KR100526214B1 - A Wafer Cleaning Device Using Megasonic - Google Patents
A Wafer Cleaning Device Using Megasonic Download PDFInfo
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- KR100526214B1 KR100526214B1 KR10-2003-0066574A KR20030066574A KR100526214B1 KR 100526214 B1 KR100526214 B1 KR 100526214B1 KR 20030066574 A KR20030066574 A KR 20030066574A KR 100526214 B1 KR100526214 B1 KR 100526214B1
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- 238000004140 cleaning Methods 0.000 title claims abstract description 95
- 239000007788 liquid Substances 0.000 claims abstract description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 61
- 238000005406 washing Methods 0.000 description 12
- 239000000356 contaminant Substances 0.000 description 8
- 101150114468 TUB1 gene Proteins 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 메가소닉을 이용한 웨이퍼의 세정장치에 대한 것이다. 본 발명에 의한 웨이퍼 세정장치는, 세정액과 세정대상인 웨이퍼가 수용되며 하면이 V자 형을 이루는 내조와, 상기 내조의 외측에 설치되고, 상기 내조에서의 세정액을 순환시키는 역할을 하는 외조와, 상기 내조의 외측 하방에 V자형을 이루도록 설치되며, 메가소닉 발생장치가 V자형의 양측벽에 설치되고, 메가소닉의 전달을 위한 물이 채워지는 메가소닉 수조를 포함하여, 상기 메가소닉 발생장치에서 발생한 음파와 캐비테이션이 웨이퍼 전체면에 대해 원활한 전달이 가능하게 되는 것을 특징으로 한다.The present invention relates to a wafer cleaning apparatus using megasonics. The wafer cleaning apparatus according to the present invention includes an inner tank in which a cleaning liquid and a wafer to be cleaned are accommodated, and a lower surface thereof has a V-shape, and an outer tank provided outside the inner tank and circulating the cleaning liquid in the inner tank, Installed in the outer side of the inner tub to form a V-shape, the megasonic generator is installed on both side walls of the V-shape, including a megasonic tank filled with water for the delivery of the megasonic, generated in the megasonic generator Sound waves and cavitation are characterized in that the smooth transfer over the entire wafer surface.
Description
본 발명의 웨이퍼의 세정장치에 대한 것으로, 더욱 상세하게는 메가소닉이 웨이퍼의 전체면에 대하여 골고루 전달되게 하여 최적의 세정을 수행하는 것이 가능한 메가소닉을 이용한 웨이퍼 세정장치에 대한 것이다.The present invention relates to a wafer cleaning apparatus of the present invention, and more particularly, to a wafer cleaning apparatus using megasonic capable of performing optimal cleaning by allowing the megasonic to be uniformly delivered to the entire surface of the wafer.
도 1은 종래의 메가소닉을 이용한 웨이퍼 세정장치를 예시한 계통도이다. 도시된 바에 의하면, 웨이퍼 세정장치(20)는 내측 사각형상의 밑면을 가지는 내조(21)와, 내조(21)로부터의 세정액이 오버플로 되도록 내조(21)의 외측에 설치되는 외조(23)와, 내조(21)의 하방에 설치되는 메가소닉 발생장치(25)를 포함한다.1 is a system diagram illustrating a wafer cleaning apparatus using a conventional megasonic. As shown, the wafer cleaning apparatus 20 includes an inner tank 21 having an inner rectangular bottom surface, an outer tank 23 provided outside the inner tank 21 so that the cleaning liquid from the inner tank 21 overflows, It includes the megasonic generator 25 provided below the inner tank 21.
내조(21)의 내측에는 세정액공급수단이 구비되며, 외조(23)에는 세정에 사용되고나서 오버플로된 세정액을 외부로 배출시키는 배출관(27)이 연결설치되며, 배출관(27)에는 세정액을 압축하는 펌프(29)와 세정액으로부터 오염물질을 제거하기 위한 필터(31)가 구비된다.A washing solution supply means is provided inside the inner tank 21, and an outer tube 23 is provided with a discharge pipe 27 for discharging the cleaning solution overflowed to the outside after being used for cleaning, and the discharge pipe 27 compresses the cleaning liquid. A pump 29 and a filter 31 for removing contaminants from the cleaning liquid are provided.
필터(31)를 통하여 오염물질이 제거된 세정액은 내조(21)의 내부로 공급되어 다시 웨이퍼(30)의 세정에 사용되게 된다.The cleaning liquid from which the contaminants are removed through the filter 31 is supplied into the inner tank 21 to be used for cleaning the wafer 30 again.
메가소닉 발생장치에서 발생하는 음파와 캐비테이션(cavitation)들은 웨이퍼(30)의 전체면에 대해 접촉하게 되며, 오염물질을 제거하게 된다.Sound waves and cavitations generated in the megasonic generator come into contact with the entire surface of the wafer 30 and remove contaminants.
캐비테이션은 큰 에너지를 가지는 공기방울로, 웨이퍼(30)의 표면에 충돌하여 파열되면서 그 에너지로 웨이퍼(30)의 표면의 오염물질을 제거하게 된다.Cavitation is a bubble having a large energy, it is crashed and ruptured on the surface of the wafer 30 to remove contaminants on the surface of the wafer 30 with the energy.
그러나, 상기와 같은 구성을 가지는 종래의 메가소닉을 이용한 웨이퍼 세정장치에는 다음과 같은 문제점이 있어 왔다.However, the following problems have arisen in the wafer cleaning apparatus using the conventional megasonic which has the above structure.
평평한 내조(21)의 하방에 메가소닉 발생장치(25)가 평행하게 설치되는데, 웨이퍼(30)가 원형상을 이루기 때문에 음파와 캐비테이션이 잘 전달되지 않는 데드존이 형성될 수 있다.The megasonic generator 25 is installed in parallel below the flat inner tub 21. Since the wafer 30 is circular, a dead zone in which sound waves and cavitation are not easily transmitted may be formed.
특히 메가소닉은 수직방향으로 진행하고 진행방향에 장애물이 있을 경우는 방해를 받게 되어 웨이퍼(30) 표면의 오염물질이 제대로 세정되지 못하거나, 웨이퍼의 표면이 각부가 불균일하게 세정되는 결과를 가져오게 된다.In particular, the megasonic proceeds in the vertical direction, and if there is an obstacle in the direction of movement, it is disturbed, so that the contaminants on the surface of the wafer 30 may not be properly cleaned, or the surface of the wafer may be unevenly cleaned. do.
본 발명의 목적은, 내조에 수용된 상태에서 세정되는 웨이퍼 전체면에 골고루 세정이 가능하고, 최적의 세정효과를 부여하는 메가소닉을 이용한 웨이퍼 세정장치를 구현하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to implement a wafer cleaning apparatus using megasonic, which is capable of evenly washing the entire surface of a wafer to be cleaned in a state accommodated in an inner tank and providing an optimum cleaning effect.
상기 목적을 달성하기 위한 본 발명에 의한 메가소닉을 이용한 웨이퍼 세정장치는, 세정액과 세정대상인 웨이퍼가 수용되며 하면이 V자 형을 이루는 내조와, 상기 내조의 외측에 상기 내조의 세정액이 오버플로 가능하게 설치되어 세정액을 순환시키는 역할을 하는 외조와; 상기 내조의 하면 외측에 V자형을 이루도록 설치되며, 메가소닉 발생장치가 V자형의 양측벽에 설치되고, 메가소닉의 전달을 위한 물이 채워지는 메가소닉 수조를 포함하여, 상기 메가소닉 발생장치에서 발생한 음파와 캐비테이션이 웨이퍼 전체면에 대해 원활한 전달이 가능하게 되는 것을 특징으로 한다.In the wafer cleaning apparatus using the megasonic according to the present invention for achieving the above object, a cleaning solution and a wafer to be cleaned are accommodated in an inner tank having a V-shaped lower surface and a cleaning liquid in the inner tank outside the inner tank. An outer tank that is installed to serve to circulate the cleaning liquid; The megasonic generator is installed to form a V-shape on the outer surface of the inner tank, and the megasonic generator is installed on both side walls of the V-shape, and the megasonic tank is filled with water for the delivery of the megasonic. The generated sound waves and cavitation are characterized in that the smooth transfer to the entire wafer surface.
내조 하단부의 V자형 홈에는 세정액 공급수단이 구비되는 것을 특징으로 한다.The V-shaped groove at the bottom of the inner tank is characterized in that the cleaning liquid supply means is provided.
세정액 공급수단은, 내조의 상방으로 다수개의 홀이 형성되고 V자형 모서리를 따라 설치되는 세정액공급관으로, 각 홀을 통하여 세정액이 수조 전체로 골고루 공급되게 하는 것을 특징으로 한다.The cleaning liquid supplying means is a cleaning liquid supply pipe having a plurality of holes formed above the inner tank and installed along the V-shaped corner, and the cleaning liquid is evenly supplied to the entire tank through each hole.
메가소닉 수조 하단의 V자형 홈에는 메가소닉의 전달을 위한 물을 공급하는 물공급수단이 구비되는 것을 특징으로 한다.The V-shaped groove at the bottom of the megasonic tank is characterized in that the water supply means for supplying water for the delivery of the megasonic.
물공급수단은 상기 V자형 홈을 따라 설치되는 물공급관으로, 상기 물공급관에는 양측으로 홀이 형성되어, 상기 메가소닉수조로 공급되는 물이 V자형 내조의 하면을 따라 좌우로 똑같이 공급되게 하는 것을 특징으로 한다.The water supply means is a water supply pipe is installed along the V-shaped groove, the water supply pipe is formed with holes on both sides, so that the water supplied to the megasonic tank is equally supplied to the left and right along the lower surface of the V-shaped inner tank. It features.
내조의 내측에는 웨이퍼를 내조의 내부에 고정시키기 위한 웨이퍼지지바가 양측에 구비되는 것을 특징으로 한다.Inside the inner tank is characterized in that the wafer support bar for fixing the wafer to the inner tank is provided on both sides.
내조의 내측에는 상기 웨이퍼지지바와 함께 웨이퍼가 쓰러지지 않고 지지되조록 보조하는 보조지지바가 구비되는 것을 특징으로 한다.Inside the inner tank is characterized in that the auxiliary support bar is provided with the wafer support bar to support the wafer without falling down.
내조의 내측에 세정을 위해 수용되는 웨이퍼는 카세트에 장착되며, 상기 카세트는 내조의 내부에서 이동가능하게 설치되어, 메가소닉과 카세트의 이동에 의해 발생하는 세정액의 흐름에 의해 웨이퍼의 세정이 수행되는 것을 특징으로 한다.The wafer accommodated for cleaning inside the inner tank is mounted in a cassette, and the cassette is installed to be movable in the inner tank, so that the wafer is cleaned by the flow of the cleaning liquid generated by the movement of the megasonic and the cassette. It is characterized by.
본 발명은 상기와 같은 구성에 의해 메가소닉 발생장치에서 발생한 음파와 캐비테이션이 웨이퍼 전체면에 골고루 전달되어 최적의 세정을 수행할 수 있게 한다.According to the present invention, the sound waves and the cavitation generated in the megasonic generator are evenly transmitted to the entire surface of the wafer, thereby enabling optimal cleaning.
이하 상기와 같은 구성을 가지는 본 발명에 의한 메가소닉을 이용한 웨이퍼 세정장치의 바람직한 실시예의 구성을 첨부된 도면을 참조하여 상세하게 설명한다.Hereinafter, a configuration of a preferred embodiment of a wafer cleaning apparatus using a megasonic according to the present invention having the configuration as described above will be described in detail with reference to the accompanying drawings.
도 2는 본 실시예에 의한 웨이퍼의 세정장치를 예시한 단면도이고, 도 3은 본 발명의 다른 실시예의 웨이퍼 세정장치를 예시한 단면도이다.2 is a cross-sectional view illustrating a wafer cleaning apparatus according to the present embodiment, and FIG. 3 is a cross-sectional view illustrating a wafer cleaning apparatus according to another embodiment of the present invention.
도 2에 도시된 바에 의하면, 본 실시예의 메가소닉을 이용한 웨이퍼 세정장치는 세정액과 세정대상인 웨이퍼(3)가 수용되는 내조(1)는 하면이 V자 형을 이루고, 그 외측에는 내조(1)로부터 세정액이 오버플로되며 세정액의 순환을 가능하게 하기 위한 외조(2)가 연설된다.As shown in Fig. 2, in the wafer cleaning apparatus using the megasonic of the present embodiment, the inner tank 1 in which the cleaning liquid and the wafer 3 to be cleaned are accommodated has a V-shaped lower surface, and the outer tank 1 is located on the outside thereof. From this, the cleaning liquid overflows and the outer tub 2 is opened to enable circulation of the cleaning liquid.
본 실시예의 내조(1) 하단에는 세정액을 공급하는 수단인 세정액공급관(6)이 V자형 홈을 따라서 설치되어 있는데, 세정액공급관(6)에는 수직 상방을 향해 공급홀이 일정한 간격으로 형성되어 있어서, 세정액이 상방으로 분출되는 것을 가능하게 한다.In the lower end of the inner tank 1 of the present embodiment, the cleaning liquid supply pipe 6, which is a means for supplying the cleaning liquid, is provided along the V-shaped groove, and the cleaning liquid supply pipe 6 is provided at regular intervals in the supply hole toward the vertical upwards. It is possible to eject the cleaning liquid upward.
이와 같은 수직방향의 세정액 플로에 의해 내조(1) 전체로 세정액이 원할하게 공급되며, 웨이퍼(3)의 전면에 오염되지 않은 세정액이 새로이 공급되어 웨이퍼(3)의 세정을 가능하게 된다. The cleaning liquid is smoothly supplied to the entire inner tank 1 by the flow of the cleaning liquid in the vertical direction, and the cleaning liquid that is not contaminated is newly supplied to the entire surface of the wafer 3 to enable the cleaning of the wafer 3.
본 실시예의 외조(2)는 내조(1)의 상반부 외측에 설치되며, 내조(1)의 양측벽을 통하여 세정액이 외조(2) 내부로 오버플로 되게 된다. 그리고, 외조(2)의 하면에는 세정액의 순환을 위한 세정액 배출관이 연설되어 내조(1)의 세정액 공급관(6)과 연통된다.The outer tub 2 of this embodiment is installed outside the upper half of the inner tub 1, and the cleaning liquid overflows into the outer tub 2 through both side walls of the inner tub 1. And the lower surface of the outer tank 2, the washing | cleaning liquid discharge pipe for circulation of a washing | cleaning liquid is extended, and it communicates with the washing | cleaning liquid supply pipe 6 of the inner tank 1. As shown in FIG.
세정액배출관에는, 세정액의 압력을 일정이상으로 유지시켜 세정액공급관(6)으로 압송시키는 펌프와, 상기 세정과정에서 사용하고 난 세정액에 포함되는 오염물질으로 제거하는 필터가 설치되어진다.The washing liquid discharge pipe is provided with a pump for maintaining the pressure of the washing liquid at a predetermined level or higher and pumping the washing liquid into the washing liquid supply pipe 6, and a filter for removing the pollutants contained in the washing liquid used in the washing process.
내조(1)의 내측에는 여러장의 웨이퍼(3)가 나란하게 세워지도록 웨이퍼(3)를 지지하는 수단인 웨이퍼지지봉(8)이 웨이퍼(3) 하단에 양측으로 설치되며, 양측 웨이퍼 지지봉(8)의 사이에는 웨이퍼(3)가 쓰러지는 것을 방지하기 위한 보조지지봉(9)이 설치된다.Inside the inner tank 1, a wafer support rod 8, which is a means for supporting the wafer 3 so that a plurality of wafers 3 stand side by side, is provided at both sides of the lower end of the wafer 3, and both wafer support rods 8 are provided. An auxiliary support bar 9 is installed between the wafers 3 to prevent the wafer 3 from falling over.
내조(1)의 외측 하방에는 내조(1)의 V자형상에 대응하는 V자형의 메가소닉수조(10)가 설치된다. 메가소닉수조(10)에는 음파의 전달을 위한 물이 채워지게 되며, 메가소닉수조(10)의 V자형을 이루는 양측벽에는 메가소닉발생기(4,5)가 장착되게 된다.Below the outer side of the inner tank 1, the V-shaped megasonic water tank 10 corresponding to the V shape of the inner tank 1 is provided. The megasonic tank 10 is filled with water for the transmission of sound waves, and the megasonic generators 4 and 5 are mounted on both side walls forming the V-shape of the megasonic tank 10.
메가소닉 발생기(4,5)는 내측에 전자기적 힘에 의해 메가소닉을 발생시키는 발음부와 메가소닉발생기의 표면을 덮어서 수조내부의 물로 메가소닉을 전달시키는 진동판을 포함하여 구성된다.The megasonic generators 4 and 5 include a sounding unit for generating megasonics by electromagnetic force inside and a diaphragm for covering the surface of the megasonic generators and transferring the megasonics to water in the tank.
메가소닉 수조(5)의 하단의 V자형 홈에는 메가소닉 수조를 물을 공급하는 물공급관(7)이 구비된다. 본 실시예의 물공급관(7)은 V자형상의 메가소닉 수조 좌우에 똑같은 상태로 물을 공급할 수 있도록 물공급관(7)의 양측으로 물 공급홀이 형성되어 있다.The V-shaped groove at the bottom of the megasonic tank 5 is provided with a water supply pipe 7 for supplying water to the megasonic tank. The water supply pipe 7 of this embodiment has water supply holes formed at both sides of the water supply pipe 7 so as to supply water in the same state to the left and right of the V-shaped megasonic tank.
이와 같이 좌우로 형성된 물공급홀을 통해 물출되는 물은 내조(1) 하면에 맺혀서 내조로의 메가소닉의 전달을 방해하는 캐비테이션을 제거하며, 메가소닉 수조(10) 상측으로 분출되어 외부로 배출되게 된다.The water discharged through the water supply hole formed in the left and right is formed on the bottom of the inner tank (1) to remove the cavitation that prevents the transmission of the megasonic to the inner tank, and is ejected to the upper side of the megasonic tank 10 to be discharged to the outside do.
다음은 상기와 같은 구성을 가지는 본 실시예의 메가소닉을 이용한 웨이퍼 세정장치의 작용을 설명한다.Next, the operation of the wafer cleaning apparatus using the megasonic of the present embodiment having the above configuration will be described.
기계적 연마과정에 종료되고, 웨이퍼(3)를 세정하는 경우에는 상기와 같은 구성의 웨이퍼 세정장치의 내조(1)에, 웨이퍼지지봉(8) 및 보조 지지봉(9)에 의해 웨이퍼(3)가 지지되도록 하여 다수장의 웨이퍼(3)를 적층 장착시킨다.When the wafer 3 is cleaned during the mechanical polishing process, the wafer 3 is supported by the wafer support rod 8 and the auxiliary support rod 9 in the inner tank 1 of the wafer cleaning apparatus having the above-described configuration. A plurality of wafers 3 are stacked in a stack as possible.
다음으로 웨이퍼 세정장치를 작동시키면, 세정액공급관(6)을 통하여 세정액이 상방을 향해 수직으로 분출되고, 웨이퍼(3)의 표면과 접촉하게 되어 웨이퍼(3)의 세정이 수행되기 시작한다.Next, when the wafer cleaning apparatus is operated, the cleaning liquid is ejected vertically upward through the cleaning liquid supply pipe 6, and comes into contact with the surface of the wafer 3 to start cleaning of the wafer 3.
메가소닉수조(10)에는 물공급관(7) 양측의 홀을 통하여 물이 공급되고, 메가소닉 발생기(4,5)에서 발생하는 메가소닉에 의해 캐비테이션(cavitation)이 발생하게 된다. 메가소닉 수조(10)에서 발생하는 캐비테이션은 내조(1) 하면을 따라 상측으로 이동하고 메가소닉수조(10)의 외부로 분출되게 된다. Water is supplied to the megasonic water tank 10 through holes on both sides of the water supply pipe 7, and cavitation is generated by the megasonic generated by the megasonic generators 4 and 5. Cavitation generated in the megasonic tank 10 is moved upward along the lower surface of the inner tank 1 and ejected to the outside of the megasonic tank 10.
본 실시예에서는 이에 의해 메가소닉 수조(10) 내부에서 발생한 캐비테이션에 의해 메가소닉이 내조(1) 세정액으로의 전달에 방해가 되지 않도록 하고 있다.In this embodiment, this prevents the megasonic from interfering with the delivery of the cleaning solution to the inner tank 1 due to the cavitation generated inside the megasonic tank 10.
메가소닉이 수조(10)의 물을 통하여 메가소닉이 전달되어 내조(1)의 내부에는 초음파에 의한 세정액의 진동이 발생하고, 캐비테이션이 발생하게 된다.Megasonic is delivered through the water of the water tank 10, the vibration of the cleaning liquid by the ultrasonic waves generated inside the inner tank 1, the cavitation occurs.
발생된 초음파와 웨이퍼(3)의 표면에서 파열되는 캐비테이션에 의해 웨이퍼표면의 오염물질을 제거되며, 이 과정에서 오염물질을 포함하는 세정액은 외조(2)로 분출되며, 외조(2)로 오버플로된 세정액은 세정액 배출관을 경유하여 정화되어 다시 세정액공급관(6)으로 순환하게 된다.Contaminants on the surface of the wafer are removed by the generated ultrasonic waves and cavitation ruptured on the surface of the wafer 3. In this process, the cleaning liquid containing the contaminants is ejected into the outer tank 2 and overflows to the outer tank 2. The cleaned liquid is purified through the cleaning liquid discharge pipe and circulated back to the cleaning liquid supply pipe (6).
세정액배출관을 통과하는 과정에서 세정액은 일정압력 이상으로 압축되고, 필터를 통과하며, 세정액공급관(6)으로 압송된다. 이 세정액은 다시 세정액 공급홀을 통해 내조(1)로 공급되어 진다.In the process of passing through the cleaning liquid discharge pipe, the cleaning liquid is compressed to a predetermined pressure or more, passes through the filter, and is pumped into the cleaning liquid supply pipe (6). This cleaning liquid is again supplied to the inner tank 1 through the cleaning liquid supply hole.
V자형의 메가소닉수조(10)의 양측벽에 설치된 메가소닉 발생기에 의해 발생한 메가소닉은 물을 통하여 내조의 세정액으로 전달되고, 도시된 점선과 같이 수직으로 진행하여 웨이퍼(3) 전체면에 걸쳐 메가소닉의 효과적인 전파가 가능하게 하고, 웨이퍼(3) 전체면에 걸쳐 적합한 상태로 세정이 이루어지게 된다.Megasonics generated by the megasonic generators provided on both side walls of the V-shaped megasonic tank 10 are transferred to the cleaning solution of the inner tank through water, and proceed vertically as shown in the dotted lines to cover the entire surface of the wafer 3. Effective propagation of the megasonic is enabled, and cleaning is performed in a suitable state over the entire surface of the wafer 3.
본 발명의 다른 실시예에서는 내조(1`)의 내측에 세정을 위해 수용되는 웨이퍼(3`)는 카세트(11)에 장착되며, 상기 카세트(11)는 내조(1`)의 내부에서 이동가능하게 설치된다. 이 경우는, 메가소닉발생기(4`,5`)과 카세트(11)의 이동에 의해 발생하는 세정액의 흐름에 의해 웨이퍼(3`)의 세정이 원활하게 수행되게 된다.In another embodiment of the present invention, the wafer 3` accommodated for cleaning inside the inner tank 1` is mounted on the cassette 11, and the cassette 11 is movable inside the inner tank 1`. Is installed. In this case, the cleaning of the wafer 3 'is smoothly performed by the flow of the cleaning liquid generated by the movement of the megasonic generators 4' and 5 'and the cassette 11.
본 발명의 권리범위는 상기 실시예에 한정되는 것이 아니라, 특허청구범위에 기재된 사항에 의해 정해지며, 특허청구범위에 기재된 사항과 동일성 범위에서 당업자가 행한 다양한 변형과 개작을 포함함은 자명하다.The scope of the present invention is not limited to the above embodiments, but is defined by the matters described in the claims, and it is obvious that the present invention includes various modifications and adaptations made by those skilled in the art in the same range as the matters described in the claims.
본 발명은 상술한 바와 같이 V자 형 메가소닉 수조의 양측벽에 메가소닉 발생기를 설치하기 때문에 메가소닉 파워가 효과적으로 세정조 내부로 전달되는 것이 가능하게 된다. 따라서, 메가소닉에 의한 웨이퍼 전체 표면에 대한 입자오염 세정이 원활하게 이루어지게 된다.As described above, since the megasonic generator is installed on both side walls of the V-shaped megasonic tank, the megasonic power can be effectively transmitted to the inside of the washing tank. Therefore, the particle contamination cleaning on the entire surface of the wafer by the megasonic is made smoothly.
또한 본 발명은 세정조 내의 세정액의 원활한 흐름을 유도하여 세정액에 오염물이 축적되는 것을 최소화하여 웨이퍼의 표면이 세정액에 의해 역으로 오염되는 것을 막아 궁극적으로 최적의 웨이퍼 세정을 수행할 수 있게 된다. In addition, the present invention induces a smooth flow of the cleaning liquid in the cleaning tank to minimize the accumulation of contaminants in the cleaning liquid, thereby preventing the surface of the wafer from being contaminated by the cleaning liquid, thereby ultimately performing optimal wafer cleaning.
도 1은 종래의 메가소닉을 이용한 세정장치를 예시한 개통도.1 is an opening diagram illustrating a cleaning apparatus using a conventional megasonic.
도 2는 본 발명에 의한 메가소닉을 이용한 웨이퍼 세정장치의 바람직한 실시예의 구성을 예시한 단면도.2 is a cross-sectional view illustrating the configuration of a preferred embodiment of a wafer cleaning apparatus using a megasonic according to the present invention.
도 3은 본 발명의 다른 실시예의 웨이퍼 세정장치의 단면도.3 is a cross-sectional view of a wafer cleaner of another embodiment of the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
1......내조 2.......외조1 ......
3......웨이퍼 4, 5....메가소닉발생기(megasonic transducer)3 ...... Wafer 4, 5 .... megasonic transducer
6......세정액공급관 7.......물공급관6 ...... Cleaning liquid supply pipe 7 ....... Water supply pipe
8......웨이퍼지지봉 9.......보조지지봉8 ...... Wafer Support Rod 9 ....... Secondary Support Rod
10.....메가소닉 수조10 ..... Megasonic Countertop
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| KR20200084152A (en) | 2019-01-02 | 2020-07-10 | 박성기 | Cleaning apparatus for semiconductor components |
| US10937670B2 (en) | 2017-07-06 | 2021-03-02 | Samsung Electronics Co., Ltd. | Megasonic cleaner |
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| KR101104016B1 (en) * | 2008-11-04 | 2012-01-06 | 주식회사 엘지실트론 | Wafer processing apparatus and barrel used therein, and wafer processing method |
| CN115881516A (en) * | 2022-12-15 | 2023-03-31 | 上海至纯洁净系统科技股份有限公司 | A method for suppressing cavitation in megasonic cleaning |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US10937670B2 (en) | 2017-07-06 | 2021-03-02 | Samsung Electronics Co., Ltd. | Megasonic cleaner |
| KR20200084152A (en) | 2019-01-02 | 2020-07-10 | 박성기 | Cleaning apparatus for semiconductor components |
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