
실시예 1 (고형분 22 중량%) | 22 | 0 | 78 | 2.2 | 0 | 0.6315 | 2.70 | 1.035 | 5.465 |
21.45 | 5.5 | 73.05 | 2.145 | 0.055 | 0.8266 | 2.78 | 1.064 | 5.926 | |
실시예 2 (고형분 26 중량%) | 26 | 0 | 74 | 2.6 | 0 | 0.8371 | 2.70 | 1.101 | 5.741 |
25.35 | 6.5 | 68.15 | 2.535 | 0.065 | 1.1544 | 2.77 | 1.160 | 6.251 | |
실시예 3 (고형분 30 중량%) | 30 | 0 | 70 | 3 | 0 | 1.1238 | 2.70 | 1.039 | 5.611 |
29.25 | 7.5 | 63.25 | 2.925 | 0.075 | 1.4097 | 2.80 | 1.073 | 6.300 |
코팅조성물의 조성비 (중량%) | 고형분 구성 물질 (g) | 제조된 절연막에 대한 성능 평가 | |||||||||
실록산 고분자 | 실리카 졸 | 기공형성물질 | PGMEA | 실록산 고분자 | 실리카 입자 | 기공형성물질 | 두께 (㎛) | 유전율 | 경도 (GPa) | 탄성계수(Gpa) | |
실시예 4 (고형분 22 중량%) | 20.64 | 0 | 6.2 | 73.16 | 2.2 | 0 | 0.66 | 0.4536 | 2.24 | 0.538 | 3.098 |
20.12 | 5.14 | 6.2 | 68.54 | 2.145 | 0.055 | 0.66 | 0.5328 | 2.40 | 0.694 | 4.018 | |
실시예 5 (고형분 26 중량%) | 24.12 | 0 | 7.24 | 68.64 | 2.6 | 0 | 0.78 | 0.6620 | 2.24 | 0.483 | 3.068 |
23.52 | 6.01 | 7.24 | 63.24 | 2.535 | 0.065 | 0.78 | 0.7303 | 2.37 | 0.758 | 4.370 | |
실시예 6 (고형분 30 중량%) | 27.52 | 0 | 12.86 | 64.22 | 3 | 0 | 0.9 | 0.8894 | 2.24 | 0.542 | 2.976 |
26.83 | 6.84 | 8.26 | 58.07 | 2.925 | 0.075 | 0.9 | 0.9722 | 2.43 | 0.641 | 4.087 |
실시예 7에 따른 코팅 조성물중에 함유된 구성성분 함유량(g) | 제조된 절연막에 대한 성능 평가 | ||||
실록산 고분자 | 실리카 졸 | PGMEA | 유전율 | 경도 (GPa) | 탄성계수 (Gpa) |
2.6 | 0 (0 중량%)* | 7.4 | 2.70 | 1.101 | 5.741 |
2.457 | 1.43 (5.5 중량%)* | 6.113 | 2.79 | 1.207 | 6.274 |
2.314 | 2.86 (11 중량%)* | 4.826 | 2.84 | 1.220 | 6.730 |
2.054 | 5.46 (21 중량%)* | 2.486 | 3.09 | 1.223 | 7.311 |
1.794 | 8.06 (31 중량%)* | 0.146 | 3.14 | 1.365 | 8.882 |
* 괄호안의 중량%는 실록산 고분자 및 실리카 입자로 이루어진 고형분 함량에 대한 실리카 입자의 양을 나타낸 것이다. |
실시예 8에 따른 코팅 조성물 구성성분 사용량(g) | 제조된 절연막에 대한 성능 평가 | |||||
실록산 고분자 | 실리카 졸 | 기공형성 물질 | PGMEA | 유전율 | 경도 (GPa) | 탄성계수 (Gpa) |
2.6 | 0 (0 중량%)* | 0.78 | 7.4 | 2.24 | 0.483 | 3.072 |
2.457 | 1.43 (5.5 중량%)* | 0.78 | 6.113 | 2.35 | 0.723 | 4.616 |
2.314 | 2.86 (11 중량%)* | 0.78 | 4.826 | 2.48 | 0.862 | 5.391 |
2.054 | 5.46 (21 중량%)* | 0.78 | 2.486 | 2.59 | 1.064 | 6.123 |
1.794 | 8.06 (31 중량%)* | 0.78 | 0.146 | 2.75 | 1.175 | 7.648 |
* 괄호안의 중량%는 실록산 고분자 및 실리카 입자로 이루어진 고형분 함량에 대한 실리카 입자의 양을 나타낸 것이다. |
Claims (10)
- 5 내지 15nm의 평균 1차 입경, 70 내지 100nm의 평균 2차 입경, 0.01 내지 2 중량%의 잔류 유기물 함량 및 13ppm 이하의 잔류 금속이온 함량을 갖는 실리카졸; 유기실론산 고분자; 및 소수성 유기용매를 포함하며, 이때 조성물 중의 고형분이 실리카 입자 2 내지 50 중량% 및 유기실록산 고분자 50 내지 98 중량%로 이루어지고, 상기 고형분의 함량이 조성물 전체 중량을 기준으로 2 내지 40 중량% 범위인 것을 특징으로 하는 절연막 코팅 조성물.
- 제 1 항에 있어서, 실리카 졸이 실리카 입자를 알코올에 분산시킨 후 소수성 유기용매를 첨가하여 혼합하고 진공증류에 의해 알코올을 제거함으로써 수득된 것임을 특징으로 하는 코팅 조성물.
- 제 1 항에 있어서, 소수성 유기용매가 하나 이상의 카르보닐기(C=O)를 포함하고 탄소수가 5 내지 20개이며 비점이 100 내지 200℃인 것임을 특징으로 하는 코팅 조성물.
- 제 3 항에 있어서, 유기용매가 프로필렌 글리콜 모노에테르 아세테이트(PGMEA), 메틸이소부틸케톤(MIBK), 디에틸케톤, 메틸프로필케톤, 에틸프로필케톤, 디프로필케톤, 부틸에틸케톤, 메틸이소아밀케톤, 부틸이소프로필케톤 및 이들의 혼합물로부터 선택된 것임을 특징으로 하는 코팅 조성물.
- 삭제
- 제 1 항에 있어서, 유기실록산 고분자가 실록산 단량체 단독으로 이루어진 중합체, 실록산 단량체와 임의의 다른 단량체와의 공중합체, 또는 메틸실세스퀴녹산(methylsilsesquinoxane, MSQ), 하이드로실세스퀴녹산(hydrosilsesquinoxane, HSQ) 및 이들의 유도체로 이루어진 군으로부터 선택된 화합물 단독 또는 둘 이상을 조합하여 이루어진 중합체임을 특징으로 하는 코팅 조성물.
- 제 1 항에 있어서, 유기용매를 고형분 함량의 0.3 내지 30배로 포함함을 특징으로 하는 코팅 조성물.
- 제 1 항에 있어서, 기공형성물질을 고형분 함량의 0.1 내지 50 중량%의 양으로 추가로 포함함을 특징으로 하는 코팅 조성물.
- 제 8 항에 있어서, 기공형성물질이 시클로덱스트린, 폴리카프로락톤 및 이들의 유도체 중에서 선택된 하나 이상의 화합물임을 특징으로 하는 코팅 조성물.
- 제 1 항 내지 제 4 항 및 제 6 항 내지 제 9 항 중 어느 한 항의 코팅 조성물을 기판에 코팅한 후 열경화 및 소성시켜 얻은 절연막.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030095793A KR100572801B1 (ko) | 2003-12-23 | 2003-12-23 | 기계적 특성이 우수한 절연막 코팅 조성물 |
TW093140009A TWI349293B (en) | 2003-12-23 | 2004-12-22 | Insulating film composition having improved mechanical property |
US11/021,048 US7229672B2 (en) | 2003-12-23 | 2004-12-22 | Insulating film composition having improved mechanical property |
CNA2004101048273A CN1644622A (zh) | 2003-12-23 | 2004-12-23 | 具有改善的机械特性的绝缘膜合成物 |
JP2004374163A JP2005184011A (ja) | 2003-12-23 | 2004-12-24 | 改善された機械的性質を有する絶縁膜組成 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030095793A KR100572801B1 (ko) | 2003-12-23 | 2003-12-23 | 기계적 특성이 우수한 절연막 코팅 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050064430A KR20050064430A (ko) | 2005-06-29 |
KR100572801B1 true KR100572801B1 (ko) | 2006-04-19 |
Family
ID=34747728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030095793A KR100572801B1 (ko) | 2003-12-23 | 2003-12-23 | 기계적 특성이 우수한 절연막 코팅 조성물 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7229672B2 (ko) |
JP (1) | JP2005184011A (ko) |
KR (1) | KR100572801B1 (ko) |
CN (1) | CN1644622A (ko) |
TW (1) | TWI349293B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101119141B1 (ko) * | 2005-01-20 | 2012-03-19 | 삼성코닝정밀소재 주식회사 | 폴리머 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 |
KR100685734B1 (ko) * | 2005-06-07 | 2007-02-26 | 삼성전자주식회사 | 다공성 스핀 온 글래스 조성물, 이의 제조 방법 및 이를이용한 다공성 실리콘 산화막 제조 방법 |
JP4424341B2 (ja) * | 2005-12-02 | 2010-03-03 | セイコーエプソン株式会社 | 薄膜トランジスタ、電子回路、表示装置および電子機器 |
US9060560B2 (en) * | 2007-08-10 | 2015-06-23 | Greenhill Antiballistics Corporation | Composite material |
WO2009152301A2 (en) * | 2008-06-12 | 2009-12-17 | 3M Innovative Properties Company | Low ion content, nanoparticle-containing resin systems |
CN101445396B (zh) * | 2008-12-09 | 2011-08-31 | 西安交通大学 | 一种瓷绝缘子表面超疏水性涂层的制备方法 |
CN101659798B (zh) * | 2009-09-29 | 2011-02-09 | 包头市山晟新能源有限责任公司 | 绝缘涂料、多晶硅提纯设备及其防电离与防短路方法、电气设备 |
US10926513B2 (en) | 2010-10-18 | 2021-02-23 | Greenhill Antiballistics Corporation | Gradient nanoparticle-carbon allotrope-polymer composite material |
JP5281188B1 (ja) * | 2012-11-26 | 2013-09-04 | 有限会社 ナプラ | 絶縁性ペースト、電子デバイス及び絶縁部形成方法 |
CN103387792B (zh) * | 2013-08-22 | 2015-08-19 | 苏州羽帆新材料科技有限公司 | 一种绝缘颜料 |
US12191228B2 (en) | 2016-04-06 | 2025-01-07 | Sanctioned Risk Solutions, Inc. | Heat dissipation using nanoscale materials |
CN106633909B (zh) * | 2017-01-13 | 2018-09-25 | 深圳市汉华热管理科技有限公司 | 绝缘浆料及绝缘处理的方法 |
KR102668437B1 (ko) | 2019-09-27 | 2024-05-23 | 후지필름 가부시키가이샤 | 분산액, 조성물, 경화막, 컬러 필터, 고체 촬상 소자 및 화상 표시 장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2433776A (en) * | 1941-09-03 | 1947-12-30 | Monsanto Chemicals | Preparation of sols |
US5013585A (en) * | 1989-06-13 | 1991-05-07 | Shin-Etsu Chemical Co., Ltd. | Method for the preparation of surface-modified silica particles |
CN1071366C (zh) * | 1995-04-28 | 2001-09-19 | 日本油脂Basf涂料株式会社 | 涂料组合物及制法和无机氧化物溶胶分散组分的制法 |
JP3813268B2 (ja) * | 1996-03-25 | 2006-08-23 | 触媒化成工業株式会社 | 低誘電率シリカ系被膜形成用塗布液および低誘電率被膜付基材 |
JP3635156B2 (ja) * | 1996-08-19 | 2005-04-06 | ダウ コーニング アジア株式会社 | 硬化性ポリメチルシルセスキオキサン組成物 |
JPH10310406A (ja) * | 1997-03-12 | 1998-11-24 | Catalysts & Chem Ind Co Ltd | 有機化合物修飾無機化合物ゾル |
US6599631B2 (en) * | 2001-01-26 | 2003-07-29 | Nanogram Corporation | Polymer-inorganic particle composites |
US6436513B1 (en) * | 1997-09-17 | 2002-08-20 | Oji Paper Co., Ltd. | Ink jet recording material |
EP1026213B1 (en) * | 1998-09-01 | 2014-11-05 | JGC Catalysts and Chemicals Ltd. | Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film |
US6180249B1 (en) * | 1998-09-08 | 2001-01-30 | General Electric Company | Curable silicone foul release coatings and articles |
JP4631119B2 (ja) * | 2000-01-28 | 2011-02-16 | Jsr株式会社 | 疎水化コロイダルシリカの製造方法 |
JP2002208565A (ja) * | 2001-01-11 | 2002-07-26 | Sharp Corp | 半導体装置、その製造方法および液晶表示装置 |
DE60204502T2 (de) * | 2001-03-27 | 2006-05-18 | Samsung Electronics Co., Ltd., Suwon | Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer |
JP4482679B2 (ja) * | 2002-03-19 | 2010-06-16 | 独立行政法人産業技術総合研究所 | 任意の表面特性及び表面形状を有する基体表面へのシリカ薄膜の製造方法及び複合構造体 |
-
2003
- 2003-12-23 KR KR1020030095793A patent/KR100572801B1/ko not_active IP Right Cessation
-
2004
- 2004-12-22 US US11/021,048 patent/US7229672B2/en active Active
- 2004-12-22 TW TW093140009A patent/TWI349293B/zh not_active IP Right Cessation
- 2004-12-23 CN CNA2004101048273A patent/CN1644622A/zh active Pending
- 2004-12-24 JP JP2004374163A patent/JP2005184011A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US7229672B2 (en) | 2007-06-12 |
TW200531085A (en) | 2005-09-16 |
CN1644622A (zh) | 2005-07-27 |
KR20050064430A (ko) | 2005-06-29 |
JP2005184011A (ja) | 2005-07-07 |
US20050159001A1 (en) | 2005-07-21 |
TWI349293B (en) | 2011-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4662718B2 (ja) | 集積回路用途用の低金属多孔質シリカ誘電体 | |
TWI261543B (en) | Low dielectric materials and methods for making same | |
KR100572801B1 (ko) | 기계적 특성이 우수한 절연막 코팅 조성물 | |
US20060159938A1 (en) | Composition for forming low dielectric thin film comprising polymer nanoparticles and method of preparing low dielectric thin film using the same | |
US7381442B2 (en) | Porogens for porous silica dielectric for integral circuit applications | |
KR100760405B1 (ko) | 중합체 분해로부터 획득가능한 저 유전성 나노-다공성 물질 | |
KR101202955B1 (ko) | 다공성 나노 입자를 포함하는 저유전 박막 형성용 조성물및 이를 이용한 저유전 박막의 제조방법 | |
US20070037411A1 (en) | Method of manufacturing an electronic device | |
JP2003508895A (ja) | Ulsi用途のためにシロキサンポリマーで処理されたナノポーラスシリカ | |
JP2006500769A (ja) | 低k材料用の中間層接着促進剤 | |
US6015457A (en) | Stable inorganic polymers | |
JP2005517784A (ja) | オルガノシロキサン | |
WO2004026765A1 (ja) | 多孔質フィルムの改質方法及び改質された多孔質フィルム並びにその用途 | |
KR101097713B1 (ko) | 코팅 조성물 및 이를 사용하여 제조한 저유전 실리카질재료 | |
JP2009170923A (ja) | 超低誘電率、高硬度のラメラ構造薄膜及びその製造方法 | |
WO2005078743A1 (en) | Cyclodextrin derivatives as pore-forming templates, and low dielectric materials prepared by using the same | |
US20080287573A1 (en) | Ultra-Low Dielectrics Film for Copper Interconnect | |
JP2001520805A (ja) | 等級化された密度を有するナノポーラス誘電体フィルム及びそのようなフィルムの製造方法 | |
JP2002534804A (ja) | 有機ヒドリドシロキサン樹脂による誘電フィルム | |
JP2006165540A (ja) | 低誘電性メソポーラス薄膜の製造方法 | |
KR100989964B1 (ko) | 폴리실세스퀴옥산계 유무기 혼성 그라프트 공중합체 및그의 제조에 이용되는 기공 형성제를 포함하는 유기실란화합물과 그를 포함하는 절연막의 제조방법 | |
JP2006503165A (ja) | オルガノシロキサン | |
US20060135633A1 (en) | Porous low-dielectric constant (k) thin film with controlled solvent diffusion |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20031223 |
|
PA0201 | Request for examination | ||
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20051116 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20060328 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20060413 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20060412 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20090407 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20100402 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20110411 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20120327 Start annual number: 7 End annual number: 7 |
|
FPAY | Annual fee payment |
Payment date: 20130327 Year of fee payment: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20130327 Start annual number: 8 End annual number: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140311 Year of fee payment: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20140311 Start annual number: 9 End annual number: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150302 Year of fee payment: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20150302 Start annual number: 10 End annual number: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160329 Year of fee payment: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20160329 Start annual number: 11 End annual number: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170329 Year of fee payment: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20170329 Start annual number: 12 End annual number: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180329 Year of fee payment: 13 |
|
PR1001 | Payment of annual fee |
Payment date: 20180329 Start annual number: 13 End annual number: 13 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20200124 |