KR100505570B1 - Method for processing the surface of a material layer in a manufacturing process of a semiconductor device and method for forming a material layer using the same - Google Patents

Abstract

The present invention relates to a material film surface treatment method and a method of forming a material film using the same in the manufacturing process of a semiconductor device. Before forming the nitride film to be used as a mask on the titanium silicide layer to be patterned, the titanium silicide layer is surface treated by plasma treatment or a method of baking the material film. By doing so, not only the nitride film is prevented from being lifted on the titanium silicide layer, but water present in the titanium silicide layer and the nitride film interface is removed, thereby causing popping in the process of oxidizing the titanium silicide layer. Can be prevented from appearing.

Description

Method for processing the surface of a material layer in a manufacturing process of a semiconductor device and method for forming a material layer using the same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a material film surface treatment method and a method of forming a material film using the same in a semiconductor device manufacturing process.

As semiconductor devices are highly integrated, a laminate structure including a nitride film is widely used as an oxide mask for gate patterning. In addition, in order to minimize thermal budget, a material film forming method using a plasma capable of deposition at a relatively low temperature of 400 ° C. or less is used. Conventionally, a plasma oxide film such as a high thermal oxide film, a silane, or a TEOS film is used as an oxide film mask. However, as semiconductor devices have been increasingly integrated, the necessity of forming contacts in minute regions by using a self-aligning method has increased, and according to such necessity, an oxide mask having a nitride film having an excellent etching selectivity is used.

Hereinafter, a method of forming a material film in a manufacturing process of a semiconductor device according to the prior art will be described with reference to the accompanying drawings.

Referring to FIG. 1, a gate oxide film 12 is formed on a semiconductor substrate 10. A gate polysilicon layer 14 is formed on the gate oxide layer 12. A titanium silicide layer (TiSi) 16 is formed on the gate polysilicon layer 14. The plasma nitride film 18 is formed on the titanium silicide layer 16. The plasma oxide film 20 is formed on the plasma nitride film 18. An anti-reflective layer 22 is formed on the plasma oxide layer 20. A photoresist film is coated on the entire surface of the antireflection film 22. The photoresist film is patterned to form a photoresist film pattern 24 defining a gate line formation region on the anti-reflection film 22.

Subsequently, referring to FIG. 2, the reflection among the anti-reflection film 22 and the material films 20, 18, 16, 14, and 12 formed by using the photoresist pattern 24 as an etch mask. The prevention film 22, the plasma oxide film 18, and the plasma nitride film 16 are sequentially anisotropically etched. Next, the photoresist film pattern 24 is removed. In this case, the photoresist layer pattern 24 is removed by a strip using sulfuric acid (H 2 SO 4) and wet etching for 30 seconds using 200: 1 hydrofluoric acid (HF). As a result, an oxide mask made of a plasma nitride film pattern 18a, a plasma oxide film pattern 20a and an antireflection film pattern 22a is formed on the titanium silicide layer 16. However, the interface between the titanium silicide layer 16 and the plasma nitride layer pattern 18a is rapidly etched in the strip process for removing the photoresist layer pattern 24, thereby lifting the nitride layer pattern 18a. You can see it. Thereafter, the titanium silicide layer 16 and the gate polysilicon layer 14 are sequentially anisotropically etched using the oxide mask as an etching mask. Subsequently, when the anti-reflection film pattern 22a is removed, the oxide mask, the gate polysilicon layer pattern 14a, and the titanium silicide layer pattern 16a are formed on the gate oxide film 12 as illustrated in FIG. 3. Gate stack 26 is formed. Thereafter, the exposed front surface of the gate polysilicon layer pattern 14a is oxidized.

As described above, the material film forming method of the semiconductor device manufacturing process according to the prior art, the gate of the titanium silicide layer pattern 16a and the gate polysilicon layer pattern 14a during the stripping process of the photoresist film pattern. Lifting occurs between an electrode and the oxide mask. Specifically, the plasma nitride film pattern 18a constituting the oxide film mask is lifted.

In addition, in the process of oxidizing the exposed entire surface of the gate polysilicon layer pattern 14a, popping may occur due to thermal expansion such as water present at an interface between the plasma nitride layer pattern 18a and the titanium silicide layer pattern 16a. Poping phenomenon occurs.

Accordingly, the technical problem to be achieved by the present invention is to solve the above-mentioned problems in the prior art, and to prevent the lifting of the gate protective film mask formed on the laminate used as the gate electrode, and the interface between the laminate and the mask. The present invention provides a method of treating a material film surface in a manufacturing process of a semiconductor device capable of removing water present in the semiconductor device to prevent popping from occurring during oxidation of the gate electrode.

Another object of the present invention is to provide a method of forming a material film in a process of manufacturing a semiconductor device using the material film surface treatment method.

In order to achieve the above technical problem, the material film surface treatment method in the manufacturing process of the semiconductor device according to the present invention follows the following procedure.

A method of manufacturing a semiconductor device using a plasma nitride film as a mask for patterning a material film formed on a semiconductor substrate, wherein the baking of the material film at a predetermined temperature for a predetermined time is performed before the nitride film is formed on the material film. It features.

The material film is baked at about 400 ° C. for about 10 seconds before the nitride film is formed.

In addition, in order to achieve the above technical problem, the material film surface treatment method in the manufacturing process of the semiconductor device according to the present invention follows the following procedure.

A method of manufacturing a semiconductor device using a plasma nitride film as a mask for patterning a material film formed on a semiconductor substrate, characterized in that the surface of the material film is plasma treated before the nitride film is formed on the material film.

In this case, the plasma treatment is performed in-situ after forming the material film. Here, the surface of the material film is treated with ammonia (NH 3) plasma.

In order to achieve the above another technical problem, the material film forming method in the manufacturing process of the semiconductor device according to the present invention using the surface treatment method is performed according to the following procedure.

(a) A first laminate is formed on a semiconductor substrate. (b) The surface of the first laminate is treated. (c) forming a second laminate on the first laminate. (c) pattern the second stack. (d) The 1 stack is patterned. (e) The surface of the first laminate is oxidized.

Here, the first stack is a stack corresponding to the gate electrode and is a stack in which a gate conductive layer and a gate silicide layer are sequentially formed.

The second stack is a stack used as a protective film for a mask or gate electrode used for patterning the first stack, and is formed by sequentially forming a plasma nitride film (PE-SiN), a plasma oxide film, and an antireflection film. .

Surface treatment of the first laminate is carried out in two ways.

The first method is to bake the first stack, and the second method is to treat the surface of the first stack with ammonia plasma.

In the manufacturing method of the semiconductor device according to the present invention, the material film forming method is a surface treatment by a plasma treatment or a method of baking the material film before forming the nitride film to be used as a mask on the material film to be patterned. By doing so, not only the nitride film may be prevented from being lifted on the material film, but water existing at the interface between the material film and the nitride film is removed, thereby preventing popping from occurring during the oxidation of the material film. have.

Hereinafter, a material film surface treatment method and a material film forming method using the same in a semiconductor device manufacturing process according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

However, embodiments of the present invention can be modified in many different forms, the scope of the invention should not be construed as limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. In the drawings, the thicknesses of layers or regions are prepared for clarity of specification. In the drawings like reference numerals refer to like elements. In addition, where a layer is described as being "top" of another layer or substrate, the layer may be directly on top of the other layer or substrate, with a third layer intervening therebetween.

4 to 6 are diagrams showing step-by-step methods of forming a material film in a manufacturing process of a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a diagram showing a photosensitive film pattern 56 defining a gate line forming region on the antireflection film 54. Referring to this, the gate oxide film 42 is formed on the semiconductor substrate 40. Subsequently, the gate conductive layer 44 and the gate silicide layer 46 are sequentially formed on the gate oxide layer 42 to form a first stack. The gate conductive layer 44 and the gate silicide layer 46 are formed of a doped polysilicon layer and a titanium silicide layer, respectively.

Subsequently, the first laminate is surface treated. The surface treatment of the first laminate is consequently for surface treatment of the gate silicide layer 46, which is performed in the following two methods.

First, the semiconductor substrate 40 on which the gate silicide layer 46 is formed is baked at a predetermined temperature for a predetermined time.

Bake Experiment

In the present invention, the semiconductor substrate 40 on which the gate silicide layer 46 is formed is baked at a temperature of about 400 ° C. for the surface treatment of the gate silicide layer 46. At this time, baking was performed twice at the same temperature. The first one was baked for 5 seconds and the second 10 seconds.

When baking was performed at about 400 ° C. for 5 seconds, the laminate formed on the gate silicide layer 46 was lifted.

On the other hand, when the baking was performed for about 10 seconds, the laminate formed on the gate silicide layer 46 was not lifted.

Accordingly, the bake of the gate silicide layer 46 is preferably about 400 ° C. for about 10 seconds. However, when the bake temperature is changed, the bake time may also be changed.

Secondly, the gate silicide layer 46 is surface treated using plasma. Specifically, the surface of the gate silicide layer 46 is treated using a nitride source gas such as ammonia gas (NH 3) or nitrogen gas (N 2). The plasma treatment is performed in-situ after the gate silicide layer 46 is formed. As a result of the plasma treatment, a plasma treatment layer 48 is formed on the gate silicide layer 46. The first and second insulating layers 50 and 52 and the anti-reflection film 54 are sequentially formed on the plasma processing layer 48 to form a second stack. The first and second insulating layers 50 and 52 are formed of a plasma nitride film and a plasma oxide film, for example, a plasma teos (TEOS) film. A photosensitive film, for example a photoresist film, is applied to the entire surface of the anti-reflection film 54. The photoresist film is patterned to form a photoresist film pattern 56 defining a gate line formation region.

5 is a diagram illustrating a step of patterning the second stack. Specifically, using the photoresist pattern 56 as an etch mask, the second stack formed under the anti-reflection film 54 and under the anisotropic layer is exposed until the interface of the plasma treatment layer 46 is exposed. Etch it. As a result, a second laminate pattern composed of a plasma nitride film pattern 50a, a plasma oxide film pattern 52a, and an antireflection film pattern 54a is formed on the plasma processing layer 48. Thereafter, the photoresist film pattern 56 is removed. The photoresist layer pattern 56 is removed by wet etching for about 30 seconds using a sulfuric acid strip and about 200: 1 hydrofluoric acid (HF). As shown in FIG. 5, in the process of removing the photoresist layer pattern, lifting by side etching of the second laminate pattern, in particular, the plasma nitride layer pattern does not occur.

6 shows a step of forming the gate stack 58. Specifically, using the second laminate pattern as an etching mask, the plasma treatment layer 48 and the laminates formed thereon are anisotropically etched until the interface of the gate oxide layer 42 is exposed. Thereafter, the anti-reflection film pattern 54a is removed. As a result, a first laminate pattern, that is, a gate electrode, formed of a gate conductive layer pattern 44a and a gate silicide layer pattern 46a is formed, and the first and second laminate patterns are formed on the semiconductor substrate 40. A gate stack 58 is formed. Thereafter, the gate electrode, in particular, the surface of the gate conductive layer pattern 44a is oxidized. At this time, no popping phenomenon occurs because the plasma treatment layer 48 is formed between the gate silicide layer pattern 46a and the plasma nitride layer pattern 50a in the surface treatment process.

As described above, in the manufacturing method of the semiconductor device according to the present invention, the material film forming method is a surface treatment by a plasma treatment or a method of baking the material film before forming the nitride film to be used as a mask on the material film to be patterned. . By doing so, not only the nitride film may be prevented from being lifted on the material film, but water existing at the interface between the material film and the nitride film is removed, thereby preventing popping from occurring during the oxidation of the material film. have.

The present invention is not limited to the above embodiments, and it is apparent that many modifications can be made by those skilled in the art within the technical idea of the present invention.

1 to 3 are diagrams showing step by step methods for forming a material film in a semiconductor device manufacturing process according to the prior art.

4 to 6 are diagrams showing step-by-step methods of material film surface treatment and a method of forming a material film using the same in the manufacturing process of a semiconductor device according to an embodiment of the present invention.

* Description of Signs of Major Parts of Drawings *

40: semiconductor substrate. 42: gate oxide film.

44: gate conductive layer. 46: gate silicide layer.

48: surface treatment layer. 50, 52: First and second insulating films.

54: Antireflection film. 58: gate stack.

Claims (8)

Forming a titanium silicide layer on the semiconductor substrate; Baking the titanium silicide layer at 400 ° C .; Forming a plasma nitride film as a mask on the baked titanium silicide layer; And And patterning the titanium silicide layer. The material film surface treatment of a semiconductor device manufacturing process according to claim 1, wherein the titanium silicide layer is baked at about 400 ° C. for about 10 seconds before the nitride film is formed, thereby treating the surface of the titanium silicide layer. Way. Forming a titanium silicide layer on the semiconductor substrate; Plasma treating the surface of the titanium silicide layer using a nitride source gas; Forming a plasma nitride film as a mask on the plasma treated titanium silicide layer; And And patterning the titanium silicide layer. 4. The method of claim 3, wherein the plasma treatment is performed in-situ after forming the titanium silicide layer. The method of claim 4, wherein the nitride source gas plasma is nitrogen gas (N 2) or ammonia gas (NH 3) plasma. (a) forming a first stack on the semiconductor substrate; (b) treating the surface of the first stack with a nitride source gas plasma; (c) forming a second stack on the first stack; (d) patterning the second stack; (e) patterning the first stack; And (f) oxidizing the exposed side of the patterned first stack, The first stack is formed by sequentially stacking a doped polysilicon layer and a gate silicide layer and oxidizing an exposed surface of the doped polysilicon layer. Way. The method of claim 6, wherein the second laminate is a plasma nitride film (PE-SiN), a plasma oxide film, and an anti-reflection film sequentially formed. 7. The method of claim 6, wherein the nitride source gas is nitrogen gas (N2) or ammonia gas (NH3).

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