KR100559992B1 - Chemical solution for removing aluminum for bonding pad inspection of semiconductor devices - Google Patents
Chemical solution for removing aluminum for bonding pad inspection of semiconductor devices Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 52
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000000126 substance Substances 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000007689 inspection Methods 0.000 title claims abstract description 6
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims 2
- 239000000356 contaminant Substances 0.000 abstract description 11
- 238000007654 immersion Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 10
- 239000010410 layer Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05551—Shape comprising apertures or cavities
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05563—Only on parts of the surface of the internal layer
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Abstract
본 발명은 반도체 소자의 검사에 사용되는 화학용액에 관한 것이다.The present invention relates to a chemical solution used for the inspection of semiconductor devices.
본 발명의 반도체 소자의 본딩 패드 검사를 위한 알루미늄 제거용 화학용액은 H3PO4:HNO3:CH3COOH:HO(CH2)2OH로 이루어짐에 기술적 특징이 있다.The chemical solution for removing aluminum for bonding pad inspection of the semiconductor device of the present invention has a technical feature in that it consists of H 3 PO 4 : HNO 3 : CH 3 COOH: HO (CH 2 ) 2 OH.
따라서, 본 발명의 반도체 소자의 본딩 패드 검사를 위한 알루미늄 제거용 화학용액은 본딩 패드 알루미늄 상에 존재하는 오염물질의 표면과 형태는 변화시키지 않으면서 패드 알루미늄만을 선택적으로 제거함으로써 오염물질이나 이로 인해 제거되지 않고 남은 패드 알루미늄을 관찰하여 패드 알루미늄 위의 이물질 존재 여부와 이들의 형태를 신속하게 감지할 수 있도록 하는 효과가 있다.Accordingly, the aluminum removal chemical solution for inspecting the bonding pad of the semiconductor device of the present invention can be removed by selectively removing only the pad aluminum without changing the surface and shape of the contaminant present on the bonding pad aluminum. By observing the remaining pad aluminum, it is possible to quickly detect the presence and presence of foreign substances on the pad aluminum.
본딩 패드, 알루미늄, 화학용액, 침지 Bonding Pad, Aluminum, Chemical Solution, Immersion
Description
도 1은 반도체 소자의 본딩 패드 부분에 대한 단면도.1 is a cross-sectional view of a bonding pad portion of a semiconductor device.
도 2는 반도체 소자의 본딩 패드 상에 이물질이 존재하고 있는 상태를 도시한 단면도.2 is a cross-sectional view showing a state in which foreign matter exists on a bonding pad of a semiconductor device.
도 3은 본 발명의 일 실시 예에 따른 결과를 도시한 단면도.Figure 3 is a cross-sectional view showing the result according to an embodiment of the present invention.
도 4는 본 발명의 일 실시 예에 따른 전자현미경 사진.4 is an electron micrograph according to an embodiment of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1: 반도체 기판 2: 층간 절연막1: semiconductor substrate 2: interlayer insulating film
3: 배리어 금속막 4:알루미늄 층3: barrier metal film 4: aluminum layer
5: 반사방지 금속막 6: 패시베이션막5: antireflection metal film 6: passivation film
7: 본딩 패드7: bonding pad
본 발명은 반도체 소자의 본딩 패드 검사를 위한 알루미늄 제거용 화학용액에 관한 것으로, 보다 자세하게는 반도체 소자의 본딩 패드 상에 이물질이 존재하고 있는지 여부를 검사하는데 사용되는 알루미늄 제거용 화학용액에 관한 것이다.The present invention relates to a chemical solution for removing aluminum for inspecting a bonding pad of a semiconductor device, and more particularly, to a chemical solution for removing aluminum used to inspect whether a foreign substance is present on a bonding pad of a semiconductor device.
일반적으로, 알루미늄은 반도체 장치에서 금속배선으로 주로 사용되고 있다. 다층 구조로 이루어진 최근의 반도체 소자에서는 금속배선이 소자와 소자사이 또는 소자와 외부 회로와의 연결 역할을 하고 있는데, 특히 외부와 연결되는 금속배선 부분을 본딩 패드(bonding pad)라 칭한다. 더욱 자세히 설명하면, 반도체 칩의 내부 회로와 외부의 회로는 금속 와이어(wire)로 연결되는데 이때 반도체 칩 위의 접착(bonding) 부위에 알루미늄(Al) 등의 금속 증착 피막을 입힌다. 이 접착 부위를 본딩 패드라고 하며 사각형의 구조를 갖는다. 본딩 패드가 형성된 후에 금속 와이어로 본딩 패드를 리드프레임(lead frame)과 같은 외부 리드(lead)에 본딩하고, 이를 패키징(packaging)함으로써 반도체 장치가 완성된다. In general, aluminum is mainly used as metal wiring in semiconductor devices. In a recent semiconductor device having a multi-layered structure, metal wiring plays a role of connecting the device and the device or the device and the external circuit. In particular, the metal wiring part connected to the outside is called a bonding pad. In more detail, the internal circuit and the external circuit of the semiconductor chip are connected by a metal wire, and a metal deposition film such as aluminum (Al) is coated on the bonding portion on the semiconductor chip. This bonding site is called a bonding pad and has a rectangular structure. After the bonding pad is formed, the semiconductor device is completed by bonding the bonding pad to an external lead such as a lead frame with a metal wire and packaging the same.
도 1은 일반적인 반도체 소자의 본딩 패드 부분에 대한 단면도를 도시한 것이다. 도 1에 도시된 바와 같이, 반도체 기판(1) 위에 층간 절연막(2), 배리어 금속막(3), 알루미늄 층(4), 반사방지 금속막(5) 및 패시베이션막(6)이 적층돼 있다. 여기에서 패시베이션막(passivation layer)의 개구 부분에 노출된 알루미늄 층이 본딩 패드(7)가 되며 주로 패시베이션막 위에 형성된 포토레지스트막(photo-resist layer)을 마스크로 하여 패시베이션막을 선택적으로 식각함으로써 만들어진다. 1 is a cross-sectional view of a bonding pad portion of a general semiconductor device. As shown in FIG. 1, an interlayer insulating film 2, a
이러한 본딩 패드에서는 알루미늄의 표면이 노출된 상태에서 외부와의 접촉이 이루어지는데, 이 노출된 알루미늄 표면(이후 "패드 알루미늄"이라 칭한다)에 오염 물질이 존재할 경우, 저항의 증가 또는 신뢰성 저하로 인해 불량이 발생하게 된다. 따라서 패드 알루미늄 상의 오염물질을 신속하게 감지해야 할 필요성이 높아지고 있는 가운데 이들 오염물질의 존재 여부의 검사에 대한 관심이 증대되고 있다.Such bonding pads make contact with the outside while the surface of aluminum is exposed. If contaminants are present on the exposed aluminum surface (hereinafter referred to as "pad aluminum"), it is defective due to an increase in resistance or a decrease in reliability. This will occur. Accordingly, there is a growing need to detect contaminants on pad aluminum quickly, and there is increasing interest in the inspection of the presence of these contaminants.
일반적으로 반도체 소자의 패드 알루미늄 위의 오염물질을 검사하기 위해서는 평면 시편 또는 단면 시편을 제작한 후 제작된 시편을 전자현미경 또는 물성분석기로 관찰하게 되는데 여기에는 많은 시간이 소요된다. 하지만 이와 같은 분석에 있어서는 미지의 오염물질의 존재 여부를 밝혀내고 만약 오염물질이 존재한다면 그것이 어느 위치에 있는지를 신속하게 감지하는 것이 중요하다.In general, in order to inspect the contaminants on the pad aluminum of the semiconductor device, after fabricating a planar specimen or a cross-section specimen, the prepared specimen is observed with an electron microscope or a physical property analyzer, which takes a lot of time. However, in such an analysis, it is important to identify the presence of an unknown contaminant and to quickly detect where it is located if it is present.
따라서 이러한 목적을 위해 종래에는 분석하고자 하는 시편을 알루미늄 제거용 화학용액 내에 단시간 침지하여 패드 알루미늄만을 선택적으로 제거함으로써, 제거되지 않은 오염물질이나 이 같은 오염물질로 인해 제거되지 않고 남아 있는 패드 알루미늄의 모양을 관찰하여 이물질의 형태를 감지하는 방법이 사용되었다.Therefore, for this purpose, by conventionally immersing the specimen to be analyzed in the aluminum removal chemical solution for a short time to selectively remove only the pad aluminum, the shape of the pad aluminum remains unremoved due to uncontaminated contaminants or such contaminants Observation of the shape of the foreign body was used.
이 같은 종래의 검사 방법에서 시편의 패드 알루미늄 제거용 화학용액으로는 HCl(염산), HNO3(질산), H3PO4(인산) 등이 이용되었는데 이들 화학용액을 각각 또는 혼합해서 약 70℃로 가열하여 사용하였다. 하지만 시편을 이들 화학용액 속에 아무리 짧은 시간 동안 침지시킨다 하더라도 이들 화학용액은 분석하고자 하는 본딩 패드 위의 오염물질까지 동시에 제거하는 경향이 있어 패드 알루미늄 위의 이물질 감지를 어렵게 만들고 분석에 혼란을 유발하는 문제점이 있었다.In this conventional test method, HCl (hydrochloric acid), HNO 3 (nitric acid), H 3 PO 4 (phosphoric acid), and the like were used as chemical solutions for removing the pad aluminum of the specimen. Heated to and used. However, no matter how short the samples are immersed in these chemicals, these chemicals tend to remove contaminants on the bonding pads to be analyzed at the same time, making it difficult to detect foreign substances on the pad aluminum and causing confusion in the analysis. There was this.
따라서, 본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 시편을 화학용액 속에 침지시켜 패드 알루미늄 상에 존재하는 오염물질의 표면과 형태는 변화시키지 않으면서 패드 알루미늄만을 선택적으로 제거함으로써 오염물질이나 이로 인해 제거되지 않고 남은 패드 알루미늄을 관찰하여 패드 알루미늄 상의 이물질의 존재 여부와 이들의 형태를 신속하게 감지할 수 있도록 하는 알루미늄 제거용 화학용액을 제공함에 본 발명이 목적이 있다.
Accordingly, the present invention is to solve the above problems of the prior art, by immersing the specimen in a chemical solution to contaminate by selectively removing only the pad aluminum without changing the surface and shape of the contaminants present on the pad aluminum An object of the present invention is to provide a chemical solution for removing aluminum to observe the presence or absence of foreign matter on the pad aluminum by observing the material or the pad aluminum remaining without being removed thereby.
본 발명의 상기 목적은 H3PO4(인산):HNO3(질산):CH3COOH(초산):HO(CH2)2OH(에틸렌글리콜)로 이루어진 반도체 소자의 패드 알루미늄 제거용 화학용액에 의해 달성된다. The above object of the present invention is a chemical solution for removing the pad aluminum of a semiconductor device consisting of H 3 PO 4 (phosphate): HNO 3 (nitric acid): CH 3 COOH (acetic acid): HO (CH 2 ) 2 OH (ethylene glycol). Is achieved.
본 발명의 상기 화학용액의 구성비는 바람직하게는 [1.1 H3PO4 + 1 HNO3 + 0.1 CH3COOH + 0.2 HO(CH2)2OH]으로 구성될 수 있다. 일 예로서, 만약 0.55몰의 H3PO4가 혼합된 혼합물을 사용한다면, 패드 알루미늄 제거용 화학용액의 조성은 [0.55 H3PO4 + 0.5 HNO3 + 0.05 CH3COOH + 0.1 HO(CH2)2OH]가 된다. 또한 2.2몰의 H3PO4가 혼합된 혼합물을 사용하는 경우, 패드 알루미늄 제거용 화학용액의 조성은 [2.2 H3PO4 + 2 HNO3 + 0.2 CH3COOH + 0.4 HO(CH2)2OH]가 된다.The composition ratio of the chemical solution of the present invention may be preferably composed of [1.1 H 3 PO 4 + 1 HNO 3 + 0.1 CH 3 COOH + 0.2 HO (CH 2 ) 2 OH]. As an example, if 0.55 mol of H 3 PO 4 is mixed, the composition of the pad aluminum removal chemical solution is [0.55 H 3 PO 4 + 0.5 HNO 3 + 0.05 CH 3 COOH + 0.1 HO (CH 2). ) 2 OH]. In addition, when using a mixture of 2.2 mol H 3 PO 4 , the composition of the chemical solution for removing the pad aluminum is [2.2 H 3 PO 4 + 2 HNO 3 + 0.2 CH 3 COOH + 0.4 HO (CH 2 ) 2 OH ].
일반적으로 인산과 질산을 포함하는 에칭액에 있어서 질산은 금속표면을 산화시키는 산화제로써 작용하고 인산은 금속 표면을 용해시키는 산으로써 작용하는 것으로 알려져 있다. 또한 에칭액 속에 포함된 초산은 에칭액의 습윤성을 개선하고 에칭 속도의 조절에 기여하는 희석제로서의 역할을 하며, 에틸렌글리콜은 물질의 표면에 얇은 보호막을 형성하여 그 물질이 식각되는 것을 방지해 준다.In general, in an etching solution containing phosphoric acid and nitric acid, it is known that silver nitrate acts as an oxidizing agent to oxidize the metal surface and phosphoric acid acts as an acid to dissolve the metal surface. In addition, acetic acid contained in the etchant serves as a diluent to improve the wettability of the etchant and contribute to the control of the etching rate, and ethylene glycol forms a thin protective film on the surface of the material to prevent the material from being etched.
본 발명의 일 실시 예로서, 분석하고자 하는 시편을 상기 화학용액 속에 상온에서 10분간 침지시키면, 패드 알루미늄이 제거됨과 동시에 상기 화학용액 구성 성분 중 에틸렌글리콜이 패드 알루미늄 상에 존재하는 산화막 혹은 다른 이물질의 표면에 얇은 보호막을 형성함으로써 이들 이물질이 제거되는 것을 방지해 줄뿐만 아니라 이물질 아래쪽의 알루미늄이 식각되어 변화되는 것을 막아 준다.As an embodiment of the present invention, when the specimen to be analyzed is immersed in the chemical solution for 10 minutes at room temperature, the pad aluminum is removed and at the same time the ethylene glycol of the chemical solution constituents of the oxide film or other foreign matter present on the pad aluminum. The formation of a thin protective film on the surface prevents the removal of these debris and prevents the aluminum under the debris from being etched and changed.
본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용효과에 관한 상세한 사항은 본 발명의 바람직한 실시 예를 도시하고 있는 도면을 참조한 이하 상세한 설명에 의해 보다 명확하게 이해될 것이다.Details of the above object and technical configuration and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.
도 2내지 도 3은 본 발명의 상기 화학용액을 사용한 일 실시 예를 설명하기 위해 제시된 단면도이다.2 to 3 are cross-sectional views provided for explaining an embodiment using the chemical solution of the present invention.
도 2는 패드 알루미늄이 제거되기 전의 상태를 도시한 것이다. 좌우의 패시베이션막(6) 사이에 패드 알루미늄(7)이 위치해 있고 이 패드 알루미늄 위에 산화막 혹은 다른 이물질(8)이 존재하고 있음을 보여주고 있다. 2 shows the state before the pad aluminum is removed. The
도 3은 본 발명의 상기 화학용액을 사용하여 패드 알루미늄을 제거한 후 이물질(8)과 이물질 하부의 알루미늄(7)이 남아있는 상태를 도시한 것이다. 본 발명의 상기 화학용액 속에 시편을 상온에서 10분간 침지시키면 상기 화학용액이 패드 알루미늄을 제거하는 동시에 상기 화학용액의 구성 성분인 에틸렌글리콜이 패드 알루미늄 상의 이물질에 보호막을 형성하여 이들 이물질의 표면과 형태가 변화되는 것을 방지함으로써 이물질의 정확한 형성형태와 정도의 분석이 가능하게 된다.3 illustrates a state in which the
도 4는 본 발명의 상기 화학용액에 침지시켰던 시편에 대한 전자현미경 사진으로, 패드 알루미늄 상에 존재하는 오염물질들을 확인할 수가 있다.Figure 4 is an electron micrograph of the specimen immersed in the chemical solution of the present invention, it is possible to identify the contaminants present on the pad aluminum.
따라서, 본 발명의 반도체 소자의 본딩 패드 검사를 위한 알루미늄 제거용 화학용액은 패드 알루미늄 상의 이물질 표면에 얇은 보호막을 형성해 이들 이물질은 손상시키지 않으면서 패드 알루미늄만을 제거하여 패드 알루미늄 상에 존재하는 이물질의 표면과 형태가 변화되는 것을 방지함으로써 보다 정확한 이물질의 형성형태와 정도의 분석을 가능하게 하는 효과가 있으며, 또한 상기 화학용액을 실온에서 사용함으로써 위험성을 줄일 수 있다는 장점이 있다.
Therefore, the aluminum removal chemical solution for the bonding pad inspection of the semiconductor device of the present invention forms a thin protective film on the surface of the foreign matter on the pad aluminum to remove only the pad aluminum without damaging the foreign matter so that the surface of the foreign material present on the pad aluminum. By preventing the change of the form and form, there is an effect to enable more accurate analysis of the form and degree of formation of foreign matter, and also has the advantage of reducing the risk by using the chemical solution at room temperature.
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