KR100364227B1 - Epoxy resin composition for sealing of semiconductor device - Google Patents
Epoxy resin composition for sealing of semiconductor device Download PDFInfo
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- KR100364227B1 KR100364227B1 KR1019970063465A KR19970063465A KR100364227B1 KR 100364227 B1 KR100364227 B1 KR 100364227B1 KR 1019970063465 A KR1019970063465 A KR 1019970063465A KR 19970063465 A KR19970063465 A KR 19970063465A KR 100364227 B1 KR100364227 B1 KR 100364227B1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/04—Epoxynovolacs
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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Abstract
본 발명은 오르소 노볼락계 에폭시 수지와 나프탈렌계 구조를 가지는 바이펑셔널계 에폭시 수지를 중량비율 2 : 8 내지 6 : 4로 혼합한 혼합물을 사용하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 나프탈렌 구조를 가진 저점도형 에폭시 수지와 오르소 크레졸 노볼락계 에폭시 수지의 적절한 혼합물을 도입함으로써 경화특성을 향상시키고, 무기 충전제를 고충전화 함으로써 흡습율 및 열팽창계수를 감소시키며 기계적 강도를 향상시킴과 동시에 반도체 소자 성형시 발생하는 보이드 발생을 억제함으로써 성형특성과 신뢰성이 우수한 반도체 소자 성형용 에폭시 수지 조성물을 제공하는 것이다.The present invention relates to an epoxy resin composition for sealing semiconductor elements using a mixture of an ortho novolak epoxy resin and a bifunctional epoxy resin having a naphthalene structure in a weight ratio of 2: 8 to 6: 4. Introducing a suitable mixture of low viscosity epoxy resin and ortho cresol novolak epoxy resin with structure improves curing characteristics, and high filling inorganic filler reduces moisture absorption and thermal expansion coefficient and improves mechanical strength It is to provide an epoxy resin composition for forming a semiconductor device excellent in molding characteristics and reliability by suppressing the generation of voids generated during device molding.
Description
본 발명은 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 오르소 크레졸 노볼락(Ortho Cresol Novolac)계 에폭시 수지와 나프탈렌(Naphthalene)구조를 가지는 바이펑셔널(Bifunctional)계 에폭시 수지로 이루어진 에폭시 혼합물, 페놀노볼락계 경화제, 경화촉진제, 변성실리콘오일 및 무기 충전제를 필수 성분으로 하는 고온 내크랙성, 경화특성 및 기계적 특성이 우수하며 신뢰성 및 성형특성이 우수한 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition, and more particularly, an epoxy mixture made of an ortho cresol Novolac epoxy resin and a bifunctional epoxy resin having a naphthalene structure, and a phenol. The present invention relates to an epoxy resin composition for sealing semiconductor devices having excellent high temperature crack resistance, curing properties, mechanical properties, and excellent reliability and molding properties including novolak-based curing agents, curing accelerators, modified silicone oils, and inorganic fillers.
최근 반도체 소자의 집적도는 나날이 향상되고 있으며, 이에 따른 배선의 미세화, 소자크기의 대형화 및 다층 배선화의 급속한 진전과 더불어 반도체 소자를 외부 환경으로 부터 보호하는 패키지(package)의 경우는 프린트 기판으로의 고밀도 실장, 즉 표면 실장이라는 관점에서 소형, 박형화가 가속되고 있다.In recent years, the degree of integration of semiconductor devices has been improved day by day, resulting in finer wiring, larger device size, and rapid development of multilayer wiring, and in the case of a package that protects the semiconductor devices from the external environment, the density of the printed circuit board is high. In terms of mounting, that is, surface mounting, compactness and thinning are accelerating.
이와 같이 대형 반도체 소자를 소형, 박형 패키지에 밀봉한 수지 밀봉형 반도체 장치에서는 외부환경의 온도 및 습도변화에 따른 열응력에 기인하여 패키지 크랙 또는 알루미늄 패드 부식발생 등의 고장 발생의 빈도가 매우 높아지게 된다.As described above, in a resin-sealed semiconductor device in which a large semiconductor device is sealed in a small and thin package, the frequency of failure such as package crack or corrosion of an aluminum pad may increase due to thermal stress caused by changes in temperature and humidity of the external environment. .
따라서, 밀봉용 에폭시 수지 성형재료의 고신뢰성화가 강하게 대두되어 저응력화를 위한 탄성률을 낮추는 방법, 열팽창계수를 낮추는 방법 또는 고순도 경화제의 사용, 이온 포착제(Ion Trapper)적용에 의한 불순물의 저하 및 무기 충전제를 고충전하여 수분 흡습량을 저하시키는 방법이 있다.Therefore, the high reliability of the sealing epoxy resin molding material is so strong that the method of lowering the modulus of elasticity for low stress, the method of lowering the coefficient of thermal expansion or the use of a high-purity curing agent, the reduction of impurities by applying the ion trapper and There is a method of high filling the inorganic filler to reduce the moisture absorption.
탄성율을 낮추는 방법으로서는 일본국 특개소 63-1894 및 특개평5-291436에 각종 고무 성분을 사용하는 열적안정성이 우수한 실리콘 중합체를 배합, 개질시킨 에폭시 수지 성형재료가 제안되어 있는데, 이 방법은 실리콘 오일이 성형재료의 기저 수지인 에폭시 수지 및 경화제와 상용성이 없기 때문에 기저 수지중에 미립자가 분산되어 내열성을 유지한체 저탄성율을 이룰 수 있다. 또한, 저열팽창화에 대해서는 열팽창계수가 낮은 무기 충전제의 충전량을 증가시키는 방법이 바람직한데 다만, 무기 충전제의 충전량 증가에 따른 에폭시 수지 성형재료의 저유동성과 고탄성이 문제가 되나 일본국 특개소 64-11355에서는 구형 충전제를 그 입도 분포와 입자 크기의 조절을 통하여 다량 배합할 수 있는 기술이 소개되어 있다.As a method of lowering the modulus of elasticity, an epoxy resin molding material in which Japanese polymers No. 63-1894 and Japanese Patent Laid-Open Nos. Hei 5-291436 are blended and modified with a silicone polymer having excellent thermal stability using various rubber components has been proposed. Since there is no compatibility with the epoxy resin and hardening | curing agent which are base resins of this molding material, microparticles | fine-particles are disperse | distributed in a base resin, and the low elastic modulus which maintains heat resistance can be achieved. In addition, for low thermal expansion, a method of increasing the filling amount of an inorganic filler having a low coefficient of thermal expansion is preferable.However, the low flowability and high elasticity of the epoxy resin molding material are increased due to the increase of the filling amount of the inorganic filler. 11355 introduces a technique for the formulation of large amounts of spherical fillers by controlling their particle size distribution and particle size.
본 발명은 나프탈렌 구조를 가진 저점도형 에폭시 수지와 오르소 노볼락계 에폭시 수지의 혼합물을 도입하여 경화특성이 우수하며, 무기 충전제를 고충전화 함으로써 흡습율 및 열팽창계수를 감소시키고 기계적 강도를 향상시킴과 동시에 반도체 소자 성형시 발생하는 보이드(Void)발생을 억제함으로써 성형특성과 신뢰성이 우수한 반도체 소자 성형용 에폭시 수지 조성물을 제공하는 것이다.The present invention introduces a mixture of a low viscosity epoxy resin having an naphthalene structure and an ortho novolak-based epoxy resin, and has excellent curing properties.As a high filling inorganic filler, moisture absorption and thermal expansion coefficient are reduced and mechanical strength is improved. At the same time, by suppressing the generation of void (Void) generated during the semiconductor device molding to provide an epoxy resin composition for forming a semiconductor device excellent in molding characteristics and reliability.
본 발명은 에폭시 수지, 경화제, 경화촉진제, 변성실리콘 오일 및 무기 충전제를 필수성분으로 하여 이루어지는 에폭시 수지 조성물에 있어서, 상기 에폭시 수지는 하기 화학식 1과 화학식 2로 표시되며 중량비율 2 : 8 내지 6 : 4로 혼합된 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것이다.The present invention is an epoxy resin composition comprising an epoxy resin, a curing agent, a curing accelerator, a modified silicone oil and an inorganic filler as essential components, wherein the epoxy resin is represented by the following formula (1) and formula (2), the weight ratio of 2: 8 to 6: It is related with the epoxy resin composition for semiconductor element sealing characterized by the above-mentioned.
즉, 본 발명은 하기 화학식 1 로 표시되는 오르소 노볼락계 에폭시 수지와 화학식 2로 표시되는 나프탈렌계 구조를 가지는 바이펑셔널계 에폭시 수지를 중량비율 2 : 8 내지 6 : 4로 혼합한 에폭시 수지 혼합물과That is, the present invention is an epoxy resin mixture obtained by mixing an ortho novolak epoxy resin represented by Formula 1 below and a bifunctional epoxy resin having a naphthalene structure represented by Formula 2 at a weight ratio of 2: 8 to 6: 4. and
경화제, 경화촉진제, 변성실리콘 오일 및 무기충전제를 필수 성분으로 하고 무기충전제의 함량을 전체 조성물에 대하여 82중량% 이상 함유하는 것을 특징으로 한다.A hardening agent, a hardening accelerator, a modified silicone oil, and an inorganic filler are essential components, and the inorganic filler is contained in an amount of 82 wt% or more based on the total composition.
이하 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.
본 발명에서 사용한 에폭시 수지는 화학식 1 및 2로 나타낼 수 있는 에폭시 수지를 중량비율 2 : 8 내지 6 : 4로 하는 것이 바람직한데, 만일 중량비가 2 : 8 미만인 경우, 예를들면 0 : 10 등의 경우에는 경화특성이 저하되어 성형불량의 발생 가능성이 높고, 6 : 4보다 큰 경우 예를들면 9 : 1 등의 경우에는 내크랙성이 저하된다. 또한, 에폭시 수지 혼합물을 이루는 각각의 에폭시 수지의 당량은 190 내지 250 및 120 내지 180인 고순도의 에폭시 수지가 요구된다.In the epoxy resin used in the present invention, it is preferable that the epoxy resins represented by the formulas (1) and (2) have a weight ratio of 2: 8 to 6: 4, and if the weight ratio is less than 2: 8, for example, 0:10, etc. In the case, the curing property is lowered, so that the occurrence of molding failure is high, and in the case of larger than 6: 4, for example, in the case of 9: 1, the crack resistance is lowered. In addition, a high purity epoxy resin is required in which the equivalent of each epoxy resin constituting the epoxy resin mixture is 190 to 250 and 120 to 180.
본 발명에서 에폭시 수지 혼합물은 전체 조성물에 대하여 3.5 내지 9.0중량% 사용한다.In the present invention, the epoxy resin mixture is used 3.5 to 9.0% by weight based on the total composition.
본 발명에서 사용된 경화제는 2개 이상의 수산기를 갖고 수산기 당량이 100 내지 200인 통상의 페놀 노볼락 수지, 크레졸 노볼락 수지, 자일록(Xylok)수지, 디사이클로펜타디엔 수지등이 사용될 수 있으며, 이를 단독 또는 2종 이상 사용할 수있으나, 경제성 및 성형성의 관점에서 페놀 노볼락형 수지를 경화제 전체의 50중량% 이상 사용하는 것이 바람직하다. 에폭시 수지와 경화제의 조성비는 수산기 당량에 대한 에폭시 당량이 0.8 내지 1.2인 것이 바람직하며, 경화제의 사용량은 전체 조성물에 대하여 2.0 내지 6.5중량% 사용하는 것이 바람직하다.The curing agent used in the present invention may be used a conventional phenol novolak resin, cresol novolak resin, Xylok resin, dicyclopentadiene resin and the like having two or more hydroxyl groups having a hydroxyl equivalent of 100 to 200, Although these may be used alone or in combination of two or more, it is preferable to use at least 50% by weight of the entire phenolic novolak-type resin from the viewpoint of economy and moldability. It is preferable that the epoxy equivalent of an epoxy resin and a hardening | curing agent is 0.8-1.2 with respect to the hydroxyl equivalent, and the usage-amount of hardening | curing agent is used 2.0-6.5 weight% with respect to the whole composition.
본 발명에 사용된 경화 촉진제는 상기 에폭시와 경화제의 경화반응을 촉진하기 위해 필요한 성분으로, 예를들면 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류, 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류, 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류, 테트라페닐포스포니움테트라페닐보레이트, 트리페닐포스핀테트라페닐보레이트 등의 테트라페닐보론염 등이 있으며 이중 1종 또는 2종 이상을 병용해도 좋으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 내지 0.3중량%이다.The curing accelerator used in the present invention is a component necessary for promoting the curing reaction of the epoxy and the curing agent, for example benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol, and the like. Imidazoles such as tertiary amines, 2-methylimidazole and 2-phenylimidazole, organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine, tetraphenylphosphonium tetraphenylborate And tetraphenylboron salts such as triphenylphosphine tetraphenylborate and the like, and may be used alone or in combination of two or more thereof, and the amount of use thereof is 0.1 to 0.3% by weight based on the total epoxy resin composition.
본 발명에 사용된 변성실리콘 오일로는 내열성이 우수한 실리콘 중합체가 바람직하며 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대해 0.5 내지 1.5중량% 사용할 수 있다. 다만, 실리콘 오일을 1.5중량%를 초과하여 사용하는 경우에는 표면 오염이 발생하기 쉽고, 레진 블리드가 길어질 우려가 있으며, 0.5중량% 미만으로 사용하는 경우에는 충분한 저탄성율을 얻을 수 없게 된다.As the modified silicone oil used in the present invention, a silicone polymer having excellent heat resistance is preferable, and a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, and the like are mixed in one kind or two or more kinds. 0.5 to 1.5% by weight may be used based on the epoxy resin composition. However, when the silicone oil is used in excess of 1.5% by weight, surface contamination is likely to occur, and the resin bleed may be long, and when used in less than 0.5% by weight, sufficient low modulus of elasticity may not be obtained.
본 발명에서 사용되는 무기 충전제는 그 평균 입자가 0.1 내지 35.0㎛인 용융 또는 합성실리카를 사용하는 것이 바람직하며 충전량은 조성물 전체에 대하여 82중량% 이상 사용하여야 한다. 82중량% 미만으로 무기충전제를 사용하는 경우에는 충분한 강도와 저열 팽창화를 실현할 수 없으며 또한, 수분의 침투가 용이해져 신뢰성 특성에 치명적이 된다. 다만, 무기충전량 상한선은 성형성을 고려하여 선정하는 것이 바람직하며, 89중량% 미만을 사용하는 것이 바람직하다. 또한, 고순도의 제품으로 분쇄형과 구형의 실리카를 조성비 7 : 3 내지 0 : 10인 혼합형태로 하는 것이 바람직하다.Inorganic fillers used in the present invention preferably use molten or synthetic silica having an average particle of 0.1 to 35.0 µm, and the filling amount should be 82% by weight or more based on the total composition. When the inorganic filler is used in an amount of less than 82% by weight, sufficient strength and low thermal expansion cannot be realized, and moisture permeation becomes easy, and it becomes fatal to reliability characteristics. However, the upper limit of the amount of inorganic charge is preferably selected in consideration of moldability, it is preferable to use less than 89% by weight. In addition, it is preferable to use a mixture of pulverized and spherical silica having a composition ratio of 7: 3 to 0:10 as a high purity product.
또한, 본 발명의 성형재료에는 브로모 에폭시의 난연제, 삼산화안티몬, 수산화알루미늄, 오산화안티몬 등의 난연조제, 고급지방산, 고급지방산금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제, 에폭시실란, 아미노실란, 알킬실란 등의 커플링제를 필요에 따라 사용할 수 있다.In addition, the molding materials of the present invention include flame retardants of bromo epoxy, flame retardants such as antimony trioxide, aluminum hydroxide, antimony pentoxide, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, carbon black, organic and inorganic dyes, and the like. Coupling agents, such as a coloring agent, an epoxysilane, an aminosilane, and an alkylsilane, can be used as needed.
이상과 같은 원재료를 사용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로, 상술한 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융혼련하여, 냉각, 분쇄과정을 거쳐 최종 분말제품을 얻는 방법이 사용되고 있다.As a general method for producing an epoxy resin composition using the raw materials described above, uniformly and sufficiently mixed the above-mentioned compounding amount using a Henschel mixer or a Rodige mixer, melt-kneading with a roll mill or kneader to cool and grind. A method of obtaining the final powder product is used.
본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는방법으로서는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되지만, 인젝션(Injection)성형법이나 캐스팅(Casting) 등의 방법으로도 성형가능하다.As a method of sealing a semiconductor element using the epoxy resin composition obtained in the present invention, a low pressure transfer molding method is most commonly used, but it can also be molded by an injection molding method or a casting method.
이하 본 발명을 실시예를 들어 더욱 상세히 설명하고자 하나, 본 발명이 하기 실시예에 의하여 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by the following Examples.
실시예 1∼2Examples 1-2
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위하여 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀믹서를 이용, 균일하게 혼합하여 분말상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융 혼련한 뒤 냉각 및 분쇄 과정을 거쳐 에폭시 수지 조성물을 제조하였다.In order to prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. Epoxy resin composition was prepared by melt kneading at 100 ° C. for 7 minutes, followed by cooling and grinding.
이와 같이 하여 수득된 에폭시 수지 조성물에 대하여 물성 및 신뢰성을 평가하였으며, 신뢰성 시험을 위한 TSOP형 반도체 소자 성형시에는 MPS(Multi Plunger System)성형기를 이용하여 175℃에서 60초간 성형시킨 후 175℃에서 6시간 동안 후경화시켜 TSOP형 반도체 소자를 제작하였다.The properties and reliability of the epoxy resin composition thus obtained were evaluated, and when molding a TSOP-type semiconductor device for reliability test, a molding was performed at 175 ° C. for 60 seconds using an MPS (Multi Plunger System) molding machine, followed by 6 at 175 ° C. After curing for a time to produce a TSOP-type semiconductor device.
본 발명에 의한 에폭시 수지 조성물의 물성 및 신뢰성 시험결과를 표 2에 나타내었다. 신뢰성 시험은 열충격 시험에서의 패키지 크랙 발생정도로 나타내었다.Table 2 shows physical and reliability test results of the epoxy resin composition according to the present invention. Reliability tests were indicated by the degree of package cracking in the thermal shock test.
물성평가 방법Property evaluation method
1)스파이럴 플로우(Spiral Flow)1) Spiral Flow
EMMI규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70kgf/㎠에서 유동길이를 평가하였다.The mold was manufactured based on the EMMI standard and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 kgf / cm 2.
2)유리전이온도(Tg)2) glass transition temperature (Tg)
TMA(Thermomechanical Analyzer)로 평가하였다.It was evaluated by TMA (Thermomechanical Analyzer).
3)열팽창계수(α)3) coefficient of thermal expansion (α)
ASTM D696에 의해 평가하였다.Evaluation was made by ASTM D696.
4)굴곡강도 및 굴곡탄성율4) Flexural Strength and Flexural Modulus
UTM(Universal Test Machine)을 이용하여 ASTM D190에 의하여 평가하였다.It was evaluated by ASTM D190 using a universal test machine (UTM).
5)내크랙성 평가(신뢰성 시험)5) Crack resistance evaluation (reliability test)
프리컨디션(Precondition)후 열충격 환경시험기(Temperature Cycle Test)에서 1,000사이클 경과후, 비파괴 검사기인 SAT(Scanning Acoustic Tomograph)로 크랙발생 유무를 평가하였고, 프리컨디션 조건과 열충격시험은 다음과 같다.After Precondition After 1,000 cycles in the Thermal Shock Environmental Tester, a nondestructive tester, SAT (Scanning Acoustic Tomograph), evaluated the occurrence of cracks, and the preconditioning condition and thermal shock test were as follows.
①프리컨디션 조건① Precondition
에폭시 수지 조성물로 제조한 TSOP형 반도체 소자를 125℃에서 24시간 건조시킨 후 20 사이클의 열충격시험을 거쳐 다시 85℃, 65% 상대습도 조건하에서 168시간 동안 방치시킨 후 235℃에서 10초동안 IR 리플로우를 3회 통과시켜 1차로 프리컨디션 조건하에서의 패키지 크랙발생 유무를 평가한다. 이 단계에서 크랙이 발생되었을 경우, 다음 단계인 1,000사이클의 열충격 시험은 진행하지 않는다.TSOP-type semiconductor device made of epoxy resin composition was dried for 24 hours at 125 ° C, then subjected to 20 cycles of thermal shock test, and then left for 168 hours under 85 ° C and 65% relative humidity conditions, and then IR ripple for 10 seconds at 235 ° C. Pass the rows three times to evaluate package cracks under preconditions first. If cracks occur at this stage, the next stage, the 1,000 cycle thermal shock test, is not conducted.
②열충격 시험② Thermal Shock Test
앞서의 프리컨디션 조건을 통과한 반도체 패키지를 -65℃에서 10분, 25℃에서 5분, 150℃에서 10분씩 방치하는 것을 1사이클로 하여 1,000 사이클을 진행한 후 비파괴검사기인 SAT를 이용하여 내부 및 외부 크랙을 평가한다.After 1,000 cycles, the semiconductor package that passed the preconditions was left for 10 minutes at -65 ° C, 5 minutes at 25 ° C, and 10 minutes at 150 ° C for 1 cycle. Evaluate external cracks.
비교예 1∼2Comparative Examples 1 and 2
다음 표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며 각 물성 및 신뢰성 평가결과를 표 2에 나타내었다. 단위는 중량%로 나타내었다.As shown in Table 1, each component was weighed out according to a given composition to prepare an epoxy resin composition in the same manner as in Example, and the results of evaluation of physical properties and reliability are shown in Table 2. Units are expressed in weight percent.
상기 표 2에 나타난 바와 같이 본 발명에 의한 수지 조성물은 비교예에 비하여 신뢰성 및 성형성면에서 월등히 우수한 특성을 나타내고 있음을 알 수 있다.As shown in Table 2, it can be seen that the resin composition according to the present invention exhibits excellent characteristics in terms of reliability and moldability as compared with the comparative examples.
본 발명에 의한 에폭시 수지는 나프탈렌 구조를 가진 저점도형 에폭시 수지와 오르소 크레졸 노볼락계 에폭시 수지의 혼합물을 사용함으로써 경화특성이 우수하며, 무기 충전제를 고충전화하여 흡습율 및 열팽창계수를 감소시키고, 기계적 강도를 향상시킴과 동시에 반도체 소자 성형시 발생하는 보이드 발생을 억제함으로써 성형특성과 신뢰성이 우수한 반도체 소자 성형용 에폭시 수지 조성물 수득할 수 있다.The epoxy resin according to the present invention has excellent curing properties by using a mixture of a low viscosity epoxy resin having a naphthalene structure and an ortho cresol novolac epoxy resin, and has a high filling inorganic filler to reduce moisture absorption and thermal expansion coefficient, The epoxy resin composition for molding a semiconductor device excellent in molding characteristics and reliability can be obtained by improving the mechanical strength and suppressing the generation of voids generated during molding of the semiconductor device.
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JPH03195725A (en) * | 1989-12-25 | 1991-08-27 | Sumitomo Bakelite Co Ltd | Resin composition |
JPH03197526A (en) * | 1989-12-26 | 1991-08-28 | Sumitomo Bakelite Co Ltd | Resin composition |
KR920018141A (en) * | 1991-03-29 | 1992-10-21 | 카나가와 치히로 | Epoxy Resin Compositions and Semiconductor Devices |
US5166228A (en) * | 1990-08-14 | 1992-11-24 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions containing polysubstituted novolac epoxy resins and naphthylene based phenolic resin curing agents and semiconductor devices encapsulated therewith |
KR0139272B1 (en) * | 1993-12-31 | 1998-05-01 | 김충세 | Epoxy resin composition and sealing method of semiconductor device using same |
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JPH03195725A (en) * | 1989-12-25 | 1991-08-27 | Sumitomo Bakelite Co Ltd | Resin composition |
JPH03197526A (en) * | 1989-12-26 | 1991-08-28 | Sumitomo Bakelite Co Ltd | Resin composition |
US5166228A (en) * | 1990-08-14 | 1992-11-24 | Shin-Etsu Chemical Co., Ltd. | Epoxy resin compositions containing polysubstituted novolac epoxy resins and naphthylene based phenolic resin curing agents and semiconductor devices encapsulated therewith |
KR920018141A (en) * | 1991-03-29 | 1992-10-21 | 카나가와 치히로 | Epoxy Resin Compositions and Semiconductor Devices |
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