KR100505355B1 - 고해상도 디지털 엑스레이 검출용 tft 기판 - Google Patents
고해상도 디지털 엑스레이 검출용 tft 기판 Download PDFInfo
- Publication number
- KR100505355B1 KR100505355B1 KR10-2002-0042988A KR20020042988A KR100505355B1 KR 100505355 B1 KR100505355 B1 KR 100505355B1 KR 20020042988 A KR20020042988 A KR 20020042988A KR 100505355 B1 KR100505355 B1 KR 100505355B1
- Authority
- KR
- South Korea
- Prior art keywords
- pixel
- tft substrate
- plate
- substrate
- ray detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
Claims (3)
- 엑스레이 검출용 TFT 기판에 있어서,TFT 기판을 2층으로 중첩배열시켜 2중기판을 형성시키되, 상층판이 하층판에 일축방향으로 1/2픽셀길이 만큼 이동되어 중첩됨으로써, 각 상측판과 하층판의 이동차가 1/2픽셀길이를 가지게 구성되어, 1픽셀에서 2개의 가상픽셀이 구해지는 것을 특징으로 하는 고해상도 디지털 엑스레이 검출용 TFT 기판.
- 제1항에 있어서, 상기 2중기판은, 일축방향으로 이동된 방향으로 중첩배열된 2중기판의 픽셀열 중, 상판의 픽셀열을 A라고 하고, 하판의 픽셀열을 B라고 하며,1/2픽셀길이방향 이동에 의하여 형성된 가상의 픽셀열을 I라고 할 때,At : t번째 A판 픽셀의 측정값,Bt : t번째 B판 픽셀의 값으로서, A판의 두께에 의한 감쇠오차를 보정한 측정값,It : t번째 I판 픽셀의 값으로 정하고: A판의 픽셀열에서 x번째 픽셀에서 N번째 픽셀까지의 측정값의 합,: B판의 픽셀열에서 x번째 픽셀에서 N번째 픽셀까지의 측정값의 합, 이라면상기 가상 픽셀열의 It 는, It : t가 짝수(2k)일 때 (k=0,1,2,3...N), It : t가 홀수(2k+1)일 때 (k=0,1,2,3...N)로 구하여 해상도를 2배로 하는 것을 특징으로 하는 고해상도 디지털 엑스레이 검출용 TFT 기판.
- 엑스레이 검출용 TFT 기판에 있어서,TFT 기판을 3층 중첩배열시키되 중간층판은 하층판에 X축방향으로 1/2픽셀길이 만큼 이동시킨 후 중첩시키고,최상층판은 하층판에 Y축방향으로 1/2픽셀길이 만큼 이동시킨 후 중첩시켜, 구성시킴으로서하나의 픽셀의 데이터를 4개의 데이터로 분해해석함으로서 중첩된 각 기판의 픽셀 측정값을 비교처리하여 해상도를 높이는 것을 특징으로 하는 고해상도 디지털 엑스레이 검출용 TFT 기판.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0042988A KR100505355B1 (ko) | 2002-07-22 | 2002-07-22 | 고해상도 디지털 엑스레이 검출용 tft 기판 |
PCT/KR2002/002392 WO2004010210A1 (en) | 2002-07-22 | 2002-12-18 | Tft structure for high resolution digital x-ray detector |
AU2002368095A AU2002368095A1 (en) | 2002-07-22 | 2002-12-18 | Tft structure for high resolution digital x-ray detector |
US10/486,559 US7012259B2 (en) | 2002-07-22 | 2002-12-18 | TFT structure for high resolution digital X-ray detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0042988A KR100505355B1 (ko) | 2002-07-22 | 2002-07-22 | 고해상도 디지털 엑스레이 검출용 tft 기판 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020064746A KR20020064746A (ko) | 2002-08-09 |
KR100505355B1 true KR100505355B1 (ko) | 2005-08-01 |
Family
ID=27727412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0042988A Expired - Fee Related KR100505355B1 (ko) | 2002-07-22 | 2002-07-22 | 고해상도 디지털 엑스레이 검출용 tft 기판 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7012259B2 (ko) |
KR (1) | KR100505355B1 (ko) |
AU (1) | AU2002368095A1 (ko) |
WO (1) | WO2004010210A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5684985A (en) | 1994-12-15 | 1997-11-04 | Ufil Unified Data Technologies Ltd. | Method and apparatus utilizing bond identifiers executed upon accessing of an endo-dynamic information node (EDIN) |
JP2007072162A (ja) * | 2005-09-07 | 2007-03-22 | Mitsubishi Electric Corp | 表示装置 |
US7696481B2 (en) * | 2005-11-22 | 2010-04-13 | General Electric Company | Multi-layered detector system for high resolution computed tomography |
KR101179071B1 (ko) * | 2009-03-10 | 2012-09-03 | 주식회사 엘지화학 | 사각형 단위체의 제조방법 |
US9165960B2 (en) | 2013-01-04 | 2015-10-20 | Industrial Technology Research Institute | Pixel circuit, active sensing array, sensing device and driving method thereof |
JP2015161594A (ja) * | 2014-02-27 | 2015-09-07 | 日立アロカメディカル株式会社 | 放射線検出器 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5340988A (en) * | 1993-04-05 | 1994-08-23 | General Electric Company | High resolution radiation imaging system |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4772885A (en) * | 1984-11-22 | 1988-09-20 | Ricoh Company, Ltd. | Liquid crystal color display device |
JPH03158822A (ja) * | 1989-11-17 | 1991-07-08 | Sony Corp | 二層型液晶表示装置 |
US5313055A (en) * | 1991-09-30 | 1994-05-17 | Fuji Xerox Co., Ltd. | Two-dimensional image read/display device |
KR100207135B1 (ko) * | 1994-10-18 | 1999-07-15 | 니시무로 타이죠 | 반사형 액정표시소자 및 그 제조방법 |
JP3649907B2 (ja) * | 1998-01-20 | 2005-05-18 | シャープ株式会社 | 二次元画像検出器およびその製造方法 |
JP2000046951A (ja) * | 1998-07-31 | 2000-02-18 | Shimadzu Corp | 放射線検出素子 |
JP3597392B2 (ja) * | 1998-08-07 | 2004-12-08 | シャープ株式会社 | 二次元画像検出器 |
JP2000165747A (ja) * | 1998-11-27 | 2000-06-16 | Sharp Corp | X線撮像装置 |
JP2002168955A (ja) | 2000-12-01 | 2002-06-14 | Canon Inc | 放射線検出装置及びその製造方法並びに放射線撮像システム |
JP2005258410A (ja) * | 2004-03-08 | 2005-09-22 | Samsung Electronics Co Ltd | 液晶表示装置及びその製造方法 |
-
2002
- 2002-07-22 KR KR10-2002-0042988A patent/KR100505355B1/ko not_active Expired - Fee Related
- 2002-12-18 AU AU2002368095A patent/AU2002368095A1/en not_active Abandoned
- 2002-12-18 US US10/486,559 patent/US7012259B2/en not_active Expired - Fee Related
- 2002-12-18 WO PCT/KR2002/002392 patent/WO2004010210A1/en not_active Application Discontinuation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5340988A (en) * | 1993-04-05 | 1994-08-23 | General Electric Company | High resolution radiation imaging system |
Also Published As
Publication number | Publication date |
---|---|
US20040200970A1 (en) | 2004-10-14 |
WO2004010210A1 (en) | 2004-01-29 |
AU2002368095A1 (en) | 2004-02-09 |
US7012259B2 (en) | 2006-03-14 |
KR20020064746A (ko) | 2002-08-09 |
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