KR100526469B1 - Apparatus and method for preprocessing a semiconductor wafer before the polishing operation - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer polishing pretreatment apparatus and method. The components that can be removed and the components that can physically remove the remaining particles attached to the wafer by spraying a high pressure solution onto the wafer to be polished can be efficiently connected and arranged. In the situation before the full polishing process, most of the particles attached to the wafer can be removed, so that the damage of the wafer due to the adverse effects of the particles can be prevented even before the physical pressure caused by the full polishing process. Can be induced.

According to the practice of the present invention, in the situation before the full polishing process, when the particles adhered to the wafer are previously removed, in the aftermath, contamination of the polishing apparatus (eg, the polishing pad) due to unnecessary transition of the particles may also be blocked in advance. As a result, unexpected mass damage of the wafer can naturally be minimized.

Description

Apparatus and method for preprocessing a semiconductor wafer before the polishing operation}

The present invention relates to an apparatus for pretreatment of a semiconductor wafer prior to the polishing process of the semiconductor wafer. More specifically, the present invention relates to an apparatus for pretreatment of a semiconductor wafer. Components that can physically and chemically remove particles, and "components that can physically remove residual particles attached to the wafer by spraying a high-pressure solution onto the wafer to be polished." In this case, the particles attached to the wafer can be removed most of the particles before the full polishing process proceeds, so that the particles are not affected by the adverse effects of the particles even under the physical pressure caused by the full polishing process. Polishing semiconductor wafers that can induce damage to the wafers in advance It relates to a pretreatment device. Furthermore, the present invention relates to a semiconductor wafer polishing pretreatment method using such a semiconductor wafer polishing pretreatment apparatus.

In recent years, as the size of semiconductor chips decreases and the number of layers of wiring layers increases, surface irregularities of semiconductor wafers become a serious problem. Accordingly, the surface bending phenomenon of the wafer is conventionally used by using a chemical mechanical polishing apparatus (CMP: hereinafter referred to as a "CMP apparatus") having both chemical means such as an abrasive and mechanical means such as a polishing head. Much effort is being taken to eliminate the problem.

The structure, function, and the like of such a conventional polishing apparatus are described, for example, in U.S. Patent No. 5542874 "Wafer polishing apparatus", U.S. Patent No. 5649855 "Wafer polishing device", U.S. Patent Publication 5702291 "Wafer polishing method and wafer polishing apparatus, US Patent No. 5733177" Process of polishing wafers ", US Patent No. 5803799" Wafer polishing head Wafer polishing head) "and the like.

Such a conventional CMP apparatus has, for example, a combination of a cross axis, wafer handlers, polishing pads, and the like, in which the wafer handler handles a wafer to be processed. In this state, after physically contacting the polishing pad disposed at its bottom, the surface curvature of the wafer to be processed can be naturally removed by linking and rotating at a high speed in accordance with the rotational speed of the polishing pad.

Under this conventional CMP operating system, as mentioned above, the wafer being processed by the wafer handler is subject to its surface curvature by co-rotation with the polishing pad, in this case the wafer and the polishing pad. Very strong physical forces are naturally applied to the interface between them.

At this time, if the surface of the wafer maintains a clean state of a predetermined level or more, the wafer is subjected to the normal surface bending removal procedure without any damage.

However, if a separate defect causing element, such as a particle, is present on the surface of the wafer and a series of polishing processes are performed without any action for removing the particle, the particle is bounded between the wafer and the polishing pad. It randomly flows by physical forces acting on the surface, which unnecessarily exerts an adverse effect on the surface of the wafer, such as, for example, "creating scratches," and eventually the finished semiconductor device is unavoidably constant. You have no choice but to maintain substandard quality.

Of course, if all the process environment is completely clean and the particle generation itself is cut off at the source, this problem can be prevented in advance. It may be almost impossible, and finally, unless a separate action is taken, conventionally, the problem of wafer damage caused by particles is left as it is in the polishing process.

At this time, the particles that existed on the surface of the wafer do not remain only on the surface of the wafer, and as the process progresses, for example, the surface of the polishing pad is also transferred to the surface of the polishing pad. If the polishing process is still intact, the particles will not only adversely affect the first wafer, but will also have a continuous adverse effect on other wafers that are subsequently introduced, and eventually, overall wafer damage. There is no choice but to take seriously the serious problem of large scale.

Accordingly, an object of the present invention is "a component that can first physically and chemically remove particles attached to the wafer by applying a series of megasonic waves after immersing the wafer to be polished in a cleaning material." By spraying a high-pressure solution onto the wafer to be processed, the components that can physically remove the remaining particles attached to the wafer can be efficiently linked and arranged, so that in a situation before the full grinding process is performed, In order to remove most of the particles attached to the wafer, even in the case of physical pressure caused by the progress of a full polishing process, damage to the wafer due to the adverse effects of the particles can be induced in advance.

Another object of the present invention is to predict the removal of particles adhering to the wafer in a situation prior to a full polishing process, thereby preventing contamination of the polishing apparatus (e.g., polishing pad) due to unnecessary transition of the particles in advance. In addition to minimizing mass damage of unsuccessful wafers, the quality of the final semiconductor device is improved to a certain level or more.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

In order to achieve the above object, in the present invention, the cleaning tank containing a series of cleaning materials and the wafer to be polished are selectively raised, lowered or self-rotated, and the wafer is controlled by external control. A wafer handler which is immersed in the cleaning material inside the cleaning tank to induce the removal of particles attached to the wafer, and is installed to be movable around the cleaning tank. While rotating the wafer to form a series of signal connections with the wafer handler and the injector, which injects a series of fluids to the wafer to remove particles attached to the wafer, the wafer handler and the injector, and selectively operates the wafer handler and the injector. To develop a semiconductor wafer polishing pretreatment device consisting of a combination of individual computer controlled wafer pretreatment controllers The.

Hereinafter, a semiconductor wafer polishing pretreatment apparatus and method according to the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIG. 1, the semiconductor wafer polishing pretreatment apparatus 100 according to the present invention is largely divided into a wafer loading stage 101, a cleaning tank 102 arranged in association with the wafer loading stage 101, and a wafer handler. 109, the injector 106, the wafer pretreatment controller 120, and the like take a combined configuration. In this case, an open window W for opening the cleaning tank 102 is disposed in the stage 101.

At this time, the cleaning tank 102 takes a cylindrical shape so that a series of storage spaces can be defined, and in this situation, a series of cleanings for removing particles attached to, for example, the wafer 1 inside its storage space. Receive substance (C).

In this case, as the cleaning material (C), for example, a mixed solution of a low weight organic compound, a base such as ammonia for removing common metals and light metals, hydrogen peroxide water, ultrapure water, etc. may be used, and heavy metals, metal hydroxides, etc. may be removed. A mixed solution of hydrochloric acid, hydrogen peroxide solution, ultrapure water, or the like may be used. In addition, as the cleaning material (C), a mixed solution of sulfuric acid and hydrogen peroxide or ozone for removing heavy organic substances such as a photosensitizer may be used, and an aqueous solution of phosphoric acid for removing nitride or the like may be used, or a silicon or silicon compound. , Hydrofluoric acid or hydrofluoric acid aqueous solution for removing oxides or the like may be used. The cleaning temperature is adjusted between 10 degrees and 200 degrees in consideration of processing speed and uniformity.

At this time, as another example of the cleaning material (C), simply, "DI water for weakening the contact force of particles" and the like may be selectively accommodated according to the process needs.

Here, the wafer handler 109 takes a procedure of loading or unloading the stage 101 while handling the wafer 1 before the polishing process is input, that is, the wafer 1 to be polished. In the step of selectively raising and lowering or self-rotating, and later, when the external control signal is transmitted, the wafer 1 is immersed in the cleaning material (C) inside the above-described cleaning tank 102, A procedure of inducing removal of particles attached to the wafer 1 is performed.

At this time, the wafer handler driving unit 114 collects and receives various kinds of computational commands output from the wafer preprocessing controller 120 in a state where the wafer preprocessing controller 120 and the wafer handler 109 which are described later are computed and mediated. After that, the received command is transferred to the wafer handler 109 so that the wafer handler 109 is systematically linked according to the control schedule of the wafer preprocessing controller 120 (that is, according to the operation status of other components). It acts as a guide to be driven. In this case, the wafer handler driving unit 114 may be built in the wafer handler 109 depending on the situation, or may be installed independently of the wafer handler 109.

On the other hand, the injector 106 is configured to be movable around the cleaning tank 102, and under the control of the wafer pretreatment controller 120, in the state where the wafer handler 109 is elevated upwards, the cleaning tank is Rotating around 102, a series of fluids are sprayed onto the wafer 1 to proceed to remove particles adhering to the wafer 1. In this case, as the fluid, for example, a liquid gas such as an aqueous solution or liquefied nitrogen containing one or more dilute acids (or strong acidic substances) or basic substances in ultrapure water may be used. Therefore, in the case of a liquefied gas, it is carried out between 50 degrees-90 degrees below zero, and in the case of aqueous solution, between 10 degrees-90 degrees.

At this time, when injecting the liquefied gas, the injector may be further added to the liquefied gas supply means having a flow rate adjusting means.

Here, a guide rail 108 for guiding the stable rotation of the injector 106 is further disposed on the stage 101 corresponding to the rotation path of the injector 106, and a part of the injector 106 is provided with a wafer 1. A spray gun (107: Spray gun) for concentrating and spraying to the side) is added and mounted.

At this time, the injector drive unit 115 collects and receives various types of computation commands output from the wafer preprocessing controller 120 in real time while computing and mediating the wafer preprocessing controller 120 and the injector 106, and then receives them. By delivering the completed command to the injector 106 side, the injector 106 is guided so that the injector 106 can be systematically linked and driven according to the control schedule of the wafer preprocessing controller 120 (ie, depending on the operation status of other components). Play a role. In this case, the injector drive unit 115 may be built in the injector 106 or may be independently installed or installed outside the injector 106, depending on the situation.

Within this infrastructure, as shown in FIG. 2, the wafer preprocessing controller 120 is largely divided into a wafer preprocessing controller 121, a wafer handler managing unit 123, an injector managing unit 122, a data storage unit 126, and the like. This combined configuration is taken. In this case, the wafer pretreatment control unit 121 is electrically connected to the main controller 2 which integrates and controls the entire facility via the interface unit 127.

At this time, the wafer preprocessing control unit 121 communicates with the main controller 2, for example, "computation command for controlling the loading / unloading state of the wafer handler 109", "w / w of the wafer handler 109". Select and generate a command for controlling the falling state, a command for controlling the self-rotation state of the wafer handler 109, a command for controlling the wafer handling state of the wafer handler 109, and the like. By transferring each completed command to the wafer handler management unit 123, a procedure of inducing the wafer handler 109 to be driven systematically according to the computation schedule of the main controller 2 is performed. In this case, the wafer handler managing unit 123 communicates with the wafer handler driving unit 114 in real time under the computerized control of the wafer preprocessing control unit 121, so that the control command of the wafer preprocessing control unit 121 is controlled by the operation of the wafer handler 109. Induce to be reflected in real time.

The wafer pretreatment control unit 121 also communicates with the main controller 2, for example, "a command for controlling the rotational state (rotational speed, rotational direction, etc.) of the injector 106", "fluid of the injector 106". By selecting and generating the "command for controlling the injection state (injection amount, injection timing, injection speed, etc.), etc., and transmitting each generated command to the injector management part 122 side, the injector 106 makes the main controller 2 In accordance with the computerization schedule of the system, the procedure to induce the system to be driven systematically. In this case, the injector managing unit 122 communicates with the injector driving unit 115 in real time under the computerized control of the wafer preprocessing control unit 121 so that the control command of the wafer preprocessing control unit 121 is reflected in the operation of the injector 106 in real time. Induce to help.

In addition, the data storage unit 126 may include, for example, “base program data for supporting the base operation of the wafer preprocessing control unit 121, data containing the operation history of the wafer handler 109, and operation history of the injector 106. It stores and manages the data, the data containing the cleaning material storage state of the cleaning tank 102, etc., and assists a series of wafer pretreatment procedures by the wafer pretreatment control unit 121 to proceed smoothly without any problems. Do this.

Meanwhile, as shown in FIG. 1, a part of the cleaning tank 102 containing the cleaning material C may include additional auxiliary components for effectively reinforcing a series of polishing pretreatment processes according to the present invention. The diaphragm 103, the heater 104, the temperature sensor 105, etc. are further arrange | positioned. In this case, the ultrasonic generator 103 is preferably used as the diaphragm 103.

At this time, the diaphragm 103 is selectively mounted on a part of the cleaning tank 102, for example, on the outer wall of the cleaning tank 102, and under the computerized control of the wafer pretreatment controller 121, thereby selectively cleaning the cleaning tank 102. Induces a series of vibration waves to be transmitted to the inside of). In this case, the cleaning material C accommodated in the storage space of the cleaning tank 102 may vibrate under the influence of the vibration wave transmitted from the diaphragm 103 to naturally form a series of megasonic waves. In the end, depending on the process situation, the wafer 1 that is selectively immersed in the cleaning material (C) is more effectively removed from particles buried in it by the wide chemical / physical interlocking action of the cleaning material (C). This can be easily obtained.

Here, after the diaphragm drive unit 112 computes and mediates between the wafer pretreatment controller 120 and the diaphragm 103, the diaphragm driver 112 collects and receives various kinds of computation commands output from the wafer preprocess controller 120 in real time. By transmitting the received command to the diaphragm 103 side, the diaphragm 103 serves to guide and systematically link and drive according to the control schedule of the wafer preprocessing controller 120. In this case, the diaphragm drive part 112 may be built in the washing tank 102 depending on a situation, and may be independent and provided in the washing tank 102 exterior.

In addition, the temperature sensor 105 is continuously mounted in real time under the computerized control of the wafer pretreatment controller 120 while being mounted on another part of the cleaning tank 102, for example, the inner wall of the cleaning tank 102. The temperature inside the bath 102, for example, the cleaning material temperature inside the cleaning tank 102, serves to guide the wafer pretreatment controller 120 in real time.

At this time, the wafer pretreatment controller 120 determines the temperature of the cleaning material C accommodated in the cleaning tank 102 through the sensing signal output from the temperature sensor 105, and then, if the cleaning material C If it is determined that the temperature is too lower than the preset reference temperature, another part of the washing tank 102, for example, the heater 104 mounted on the outer wall of the washing tank 102 is controlled to generate the heater 102. By doing so, the procedure of inducing the cleaning material temperature inside the cleaning tank 102 to be rapidly heated to a level suitable for the process proceeds.

Here, the heater driver 113 collects and receives various kinds of computer commands output from the wafer preprocessing controller 120 in real time while computing and mediating between the wafer preprocessing controller 120 and the heater 104. By transmitting the received command to the heater 104 side, the heater 104 serves to guide the system 104 to be systematically linked and driven according to the control schedule of the wafer preprocessing controller 120. In this case, the heater drive part 113 may be built in the washing tank 102 depending on a situation, and may be independent and provided in the washing tank 102 exterior.

On the other hand, as shown in Figure 2, inside the wafer preprocessing controller 120, in accordance with the installation of the diaphragm driver 112, the temperature sensor 105, the heater driver 113, etc., the diaphragm management unit 124, sensing The signal manager 125, the heater manager 129, and the like are additionally arranged. In this case, the sensing signal manager 125 communicates with the temperature sensor 105 in real time under the computerized control of the wafer pretreatment controller 121, whereby the wafer pretreatment controller 121 cleans the cleaning material C inside the cleaning tank 102. It plays a role of inducing quick and accurate temperature grasp.

At this time, the wafer pretreatment control unit 121 selects and generates, for example, a "command for controlling the vibration state (the number of vibrations, the vibration timing, etc.) of the vibration plate 103" under communication with the main controller 2. By transmitting a command to the diaphragm manager 112, the diaphragm 103 is guided so that the diaphragm 103 can be driven systematically according to the computation schedule of the main controller 2. In this case, the diaphragm managing unit 124 communicates with the diaphragm driving unit 112 in real time under the computerized control of the wafer preprocessing control unit 121 so that the control command of the wafer preprocessing control unit 121 is reflected in the operation of the diaphragm 103 in real time. Induce to help.

In addition, the wafer preprocessing control unit 121 selects and generates, for example, "a command for controlling the heating state (heating temperature, heat generation time, etc.) of the heater 104" under communication with the main controller 2, and is generated. By transmitting a command to the heater management unit 124, a procedure of inducing the heater 104 to be systematically driven according to the computation schedule of the main controller 2 is performed. In this case, the heater manager 129 communicates with the heater driver 113 in real time under the computerized control of the wafer pretreatment controller 121 so that the control command of the wafer pretreatment controller 121 is reflected in the heating operation of the heater 104 in real time. Induce to be.

Meanwhile, as shown in FIG. 1, a series of shutters 110 for selectively opening and closing the storage space of the cleaning tank 102 in the open window W of the stage 101 corresponding to the cleaning tank 102. ) Is further provided. In this case, the shutter 110 is normally kept open, and the cleaning tank 102 is stored under the control of the wafer pretreatment controller 120 during a series of fluid injection processes performed by the injector 106. By closing the space quickly, the fluid injected from the injector 106 serves to block in advance to prevent unnecessary mixing with the cleaning material in the cleaning tank 102.

At this time, the shutter driver 111 collects and receives various types of computation commands output from the wafer preprocessing controller 120 in real time while computing and mediating between the wafer preprocessing controller 120 and the shutter 110. By transmitting the received command to the shutter 110 side, the shutter 110 guides the shutter 110 to be systematically linked and driven according to the control schedule of the wafer preprocessing controller 120. In this case, the shutter driver 111 may be built in the shutter 110 according to a situation, or may be installed independently of the shutter 110.

Of course, in accordance with the installation of the shutter driver 111, as shown in FIG. 2, the shutter manager 128 is further disposed inside the wafer preprocessing controller 120. In this case, the shutter manager 128 is a wafer. Under the computer control of the preprocessing control unit 121, the real time communication with the shutter driving unit 111 serves to guide the control command of the wafer preprocessing control unit 121 to be reflected in the opening / closing operation of the shutter 110 in real time.

Under the structure of the semiconductor wafer polishing pretreatment apparatus 100 according to the present invention having such a configuration, as shown in FIG. 3, first, the wafer pretreatment control unit 121 of the wafer pretreatment controller 120 continues the interface unit 127. By checking in, it is determined whether or not a series of polishing pretreatment process start commands have been transmitted from the main controller 2 (step S1).

At this time, if it is determined from the main controller 2 that a separate polishing pretreatment start instruction has not been transmitted yet, the wafer pretreatment control unit 121 advances the flow to step S2 to maintain a series of standby states.

However, if it is determined that a series of polishing pretreatment process start commands have been transmitted from the main controller 2, the wafer pretreatment control unit 121 immediately loads the wafer handler 109 above the cleaning tank 102, In addition to the procedure of opening the shutter 110, the wafer handler 109 is lowered to immerse the wafer 1 in the cleaning material C inside the cleaning tank 102, and then the wafer handler 109. Is rotated, and a procedure of first removing the particles adhering to the wafer 1 is performed (steps S3 to S5).

Within this procedure, the wafer pretreatment control unit 121 communicates with the main controller 2, for example, "computation command for controlling the loading state of the wafer handler 109", "falling state of the wafer handler 109." Commands for controlling, " commands for controlling the self-rotation state of the wafer handler 109 ", " commands for controlling the wafer handling state of the wafer handler 109 " To the wafer handler managing unit 122, and selects and generates a "computation command for controlling the open state of the shutter 110", and transmits the generated command to the shutter managing unit 128. Proceed with the process.

According to this procedure, the shutter 110 is quickly opened to take an operation of opening the storage space of the cleaning tank 102, and in connection with this, the wafer handler 109 is provided with the wafer 1 before the polishing process is introduced. That is, after the wafer 101 is handled, the wafer 101 is loaded, and then the stage 101 is lowered to immerse the wafer 1 in the cleaning material C inside the cleaning tank 102. In the end, the polishing target wafer 1 handled by the wafer handler 109 may cause particles attached to a part of itself by the chemical action of the cleaning material C filled in the cleaning tank 102. It can be easily removed before the grinding process is in earnest.

In this situation, the wafer pretreatment control unit 121 selects and generates, for example, "a command for controlling the vibration state (vibration frequency, vibration timing, etc.) of the vibration plate 103" under communication with the main controller 2, The procedure of transmitting the generated command to the diaphragm management unit 124 is performed (step S6).

According to this procedure, the diaphragm 103 can be selectively vibrated while being mounted on a part of the cleaning tank 102, for example, the outer wall of the cleaning tank 102, and in the aftermath, The cleaning material C accommodated in the storage space of the 102 also vibrates violently under the influence of the vibration wave transmitted from the diaphragm 103, thereby naturally forming a series of megasonic waves, and eventually, the cleaning material. (C) The wafer 1 that is selectively immersed inside can receive not only the chemical influence due to its own characteristic of the cleaning material, but also the physical influence due to its vibration, thereby effectively removing particles buried in it. Can be easily obtained.

Of course, as mentioned above, since the wafer handler 109 continues to rotate itself at a constant speed from the time before the cleaning material C forms the megasonic wave, under the framework of the present invention, The physical particle removal effect that the wafer 1 can enjoy can be improved more than the case where the vibration of the cleaning material C proceeds alone.

In the situation where a series of particle removal procedures as described above are first performed, the wafer pretreatment control unit 121 checks whether or not a series of reference time has elapsed by checking the timer 121a built in the self (step) S7).

At this time, if it is determined that a series of reference times have not yet elapsed, the wafer pretreatment control unit 121 returns the flow to the aforementioned step S6 to continuously maintain the series of particle removal processes.

However, if it is determined that the series of reference times have all passed, the wafer preprocessing control unit 121 immediately stops driving the diaphragm 103 and raises the wafer handler 109 to raise the wafer 1. After aligning to a specific target point, a procedure of closing the shutter 110 is performed (steps S8 to S10).

Within this procedure, the wafer preprocessing control unit 121 communicates with the main controller 2, for example, " command for controlling the win state of the wafer handler 109 " and " self-rotating state of the wafer handler 109. " A command for controlling "," a command for controlling the wafer handling state of the wafer handler 109 ", etc. are selected and generated, and each generated command is transferred to the wafer handler management unit 123, A process of selecting and generating a "computation command for controlling the closed state of the shutter 110" and transferring the generated command to the shutter management unit 128 is performed, and at the same time, the vibration state of the vibration plate 103 is A process of selecting & generating " command for controlling " and delivering the generated command to the diaphragm management unit 124 is performed.

According to this procedure, the diaphragm 103 quickly stops its vibrating state, and the wafer handler 109 is raised with the wafer 1 handled, and is raised to a specific target point above the cleaning tank 102. The alignment is performed, and the shutter 110 is quickly closed to take an operation of blocking the storage space of the cleaning tank 102.

Through the above-described procedure, when a series of wafer alignment processes are completed, the wafer pretreatment control unit 121 immediately rotates the injector 106 about the cleaning tank 102 while fluidizing the wafer 1 as a target. For example, by spraying upward, a procedure of subsequently removing particles attached to the wafer 1 is performed (steps S11 to S13).

Within this procedure, the wafer pretreatment control unit 121 communicates with the main controller 2, for example, "a command for controlling the rotation state (rotation speed, rotation direction, etc.) of the injector 106", "injector 106". Command to control the fluid injection state (injection amount, injection timing, injection speed, etc.) of the ") and the like, and transfer each generated command to the injector management unit, and the " wafer handler 109 " Selects and generates a command for controlling the self-rotation state, and transfers the generated command to the wafer handler management unit.

In accordance with this procedure, the injector 106 rotates about the cleaning bath 102 along the guide rail 108, while spraying a series of fluids, for example, pure water, onto the wafer 1 to target the wafer 1. ) And subsequently remove the particles attached to the wafer, and in connection with this, the wafer handler 109 rotates at a constant speed, and thus, the polishing target to be handled by the wafer handler 109. The wafer 1 can be easily subsequently removed from the particles attached to its part by the physical action of the fluid ejected from the injector 106 before the actual polishing process proceeds.

In this case, as mentioned above, in addition to the ejection operation of the injector, the wafer handler continuously performs a self-rotating operation at a constant speed. In this case, the fluid injected from the injector 106 is transferred to the wafer handler 109. According to the auxiliary operation, it is not concentrated in any one place, but can be more evenly sprayed over the entire surface of the target wafer 1, and eventually, the physical particle removal effect that the wafer 1 can enjoy is the spraying operation of the injector. It is possible to take a more improved aspect than this case alone.

In the situation where a series of particles subsequent removal procedures as described above are in progress, the wafer pretreatment control unit 121 checks whether or not a series of reference time has elapsed by checking the timer 121a built in the self (step) S14).

At this time, if it is determined that a series of reference times have not yet elapsed, the wafer pretreatment control unit 121 returns the flow to the aforementioned step S13 to continuously maintain the subsequent particle removal process.

However, if it is determined that all the series of reference times have elapsed, the wafer pretreatment control unit 121 immediately stops driving the injector 106, stops the rotation of the wafer handler 109, and then the wafer handler. The procedure of unloading 109 to the outside of the stage 101 is performed (steps S15 to S17).

Within this procedure, the wafer pretreatment control unit 121 selects and generates, for example, "command for controlling the operation state of the injector 106" under communication with the main control unit 2_ injector, and injects the generated command. In addition to the process of transferring to the management unit 122 side, "command for controlling the unloading state of the wafer handler 109", "command for controlling the self-rotation state of the wafer handler 109", " A command for controlling the wafer handling state of the wafer handler 109 "is selected and generated, and a process of transferring each generated command to the wafer handler management unit 123 is performed.

According to this procedure, the injector 106 can stop the series of fluid ejection actions and take the action to return to the original position where it was located, and the wafer handler 109 handles the wafer 1. In this manner, the operation of escaping to the outside of the stage 101 can be performed. In the end, the wafer 1 handled by the wafer handler 109 is put into a full-blown polishing process in which all the particles existing on it are removed. It becomes possible.

In this case, of course, the wafer 1 can naturally avoid the damage caused by the adverse effects of the particles even under the physical pressure caused by the progress of the full polishing process.

This invention can be variously modified depending on the situation.

For example, in the present invention, by varying the shape of the guide rail 108 for guiding the rotational movement of the injector 106, the injector 105 is not a simple circular trajectory, but a more complex trajectory, for example, "spiral". It is possible to naturally form the trajectory, thereby maximizing the effect of the fluid on the wafer 1 to maximize the overall wafer particle removal effect.

As described in detail above, in the present invention, "a component that can physically and chemically remove particles attached to the wafer by applying a series of megasonic waves after immersing the wafer to be polished in a cleaning material" And "components capable of physically removing residual particles attached to the wafer by spraying a high pressure solution onto the wafer to be polished," and the like, through which the polishing process can be carried out in earnest. In the previous situation, by allowing the particles attached to the wafer to be mostly removed, it is possible to induce the damage of the wafer due to the bad influence of the particles in advance even under the physical pressure caused by the progress of the earnest polishing process.

According to the practice of the present invention, in the situation before the full polishing process, when the particles adhered to the wafer are previously removed, in the aftermath, contamination of the polishing apparatus (eg, the polishing pad) due to unnecessary transition of the particles may also be blocked in advance. As a result, unexpected mass damage of the wafer can naturally be minimized.

While specific embodiments of the invention have been described and illustrated above, it will be apparent that the invention may be embodied in various modifications by the winner.

Such modified embodiments should not be understood individually from the technical spirit or viewpoint of the present invention, and such modified embodiments should fall within the scope of the appended claims of the present invention.

1 conceptually illustrates a semiconductor wafer polishing pretreatment apparatus according to the present invention;

2 is a block diagram conceptually showing a detailed configuration of a wafer preprocessing controller according to the present invention.

3 is a flowchart sequentially illustrating a semiconductor wafer polishing pretreatment method according to the present invention.

Claims (13)

A cleaning tank containing a series of cleaning materials; In the state of handling the wafer to be polished, the wafer is selectively raised, lowered or self-rotated, and by external control, the wafer is immersed in a cleaning material inside the cleaning tank to induce removal of particles attached to the wafer. A wafer handler; It is installed so as to be movable around the cleaning tank, and in a raised state of the wafer handler, a series of fluids are sprayed onto the wafer while being rotated about the cleaning tank by external control, and attached to the wafer. An injector for removing particles; And a wafer pretreatment controller which forms a series of signal connection relationships with the wafer handler and the injector and selectively controls the operation states of the wafer handler and the injector. 2. A method according to claim 1, wherein a state of being mounted in a portion of the cleaning bath forms a series of signal connection relationships with the wafer pretreatment controller, and selectively vibrates under the computerized control of the wafer pretreatment controller, thereby inwardly connecting the inside of the cleaning bath. The semiconductor wafer polishing pretreatment apparatus further comprises a vibration means for transmitting the vibration wave. 3. The semiconductor wafer polishing pretreatment apparatus according to claim 2, wherein the vibration means is an ultrasonic wave generator. The cleaning apparatus according to claim 1 or 2, wherein a state of being mounted in a part of the cleaning tank forms a series of signal connection relationships with the wafer pretreatment controller, and selectively generates heat under computerized control of the wafer pretreatment controller. A semiconductor wafer polishing pretreatment apparatus further comprising a heater for controlling a temperature state of the cleaning material contained in the bath. The semiconductor wafer polishing pretreatment apparatus according to claim 1, wherein the injector further includes a liquefied gas supply means having a flow rate adjusting means. The wafer pretreatment controller of claim 1, further comprising: a wafer handler manager configured to control lifting and rotation of the wafer handler; An injector manager configured to adjust a state of the injector's movement and a fluid injection in accordance with the lifting and lowering of the wafer handler; A data storage unit for storing various data; And a wafer pretreatment control unit electrically connected to a main controller for integrally controlling the entire facility via the interface unit, and controlling the respective components. 7. The semiconductor wafer polishing pretreatment apparatus according to claim 6, further comprising a shutter management unit that controls an open / close state of a shutter for opening and closing the cleaning tank under computerized control of the wafer pretreatment control unit. The method of claim 6, further comprising a sensing signal management unit for sensing the temperature of the cleaning material filled in the cleaning tank in real time communication with the temperature sensor attached to the cleaning tank under the computer control of the wafer pretreatment control unit. A semiconductor wafer polishing pretreatment apparatus. The wafer handler which handles the wafer to be polished is installed in such a manner as to be able to move up and down on the cleaning tank containing the cleaning material. , Lowering the wafer handler to immerse the wafer in a cleaning material inside the cleaning bath, and then rotating the wafer handler to remove particles attached to the wafer; After a predetermined reference time has elapsed, the wafer handler is raised to align the wafer to a specific target point, and then the fluid is sprayed onto the wafer while rotating the injector about the cleaning tank. Removing particles adhered to the wafer. 10. The method of claim 9, wherein the fluid is a liquefied gas or ultrapure water, or at least one basic material or a strongly acidic material in the ultrapure water. 10. The method of claim 9 wherein the temperature of the fluid is between minus 50 degrees and 90 degrees. The method of claim 9, wherein the temperature of the cleaning material is 10 to 200 degrees. Determining whether a series of process start commands have been transmitted from the main controller side which collectively controls the entire facility; If the process start command is delivered, loading the wafer handler to the top of the cleaning bath, and then opening the shutter that was closing the cleaning bath; The wafer handler is lowered, the wafer is immersed in the cleaning material inside the cleaning bath, the wafer handler is rotated, and the vibration means attached to the cleaning bath is driven to remove particles attached to the wafer. Steps; Stopping the driving of the vibration means, raising the wafer handler to align the wafer to a specific target point after a predetermined first reference time elapses, and then closing the shutter; Rotating the injector about the cleaning tank together with the rotation of the wafer handler, spraying the fluid onto the wafer to remove particles adhering to the wafer; Stopping the driving of the injector, stopping the rotation of the wafer handler after a predetermined second reference time, and unloading the wafer handler to the outside of the cleaning bath. A control method of a semiconductor wafer polishing pretreatment apparatus.