KR100446382B1 - Apparatus for fringe field switching liquid crystal display - Google Patents
Apparatus for fringe field switching liquid crystal display Download PDFInfo
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- KR100446382B1 KR100446382B1 KR10-2001-0026913A KR20010026913A KR100446382B1 KR 100446382 B1 KR100446382 B1 KR 100446382B1 KR 20010026913 A KR20010026913 A KR 20010026913A KR 100446382 B1 KR100446382 B1 KR 100446382B1
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 230000000903 blocking effect Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 206010047571 Visual impairment Diseases 0.000 abstract description 13
- 238000002834 transmittance Methods 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0257—Reduction of after-image effects
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- Mathematical Physics (AREA)
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- Optics & Photonics (AREA)
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Abstract
본 발명은 프린지 필드 스위칭 액정표시장치에 관한 것으로, 액정층내에 프린지 필드를 형성하는 상대전극과 화소전극이 형성되어 있는 하부기판과 상부기판; 상기 하부기판 내면에 형성되어 있는 절연막 및 배향막; 상기 상부기판 내면에 형성되어 있는 착색층, 차광층, 오버코팅층 및 배향막;을 포함하여 구성된 프린지 필드 스위칭 액정표시장치에 있어서, 상기 화소전극은 슬릿 형상으로 상기 하부기판상의 절연막과 배향막 사이에 형성되어 있고, 상기 상대전극은 제 1상대전극과 제 2상대전극으로 구성되되, 상기 제1상대전극은 상기 하부기판 상면과 절연막 사이에 플레이트 형상으로 형성되어 있으며, 상기 제2상대 전극은 플레이트 형상으로 상기 상부기판상의 착색층과 오버코팅층 사이에 형성되어 있거나 또는 상기 상부기판 상면과 착색층 사이에 형성되어 있는 것이며, 전계 비대칭과 잔상개선은 물론 구동전압을 높이지 않고도 투과율도 향상되는 것이다.The present invention relates to a fringe field switching liquid crystal display device, comprising: a lower substrate and an upper substrate having a counter electrode and a pixel electrode forming a fringe field in a liquid crystal layer; An insulating film and an alignment film formed on an inner surface of the lower substrate; In a fringe field switching liquid crystal display device including a colored layer, a light blocking layer, an overcoating layer, and an alignment layer formed on an inner surface of the upper substrate, the pixel electrode is formed between the insulating layer on the lower substrate and the alignment layer in a slit shape. The counter electrode includes a first counter electrode and a second counter electrode, wherein the first counter electrode is formed in a plate shape between an upper surface of the lower substrate and an insulating film, and the second counter electrode is in a plate shape. It is formed between the colored layer on the upper substrate and the overcoating layer, or is formed between the upper surface and the colored layer on the upper substrate, and the transmittance is also improved without increasing the driving voltage, as well as electric field asymmetry and afterimage improvement.
Description
본 발명은 프린지 필드 스위칭 액정표시장치에 관한 것으로, 상부기판에 형성되는 상대전극의 위치를 변경하여 전계 비대칭과 잔상효과 개선은 물론 구동전압이 증가하지 않으면서도 투과율도 향상되는 프린지 필드 스위칭 액정표시장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fringe field switching liquid crystal display device, wherein the fringe field switching liquid crystal display device improves transmittance without increasing the driving voltage by improving the position asymmetry and the afterimage effect by changing the position of the counter electrode formed on the upper substrate. It is about.
프린지 필드 스위칭 액정표시장치는 인플레인 스위칭 액정표시장치의 낮은 개구율 및 투과율을 개선시키기 위하여 제안된 것으로, 상대전극과 화소전극을 투명 전도체로 형성하면서 상대전극과 화소전극과의 간격을 상,하기판 사이의 간격보다 좁게 형성하여 상대전극과 화소전극 상부에 프린지 필드(fringe filed)가 형성되도록 하는 것이다.The fringe field switching liquid crystal display is proposed to improve the low aperture ratio and the transmittance of the in-plane switching liquid crystal display. The gap between the counter electrode and the pixel electrode is formed by forming the counter electrode and the pixel electrode as a transparent conductor. A fringe field is formed on the counter electrode and the pixel electrode by forming a narrower gap than the gap between the counter electrode and the pixel electrode.
일반적으로 액정표시장치는 기본적으로 교류전압파형을 이용하는 구동방식을 사용하여야 하지만, 박막트랜지스터를 스위칭 소자로서 이용한 액정표시장치에 있어서는 기본적으로 박막트랜지스터를 개통시키기 위한 DC(Direct Current) 바이어스 전압등 액정이 교류전압 뿐만 아니라 DC 파형의 영향을 받을 수 밖에 없고, 또한 액정층내의 불순물 이온 성분, 상기 DC 바이어스 전압 및 여러가지 DC 성분들에 의해 잔상(Image Sticking) 현상이 발생한다.In general, a liquid crystal display device should basically use a driving method using an AC voltage waveform. However, in a liquid crystal display device using a thin film transistor as a switching element, a liquid crystal such as a direct current (DC) bias voltage for opening a thin film transistor is basically used. In addition to being affected by the DC waveform as well as the AC voltage, image sticking occurs due to the impurity ion component, the DC bias voltage, and various DC components in the liquid crystal layer.
더욱이, 프린지 필드 스위칭 액정표시장치는 상대전극과 화소전극 사이의 간격이 매우 협소한 관계로 다른 액정표시장치에 비해 강한 전계가 인가되므로 전계비대칭(Field Asymmetry) 특성과 위에서 열거한 특성에 의해 잔상특성이 매우 취약하다는 단점이 있었다.In addition, since the fringe field switching liquid crystal display device has a very small gap between the counter electrode and the pixel electrode, a strong electric field is applied as compared to other liquid crystal display devices, so that the afterimage characteristic is caused by the field asymmetry characteristic and the above-listed characteristics. The disadvantage was that it was very vulnerable.
따라서, 이와 같은 잔상을 개선하기 위하여 상대전극을 하부기판 뿐만 아니라 상부기판에도 형성하는 프린지 필드 스위칭 액정표시장치가 제안된 바 있었다.도 1은 종래 잔상을 개선하기 위하여 상대전극을 상부기판에도 형성시킨 프린지 필드 스위칭 액정표시장치이다.Accordingly, in order to improve the afterimage, a fringe field switching liquid crystal display device in which the counter electrode is formed not only on the lower substrate but also on the upper substrate has been proposed. FIG. 1 shows that the counter electrode is formed on the upper substrate in order to improve the afterimage. Fringe field switching liquid crystal display device.
종래 잔상 개선을 위한 프린지 필드 스위칭 액정표시장치는, 도 1에 도시된 바와 같이, 액정층(110)을 사이에 두고 하부기판(100)과 상부기판(120)이 대향 배치되어 있는데, 상기 하부기판(100) 내면에는 물론 상대전극(102)이 형성되어 있으며, 상기 상부기판(120) 내면에도 배향막(112)과 오버코팅막(116) 사이에 상대전극(114)이 형성되어 있다. 따라서, 종래 전계 비대칭 특성을 개선할 뿐만 아니라 DC 이온들이 하부기판에만 몰려 있던 것이 상부기판에도 일부 나뉘므로 잔상이 개선되는 특성을 가지게 되었다.In the fringe field switching liquid crystal display for improving the afterimage, the lower substrate 100 and the upper substrate 120 are disposed to face each other with the liquid crystal layer 110 interposed therebetween. The counter electrode 102 is formed on the inner surface of the (100), and the counter electrode 114 is formed between the alignment layer 112 and the overcoat layer 116 on the inner surface of the upper substrate 120. Therefore, the conventional electric field asymmetry characteristic is not only improved, but DC ions are concentrated only on the lower substrate, so that the afterimage is improved.
그러나, 종래 잔상 개선을 위한 프린지 필드 스위칭 액정표시장치는 잔상특성이 개선되기는 하였으나 다음과 같은 문제점이 있었다.However, the fringe field switching liquid crystal display for improving afterimages has improved afterimage characteristics, but has the following problems.
종래 잔상 개선을 위한 프린지 필드 스위칭 액정표시장치는 상부기판에도 상대전극이 형성되어 있으므로 전계 비대칭 특성은 개선할 수 있었으나, 이러한 프린지 필드 스위칭 액정표시장치는 강한 프린지 필드를 이용하여 액정들을 수평방향으로 트위스트시켜 구동을 하는 방식이므로 수평 필드 성분이 중요한 파라미터이다.또한, 종래 잔상 개선을 위한 프린지 필드 스위칭 액정표시장치는 상부기판에도 상대전극이 형성되어 있으므로 해서 수평 필드 성분이 수직 필드 성분에 비해 상대적으로 약하게 되어 액정을 구동시키기 위한 구동전압의 증가 및 투과율 손실을 가져오는 문제점이 있었다.In the fringe field switching liquid crystal display for improving afterimages, the counter electrode is formed on the upper substrate, thereby improving the asymmetry of the electric field. However, the fringe field switching liquid crystal display uses a strong fringe field to twist the liquid crystals in the horizontal direction. In addition, the horizontal field component is an important parameter because it is a driving method. In the conventional fringe field switching liquid crystal display for improving afterimages, the counter electrode is formed on the upper substrate so that the horizontal field component is relatively weaker than the vertical field component. There is a problem in that the driving voltage for driving the liquid crystal and the loss of transmittance.
이에, 본 발명에 따른 프린지 필드 스위칭 액정표시장치는 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 상부기판에 형성되는 상대전극의 위치를 변경하여 전계 비대칭 및 잔상효과는 물론 구동전압이 증가하지 않으면서도 투과율도 향상되는 프린지 필드 스위칭 액정표시장치를 제공함에 있다.Accordingly, the fringe field switching liquid crystal display device according to the present invention is devised to solve the problems of the prior art, and an object of the present invention is to change the position of the counter electrode formed on the upper substrate to drive the field asymmetry and the afterimage effect. It is an object of the present invention to provide a fringe field switching liquid crystal display device having improved transmittance without increasing a voltage.
도 1은 종래 잔상 개선을 위한 프린지 필드 스위칭 액정표시장치의 단면도.1 is a cross-sectional view of a fringe field switching liquid crystal display for improving afterimages.
도 2는 본 발명에 따른 프린지 필드 스위칭 액정표시장치의 단면도.2 is a cross-sectional view of a fringe field switching liquid crystal display device according to the present invention;
도 3은 본 발명의 다른 실시예에 따른 프린지 필드 스위칭 액정표시장치의 단면도.3 is a cross-sectional view of a fringe field switching liquid crystal display device according to another embodiment of the present invention.
도 4는 본 발명의 또 다른 실시예에 따른 프린지 필드 스위칭 액정표시장치의 단면도.4 is a cross-sectional view of a fringe field switching liquid crystal display device according to another embodiment of the present invention.
도 5는 종래 및 본 발명에 따른 프린지 필드 스위칭 액정표시장치의 시뮬레이션도.5 is a simulation diagram of a fringe field switching liquid crystal display device according to the related art and the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
200; 하부기판 202; 제1상대전극200; Lower substrate 202; First relative electrode
204; 절연막 206; 화소전극204; Insulating film 206; Pixel electrode
208,212; 배향막 210; 액정층208,212; Alignment layer 210; Liquid crystal layer
214; 제2상대전극 216; 오버코팅층214; Second relative electrode 216; Overcoating layer
218; 착색층 219; 차광층218; Colored layer 219; Shading layer
220; 상부기판220; Upper board
상기 목적을 달성하기 위한 본 발명에 따른 프린지 필드 스위칭 액정표시장치는, 액정층내에 프린지 필드를 형성하는 상대전극과 화소전극이 형성되어 있는 하부기판과 상부기판; 상기 하부기판 내면에 순차적으로 형성되어 있는 절연막 및 배향막; 상기 상부기판 내면에 순차적으로 형성되어 있는 착색층, 차광층, 오버코팅층 및 배향막;을 포함하여 구성된 프린지 필드 스위칭 액정표시장치에 있어서, 상기 화소전극은 슬릿 형상으로 상기 하부기판상의 절연막과 배향막 사이에 형성되어 있고, 상기 상대전극은 제 1상대전극과 제 2상대전극으로 구성되되, 상기 제1상대전극은 상기 하부기판 상면과 절연막 사이에 플레이트 형상으로 형성되어 있으며, 상기 제2상대 전극은 플레이트 형상으로 상기 상부기판상의 착색층과 오버코팅층 사이에 형성되어 있거나 또는 상기 상부기판 상면과 착색층 사이에 형성되어 있는 것을 특징으로 한다.A fringe field switching liquid crystal display device according to the present invention for achieving the above object comprises: a lower substrate and an upper substrate having a counter electrode and a pixel electrode forming a fringe field in the liquid crystal layer; An insulating film and an alignment film formed sequentially on the inner surface of the lower substrate; In the fringe field switching liquid crystal display device including a colored layer, a light shielding layer, an overcoating layer, and an alignment layer which are sequentially formed on the inner surface of the upper substrate, the pixel electrode has a slit shape between the insulating layer on the lower substrate and the alignment layer. The counter electrode includes a first counter electrode and a second counter electrode, wherein the first counter electrode is formed in a plate shape between an upper surface of the lower substrate and an insulating film, and the second counter electrode is in a plate shape. It is formed between the colored layer and the overcoat layer on the upper substrate or is formed between the upper surface and the colored layer of the upper substrate.
이하, 본 발명에 따른 프린지 필드 스위칭 액정표시장치를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, a fringe field switching liquid crystal display device according to the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 프린지 필드 스위칭 액정표시장치의 단면도이고, 도 3은 본 발명의 다른 실시예에 따른 프린지 필드 스위칭 액정표시장치의 단면도이고, 도 4는 본 발명의 또 다른 실시예에 따른 프린지 필드 스위칭 액정표시장치의 단면도이고, 도 5는 종래 및 본 발명에 따른 프린지 필드 스위칭 액정표시장치의 시뮬레이션도이다.2 is a cross-sectional view of a fringe field switching liquid crystal display device according to the present invention, FIG. 3 is a cross-sectional view of a fringe field switching liquid crystal display device according to another embodiment of the present invention, and FIG. 4 is according to another embodiment of the present invention. A cross-sectional view of a fringe field switching liquid crystal display device, and FIG. 5 is a simulation diagram of a fringe field switching liquid crystal display device according to the related art and the present invention.
본 발명에 따른 프린지 필드 스위칭 액정표시장치는, 도 2에 도시된 바와 같이, 하부기판(200)과 상부기판(220)이 액정층(210)을 사이에 두고 대향 배치되어 있으며, 상기 액정층(210)내에는 다수의 액정분자(미도시)가 충전되어 있다. 한편,상기 양 기판(200)(220)간의 간격을 액정 셀갭(Cell Gap)이라 한다.In the fringe field switching LCD according to the present invention, as shown in FIG. 2, the lower substrate 200 and the upper substrate 220 are disposed to face each other with the liquid crystal layer 210 interposed therebetween. A plurality of liquid crystal molecules (not shown) are filled in 210. Meanwhile, the gap between the two substrates 200 and 220 is called a liquid crystal cell gap.
여기서, 상기 하부기판(200) 상면에는 ITO와 같은 투명성 도전체로 구성되고 플레이트(Plate) 형상의 제1상대전극(202)이 형성되어 있으며, 상기 제1상대전극(202)상에는 실리콘질화물이나 실리콘산화물 등으로 형성되어 있고 상기 제1상대전극(202)과 하기 화소전극(206)을 전기적으로 절연시키는 절연막(204)이 형성되어 있다.Here, the upper surface of the lower substrate 200 is formed of a transparent conductor such as ITO, and a plate-shaped first relative electrode 202 is formed, and on the first relative electrode 202, silicon nitride or silicon oxide is formed. And an insulating film 204 that electrically insulates the first relative electrode 202 from the pixel electrode 206 described below.
또한, 상기 절연막(204)상에는 상기 제1상대전극(202)과 마찬가지로 ITO와 같은 투명성 도전체로 구성되고 슬릿 형상의 화소전극(206)이 형성되어 있으며, 상기 화소전극(206)과 상기 절연막(204)상에는 상기 액정층(210)내의 액정분자(미도시)를 일정하게 배열시키는 배향막(208)이 형성되어 있다.In addition, the pixel electrode 206 and the insulating layer 204 are formed on the insulating layer 204, similarly to the first relative electrode 202, and formed of a transparent conductor such as ITO, and have a slit-shaped pixel electrode 206. ), An alignment layer 208 is formed to constantly arrange liquid crystal molecules (not shown) in the liquid crystal layer 210.
한편, 상기 하부기판(100)상의 배향막(208) 이외에 상기 상부기판(220) 내면에도 배향막(212)이 형성되어 있으며, 상기 양 배향막(208)(212)은 상기 액정층(210)내에서 상호 대향하고 있다.Meanwhile, in addition to the alignment layer 208 on the lower substrate 100, an alignment layer 212 is formed on an inner surface of the upper substrate 220, and the alignment layers 208 and 212 are mutually formed in the liquid crystal layer 210. It is facing.
그리고, 상기 상부기판(220)에는 컬러(Color)를 실현하는 착색층(218)이 약 0.6㎛ 두께로 형성되어 있다. 여기서, 상기 착색층(218)은, 도 2에는 상세히 도시되지 않았지만, 레드(Red), 그린(Green) 및 블루(Blue), 즉, 빛의 3원색인 적녹청(RGB)층이 매트릭스 형태로 배열되어 있다.In addition, a color layer 218 for realizing color is formed on the upper substrate 220 to a thickness of about 0.6 μm. Here, although the colored layer 218 is not shown in detail in FIG. 2, red, green, and blue, ie, red, green, and blue (RGB) layers, which are three primary colors of light, have a matrix shape. Are arranged.
또한, 상기 착색층(218)에는 빛의 누설을 방지하여 액정표시장치의 콘트라스트를 향상시키는 블랙매트릭스, 즉 차광층(219)이 형성되어 있는데, 상기 차광층(219)으로는 광학밀도(Optical Density)가 3,5이상의 금속, 대표적으로는 크롬(Cr) 박막 또는 수지재료가 쓰인다. 여기서, 상기 차광층(219)이 크롬과 같은 금속 블랙매트릭스이면 그 두께를 0.08 ㎛ 이상으로, 수지 블랙매트릭스이면 그 두께를 1㎛ 이상으로 하는 것이 바람직하다.In addition, a black matrix, that is, a light blocking layer 219, is formed on the colored layer 218 to prevent leakage of light to improve contrast of the liquid crystal display. The light blocking layer 219 has an optical density. ) Is more than 3,5 metal, typically chromium (Cr) thin film or resin material is used. Here, when the light shielding layer 219 is a metal black matrix such as chromium, the thickness thereof is preferably 0.08 μm or more, and the resin black matrix is preferably 1 μm or more.
한편, 상기 착색층(218) 다음으로는 오버코팅막(216)과 배향막(212)이 순차적으로 형성되어 있다. 여기서, 상기 오버코팅막(216)은 그 두께를 0.5㎛ 이상으로 하는 것이 바람직하다.On the other hand, after the colored layer 218, the overcoat layer 216 and the alignment layer 212 are sequentially formed. In this case, the overcoat 216 preferably has a thickness of 0.5 μm or more.
또한, 상기 상부기판(220)에도 상대전극이 형성되어 있다. 여기서, 상기 상부기판(220)상의 상대전극, 즉, 제2상대전극(214)은 상기 착색층(218)과 오버코팅막(216) 사이에 형성되어 있다. 상기 제2상대전극(214)은 부유전극(Floating)이며, 이 또한 상기 화소전극(206)이나 제1상대전극(202)과 마찬가지로 ITO와 같은 투명성 도전체로 구성되어 투과율 향상에 이바지한다.In addition, a counter electrode is formed on the upper substrate 220. Here, the counter electrode on the upper substrate 220, that is, the second counter electrode 214 is formed between the colored layer 218 and the overcoat layer 216. The second relative electrode 214 is a floating electrode, and like the pixel electrode 206 and the first relative electrode 202, the second relative electrode 214 is made of a transparent conductor such as ITO, thereby contributing to the improvement of transmittance.
한편, 상기 제2상대전극은 배향막(212) 및 오버코팅층(216)을 사이에 두고 액정층(210)과 대향하고 있으므로 전계 형성시 수평성분을 상대적으로 강화시키며, 이로 인하여 구동전압을 상대적으로 떨어뜨린다.On the other hand, since the second counter electrode faces the liquid crystal layer 210 with the alignment layer 212 and the overcoating layer 216 interposed therebetween, the second component has a relatively high horizontal component when forming an electric field, thereby lowering the driving voltage. Drop.
또한, 도 3에 도시된 바와 같이, 제2상대전극(314)은 상부기판(320)면에 형성되어 있되 차광층(319)을 도포하도록 형성되어 있고, 배향막(312), 오버코팅층(316) 및 착색층(318)을 사이로 하여 액정층(310)과 대향하므로 전계 형성시 수평 성분을 상대적으로 더 강화시키며, 이로 인하여 구동전압을 상대적으로 더 떨어뜨린다.In addition, as shown in FIG. 3, the second relative electrode 314 is formed on the upper substrate 320 surface, but is formed to apply the light blocking layer 319, and the alignment layer 312 and the overcoating layer 316. And the liquid crystal layer 310 with the colored layer 318 interposed therebetween, thereby further strengthening the horizontal component when forming the electric field, thereby lowering the driving voltage relatively further.
한편, 도 4에 도시된 바와 같이, 제2상대전극(414)은 상부기판(420)상에 형성되어 있되, 차광층(419)을 도포하지 않고 상기 상부기판(420)과 차광층(419) 사이에 형성되어 있다. 상기와 같은 구조는 도 3에 도시된 구조와 비교하여 투과율 및 구동전압 효과가 동일유사하다.As shown in FIG. 4, the second relative electrode 414 is formed on the upper substrate 420, and the upper substrate 420 and the light blocking layer 419 are not applied to the light blocking layer 419. It is formed in between. Such a structure has the same transmittance and driving voltage effects as compared to the structure shown in FIG. 3.
상기와 같은 구조에 대한 실험 결과를 종래 구조와 비교하여 하기 표 1에 나타나 있다. 여기서, 상부기판에 상대전극이 형성되어 있지 아니한 경우(종래 1)와, 도 1에 도시된 제2상대전극이 배향막과 오버코팅층 사이에 형성되어 있는 경우(종래 2)와, 도 2에 도시된 제2상대전극이 오버코팅층과 착색층 사이에 형성되어 있는 경우(발명 1) 및 도 3 및 4에 도시된 제2상대전극이 상부기판면에 형성되어 있는 경우(발명 2)에 대하여 시뮬레이션한 각 구동전압에 대한 투과율 데이터이다.The experimental results for the above structure are shown in Table 1 below in comparison with the conventional structure. Here, the case where the counter electrode is not formed on the upper substrate (conventional 1), the second relative electrode shown in FIG. 1 is formed between the alignment film and the overcoating layer (conventional 2), and shown in FIG. Simulated angles when the second relative electrode is formed between the overcoating layer and the colored layer (Invention 1) and when the second relative electrode shown in FIGS. 3 and 4 is formed on the upper substrate surface (Invention 2) Transmittance data for the driving voltage.
한편, 도 5는 하기 표 1의 데이터를 그래프로 표현한 것으로, 가로축과 세로축을 각각 구동전압과 투과율로 한 것이며, 구제적인 조건은 다음과 같이 화소전극의 폭은 3㎛, 화소전극간 간격은 5㎛, 액정 셀갭(d)은 4㎛, 액정의 광학적 이방성(△n)은 0.0777으로 한 것이다.5 is a graph representing data of Table 1 below, wherein the horizontal axis and the vertical axis are the driving voltage and the transmittance, respectively, and specific conditions are as follows. Μm and liquid crystal cell gap d are 4 µm, and the optical anisotropy (Δn) of the liquid crystal is 0.0777.
본 발명의 원리와 정신에 위배되지 않는 범위에서 여러 실시예는 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 자명할 뿐만 아니라 용이하게 실시할 수 있다. 따라서, 본원에 첨부된 특허청구범위는 이미 상술된 것에 한정되지 않으며, 하기 특허청구범위는 당해 발명에 내재되어 있는 특허성 있는 신규한 모든 사항을 포함하며, 아울러 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해서 균등하게 처리되는 모든 특징을 포함한다.Various embodiments can be easily implemented as well as self-explanatory to those skilled in the art without departing from the principles and spirit of the present invention. Accordingly, the claims appended hereto are not limited to those already described above, and the following claims are intended to cover all of the novel and patented matters inherent in the invention, and are also common in the art to which the invention pertains. Includes all features that are processed evenly by the knowledgeable.
이상에서 살펴 본 바와 같이, 본 발명에 따른 프린지 필드 스위칭 액정표시장치는 다음과 같은 효과가 있다.As described above, the fringe field switching liquid crystal display according to the present invention has the following effects.
본 발명에 있어서는 상대전극이 상부기판에도 형성되어 있으므로 전계 비대칭(Field Asymmetry) 현상을 방지하며 액정층내의 불순물 이온이나 DC 특성으로 인해 하부기판에만 DC 이온들이 흡착되어 있는 것을 상부기판에 나뉘게 되어 잔상특성이 개선되는 것이다.In the present invention, since the counter electrode is formed on the upper substrate, it prevents field asymmetry and the DC ions are adsorbed only on the lower substrate due to impurity ions or DC characteristics in the liquid crystal layer. This is to be improved.
또한, 상부기판에 형성되는 상대전극의 위치를 변경하여 상기 효과 이외에구동전압을 증가하지 않으면서도 투과율도 향상되는 것이다.In addition, by changing the position of the counter electrode formed on the upper substrate, the transmittance is also improved without increasing the driving voltage.
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| KR20000060543A (en) * | 1999-03-17 | 2000-10-16 | 윤종용 | Liquid crystal displays and viewing-angle control methods in the same |
| JP2000356786A (en) * | 1999-06-16 | 2000-12-26 | Nec Corp | Liquid crystal display device |
| KR20010108998A (en) * | 2000-06-01 | 2001-12-08 | 주식회사 현대 디스플레이 테크놀로지 | Fringe field switching mode lcd device |
| KR20020076401A (en) * | 2001-03-28 | 2002-10-11 | 주식회사 현대 디스플레이 테크놀로지 | Fringe field switching mode lcd |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020088456A (en) | 2002-11-29 |
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