KR100495566B1 - Dielectric Materials for Plasma Display Panel and Manufacturing Method thereof - Google Patents

Abstract

The present invention relates to a dielectric for plasma display panel and a method for manufacturing the same, comprising a mesh structure prepared by a sol-gel method and comprising an organic monomer capable of being crosslinked or modified with an oxygen atom bonded to silicon or a crosslinkable organic monomer in the structure. The present invention discloses a dielectric for plasma display panel, characterized in that the branch comprises an organosilicon compound. According to the present invention, the dielectric composition can be baked at a low temperature of 150 to 200 degrees Celsius without containing PbO, and the dielectric film can be easily formed from the liquid phase using a coating method.

Description

Dielectric Materials for Plasma Display Panel and Manufacturing Method thereof

TECHNICAL FIELD The present invention relates to a dielectric composition for a plasma display device, and more particularly to a dielectric composition with an inorganic-organic hybrid composition used to form a light transparent dielectric layer on an electrode for a plasma display device.

As a conventional technique related to the present invention, according to Japanese Patent Nos. 1993-041167 and 1994-310036, the first dielectric film on the back substrate is made of borosilicate linked glass having a softening point of 560 to 600 degrees Celsius including a black pigment. 2 The dielectric film is composed of borosilicate-linked glass with a softening point of 460 to 510 degrees Celsius. In this case, when the glass paste including the glass powder having a smaller maximum particle diameter than the average film thickness is formed by firing, a dielectric film having a very high transparency can be formed. As described above, the dielectric film using the glass paste containing the low melting point glass powder as a main component is uniformly formed in the entire glass surface by the screen printing method and then formed at a thickness of 20 to 40 μm at a high temperature of 500 to 600 degrees Celsius. The method of baking is used.

The glass paste is a mixture of a glass powder of PbO-B ₂ O ₃ -SiO ₂ -based composition containing excess PbO, a filler, an organic solvent, and a polymer resin. When the dielectric film is formed by the high temperature firing using the glass powder, bubbles are included in the layer depending on the composition, particle size, manufacturing conditions, and firing conditions of the glass powder, thereby lowering the transmittance of the dielectric film. In addition, when using a glass composition paste containing excessive PbO, the firing temperature may be reduced, but there are various problems such as environmental pollution, many bubbles after sintering, reduction of PbO, and the like. The metallic Pb remaining in the film serves to lower the withstand voltage of the dielectric layer, which in turn shortens the life of the product. When the dielectric film is formed by high temperature firing at a temperature of 550 to 580 degrees Celsius, the repeated heat treatment is also performed within this temperature range on the glass substrate under the dielectric film. Such a high temperature thermal history process has many disadvantages such as changing the dimensions of the substrate glass and displacing the pattern, causing defects in the display panel, and also causing difficulty in making the panel larger.

Japanese Patent No. 2001-195985 discloses an example in which Bi ₂ O ₃ is used as a PbO alternative composition, but Bi ₂ O ₃ is a heavy metal and has a problem of being an environmental pollutant.

Currently, P ₂ O ₅ , BaO, V ₂ O ₅ and SnO are mainly researched to obtain Pb-free low-temperature fired transparent dielectrics, and B ₂ O ₃ , ZnO, SiO ₂ , and alkali for improved physical properties. Oxides and alkaline earth oxides are used as additives. However, it is difficult to obtain a low-temperature calcined transparent dielectric material without adding excess Pb by the method using a frit mainly containing low melting glass.

The present invention has been made to solve the problems of the prior art, an object of the present invention is a composition having no PbO, plasma having a transparent dielectric layer having a thickness of 10 ㎛ or more even at a firing temperature of less than 200 degrees Celsius and no bubbles A dielectric composition for a display device is provided.

In order to achieve the above object, the dielectric of the present invention is prepared by the sol-gel method, and has an inorganic-organic hybrid material having a network structure crosslinked with silicon atoms or crosslinkable organic monomers bonded to silicon in the structure (hereinafter referred to as organosilicon compounds). And a dielectric for a plasma display panel.

The dielectric of the present invention can be prepared using silicon compounds represented by the following general formulas 1 to 3 as starting materials.

<Formula 1>

(OR ¹ ) _n Si-R ² _m (n + m = 4)

<Formula 2>

(OR ¹ ) _n Si- (XR ³ ) _m (n + m = 4)

<Formula 3>

R ⁴ SiCl ₃

In General Formulas 1 to 3, R ¹ is a straight or branched chain alkyl group of 1 to 10 carbon atoms, such as methyl, ethyl, propyl, and butyl, or a hydrogen atom in which these groups are hydrolyzed, and R ² is a straight chain having 1 to 4 carbon atoms. Or a branched alkyl group, a phenyl group, a phenyl alkoxy group, or an amine group. In addition, n is a natural number of 1-4, m shows the integer of 0-3.

X is a carbon chain having 3 to 6 carbon atoms, and R ³ represents a substance containing a vinyl group, a glycidoxy group, a methacryl group, or a fluoride atom substituted in a carbon chain having 4 to 8 carbon atoms.

R ⁴ is a fluoride valence in a carbon chain having 1 to 10 carbon atoms, or a straight or branched alkyl group or a hydrogen atom, a phenyl group, a phenyl alkoxy group, an amine group, a vinyl group, a glycidoxy group or a methacryl group, or a carbon chain having 4 to 8 carbon atoms. Substituted material.

Examples of specific compounds belonging to the general formulas (1) to (3) include tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetrabutoxysilane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltripropoxysilane, Vinyltriacetoxysilane, vinyldimethoxyethoxysilane, aminopropyltriethoxysilane, aminopropyltrimethoxysilane, aminopropyltripropoxysilane, N- (3-acryloxy-2-hydroxypropyl) -3 -Aminopropyltriethoxysilane, N- (3-acryloxy-2-hydroxypropyl) -3-aminopropyltrimethoxysilane, 3-acryloxypropyldimethoxysilane, 3-acryloxypropyldiethoxysilane, 3-acryloxypropyldipropoxysilane, 3- (meth) acryloxypropyltrimethoxysilane, 3- (meth) acryloxypropyltriethoxysilane, 3- (meth) acryloxypropyltripropoxysilane, N -(2-aminoethyl-3-amino Phil) -trimethoxysilane (DIAMO), N- (2-aminoethyl-3-aminopropyl) -triethoxysilane, N- (2-aminoethyl-3-aminopropyl) -tripropoxysilane, N -(2-aminoethyl-3-aminopropyl) -tributoxysisilane, trimethoxysilylpropyldiethylenetriamine (TRIAMO), triethoxysilylpropyldiethylenetriamine, tripropoxysilylpropyldiethylenetri Amine, tributoxysilylpropyldiethylenetriamine, 2-glycidoxyethylmethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2-glycidoxypropyl Trimethoxysilane, 2-glycidoxypropyltriethoxysilane, 2-glycidoxyethylmethyldimethoxysilane, 2-glycidoxyethylmethyldiethoxysilane, 3-glycidoxyethylmethyldimethoxysilane, 3 Glycidoxypropylethyldimethoxysilane, 3-glycidoxypropylethyldimethoxysilane, 3-glycidoxypropylethyldi Methoxysilane, 2-glycidoxypropylethyldiethoxysilane, 2-glycidoxypropylethyldimethoxysilane, 2- (3,4-ethoxycyclohexyl) ethyltrimethoxysilane, 2- (3,4- Ethoxycyclohexyl) ethyltriethoxysilane, ethyltrimethoxysilane, methyltriethoxysilane, 3-chloropropyltrimethoxysilane, 3-chloropropyltripropoxysilane, 2-chloropropyltributoxysilane, Phenyltrimethoxysilane, Phenyltriethoxysilane, 3,3,3, -trifluoropropyltrimethoxysilane, dimethyldimethoxysilane, 3-chloropropylmethyldimethoxysilane, methyltrichlorosilane, ethyltrichlorosilane , Phenyltrichlorosilane, vinyltrichlorosilane, hexyltrichlorosilane or decyltrichlorosilane.

The first method of preparing the dielectric according to the present invention is to prepare a mixed solution of water and alcohol of the substances represented by the above general formulas (1) to (3), preferably by adding an acid or a base catalyst to hydrolysis and condensation. The process of reacting. The dielectrics were prepared by gelling the silanes represented by the general formulas 1 and 2 through the continuous reaction of the hydrolysis and condensation reactions represented by the following Chemical Formula 1 to transfer the oxide having a high molecular weight from the sol state to the gel state. do.

As the organic monomer capable of intermolecular crosslinking in the material of Formula 2, when a vinyl group, glycidoxy group, and methacryl group are included, an organic polymerization reaction represented by Chemical Formula 3 is included. It is preferable when the organic group substituted in the silicon is vinyl group or methacryl group (preferably methacryloxy group). Let's do it. When glycidoxy group is included, organic polymerization may be preferably performed through a ring opening reaction using aluminum alkoxide, titanium alkoxide, zirconium alkoxide, amine group or the like.

<Formula 1>

[Hydrolysis]

M (OR) _x + xH ₂ O ↔M (OH) _x + xROH

[Condensation]

≡M (OH) + (HO) M≡ ↔ ≡MOM≡ + H ₂ O

              [Water condensation]

≡M (OR) + (HO) M≡↔ ≡M-O-M≡ + ROH

             [Alcohol condensation]

According to a second method of preparing a dielectric according to the present invention, reactants such as silicon chloride, methyltrichlorosilane, ethyltrichlorosilane, and phenyltrichlorosilane represented by the general formula (3) may be reacted with silicon alkoxide or alkyl ether, preferably metal chloride, For example, using a catalyst such as zirconium chloride, titanium chloride, tin chloride, and the like to prepare a dielectric of a polymer oxide structure through the reaction shown in the formula (2).

<Formula 2>

RSiCl ₃ + 0.75 Si (OR`) <sub>4-</sub> > [RSi <sub>1.75</sub> O <sub>3</sub> ] <sub>n</sub> + 3R`Cl

0.75SiCl ₄ + RSi (OR`) <sub>3-</sub> > [RSi <sub>1.75</sub> O <sub>3</sub> ] <sub>n</sub> + 3R`Cl

RSiCl ₃ + RSi (OR`) <sub>3-</sub> > [R <sub>2</sub> Si <sub>2</sub> O <sub>3</sub> ] <sub>n</sub> + 3R`Cl

2RSiCl ₃ + 3R` <sub>2</sub> O-> [R <sub>2</sub> Si <sub>2</sub> O <sub>3</sub> ] <sub>n</sub> + 6R`Cl

RSiCl ₃ + Si (OR`) <sub>4-</sub> > [RSi <sub>2</sub> O <sub>3</sub> -OR`] _n + 3R`Cl

SiCl ₄ + RSi (OR`) <sub>3-</sub> > [RSi <sub>2</sub> O <sub>3</sub> -Cl] <sub>n</sub> + 3R`Cl

R ′ in Formula 2 is a straight or branched alkyl group having 1 to 10 carbon atoms, and R is a straight or branched alkyl group having 1 to 10 carbon atoms or a hydrogen atom, a phenyl group, a phenyl alkoxy group, an amine group, a vinyl group, or a glycidoxy group. Or a substance containing a methacryl group or a fluoride atom substituted in a carbon chain having 4 to 8 carbon atoms.

The dielectric according to the present invention can be manufactured by the above two methods and can change the structure and properties of the final material according to the type of organic material added. Organics in the dielectric play a role as a network former and a network modifier in the network structure largely crosslinked with oxygen atoms. For example, organic materials that cannot bond with other organic monomers or inorganic networks, such as phenyl or amine groups, act as modifiers in the dielectric. If the added organic substance is an organic substance such as glycidoxy group, methacryl group, or vinyl group, it can act as a crosslinking agent to form a new bond through bonding with other organic monomers or other organic substances in the inorganic network structure. .

<Formula 3>

O ₃ ≡Si-R + R`-Si≡O <sub>3-</sub> > O <sub>3</sub> ≡Si-RR`-Si≡O ₃

O ₃ ≡Si-R + R + R + R`-Si≡O <sub>3-</sub> > O <sub>3</sub> ≡Si-RRRR`-Si≡O ₃

R, R` in Formula 3 is an organic monomer capable of crosslinking and has an unsaturated hydrocarbon such as a double bond or a triple bond or an unstable ring structure. Representative examples of such bonds or structures include vinyl groups, methacryl groups, glycidoxy groups, and the like.

Dielectrics obtained by the above two methods can be obtained a structure having the highest uniformity and flexibility when using a silicon alkoxide substituted with an organic material, the starting material can act as a crosslinking agent.

The dielectric according to the present invention has a structure different from that of a pure inorganic material made of a metal alkoxide in which an organic substance is not substituted. The dielectric has a microstructure having a smaller pore size and a smaller pore size than a pure inorganic material. If a large amount of pores are included in the material, a thick film cannot be obtained because these pores facilitate the breakdown of the material upon drying. In addition, the porous material can obtain a densified structure by viscous flow at a very high temperature close to the transition temperature, whereas the inorganic-organic hybrid material containing the organic group is a pore in which the organic group is formed by the inorganic network structure. By acting as a filler to limit the shrinkage that occurs during drying. Thus, dielectric compositions composed of inorganic-organic hybrid materials can achieve the desired final density at temperatures much lower than the transition temperatures of the metal oxides where densification occurs.

In addition, since the dielectric according to the present invention is prepared in a liquid phase, it is possible to easily and uniformly add inorganic or organic substances having special physical properties. In addition to the properties of existing dielectrics, additional properties may be imparted by the properties of inorganic or organic materials to be added.For example, when aluminum alkoxide, germanium alkoxide, titanium alkoxide and zirconium alkoxide are added, Intensity, photosensitivity, etc. can be increased. In addition, the addition of a silane or organic monomer substituted with a fluorine atom can reduce the dielectric constant and light loss. When the metal oxide particles of silica, boehmite, alumina, zirconia, or titania are dispersed and added in a solvent such as water or alcohol in the dielectric composition, the strength and dielectric constant of the inorganic-organic hybrid material may be increased. For example, the addition of alumina or boehmite particles can increase the abrasion resistance and strength of the dielectric, and the addition of a dispersion of titanium oxide particles and zirconium oxide particles can increase the dielectric constant.

The dielectric according to the present invention is transparent in the visible light region and can be densified even at a relatively low temperature firing. The starting concentration of organosilicon compounds in solution can vary, and in general, the greater the concentration of organosilicon compounds and the higher the molecular weight (ie, the higher the viscosity of the solution), the thicker the final thickness of the coated film. Since the viscosity of the solution of the organosilicon compound can be increased using the evaporation method, it is easy to control the thickness of the film.

In order for the dielectric to achieve high densification at a temperature of 200 degrees Celsius or less, the organisms substituted with silicon must fill the pores generated during the organic polymerization reaction or sintering. In general, the inorganic material formed from the liquid state is difficult to form a thick film due to cracks generated by these pores, while the organosilicon compound of the present invention can easily form a thick film without cracking.

When the raw material includes an organic polymerizable organic compound, a dielectric may be prepared through polymerization or crosslinking reaction between organic groups by irradiation of strong light such as heat or ultraviolet ray after addition of an appropriate initiator. Polymerization or crosslinking of these organisms can form a thick film without cracking at low firing temperatures of 200 degrees Celsius or less.

When the raw materials are reacted using an evaporation method, the alcohol present in the solution is removed and the viscosity of the solution increases as the condensation reaction between the silica particles proceeds. The thickness of the film can be controlled by increasing the viscosity through the evaporation method, and the longer the evaporation time, the higher the viscosity, thereby forming a thick film. The viscosity of the solution obtained by the evaporation method is very large, ranging from tens to tens of thousands of cp.

Since the dielectric according to the present invention is manufactured from a liquid state and easy to change in viscosity, it has an advantage of forming a film by a relatively easy coating process such as spin coating, dip coating, and bar coating. When using a raw material having low volatility and high viscosity, a thick and uniform coating film can be obtained even at low firing temperature.

Hereinafter, the content of the present invention will be described in more detail with reference to Examples. However, these examples are only presented to understand the content of the present invention, and the scope of the present invention should not be construed as being limited to these embodiments.

<Example 1>

A solution containing 0.1N HCl in a 1: 3 molar ratio to 3-glycidoxypropyltrimethoxysilane (GPTS) and a solution containing 0.1N HCl in a 1: 2 molar ratio to tetramethoxy orthosilicate (TMOS) After the mixture was stirred for 1 hour, the epoxy organic polymerization initiator of Table 1 was added in an amount of 3% by weight of silicon atoms, followed by stirring for 2 hours. The mixed solution was extracted in methanol in a solution while maintaining a temperature of 60 degrees Celsius in a vacuum evaporator. In this case, the viscosity of the solution may vary from 5 to 30,000 cp depending on the evaporation time.

The final solution (about 1000 cps) was coated onto the glass on which ITO was deposited using a spin coater and then heat treated at 150 degrees Celsius for 2 hours. In the case of coating a thick film having a high viscosity, a high thermal stress acts on the coated film during cooling, thereby gradually cooling stepwise to a temperature of 120, 80, and 40 degrees Celsius to prepare a final dielectric layer film.

Table 1 shows the thickness and transmittance of the dielectric layer according to the epoxy polymerization initiator. The thickness of the dielectric layer was different depending on the ratio of the inorganic composition and the organic composition, and the distribution of the film thickness was in the range of ± 1 μm with respect to the average thickness.

TABLE 1

Initiator  Film thickness (μm) (before evaporation) Film thickness (μm) (after evaporation) Permeability (%) (after evaporation) Aluminum 2-butoxide 4.5 15 90% Aluminum butoxyethoxide 4.5 14.5 90% Zirconium propoxide 3 9 89% Titanium ethoxide 3.5 9 88% 1-methyl imidazole 5 11 87% Boron trifluoride diethyl etherate 4 9 88%

<Example 2>

0.1N HCl was added to 3-methacryloxypropyltrimethoxysilane (MPTS) in a 1: 3 molar ratio, and 0.1N HCl was added to tetramethoxy orthosilicate (TMOS) in a 1: 2 molar ratio. After the solution was mixed and stirred for 1 hour, the acrylic organic polymerization initiator shown in Table 2 was added in an amount of 3% by weight of silicon atoms, followed by stirring for 2 hours. After coating the final solution (about 1000 cps) of which viscosity was adjusted by the method in Example 1 on the glass on which ITO was deposited using a dip coater, the baking of the film was carried out under the same conditions as in Example 1 above. A dielectric layer was obtained.

TABLE 2

Initiator  Film thickness (μm) (before evaporation) Film thickness (μm) (after evaporation) Permeability (%) (after evaporation) Benzoyl peroxide 5 10 88 2,2`-azobisisobutyronitrile 5 10 90

<Example 3>

0.1N HCl was added to 3-glycidoxypropyltrimethoxysilane (GPTS) in a 1: 3 molar ratio, stirred at room temperature for 1 hour, and then silica silica stabilized at pH 3 was added for 2 hours. Stirred. The amount of silica sol added at this time was such that the total organic composition and inorganic composition had a weight ratio of 6: 4. The epoxy organic polymerization initiator shown in Table 3 below was added in an amount of 3 wt% of the total silicon atoms, followed by stirring for 2 hours. The subsequent process was performed in the same manner as in Example 1.

TABLE 3

Initiator  Film thickness (μm) (before evaporation) Film thickness (μm) (after evaporation) Permeability (%) (after evaporation) Aluminum 2-butoxide 5 15 90% Aluminum butoxyethoxide 5 15 91% Zirconium propoxide 3.5 10 90% Titanium ethoxide 4 10 90% 1-methyl imidazole 4 12 90% Boron trifluorodiethyl etherate 4 10 92%

<Example 4>

3-methacryloxypropyltrimethoxysilane (MPTS) and perfluoroalkylsilane (PFAS) were selected as precursors for the preparation of the dielectric, and all procedures except the spin coating method were performed in the same manner as in Example 2. . The thickness of the dielectric layer was measured to be 5 탆 before evaporation and 10 탆 after, and the transmittance had a value of 85%.

Example 5

The final membrane was prepared in the same manner as in Example 1 using 3-glycidoxypropyltrimethoxysilane (GPTS) and phenyltrimethoxysilane (PTMS) as precursors for dielectric preparation. The thickness of the dielectric layer was measured to be 4 탆 before evaporation and 8 탆 after evaporation, and the transmittance had a value of 88%.

<Example 6>

The solution which added 3-methacryloxypropyl trimethoxysilane (MPTS) and diphenylsilanediol (DPDS) in a 2: 3 molar ratio was stirred for 30 minutes. Barium hydroxide (Ba (OH) ₂ ) was slowly added to the stirred solution as 5 wt% of the total silicon atoms as a catalyst of the reaction, and then reacted for 3 hours at a temperature of 60 degrees Celsius using a vacuum evaporator. The final solution was prepared in the final membrane as in Example 3 using a bar coater. The thickness of the dielectric layer was measured to be 8 μm before evaporation and 21 μm thereafter. The transmittance was 85%.

<Example 7>

Methyl silicon trichloride (MSTC) and tetraethyl orthosilicate (TEOS) were stirred for 30 minutes at a molar ratio of 4: 3 in a nitrogen atmosphere with low moisture. Iron chloride (FeCl ₃ ) as a catalyst of the reaction was added to 1% by weight of the total silicon, and then gelled at a temperature of 35 degrees Celsius for 24 hours to obtain a very high viscosity solution (about 10000 cp) to the same as in Example 3 The final membrane was prepared by the method. The thickness of the dielectric layer was measured to be 8 μm before evaporation and 20 μm after evaporation, and showed a transmittance of 84%.

Table 4 shows the breakdown voltage and dielectric constant of the dielectric layer prepared by the method described in Examples 1, 3 and 5.

TABLE 4

Withstand voltage Dielectric constant Example 1 > 1.5 kV 3.0 to 4.0 (@ 10 KHz) 2.7 to 4.0 (@ 1 MHz) Example 3 > 1.5 kV 3.3 to 4.0 (@ 10 KHz) 2.8 to 4.0 (@ 1 MHz) Example 5 > 1.5 kV 3.2 to 4.0 (@ 10 KHz) 3.0 to 4.0 (@ 1 MHz)

According to the results of Table 4 above, it can be seen that the withstand voltage of the dielectric prepared by the present invention has a value similar to that of the dielectric prepared from the glass paste used in the conventional plasma display panel.

The dielectric according to the present invention has characteristics similar to those of a conventional dielectric layer using glass paste, and a film can be formed in a relatively simple process by various coating methods. In addition, according to the present invention, the dielectric composition can be baked at a low temperature of 150 to 200 degrees Celsius without containing PbO, and the dielectric film can be easily formed from the liquid phase using a coating method.

Claims (14)

delete delete In the dielectric for plasma display panel, The compound represented by the following general formula (2) prepared by the sol-gel method and having an oxygen atom bonded to silicon in the structure or a network structure crosslinked with an organic monomer capable of crosslinking or modification is hydrolyzed in the presence of an acid or base catalyst and A dielectric for plasma display panel comprising an organosilicon compound formed through a condensation reaction. (OR ¹ ) _n Si- (XR ³ ) _m (n + m = 4) R ¹ is a straight or branched chain alkyl group having 1 to 10 carbon atoms or a hydrogen atom. X is a carbon chain having 3 to 6 carbon atoms. R ³ is a substance containing a vinyl group, a glycidoxy group, a methacryl group or a fluoride atom substituted in a carbon chain having 4 to 8 carbon atoms. n is a natural number of 1 to 4, and m is an integer between 0 and 3. In the dielectric for plasma display panel, The organic halogen silane represented by the following general formula (3) prepared by the sol-gel method and having a network structure crosslinked with an oxygen atom bonded to silicon or a crosslinked or modified organic monomer in the structure is reacted with a silicon alkoxide or alkyl ether. A dielectric for plasma display panel comprising an organosilicon compound obtained. R ⁴ SiCl ₃ R ⁴ is a linear or branched alkyl group having 1 to 10 carbon atoms or a hydrogen atom, a phenyl group, a phenyl alkoxy group, an amine group, a vinyl group, a glycidoxy group, a methacryl group or a 4 to 8 carbon chain in the carbon chain. Substituted Substituted Substances. delete A method for producing a dielectric for plasma display panel by dissolving a compound selected from the group of compounds represented by the following general formula (2) in a mixed solvent of water and alcohol and undergoing hydrolysis and condensation reaction in the presence of an acid or base catalyst. (OR ¹ ) _n Si- (XR ³ ) _m (n + m = 4) R ¹ is a straight or branched chain alkyl group having 1 to 10 carbon atoms or a hydrogen atom. X is a carbon chain having 3 to 6 carbon atoms. R ³ is a substance containing a vinyl group, a glycidoxy group, a methacryl group or a fluoride atom substituted in a carbon chain having 4 to 8 carbon atoms. n is a natural number of 1 to 4, and m is an integer between 0 and 3. Method for producing a dielectric for plasma display panel obtained by reacting an organohalogensilane selected from the group of compounds represented by the following general formula (3) with silicon alkoxide or alkyl ether: R ⁴ SiCl ₃ R ⁴ is a linear or branched alkyl group having 1 to 10 carbon atoms or a hydrogen atom, a phenyl group, a phenyl alkoxy group, an amine group, a vinyl group, a glycidoxy group, a methacryl group or a 4 to 8 carbon chain in the carbon chain. Substituted Substituted Substances. The method of claim 7, wherein Method for producing a dielectric for plasma display panel characterized in that the metal chloride as a catalyst Among the compounds represented by the following general formula (2), a plasma display panel dielectric comprising polymerizing homogeneous or heterogeneous compounds including organic monomers capable of crosslinking with organic groups substituted with silicon by adding free radicals and organic polymerization initiators. Manufacturing Method (OR ¹ ) _n Si- (XR ³ ) _m (n + m = 4) R ¹ is a straight or branched chain alkyl group having 1 to 10 carbon atoms or a hydrogen atom. X is a carbon chain having 3 to 6 carbon atoms. R <^3> is a vinyl group and methacryl group. n is a natural number between 1 and 3, and m is an integer between 1 and 3 The method of claim 9, The organopolymerization initiator is selected from the group consisting of aluminum alkoxide, zirconium alkoxide, titanium alkoxide, 1-methylimidazole, imidazole series, borontrifluoride diethyl isate, benzoyl peroxide, 2.2'-azobisisobutyronitrile Method for manufacturing a dielectric for plasma display panel, characterized in that selected A dielectric for plasma display panel characterized in that the compound represented by the following general formula (2) is polymerized by ring-opening reaction of a homogeneous or heterogeneous compound including an organic monomer capable of crosslinking with an organic group substituted with silicon by using a metal alkoxide or an amine group. Manufacturing Method (OR ¹ ) _n Si- (XR ³ ) _m (n + m = 4) R ¹ is a straight or branched chain alkyl group having 1 to 10 carbon atoms or a hydrogen atom. X is a carbon chain having 3 to 6 carbon atoms. R ³ is glycidoxy. n is a natural number between 1 and 3, and m is an integer between 1 and 3 The method according to claim 9 or 11, Organic group substituted in the silicon of the compound represented by Formula 2 is a method for producing a dielectric, characterized in that it comprises at least one or more selected from methyl, phenyl, amine, phenylalkoxy as a functional group to perform a modifier function. A plasma display panel produced by forming a dielectric film using a known coating method and firing the dielectric film according to claims 3 or 4 with heat or ultraviolet rays. The method according to any one of claims 6 to 11, The method of producing a dielectric, characterized in that it further comprises the step of reacting at least one compound represented by the general formula (2) and the silicon oxide particles dispersed in water or alcohol.