KR100463594B1 - A X-ray detector and a method for fabricating thereof - Google Patents

Abstract

The present invention relates to an x-ray image sensing device, and more particularly, to a structure for preventing disconnection of common wiring occurring in the x-ray image sensing device and a manufacturing method thereof.

In the X-ray image sensing device according to the present invention, when the common wiring is formed, an area of the contact portion contacting the upper storage electrode through the contact hole is large, and a plurality of contact holes are formed.

In this way, even when a part of the common wiring located below the contact hole is removed during the etching process for forming the contact hole, it is possible to prevent a defect that the common wiring is disconnected and to prevent contact failure due to the plurality of contact holes. It can have the advantage of improving the yield of the product.

Description

X-ray detector and a method for manufacturing the same

The present invention relates to an X-ray image sensing device using a TFT array process and a method of manufacturing the same.

Gin, widely used for medical purposes

Single-ray X-ray (X-ray) inspection method using an X-ray detection film, and to know the result had to pass a predetermined film print time.

However, in recent years, with the development of semiconductor technology, digital X-ray detectors (hereinafter referred to as X-ray image sensing devices) using thin film transistors have been researched and developed. The X-ray image sensing device has an advantage of using a thin film transistor as a switching device, and diagnosing a result by displaying an X-ray image on a screen in real time immediately after the X-ray is photographed.

Hereinafter, the configuration and operation of the X-ray image sensing device will be described.

FIG. 1 is a schematic diagram illustrating the structure and operation of the X-ray image sensing device 9, in which a substrate 1 is formed at a lower portion thereof, a thin film transistor 3, a storage capacitor 10, a pixel electrode 12, and luminous intensity. And the front film 2, the protective film 20, the high voltage electrode 24, the high voltage DC power supply 26, and the like.

The photoconductive film 2 forms an electrical signal, that is, electron and hole pair 6, internally in proportion to the signal intensity of an external electric wave or magnetic wave incident thereto. The photoconductive film 2 serves as a converter for converting an external signal, in particular, an X-ray into an electrical signal. The electron-hole pair 6 formed by the X-ray light is provided under the photoconductive film 2 by the voltage Ev applied from the high voltage DC power supply 26 to the high voltage electrode 24 positioned on the photoconductive film 2. Collected in the form of charge on the pixel electrode 12 is located, and is stored in the storage capacitor 10 formed with the capacitor electrode grounded from the outside. At this time, the charge stored in the storage capacitor 10 is turned on by the gate signal applied to the gate of the thin film transistor 3 and turned on through the data line connected to the source of the thin film transistor 3. It is sent to an image processing circuit to produce an x-ray image.

In order to detect and convert even weak X-ray light into charge in the X-ray image sensing device, the number of trap state densities trapping charge in the photoconductive film 2 is reduced, and the thin film transistor 3 is turned off. The leakage current when there is to be reduced.

2 is a plan view illustrating one pixel area of a conventional X-ray image sensing device.

As shown in the drawing, the gate wiring 32 is formed in the row direction and the data wiring 42 is formed in the column direction so as to intersect with the gate wiring 32.

An area defined by the intersection of the two wires 32 and 42 is called a pixel area, and in the pixel area, a ground wire spaced apart from the data wire 42 in parallel (hereinafter, referred to as a "common wire") 50 To form.

The thin film transistor T including the gate electrode 34, the active layer 38, the source electrode 46, and the drain electrode 48 is positioned at the intersection of the two wires 32 and 42.

A capacitor electrode 66 and a pixel electrode 72 are formed in the pixel region, and the capacitor electrode 66 is connected to the common wiring through a common wiring contact hole (which is configured twice through an etching process) 56 and 62. The pixel electrode 72 is in contact with the drain electrode 48.

The capacitor electrode 66 and the pixel electrode 72 are formed with an inorganic insulating film (not shown) thinly deposited therebetween to constitute the storage capacitor C. Referring to FIG.

Although not shown, the pixel electrode 72 serves as a current collecting electrode that collects charges so that holes generated in the photoconductive film (2 of FIG. 1) can accumulate in the storage capacitor C.

The function of the above-described X-ray image sensing device is summarized as follows.

Holes generated from the photoconductive film (not shown) are collected by the pixel electrode 72 and stored in the storage capacitor C configured together with the capacitor electrode 66.

Also, holes stored in the storage capacitor C move to the source electrode 46 through the drain electrode 48 and the pixel electrode 72 by the operation of the thin film transistor T, and pass through the data line 42. The circuit is processed by an external circuit (not shown) to represent an image.

Here, the electric charges that do not completely escape to the outside through the external circuit, that is, the remaining electric charge remaining in the storage capacitor C, are completely removed by the external circuit before detecting the new X-ray phase.

In the above-described process, the common wiring is made of the same material as the data wiring, but if molybdenum (Mo) is used, a problem of disconnection occurs when forming the common wiring contact hole.

In detail, the contact hole 62 formed on the common wiring 50 is larger than the line width of the common wiring 50 in order to increase the contact area between the common wiring 50 and the capacitor electrode 66. Very large. Therefore, the common wiring 50 may be damaged during the dry etching process for forming the contact hole 62, and may cause a problem such as disconnection.

Hereinafter, the manufacturing process of FIG. 2 described above with reference to the drawings will be described in detail.

3A to 3H are cross-sectional views taken along a cutting line III-III ′ of FIG. 2 and shown in a process sequence.

First, as shown in FIG. 3A, low-resistance aluminum (Al), aluminum alloy (mainly AlNd), and the like are deposited and patterned to form a gate wiring (32 in FIG. 2) and a gate electrode 34 extending from the gate wiring. ).

Next, an inorganic insulating material group including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) in front of the substrate 30 on which the Sangik gate wiring (32 of FIG. 2) and the gate electrode 34 are formed. In some embodiments, the gate insulating layer 36 is formed by depositing or applying one selected from the group of organic insulating materials including benzocyclobutene (BCB), acryl resin, and the like.

As shown in FIG. 3B, the amorphous silicon (A-Si: H) and the impurity amorphous silicon (n + a-Si) and the impurity amorphous silicon (n + a-Si) are continuously formed on the gate insulating film 36 while the insulating film is not exposed to the outside air. : H) is laminated in order and patterned to form active layer 38 and ohmic contact layer 40.

As shown in FIG. 3C, molybdenum (Mo) is deposited on the entire surface of the substrate 30 on which the active layer 38 and the ohmic contact layer 40 are formed, and then patterned to form the gate wiring (32 in FIG. 2). A data line 42 crossing each other to define a pixel region, a source electrode 46 connected to the gate electrode 34 extending above one side of the gate electrode 34, a drain electrode 48 spaced apart from the predetermined distance, and the pixel The common wiring 50 is formed at the center of the region and spaced apart from the data wiring 42 in parallel.

Subsequently, some of the ohmic contact layers 40 exposed between the source and drain electrodes 46 and 48 are etched to expose a portion of the active layer 38.

As shown in FIG. 3D, a silicon insulating film (SiN _x ) or oxide is formed on the entire surface of the substrate 30 on which the data lines 42, the source and drain electrodes 46 and 48, and the common wiring 50 are formed. Silicon (SiO ₂ )) is deposited by a predetermined method to form the first passivation layer 52.

Subsequently, the first passivation layer 52 is patterned to form a first drain contact hole 54 exposing a part of the drain electrode 48 and a first common line exposing most of the common wiring 50. The contact hole 56 is formed.

In this case, the contact holes 54 and 56 are formed through dry etching, and when the etching process is excessively performed due to a minute error, the common wiring 50 located below the first common wiring contact hole 56 is formed. Damage to the case and in severe cases the common wiring 50 may be disconnected.

In particular, in the case of molybdenum (Mo), there is a characteristic that the damage is greater than chromium (Cr).

Next, as illustrated in FIG. 3E, a transparent organic insulating film is deposited on the first passivation layer 52 to form a second passivation layer 58, and then patterned to correspond to the first drain contact hole. A drain contact hole 60 is formed, and a second common wiring contact hole 62 is formed corresponding to the first common wiring contact hole.

As described above, the reason for forming the first protective film 52 which is the inorganic insulating film under the second protective film 58 which is the organic insulating film is as follows.

That is, when the first passivation layer 52, which is a layer in direct contact with the exposed active layer 40, is formed of a silicon insulating layer, the interface property between the exposed active layer 38 and the first passivation layer 52 is excellent. The area trapping electrons becomes smaller, and therefore, the result is that the mobility of electrons becomes faster.

Therefore, an increase in leakage current due to the direct contact between the second protective film 58 made of the organic insulating film and the channel can be prevented.

As shown in FIG. 3F, a transparent conductive material such as indium tin oxide (ITO) is deposited and patterned on the entire surface of the substrate 30 on which the second passivation layer 58 is formed. The drain auxiliary electrode 64 in contact with each other and the capacitor electrode 66 in contact with the exposed common wiring 50 are formed.

The common wiring 50 is formed to pass a part of the pixel (FIG. 2), but the capacitor electrode 66 is wider than the common wiring 50 so as not to overlap with the data wiring 42. It overlaps with at least half of the area of the pixel electrode formed at.

Next, as shown in FIG. 3G, one of the above-described inorganic insulating material groups is deposited on the entire surface of the substrate 30 including the drain auxiliary electrode 64 and the capacitor electrode 66 to form a third passivation layer 68. ).

The third passivation layer 68 is patterned to form a third drain contact hole 70 exposing the drain auxiliary electrode 64.

As described above, the third drain contact hole 70 is formed to have a smaller area than the drain auxiliary electrode 64 already formed. Since the drain auxiliary electrode 64 is formed on the drain electrode 48, damage to the drain electrode 48 can be prevented when the third drain contact hole 70 is formed.

As shown in FIG. 3H, a transparent conductive layer including indium tin oxide (ITO) and indium zinc oxide (IZO) on the entire surface of the third passivation layer 68 having the third drain contact hole 70 formed therein. A metal is deposited and patterned to form a pixel electrode 72 on the source and drain electrodes 46 and 48 and on the pixel region P while contacting the exposed drain auxiliary electrode 64.

The pixel electrode 72 is formed to overlap the capacitor electrode 66 with the third passivation layer 68 interposed therebetween.

The passivation layer inserted between the pixel electrode 72 and the capacitor electrode 66 electrode forms a storage capacitor (C).

The storage capacitor electrode 66 is a first electrode, and the pixel electrode 72 also functions as a second electrode.

Although the following process is not shown, the photosensitive material is applied, and the photosensitive material is used as a transducer which receives an external signal and converts the signal into an electrical signal. The compound of amorphous selenium is converted to 100 by using an evaporator. Deposit at -500 μm thickness. In addition, an X-ray photosensitive material having a low dark conductivity and sensitive to an external signal, particularly X-ray photoconductivity, may be used, such as HgI ₂ , PbO, CdTe, CdSe, thallium bromide, cadmium sulfide, and the like. When the photosensitive material is exposed to X-ray light, electrons and hole pairs are generated in the photosensitive material according to the light intensity.

After application of the X-ray photosensitive material, the metal layer is formed thin enough to transmit transparent conductive electrodes or X-ray light as high voltage electrodes.

When the X-ray light is received while applying a voltage to the conductive electrode, electrons and hole pairs formed in the photosensitive material are separated from each other, and holes separated by the conductive electrode are collected in the pixel electrode 72 and stored in the storage capacitor C.

The X-ray image sensing device may be formed by the process as described above.

However, in the conventional X-ray image sensing device as described above, since the size of the contact hole relative to the line width of the common wiring is too large, a defect in which the lower common wiring is disconnected during the dry etching process for forming the contact hole occurs.

In addition, even if not disconnected, since the surface of the common wiring is severely damaged, the line resistance becomes very large.

First of all, since it is composed of a single hole, the problem of poor contact characteristics occurs.

The present invention has been proposed for the purpose of solving the above-mentioned problem, and the common wiring is partially configured to correspond to the portion where the contact hole is located, and the plurality of contact holes are also configured.

In this way, the common wiring can be prevented from being broken during the dry etching process, and the line resistance can be prevented from increasing.

1 is a cross-sectional view showing the operation of the X-ray image sensing device,

2 is an enlarged plan view showing one pixel area of a conventional X-ray image sensing device,

3A to 3H are cross-sectional views illustrating a manufacturing process of the X-ray image sensing device according to a conventional process sequence.

4 is a magnified plan view showing one pixel area of the X-ray image sensing device according to the present invention;

5A to 5H are cross-sectional views illustrating a process of manufacturing the X-ray image sensing device according to a conventional process sequence.

<Explanation of symbols for main parts of drawing>

102 gate wiring 104 gate electrode

108: active layer 110: ohmic contact layer

112: data wiring 116: source electrode

118: drain electrode 120: common wiring

130a, 130b, 130c, 130d: common wiring contact hole

132: drain auxiliary electrode 134: capacitor electrode

140: pixel electrode

An x-ray image sensing device according to a feature of the present invention for achieving the above object is a substrate; Gate wirings and data wirings intersecting perpendicularly to each other with an insulating film interposed therebetween to define pixel regions; A thin film transistor disposed at the intersection of the two wires, the thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode; A common wiring spaced apart in parallel with the data lines and extending in one direction and positioned in an arbitrary region of the pixel and configured to have a large area in part; A passivation layer formed on the thin film transistor and the common wiring and having a plurality of contact holes corresponding to a portion formed of a large area of the common wiring; A transparent capacitor electrode disposed on the pixel area and in contact with the common wiring through the plurality of contact holes; And a transparent pixel electrode disposed on the capacitor electrode with an insulating layer interposed therebetween and in contact with the drain electrode.

The protective film is formed by stacking an inorganic insulating film and an organic insulating film, wherein the inorganic insulating film is silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ), and the organic insulating film is a benzocyclobutene (BCB) and an acrylic resin ( resin).

A drain auxiliary electrode in contact with the drain electrode is further configured.

The common wiring is made of molybdenum (Mo).

According to an aspect of the present invention, there is provided a method of fabricating an X-ray image sensing device, including forming a gate line and a data line on a substrate to vertically cross each other with an insulating layer therebetween to define a pixel area; Forming a thin film transistor disposed at an intersection of the two wires, the thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode; Forming a common wiring spaced apart from the data wiring in one direction to extend in one direction and positioned at an arbitrary region of the pixel to have a large area; Forming a passivation layer formed on the thin film transistor and the common wiring, the protective film including a plurality of contact holes corresponding to a portion having a large area among the common wiring; Forming a capacitor electrode on the pixel area and in contact with the common wiring through the plurality of contact holes; And forming a pixel electrode on the capacitor electrode with an insulating film interposed therebetween and contacting the drain electrode.

The capacitor electrode and the transparent pixel electrode are formed of a transparent conductive metal including indium tin oxide (ITO) and indium zinc oxide (IZO).

Hereinafter, the configuration and operation according to the embodiment of the present invention will be described with reference to the accompanying drawings.

Example

The present invention is characterized in that the area of a part of the common wiring formed corresponding to the contact hole is configured to be wide, and a plurality of contact holes are formed.

4 is a plan view illustrating one pixel area of the X-ray image sensing device according to the present invention.

As shown in the drawing, the gate wiring 102 is formed in the row direction and the data wiring 112 is formed in the column direction so as to intersect the gate wiring 102.

An area defined by the intersection of the two wires 102 and 112 is called a pixel area, and a ground wire 120 (hereinafter referred to as a "common wire") 120 is formed in the pixel area to be spaced apart in parallel with the data wire 112. do.

The thin film transistor T including the gate electrode 104, the active layer 108, the source electrode 116, and the drain electrode 118 is positioned at the intersection of the two wires 102 and 112.

A capacitor electrode 134 and a pixel electrode 140 are formed in the pixel region, and the capacitor electrode 134 has a common wiring contact hole (two times are formed through an etching process) (130a, 130b, 130c, 130d,). The pixel 120 is in contact with the common wiring 120 through the drain auxiliary electrode 132, and the pixel electrode 140 is indirectly contacted with the drain electrode 118.

In this case, the common wiring 120 is configured to have a large area at an arbitrary position of the pixel area, and forms a plurality of contact holes 130a, 130b, 130c, and 130d correspondingly.

The capacitor electrode 134 and the pixel electrode 140 are formed with a thin insulating film (not shown) therebetween to constitute the storage capacitor C. Referring to FIG.

Although not shown, the pixel electrode 140 functions as a current collecting electrode that collects charges so that holes generated in the photoconductive film (2 of FIG. 1) can accumulate in the storage capacitor C.

As described above, as described above, by increasing the area of the common wiring 120 at an arbitrary position of the pixel, and configuring the common wiring contact holes 130a, 130b, 130c, and 130d corresponding thereto, During the dry etching process for forming the contact hole, even if a part of the common wiring 120 is damaged, the common wiring can be prevented from being disconnected, and the common wiring is formed by forming a plurality of contact holes. By increasing the contact area of the capacitor electrode and there is an advantage that can prevent the contact failure.

Hereinafter, a manufacturing process of an X-ray image sensing device according to the present invention will be described with reference to the drawings.

5A through 5H are cross-sectional views taken along the cutting line VV ′ of FIG. 3, and according to the process sequence of the present invention.

First, referring to FIG. 5A, low-resistance aluminum (Al), an aluminum alloy (mainly AlNd), and the like are deposited and patterned to form a gate wiring 104 (FIG. 4) and a gate electrode 104 extending from the gate wiring. ).

In this case, the gate electrode 104 may be formed as a double layer including an aluminum (Al) layer. The reason for this is as the material of the gate electrode 104, which has a low resistance to reduce the RC delay. Although this is mainstream, pure aluminum is chemically weak in corrosion resistance and causes a wiring defect problem due to hillock formation in a subsequent high temperature process, and thus a laminated structure may be applied as described above.

Next, an inorganic insulating material group including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ) on the entire surface of the substrate 100 on which the gate wiring (102 of FIG. 4) and the gate electrode 104 are formed. In some embodiments, the gate insulating layer 106 may be formed by depositing or applying one selected from the group of organic insulating materials including benzocyclobutene (BCB), acryl resin, and the like.

As shown in FIG. 5B, the amorphous silicon (A-Si: H) and the impurity amorphous silicon (n + a-Si) are continuously formed on the gate insulating film 106 while the insulating film is not exposed to the outside air. : H) is laminated in order and patterned to form active layer 108 and ohmic contact layer 110.

As shown in FIG. 5C, molybdenum (Mo) is deposited on the entire surface of the substrate 100 on which the active layer 108 and the ohmic contact layer 110 are formed, and then patterned to form the gate wiring (102 in FIG. 4). A data line 112 crossing each other to define a pixel area, a source electrode 116 connected to the gate electrode 104 and extending upward from one side of the gate electrode 104, a drain electrode 118 spaced apart from the predetermined distance, and the pixel The common wiring 120 is formed at the center of the region and spaced apart from the data wiring 112 in parallel.

Subsequently, some of the ohmic contact layers 110 exposed between the source and drain electrodes 116 and 118 are etched to expose a portion of the active layer 108.

As illustrated in FIG. 5D, a silicon insulating film (silicon nitride (SiN _x ) or silicon oxide () is formed on the entire surface of the substrate 100 on which the data lines 112, the source and drain electrodes 116 and 118, and the common wiring 120 are formed. SiO ₂ )) is deposited by a predetermined method to form the first passivation layer 121.

Subsequently, the first passivation layer 121 is patterned so that a portion of the first drain contact hole 122 exposing a part of the drain electrode 118 and a part of the common wiring 129 having a large area. A plurality of first common wire contact holes 124a and 124b are formed in the upper portion.

In this case, even if a part of the common wiring corresponding to the contact hole is removed during the dry etching for forming the first common wiring contact holes 124a and 124b, the common wiring has the advantage that disconnection does not occur.

Next, as illustrated in FIG. 5E, a transparent organic insulating film is deposited on the first passivation layer 121 to form and pattern a second passivation layer 126 to form a second pattern corresponding to the first drain contact hole. A drain contact hole 128 is formed, and a plurality of second common wiring contact holes 130a and 130b are formed to correspond to the plurality of first common wiring contact holes.

As described above, the reason for forming the first passivation layer 121 as the inorganic insulation layer under the second passivation layer 126 as the organic insulation layer is as follows.

This is as described above. That is, when the first passivation layer 121, which is a layer in direct contact with the exposed active layer 108, is formed of a silicon insulating layer, the interface property between the exposed active layer 108 and the first passivation layer 121 is excellent. The area trapping electrons becomes smaller, and therefore, the result is that the mobility of electrons becomes faster.

Therefore, an increase in leakage current due to direct contact between the second passivation layer 126 made of the organic insulating layer and the channel can be prevented.

As shown in FIG. 5F, a transparent conductive material such as indium tin oxide (ITO) is deposited and patterned on the entire surface of the substrate 100 on which the second passivation layer 126 is formed. A drain auxiliary electrode 132 in contact with each other and a capacitor electrode 134 in contact with the exposed common wiring 120 are formed.

The common wiring 120 is formed to pass a part of the pixel (FIG. 4), but the capacitor electrode 134 is wider than the common wiring 120 so as not to overlap with the data wiring 112, and then the process. It overlaps with at least half of the area of the pixel electrode formed at.

Next, as shown in FIG. 5G, one of the above-described organic insulating material groups is deposited on the entire surface of the substrate 100 including the drain auxiliary electrode 132 and the capacitor electrode 134 to form a third passivation layer 136. ).

The third passivation layer 136 is patterned to form a third drain contact hole 138 exposing the drain auxiliary electrode 132.

As described above, the third drain contact hole 138 is formed to have a smaller area than the drain auxiliary electrode 132 already formed. Since the drain auxiliary electrode 132 is formed on the drain electrode 118, damage to the drain electrode 118 may be prevented when the third drain contact hole 138 is formed.

As shown in FIG. 5H, a transparent conductive metal is deposited and patterned on the entire surface of the third passivation layer 136 to contact the exposed drain auxiliary electrode 132 and the upper portions of the source and drain electrodes 116 and 118. The pixel electrode 140 is formed on the pixel region P.

The pixel electrode 140 is formed to overlap with the capacitor electrode 134 with the third passivation layer 136 interposed therebetween.

The passivation layer inserted between the pixel electrode 140 and the capacitor electrode 134 electrode forms a storage capacitor (C).

The storage capacitor electrode 134 is a first electrode and the pixel electrode 140 also functions as a second electrode.

Although the following process is not shown, the photosensitive material is applied, and the photosensitive material is used as a transducer which receives an external signal and converts the signal into an electrical signal. The compound of amorphous selenium is converted to 100 by using an evaporator. Deposit at -500 μm thickness. In addition, an X-ray photosensitive material having a low dark conductivity and sensitive to an external signal, particularly X-ray photoconductivity, may be used, such as HgI ₂ , PbO, CdTe, CdSe, thallium bromide, cadmium sulfide, and the like. When the photosensitive material is exposed to X-ray light, electrons and hole pairs are generated in the photosensitive material according to the light intensity.

The X-ray image sensing device according to the embodiment of the present invention can be manufactured by the above process.

As described above, the X-ray image sensing device formed by the manufacturing method according to the present invention has the following effects.

First, a large area of the common wiring is formed at an arbitrary position passing through the pixel region, and a plurality of common wirings are formed corresponding to this portion, thereby preventing a defect in which the common wiring is disconnected during the dry etching process of forming the contact hole. By forming a plurality of contact holes, it is possible to prevent poor contact between the common wiring and the capacitor electrode in contact therewith.

Therefore, since the defect of the product can be minimized, there is an effect of improving the yield.

In addition, it is possible to improve the display performance of the X-ray image sensing device by reducing the line resistance of the common wiring.

Claims (12)

A substrate; Gate wirings and data wirings intersecting perpendicularly to each other with an insulating film interposed therebetween to define pixel regions; A thin film transistor disposed at the intersection of the two wires, the thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode; A common wiring spaced apart in parallel with the data lines and extending in one direction and positioned in an arbitrary region of the pixel and configured to have a large area in part; A passivation layer formed on the thin film transistor and the common wiring and having a plurality of contact holes corresponding to a portion formed of a large area of the common wiring; A transparent capacitor electrode disposed on the pixel area and in contact with the common wiring through the plurality of contact holes; A transparent pixel electrode positioned over the capacitor electrode with an insulating film interposed therebetween and in contact with the drain electrode; X-ray image sensing device comprising a. The method of claim 1, The passivation layer is an X-ray image sensing device composed of an inorganic insulating layer and an organic insulating layer laminated. The method of claim 2, And the inorganic insulating layer is silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ), and the organic insulating layer is benzocyclobutene (BCB) and an acrylic resin. The method of claim 1, And a drain auxiliary electrode in contact with the drain electrode. The method of claim 1, The common wiring is made of molybdenum (Mo) X-ray image sensing device. The method of claim 1, And the capacitor electrode and the transparent pixel electrode are transparent conductive metals including indium tin oxide (ITO) and indium zinc oxide (IZO). Forming a gate line and a data line on the substrate, the gate line and the data line defining a pixel area by crossing each other with an insulating film interposed therebetween; Forming a thin film transistor disposed at an intersection of the two wires, the thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode; Forming a common wiring spaced apart from the data wiring in one direction to extend in one direction and positioned at an arbitrary region of the pixel to have a large area; Forming a passivation layer formed on the thin film transistor and the common wiring, the protective film including a plurality of contact holes corresponding to a portion having a large area among the common wiring; Forming a capacitor electrode on the pixel area and in contact with the common wiring through the plurality of contact holes; Forming a pixel electrode on the capacitor electrode with an insulating film interposed therebetween and contacting the drain electrode; X-ray image sensing device manufacturing method comprising a. The method of claim 7, wherein The protective film is an X-ray image sensing device manufacturing method comprising an inorganic insulating film and an organic insulating film laminated. The method of claim 8, And the inorganic insulating layer is silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ), and the organic insulating layer is benzocyclobutene (BCB) and an acrylic resin (resin). The method of claim 7, wherein And a drain auxiliary electrode in contact with the drain electrode. The method of claim 7, wherein The common wiring is made of molybdenum (Mo) X-ray image sensing device manufacturing method. The method of claim 7, wherein The capacitor electrode and the transparent pixel electrode is a transparent conductive metal containing indium tin oxide (ITO) and indium zinc oxide (IZO) X-ray image sensing device manufacturing method.