KR100565736B1 - Reflecting substrate of reflective type liquid crystal display devices - Google Patents
Reflecting substrate of reflective type liquid crystal display devices Download PDFInfo
- Publication number
- KR100565736B1 KR100565736B1 KR1019980054072A KR19980054072A KR100565736B1 KR 100565736 B1 KR100565736 B1 KR 100565736B1 KR 1019980054072 A KR1019980054072 A KR 1019980054072A KR 19980054072 A KR19980054072 A KR 19980054072A KR 100565736 B1 KR100565736 B1 KR 100565736B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- gate
- shielding metal
- common wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 36
- 238000002161 passivation Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000003068 static effect Effects 0.000 abstract description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- -1 Acryl Chemical group 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
Abstract
본 발명에 따른 반사형 액정표시장치의 반사판에서는 차광금속막이 보호막을 사이에 두고 박막트랜지스터 위에 형성되며 기판 위에 형성된 공통배선과 연결된다. 박막트랜지스터로 입사하는 빛은 차광금속막에 의해 차단되어, 블랙메트릭스 없이 빛으로 인한 비정질실리콘(a-Si)층의 누설전류가 방지되고, 상기 빛이 차광금속막에 의해 반사되어 반사휘도의 향상에 기여하게 된다. 또한, 차광금속막의 전압이 공통배선의 전압과 동일하도록 유지되기 때문에 정전기 등에 의해 차광금속막의 전압이 높아지는 것이 방지되어 박막트랜지스터의 이중게이트(dual gate) 문제가 발생하지 않고, 박막트랜지스터의 스위칭 동작이 안정된다.In the reflective plate of the reflective LCD according to the present invention, a light shielding metal film is formed on the thin film transistor with a protective film therebetween and connected to the common wiring formed on the substrate. Light incident on the thin film transistor is blocked by the light shielding metal film to prevent leakage current of the amorphous silicon (a-Si) layer due to light without black matrix, and the light is reflected by the light shielding metal film to improve reflection brightness. Will contribute to In addition, since the voltage of the light-shielding metal film is maintained to be the same as that of the common wiring, the voltage of the light-shielding metal film is prevented from increasing due to static electricity, so that a double gate problem of the thin film transistor does not occur, and the switching operation of the thin film transistor is prevented. It is stable.
Description
본 발명은 반사형 액정표시장치의 반사판에 관한 것으로, 특히 블랙메트릭스 없이 빛으로 인한 박막트랜지스터의 비정질실리콘(a-Si)층의 누설전류를 방지하기 위해 박막트랜지스터 위에 차광금속막을 형성한 반사형 액정표시장치의 반사판에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective plate of a reflective liquid crystal display device. In particular, a reflective liquid crystal in which a light shielding metal film is formed on a thin film transistor to prevent leakage current of an amorphous silicon (a-Si) layer of the thin film transistor due to light without black metrics. A reflective plate of a display device.
액정표시장치는 동작모드에 따라, 개략적으로 TN(Twisted Nematic)형, GH(Guest Host)형, ECB(Electrically Controlled Birefringence)형 및 OCB(Optically Compensated Birefringence)형 등으로 나눌 수 있고, 광원의 이용방법에 따라, 백라이트를 이용하는 투과형 액정표시장치와 외부의 광원을 이용하는 반사형 액정표시장치의 두 종류로 분류할 수 있다. 근래에는 백라이트(back light)를 광원으로 사용하는 투과형 액정표시장치가 널리 이용되고 있으나, 이러한 백라이트의 사용은 액정표시장치의 무게와 부피를 증가시킬 뿐만 아니라, 소비전력이 높다는 문제점을 가진다. 백라이트가 내장된 액정표시장치의 상기한 문제점들을 극복하고자, 최근에는 백라이트를 사용하지 않는 반사형 액정표시장치에 대한 연구가 활발하게 진행되고 있다. The liquid crystal display can be roughly divided into twisted nematic (TN) type, guest host (GH) type, electrically controlled birefringence type (ECB) type, and optically compensated birefringence type (OCB) type according to the operation mode. Accordingly, the present invention can be classified into two types, a transmissive liquid crystal display using a backlight and a reflective liquid crystal display using an external light source. Recently, a transmissive liquid crystal display using a backlight as a light source has been widely used, but the use of such a backlight not only increases the weight and volume of the liquid crystal display, but also has a problem of high power consumption. In order to overcome the above problems of a liquid crystal display device with a built-in backlight, researches on a reflective liquid crystal display device that does not use a backlight have been actively conducted in recent years.
일반적인 반사형 액정표시장치는 기본적으로 편광판과 투명전극이 형성되는 상판과 반사전극이 형성되는 하판과 그 사이의 액정층으로 구성되며, 하판에 형성되는 게이트배선 및 데이터배선에 의해 복수의 화소영역으로 나뉘며, 각 화소영역 마다 스위칭소자로써의 박막트랜지스터가 하나씩 형성된다. 상기 반사전극은 각 화소영역 마다 하나씩 형성되며 상기 박막트랜지스터의 드레인전극과 연결된다. A general reflective liquid crystal display device is basically composed of a top plate on which a polarizer and a transparent electrode are formed, a bottom plate on which a reflective electrode is formed, and a liquid crystal layer therebetween, and are divided into a plurality of pixel regions by gate wiring and data wiring formed on the bottom plate. Each thin film transistor is formed as a switching element in each pixel region. One reflective electrode is formed in each pixel region and is connected to the drain electrode of the thin film transistor.
이러한 구조에서는 박막트랜지스터로 입사한 빛에 의해 누설전류(leakage current)가 발생하여 박막트랜지스터에 오작동을 일으키며, 이러한 누설전류를 방지하기 위해 일반적으로 박막트랜지스터 영역의 상판에 금속막 또는 흑색수지로 블랙메트릭스를 형성하여 박막트랜지스터 영역으로 입사하는 외부의 빛을 차단한다. 이러한 블랙메트릭스의 형성은 누설전류를 방지하고 콘트라스트비를 향상시키지만 반사형 액정표시장치의 반사율을 저하시키는 원인이 된다. 반사율을 저하시키지 않으면서 누설전류를 방지하기 위해 반사전극으로 박막트랜지스터를 덮는 방법이 있다. 하지만, 이렇게 반사전극을 박막트랜지스터 위에 형성하면, 반사전극이 또 하나의 게이트전극으로써 동작하게 되는 이중게이트(dual gate) 현상이 발생하여 박막트랜지스터가 오작동을 일으키게 된다. In such a structure, leakage current is generated by light incident to the thin film transistor, causing a malfunction in the thin film transistor.In order to prevent such leakage current, the black matrix is generally formed by a metal film or black resin on the top plate of the thin film transistor region. Blocks the external light incident to the thin film transistor region by forming a. The formation of such black matrices prevents leakage current and improves the contrast ratio, but causes a decrease in reflectance of the reflective liquid crystal display. There is a method of covering the thin film transistor with a reflective electrode to prevent leakage current without lowering the reflectance. However, when the reflective electrode is formed on the thin film transistor, a double gate phenomenon occurs in which the reflective electrode operates as another gate electrode, causing the thin film transistor to malfunction.
이러한 문제를 해결한 구조가 미국특허 5,500,750에 개시되었다. 상기 특허의 반사형 액정표시장치에는 박막트랜지스터 위에 보호막을 사이에 두고 차광금속막이 형성되어 있으며, 차광금속막은 반사전극과 전기적으로 분리되어 있다. 따라서, 차광금속막에는 전압이 인가되지 않기 때문에 박막트랜지스터에 전기적 영향을 주지 않으며, 박막트랜지스터로 입사하는 빛을 차단함과 동시에 반사하기 때문에, 반사율을 저하시키지 않으면서 박막트랜지스터의 누설전류를 방지하게 된다. A structure that solves this problem is disclosed in US Pat. No. 5,500,750. In the reflective LCD of the patent, a light shielding metal film is formed on a thin film transistor with a protective film interposed therebetween, and the light shielding metal film is electrically separated from the reflective electrode. Therefore, since no voltage is applied to the light-shielding metal film, it does not have an electrical effect on the thin film transistor, and simultaneously blocks and reflects light incident to the thin film transistor, thereby preventing leakage current of the thin film transistor without reducing the reflectance. do.
하지만, 액정의 움직임에 의해 마찰이 생길수 있으며 이러한 마찰 등이 원인이 되어 정전기가 생겨 차광금속막에 전하가 저장될 경우, 차광금속막이 상기 전하에 의해 높은 전압을 유지할 수 있게 되고, 상기한 반사전극이 박막트랜지스터를 덮었을 때와 같은 이중 게이트의 문제가 발생한다.However, friction may occur due to the movement of the liquid crystal. When the charge is stored in the light shielding metal film due to the friction and the like, the light shielding metal film may maintain a high voltage by the charge. The same problem of double gate occurs when the thin film transistor is covered.
본 발명은 상기한 종래기술의 문제점을 감안하여 이루어진 것으로, 반사율이 향상되고 스위칭소자로써의 박막트랜지스터가 안정된 스위칭 동작을 하는 반사형 액정표시장치의 반사판을 제공하는 것을 목적으로 한다. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the prior art, and an object of the present invention is to provide a reflection plate of a reflection type liquid crystal display device in which reflectance is improved and a thin film transistor as a switching element performs stable switching operation.
상기한 목적을 달성하기 위한 본 발명에 따른 반사형 액정표시장치는 기판과, 상기 기판 위에 형성되어 복수의 화소영역을 정의하는 복수의 게이트배선 및 데이터배선과, 상기 각 화소영역 마다 형성된 박막트랜지스터와, 상기 박막트랜지스터, 게이트배선 및 데이터배선과 전기적으로 절연되고 상기 기판 위에 형성된 공통배선과, 상기 박막트랜지스터 위에 형성된 보호막과, 상기 공통배선과 전기적으로 연결되며 상기 보호막 위에 상기 박막트랜지스터와 오버랩되도록 형성된 차광금속막을 포함하여 구성된다. According to an exemplary embodiment of the present invention, a reflective liquid crystal display device includes a substrate, a plurality of gate wirings and data wirings formed on the substrate to define a plurality of pixel regions, and a thin film transistor formed in each pixel region; And a common wiring electrically insulated from the thin film transistor, the gate wiring, and the data wiring and formed on the substrate, a passivation layer formed on the thin film transistor, and a light shielding layer electrically connected to the common wiring and overlapping the thin film transistor on the passivation layer. It is comprised including a metal film.
본 발명에 따른 반사형 액정표시장치의 반사판에서는 상기 차광금속막이 보호막을 사이에 두고 박막트랜지스터 위에 형성되고, 상기 공통배선과 연결된다. 따라서, 박막트랜지스터로 입사하는 빛은 차광금속막에 의해 차단되어 누설전류가 방지되고, 상기 빛이 차광금속막에 의해 반사되어 반사휘도의 향상에 기여하게 된다. 또한, 차광금속막의 전압이 공통배선의 전압과 동일하도록 유지되기 때문에 박막트랜지스터의 이중게이트 문제가 발생하지 않아서, 박막트랜지스터의 스위칭 동작이 안정된다. In the reflective plate of the reflective LCD according to the present invention, the light shielding metal film is formed on the thin film transistor with a protective film therebetween and connected to the common wiring. Therefore, light incident on the thin film transistor is blocked by the light shielding metal film to prevent leakage current, and the light is reflected by the light shielding metal film, thereby contributing to the improvement of the reflected brightness. In addition, since the voltage of the light shielding metal film is maintained to be the same as the voltage of the common wiring, the double gate problem of the thin film transistor does not occur, so that the switching operation of the thin film transistor is stabilized.
이하, 도면을 참조하여 본 발명에 따른 반사형 액정표시장치의 반사판을 상세히 설명한다.Hereinafter, the reflective plate of the reflective liquid crystal display according to the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명에 따른 반사형 액정표시장치의 반사판을 나타낸 평면도이고, 도 2는 A-A'선의 단면도이며, 도 3은 B-B'선의 단면도이다. 도면에는 설명의 편의상 하나의 화소영역만을 나타내었으며, 실제로는 복수의 게이트배선(1) 및 데이터배선(2)에 의해 복수의 화소영역이 정의되며, 각 화소영역은 도면에 나타낸 구조를 갖는다.1 is a plan view illustrating a reflecting plate of a reflective liquid crystal display device according to the present invention, FIG. 2 is a cross-sectional view taken along line A-A ', and FIG. 3 is a cross-sectional view taken along line B-B'. In the drawings, only one pixel region is shown for convenience of description, and in reality, a plurality of pixel regions are defined by the plurality of gate wirings 1 and the data wirings 2, and each pixel region has a structure shown in the drawings.
도면에 나타낸 바와 같이, 본 발명에 따른 반사판은 기판(10)과, 기판 위에 동일한 층으로써 형성되며 도 1에서 이점쇄선으로 표시한 게이트전극(8), 게이트배선(1), 및 공통배선(3)과, 그 위로 기판 전체에 걸쳐 형성되며 공통배선(3) 영역의 일부분에 제1홀(31)을 갖는 게이트절연막(12)과, 게이트전극(8) 영역의 게이트절연막(12) 위에 형성된 활성반도체층(9)과, 활성반도체층(9)의 소스 및 드레인영역 위에 형성된 오우믹콘택층(11)과, 그 위에 동일한 층으로써 형성되며, 도 1에서 일점쇄선으로 표시한 소스전극(6), 드레인전극(7), 반사전극(4), 및 저장전극(storage electrode)(25)과, 그 위로 기판 전체에 걸쳐 형성되며 드레인전극(7) 영역에 제2홀(32)을 갖고 저장전극(25) 영역에 제3홀(33)을 가지며, 도3에 나타낸 바와 같이, 제1홀(31)과 같은 위치에 홀을 갖는 보호막(13)과, 보호막(13) 위에 형성되고 제2홀(32)을 통하여 드레인전극(7)과 연결되며 제3홀(33)을 통하여 저장전극(25)과 연결되고 데이터배선(2) 및 게이트배선(1)의 일부와 중첩되도록 화소영역에 형성된 반사전극(4)과, 보호막(13) 위에 형성되며 제1홀(31)을 통하여 공통배선(3)과 연결되고 활성반도체층(9) 영역을 포함하도록 보호막(13) 위에 형성된 차광금속막(20)으로 구성된다. 도 1에는 편의상 활성반도체층(9)과 오우믹콘택층(11)을 도시하지 않았으며, 도 2에 나타낸 참조번호 14는 게이트전극(8), 게이트절연막(12), 활성반도체층(9), 오우믹콘택층(11), 소스전극(6), 및 드레인전극(7)으로 이루어지는 박막트랜지스터를 나타낸다.As shown in the figure, the reflecting plate according to the present invention is formed of the same layer on the substrate 10 and the gate electrode 8, the gate wiring 1, and the common wiring 3, which are indicated by the double-dotted lines in FIG. And a gate insulating film 12 formed over the entire substrate and having a first hole 31 in a portion of the common wiring 3 region, and an active layer formed on the gate insulating film 12 in the gate electrode 8 region. The source electrode 6 formed of the semiconductor layer 9, the ohmic contact layer 11 formed on the source and drain regions of the active semiconductor layer 9, and the same layer thereon, indicated by dashed lines in FIG. , The drain electrode 7, the reflective electrode 4, and the storage electrode 25, and are formed over the entire substrate, and have a second hole 32 in the drain electrode 7 region. A protective film 13 having a third hole 33 in the region 25 and having a hole at the same position as the first hole 31 as shown in FIG. , Formed on the passivation layer 13, connected to the drain electrode 7 through the second hole 32, connected to the storage electrode 25 through the third hole 33, and connected to the data line 2 and the gate line 1. The reflective electrode 4 formed in the pixel region and the passivation layer 13 so as to overlap with a portion of the?, And connected to the common wiring 3 through the first hole 31 and include the active semiconductor layer 9 region. It consists of the light shielding metal film 20 formed on the protective film 13. For convenience, the active semiconductor layer 9 and the ohmic contact layer 11 are not shown in FIG. 1, and reference numeral 14 shown in FIG. 2 denotes a gate electrode 8, a gate insulating film 12, and an active semiconductor layer 9. , A thin film transistor comprising an ohmic contact layer 11, a source electrode 6, and a drain electrode 7.
차광금속막(20)은 박막트랜지스터(14)로 입사하는 빛을 차단하여 박막트랜지스터(14)의 누설전류를 방지하기 위한 것으로, 빛을 흡수하지 않고 반사하기 때문에 반사휘도의 향상에 기여하며, 반사전극(4)과 전기적으로 분리되어 있기 때문에 반사전극(4)의 전압에 의한 이중게이트의 문제점이 발생하지 않는다. 특히, 차광금속막(20)이 게이트절연막(12)과 보호막(13)의 제1홀(31)을 통하여 공통배선(3)과 연결되어 그 전압이 공통배선(3)의 전압과 같도록 고정되기 때문에, 차광금속막(20)이 단지 다른 전극과 분리되어 있을 경우 정전기 등에 의해 발생할 수 있었던 이중게이트의 문제가 완전히 방지된다.The light shielding metal film 20 is for preventing leakage current of the thin film transistor 14 by blocking light incident to the thin film transistor 14, and reflects the light without absorbing light, thereby contributing to the improvement of reflection brightness and reflection. Since it is electrically separated from the electrode 4, the problem of the double gate caused by the voltage of the reflective electrode 4 does not occur. In particular, the light shielding metal film 20 is connected to the common wiring 3 through the first hole 31 of the gate insulating film 12 and the passivation layer 13 so that the voltage thereof is the same as the voltage of the common wiring 3. Therefore, the problem of the double gate, which may have occurred due to static electricity or the like, when the light shielding metal film 20 is only separated from other electrodes, is completely prevented.
저장전극(25)은 도 2에 나타낸 바와 같이 보호막(13)의 제3홀(33)을 통해 반사전극(4)에 연결되고 게이트절연막(12)을 사이에 두고 공통배선(3)과 축적용량(storage capacitance)을 형성하여 반사전극(4)에 인가되는 화소데이터전압을 일정시간동안 유지시키는 역할을 한다.As shown in FIG. 2, the storage electrode 25 is connected to the reflective electrode 4 through the third hole 33 of the passivation layer 13, and the common wiring 3 and the storage capacitor are disposed with the gate insulating layer 12 interposed therebetween. (storage capacitance) is formed to maintain the pixel data voltage applied to the reflective electrode 4 for a predetermined time.
반사전극(4)은 Al이나 Al합금과 같은 금속막으로 형성되며 반사율을 높이고 화소영역의 경계로서 형성되는 게이트배선(1) 및 데이터배선(2) 영역으로 빛이 새는 것을 방지하기 위해 두 배선(1,2)의 일부와 오버랩되도록 형성되며, 차광금속막(20)도 이러한 목적으로 두 배선(1,2)의 일부와 오버랩되도록 형성된다. 도면에 나타낸 반사전극(4)은 홀이 형성되는 영역을 제외하고 표면이 평탄하게 형성되지만, 반사되는 빛을 산란시킬 목적으로 표면을 요철모양으로 형성할 수도 있다.The reflective electrode 4 is formed of a metal film such as Al or Al alloy, and has two wirings (1) to increase the reflectance and to prevent light from leaking to the region of the gate wiring 1 and the data wiring 2 formed as the boundary of the pixel region. The light shielding metal film 20 is also formed to overlap with a part of the two wirings 1 and 2 for this purpose. Although the surface of the reflective electrode 4 shown in the drawing is flat except for the region where the hole is formed, the surface may be formed in a concave-convex shape for the purpose of scattering the reflected light.
상기한 구조의 본 발명에 따른 반사형 액정표시장치의 반사판을 제조하기 위해서는, 우선 기판(10) 위에 Al, Al합금, Mo/Al 이중층, 또는 Cr/Al 이중층을 스퍼터링(sputtering)법으로 적층하고 사진식각(photolithography)법으로 패터닝하여 게이트전극(8), 게이트배선(1), 공통배선(3)을 형성한다. In order to manufacture the reflecting plate of the reflective LCD according to the present invention having the above structure, first, an Al, Al alloy, Mo / Al double layer, or Cr / Al double layer is laminated on the substrate 10 by sputtering. The gate electrode 8, the gate wiring 1, and the common wiring 3 are formed by patterning by photolithography.
이어서, 그 위에 SiNx 또는 SiOx 등을 플라즈마 CVD(plasma chmeical vapor deposition)법으로 적층하여 게이트절연막(12)을 형성한다.Subsequently, SiNx or SiOx or the like is laminated on the substrate by plasma CVD (plasma chemical vapor deposition) to form a gate insulating film 12.
이어서, 그 위에 비정질실리콘(amorphous silicon)을 플라즈마 CVD방법에 의해 적층하고 패터닝하여 활성반도체층을 형성하고, 그 위에 n+ a-Si을 적층하고 패터닝하여 오우믹콘택층(11)을 형성한다.Subsequently, amorphous silicon is deposited and patterned thereon by a plasma CVD method to form an active semiconductor layer, and n + a-Si is laminated and patterned thereon to form an ohmic contact layer 11.
이어서, 그 위에 Al, Cr, Ti, Al합금 등의 금속을 스퍼터링방법으로 적층한 후 패터닝하여 소스전극(6), 드레인전극(7), 및 저장전극(25)을 형성한다.Subsequently, metals such as Al, Cr, Ti, and Al alloys are stacked thereon by a sputtering method and then patterned to form a source electrode 6, a drain electrode 7, and a storage electrode 25.
이어서, SiOx나 SiNx 등과 같은 무기물, 또는 BCB(benzocyclobutene)나 아크릴(Acryl)과 같은 유기물을 기판(10) 전체에 적층하여 보호막(13)을 형성한 후, 제1홀(31) 영역의 보호막(13) 및 게이트절연막(12)과, 제2(32), 제3홀(33) 영역의 보호막(13)을 동시에 식각한다. 이때, 유기막으로 보호막을 형성하기 위해서는 2μm이상의 두께로 형성하는 것이 바람직하다. 또한, 반사전극(4)의 표면을 요철모양으로 하기 위해서 보호막의 표면을 요철모양으로 형성하는 것도 가능하며, 요철모양의 보호막을 형성하기 위해서는 감광성수지막을 스핀코팅법으로 도포하고 복수의 원 또는 타원모양 개구부를 갖는 마스크로 감광성수지막을 차단한 상태로 자외선을 조사하고 현상한 후 열처리하여 보호막의 표면이 요철모양이 되도록 한다. 이때, 상기 홀(31,32,33) 영역도 동시에 식각되도록 한다. 감광성수지막의 식각하고자하는 부분을 부분현상하여 한층으로 요철면을 갖는 보호막을 형성할 수도 있고, 완전현상한 후 그 위에 유기막 또는 무기막으로 오버코트층을 추가로 도포하여 두 층으로 된 보호막을 형성할 수도 있다.Subsequently, an inorganic material such as SiOx, SiNx, or the like, or an organic material such as benzocyclobutene (BCB) or acrylic (Acryl) is laminated on the entire substrate 10 to form the protective film 13, and then the protective film of the first hole 31 region ( 13 and the gate insulating film 12 and the protective film 13 in the second 32 and third hole 33 regions are simultaneously etched. At this time, in order to form a protective film with an organic film, it is preferable to form in thickness of 2 micrometers or more. In addition, in order to form the surface of the reflective electrode 4 in the form of irregularities, the surface of the protective film may be formed in the shape of the irregularities. To form the protective film in the shape of the irregularities, the photosensitive resin film may be applied by spin coating to form a plurality of circles or ellipses. The mask having the shape openings is irradiated with ultraviolet rays in a state in which the photosensitive resin film is blocked, developed, and then heat-treated so that the surface of the protective film is irregular. At this time, the holes 31, 32, and 33 are also etched at the same time. Partial development of the portion to be etched of the photosensitive resin film may be used to form a protective film having an uneven surface as a layer. After complete development, an overcoat layer is additionally applied with an organic film or an inorganic film thereon to form a two-layered protective film. You may.
이어서, 그 위에 Al이나 Al합금을 스퍼터링법으로 적층한 후 사진식각법으로 패터닝하여 반사전극(4)과 차광금속막(20)을 형성한다.Subsequently, Al or an Al alloy is deposited thereon by sputtering, and then patterned by photolithography to form the reflective electrode 4 and the light shielding metal film 20.
도면에 나타내지 않았지만, 반사전극(4) 위에는 액정의 배향을 결정하는 배향막이 형성되며, 이 배향막은 광반응성 물질이나 폴리이미드를 기판 전체에 도포한 후 광배향 또는 러빙을 실시하여 배향막을 형성한다.Although not shown in the drawing, an alignment film for determining the alignment of the liquid crystal is formed on the reflective electrode 4, and the alignment film is formed by applying a photoreactive substance or polyimide to the entire substrate and then performing photo alignment or rubbing.
본 발명은 반사형 액정표시장치의 반사판에만 국한되지 않으며, 상기 반사판을 포함한 반사형 액정표시장치 또는 이것을 응용한 다른 모든 장치를 포함한다.The present invention is not limited to the reflection plate of the reflection type liquid crystal display device, but includes the reflection type liquid crystal display device including the reflection plate or all other devices using the same.
본 발명에 따른 반사형 액정표시장치의 반사판에서는 반사전극(4)으로부터 절연된 차광금속막(20)이 보호막(13)을 사이에 두고 박막트랜지스터(14) 위에 형성되고, 보호막(13) 및 게이트절연막(12)의 홀(31,32,33)을 통하여 공통배선(3)과 연결된다. 따라서, 박막트랜지스터(14)로 입사하는 빛이 차광금속막(20)에 의해 차단되어, 박막트랜지스터의 누설전류가 방지될 뿐만아니라, 상기 빛이 차광금속막(20)에 의해 반사되어 반사휘도의 향상에 기여하게 된다. 또한, 차광금속막(20)의 전압이 공통배선(3)의 전압과 동일하도록 유지되기 때문에 박막트랜지스터의 이중게이트 문제가 발생하지 않아서, 박막트랜지스터의 스위칭 동작이 안정된다.In the reflective plate of the reflective LCD according to the present invention, a light shielding metal film 20 insulated from the reflective electrode 4 is formed on the thin film transistor 14 with the protective film 13 therebetween, and the protective film 13 and the gate The common wiring 3 is connected through the holes 31, 32, and 33 of the insulating layer 12. Therefore, the light incident on the thin film transistor 14 is blocked by the light shielding metal film 20, and the leakage current of the thin film transistor is not only prevented, but the light is reflected by the light shielding metal film 20 to reflect the luminance. Contribute to improvement. In addition, since the voltage of the light shielding metal film 20 is maintained to be the same as the voltage of the common wiring 3, the double gate problem of the thin film transistor does not occur, and the switching operation of the thin film transistor is stabilized.
도 1은 본 발명의 반사형 액정표시장치의 반사판을 나타낸 평면도이다.1 is a plan view showing a reflecting plate of the reflective liquid crystal display of the present invention.
도 2는 도 1의 A-A'선 단면도이다.FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1.
도 3은 도 1의 B-B'선 단면도이다.3 is a cross-sectional view taken along line BB ′ of FIG. 1.
-도면의 주요부분에 대한 부호의 설명- Explanation of symbols on the main parts of the drawing
1: 게이트배선 2: 데이터배선 3: 공통배선 1: gate wiring 2: data wiring 3: common wiring
4: 반사전극 6: 소스전극 7: 드레인전극 4: reflective electrode 6: source electrode 7: drain electrode
8: 게이트전극 20: 차광금속막 25: 저장전극 8: gate electrode 20: shading metal film 25: storage electrode
31: 제1홀 32: 제2홀 33: 제3홀 31: first hole 32: second hole 33: third hole
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980054072A KR100565736B1 (en) | 1998-12-10 | 1998-12-10 | Reflecting substrate of reflective type liquid crystal display devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980054072A KR100565736B1 (en) | 1998-12-10 | 1998-12-10 | Reflecting substrate of reflective type liquid crystal display devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20000038905A KR20000038905A (en) | 2000-07-05 |
| KR100565736B1 true KR100565736B1 (en) | 2006-05-25 |
Family
ID=19562120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980054072A Expired - Lifetime KR100565736B1 (en) | 1998-12-10 | 1998-12-10 | Reflecting substrate of reflective type liquid crystal display devices |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100565736B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1264059C (en) * | 2001-01-25 | 2006-07-12 | 松下电器产业株式会社 | Liquid crystal display |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58159516A (en) * | 1982-03-18 | 1983-09-21 | Seiko Epson Corp | lcd display panel |
| JPS60158421A (en) * | 1984-01-28 | 1985-08-19 | Seiko Instr & Electronics Ltd | Matrix liquid crystal display device |
| KR960015020A (en) * | 1994-10-19 | 1996-05-22 | 이데이 노부유키 | Display |
| KR970048852A (en) * | 1995-12-30 | 1997-07-29 | 김광호 | A liquid crystal display device having a light blocking film formed in the thin film transistor channel portion and a method of manufacturing the same |
| KR19980026561A (en) * | 1996-10-10 | 1998-07-15 | 구자홍 | LCD and its manufacturing method |
-
1998
- 1998-12-10 KR KR1019980054072A patent/KR100565736B1/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58159516A (en) * | 1982-03-18 | 1983-09-21 | Seiko Epson Corp | lcd display panel |
| JPS60158421A (en) * | 1984-01-28 | 1985-08-19 | Seiko Instr & Electronics Ltd | Matrix liquid crystal display device |
| KR960015020A (en) * | 1994-10-19 | 1996-05-22 | 이데이 노부유키 | Display |
| KR970048852A (en) * | 1995-12-30 | 1997-07-29 | 김광호 | A liquid crystal display device having a light blocking film formed in the thin film transistor channel portion and a method of manufacturing the same |
| KR19980026561A (en) * | 1996-10-10 | 1998-07-15 | 구자홍 | LCD and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000038905A (en) | 2000-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0175225B1 (en) | Reflection type liquid crystal display device and its manufacturing method | |
| US8054424B2 (en) | Transflective liquid crystal display device and manufacturing method thereof | |
| CN100523925C (en) | In-plane-switching-mode liquid crystal display device | |
| JP2004302465A (en) | Liquid crystal display device and method of manufacturing the same | |
| JPH0675237A (en) | Reflection-type liquid crystal display device | |
| US6867822B2 (en) | Reflective and transflective liquid crystal display device and its manufacturing method | |
| JP2007212969A (en) | REFLECTOR, LIQUID CRYSTAL DISPLAY DEVICE PROVIDED WITH THE REFLECTOR AND MANUFACTURING METHOD THEREOF | |
| KR100408346B1 (en) | method for fabricating a Transflective liquid crystal display device and the same | |
| KR20080067406A (en) | Thin film transistor array panel | |
| KR20030057227A (en) | method for fabricating a Transflective liquid crystal display device | |
| JP2000258802A (en) | Active matrix type liquid crystal display device and manufacture therefor | |
| KR100656696B1 (en) | Reflective Liquid Crystal Display | |
| KR100421901B1 (en) | Reflecting substrate of reflective type liquid crystal display devices | |
| JP4017499B2 (en) | Liquid crystal display | |
| KR100290922B1 (en) | Reflective-type liquid crystal display device and method of manufacturing thereof | |
| KR100565736B1 (en) | Reflecting substrate of reflective type liquid crystal display devices | |
| KR100775393B1 (en) | Semi-transmissive liquid crystal display device and manufacturing method thereof | |
| KR100268010B1 (en) | Reflector of reflective-type liquid crystal display device and method of making the same | |
| KR101612050B1 (en) | Transflective type liquid crystal display device and methode of fabricating the same | |
| JP3193906B2 (en) | Method for manufacturing reflective liquid crystal display device | |
| KR100195266B1 (en) | Reflective type liquid crystal display device | |
| KR100692689B1 (en) | Transflective Liquid Crystal Display | |
| KR20110030209A (en) | Reflective type liquid crystal display device | |
| KR20110029282A (en) | Thin-film transistor substrate of transflective liquid crystal display device and manufacturing method thereof | |
| KR101102034B1 (en) | Semi-transmissive thin film transistor array substrate and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19981210 |
|
| AMND | Amendment | ||
| N231 | Notification of change of applicant | ||
| PN2301 | Change of applicant |
Patent event date: 19990906 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20030918 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19981210 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20050727 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20051209 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20050727 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
|
| AMND | Amendment | ||
| J201 | Request for trial against refusal decision | ||
| PJ0201 | Trial against decision of rejection |
Patent event date: 20060105 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20051209 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20060210 Appeal identifier: 2006101000071 Request date: 20060105 |
|
| PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20060105 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20060105 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 19981219 Patent event code: PB09011R02I |
|
| B701 | Decision to grant | ||
| PB0701 | Decision of registration after re-examination before a trial |
Patent event date: 20060210 Comment text: Decision to Grant Registration Patent event code: PB07012S01D Patent event date: 20060207 Comment text: Transfer of Trial File for Re-examination before a Trial Patent event code: PB07011S01I |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20060322 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20060323 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20090102 Start annual number: 4 End annual number: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20091218 Start annual number: 5 End annual number: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20101228 Start annual number: 6 End annual number: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20111221 Start annual number: 7 End annual number: 7 |
|
| FPAY | Annual fee payment |
Payment date: 20121228 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20121228 Start annual number: 8 End annual number: 8 |
|
| FPAY | Annual fee payment |
Payment date: 20131227 Year of fee payment: 9 |
|
| PR1001 | Payment of annual fee |
Payment date: 20131227 Start annual number: 9 End annual number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20150227 Year of fee payment: 10 |
|
| PR1001 | Payment of annual fee |
Payment date: 20150227 Start annual number: 10 End annual number: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20160226 Year of fee payment: 11 |
|
| PR1001 | Payment of annual fee |
Payment date: 20160226 Start annual number: 11 End annual number: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20180213 Year of fee payment: 13 |
|
| PR1001 | Payment of annual fee |
Payment date: 20180213 Start annual number: 13 End annual number: 13 |
|
| EXPY | Expiration of term | ||
| PC1801 | Expiration of term |
Termination date: 20190610 Termination category: Expiration of duration |