KR100345842B1 - Microstrip line type voltage controlled oscillator - Google Patents

Abstract

In the conventional microstripline voltage controlled oscillator, since the second layer 42 made of the second ground conductor 42a is disposed between the first layer 41 and the third layer 43, Since the length dimension 12 between the second microstrip line 41b for vibrating vessel and the second ground conductor is short, there is a problem that the Q value is small and the C / N characteristics of the oscillation signal are not largely taken.

The dielectric substrate 2 on which the electric component 1 is mounted, the first micro strip line 3a for applying the control voltage and the second micro strip line 3b for oscillation tuning provided in parallel with the upper surface side of the dielectric substrate. And a first layer 3 having a third microstrip line 3c for buffer amplifier output tuning, a second layer 4 having a fourth microstrip line 4a for resonance, and a lower surface of the dielectric substrate. A first ground conductor (5) is provided in the second ground conductor, and a second ground conductor is not formed between at least the second micro stripline and the fourth micro stripline.

Description

MICROSTRIP LINE TYPE VOLTAGE CONTROLLED OSCILLATOR}

The present invention relates to a micro stripline type voltage controlled oscillator using the micro stripline as a resonant element.

A conventional micro stripline voltage controlled oscillator will be described with reference to the drawings. 10 is a plan view showing a conventional microstripline voltage controlled oscillator, FIG. 11 is a plan view showing a first layer of a conventional microstripline voltage controlled oscillator, and FIG. 12 is a first view of a conventional microstripline voltage controlled oscillator. 13 is a plan view showing the third layer of the conventional microstripline voltage controlled oscillator, and FIG. 14 is a sectional view showing the main parts of the conventional microstripline voltage controlled oscillator.

As shown in Figs. 10 to 14, the conventional microstripline type voltage controlled oscillator 20 uses each microstripline made of a conductive line as a tuning element and a resonant element, and generates high frequency oscillation (for example, Oscillation of about 690 MHz). The microstripline type voltage controlled oscillator 20 is made of, for example, an electric component 30 such as a chip capacitor or an integrated circuit device, and a dielectric composed of, for example, a resin or ceramics, and on which the electronic component 30 is mounted. It has a substrate 40.

Inside the dielectric substrate 40, a first layer 41 provided on the upper surface side of the dielectric substrate 40, a second layer 42 provided below the first layer 41, and a dielectric substrate 40. The three layers with the 3rd layer 43 provided under the 2nd layer 42 as the lower surface side of is formed. In other words, the dielectric substrate 40 is formed in a so-called multilayer structure.

A substantially ground surface of the lower surface of the dielectric substrate 40 is formed of a conductor, and a first ground conductor 40a for shielding the microstripline voltage controlled oscillator 20 is formed.

The first layer 41 is made of a conductive line, and is provided in a predetermined shape, respectively, and has a first micro stripline 41a for applying a control voltage, a second micro stripline 41b for oscillation tuning, and a buffer amplifier. A third microstrip line 41c for output tuning is formed in parallel.

In the second layer 42, a second ground conductor 42a made of a conductor is formed. The second ground conductor 42a has a dielectric material at a position (opposite position) that overlaps with all of the first, second and third microstriplines 41a, 41b, 41c constituting the first layer 41 described above. It is formed in a substantially front surface in the substrate 40. In this state, the length dimension (distance) between the first, second, and third microstriplines 41a, 41b, 41c and the second ground conductor 42a is a relatively short predetermined length dimension 12 ( For example, about 0.2 mm).

The third layer 43 is made of a conductive line, is provided in a predetermined shape, and a fourth micro strip line 43a for resonance is formed. This fourth microstripline 43a is formed at a position partially overlapping with all of the first, second and third microstriplines 41a, 41b, 41c constituting the first layer 41 described above.

The second ground conductor 42a of the second layer 42 includes the first, second and third microstriplines 41a, 41b, 41c (first layer 41) and the fourth micros. It is formed in order to reduce the interference between the strip lines 43a (third layer 43).

Although not shown, the electrical component 30, the first, second and third micro strip lines 41a, 41b, 41c, the second ground conductor 42a, the fourth micro strip line 43a, Each of the first ground conductors 40a is connected to each other by a through hole (not shown) or the like at a predetermined place.

The microstripline type voltage controlled oscillator 20 is housed in a shield case (not shown), and the shield case is soldered to the side surface of the dielectric substrate 40, and the first and second ground conductors 40a. , 42a).

It is generally known here that the Q value in a dielectric substrate is influenced by the length dimension between the microstripline and the ground conductor opposite the microstripline.

In the conventional microstripline voltage controlled oscillator, since the second layer 42 made of the second ground conductor 42a is disposed on the front surface between the first layer 41 and the third layer 43, the second layer 42 is disposed to face each other. Since the length dimension (distance) 12 between the first, second and third microstriplines 41a, 41b, 41c of the first layer 41 and the second ground conductor 42a is relatively short, There was a problem that the thickness was not obtained, and thus the dielectric loss increased, which caused the Q value to decrease.

Similarly, since the Q value is low, the C / N (carrier / noise) characteristic of the oscillation signal is not largely taken.

Therefore, the microstripline voltage controlled oscillator of the present invention solves the above problems, and its purpose is to improve the C / N characteristics of the oscillation signal by increasing the Q value of the microstripline voltage controlled oscillator. .

1 is a plan view showing an embodiment of a microstripline voltage controlled oscillator of the present invention;

2 is a plan view showing an embodiment of a first layer of the microstripline voltage controlled oscillator of the present invention;

3 is a plan view showing an embodiment of a third layer of the microstripline voltage controlled oscillator of the present invention;

4 is a plan view showing an embodiment of a second layer of the microstripline voltage controlled oscillator of the present invention;

Fig. 5 is a sectional view showing the principal parts of an embodiment of a microstripline voltage controlled oscillator of the present invention.

6 is a plan view showing a second embodiment of the microstripline voltage controlled oscillator of the present invention;

7 is a plan view showing a second embodiment of the first layer of the microstripline voltage controlled oscillator of the present invention;

8 is a plan view showing a second embodiment of the second layer of the microstripline voltage controlled oscillator of the present invention;

9 is a sectional view showing the principal parts of a second embodiment of a microstripline voltage controlled oscillator of the present invention;

10 is a plan view showing a conventional microstripline voltage controlled oscillator;

11 is a plan view showing a first layer of a conventional microstripline voltage controlled oscillator;

12 is a plan view showing a second layer of a conventional microstripline voltage controlled oscillator;

13 is a plan view showing a third layer of a conventional microstripline voltage controlled oscillator;

14 is a sectional view showing the principal parts of a conventional microstripline voltage controlled oscillator.

※ Explanation of symbols for main parts of drawing

1: Electric parts 2: Dielectric substrate

3: first layer 3a: first micro stripline

3b: second micro stripline 3c: third micro stripline

4: 2nd layer 4a: 4th micro stripline

5: first grounding conductor

6: micro stripline type voltage controlled oscillator

7: 3rd layer 7a: 2nd ground conductor

The microstripline type voltage controlled oscillator of the present invention comprises a dielectric substrate on which an electric component constituting an oscillation circuit is formed, and a conductor provided in parallel on an upper surface side of the dielectric substrate. A first layer having a second microstripline for oscillation tuning and a third microstripline for buffer amplifier output tuning, a second layer provided on the lower surface side of the dielectric substrate and having a fourth microstripline for resonance A layer, a first ground conductor formed on the lower surface of the dielectric substrate and made of a conductor, and a second ground conductor made of a conductor provided between the first layer and the second layer. The second ground conductor is formed to overlap only while overlapping with the third micro stripline.

The microstripline voltage controlled oscillator is formed such that the second ground conductor overlaps only between the fourth microstripline and the third microstripline of the first layer.

The microstripline type voltage controlled oscillator is formed such that the fourth microstripline of the second layer overlaps only the first and second microstriplines of the first layer.

Here, the inventors have conducted various experiments on the configuration of the microstripline type voltage controlled oscillator, and the difference in the Q value in the configuration of the arrangement of the first layer and the ground conductor (second layer), and the first and third layers. By verifying the interference with, the difference in the Q value is mainly caused by the length dimension between the oscillation tuning second microstripline and the ground conductor, and the interference between the first layer and the third layer for the buffer amplifier output tuning. It was confirmed that the influence of interference was the greatest in the third microstripline (first layer) and the fourth microstripline for resonance (third layer).

From this, a configuration of a microstripline type voltage controlled oscillator capable of obtaining a large Q value compared with the conventional one and appropriately preventing mutual interference can be obtained.

EMBODIMENT OF THE INVENTION Hereinafter, the microstripline type voltage controlled oscillator of this invention is demonstrated using drawing.

1 is a plan view showing an embodiment of the microstripline type voltage controlled oscillator of the present invention, FIG. 2 is a plan view showing an embodiment of a first layer of the microstripline type voltage controlled oscillator of the present invention, and FIG. 4 is a plan view showing an embodiment of a third layer of the microstripline type voltage controlled oscillator, FIG. 4 is a plan view showing an embodiment of a second layer of the microstripline type voltage controlled oscillator of the present invention, and FIG. 5 is a microstrip of the present invention. Fig. 1 is a sectional view showing the main parts of an embodiment of a line type voltage controlled oscillator.

As shown in Figs. 1 to 5, the microstripline voltage controlled oscillator 6 of the present invention uses each microstripline made of a conductive line as a tuning element and a resonance element, and oscillates at high frequency (for example, about 690 MHz oscillation). The microstripline type voltage controlled oscillator 6 is made of, for example, a chip capacitor having a relatively small shape, a chip resistor, an electric component 1 such as an integrated circuit device, and a resin or ceramics. It has a dielectric substrate 2 on which an electric component 1 is mounted.

Here, inside the dielectric substrate 2, a first layer 3 provided on the upper surface side of the dielectric substrate 2, a third layer 7 provided below the first layer 3, and a dielectric substrate 2. Three layers of the second layer 4 provided below the third layer 7 are formed as the lower surface side of the substrate. In other words, the dielectric substrate 2 is formed of a so-called multilayer structure (three layers).

In addition, a first ground conductor 5 is formed on a substantially front surface of the lower surface of the dielectric substrate 2 to shield the microstripline voltage controlled oscillator 6.

As shown in Fig. 2, the first layer 3 is made of a conductive line, and is provided in a predetermined shape, for example, a first micro strip line 3a for applying a control voltage and a first micro strip line. It is provided in the neighborhood of (3a), for example, the oscillation tuning solvent 2 microstripline 3b, and it is installed in the neighborhood of this 2nd microstripline 3b, for example, the 3rd micro for buffer amplifier output tuning. The strip line 3c is formed in parallel. In other words, the first micro stripline 3a and the third micro stripline 3c are formed in parallel so as to sandwich the second micro stripline 3b.

As shown in FIG. 3, the second ground conductor 7a made of a conductor is formed in the third layer 7. The second ground conductor 7a is formed at a position overlapping only with the third micro strip lines 3c b constituting the first layer 3 described above (see Fig. 5). In other words, the second ground conductor 7a is formed so as not to overlap with the first and second micro strip lines 3a and 3b.

As shown in Fig. 4, the second layer 4 is made of a conductive line, is provided in a predetermined shape, and for example, a fourth microstrip line 4a for resonance is formed. This fourth microstripline 4a is formed at a position partially overlapping with all of the first, second and third microstriplines 3a, 3b, 3c constituting the first layer 3 described above ( See FIG. 5).

In this state, the length dimension (distance) between the second micro stripline 3b and the first ground conductor 5 opposite to the second micro stripline 3b is determined by the first ground conductor 5. Since it is disposed on the lower surface of the dielectric substrate 2, it becomes a relatively long predetermined length dimension L1 (for example, about 0.4 mm: L1> L2). For this reason, a sufficient thickness of the dielectric layer is obtained between the second micro stripline 3b and the first ground conductor 5, so that the dielectric loss is reduced as compared with the conventional one. For this reason, the Q value rises, so that the C / N (carrier / noise) characteristic of the oscillation signal is large (for example, about 2 dB upward).

In addition, the interference between the first layer 3 and the second layer 4 is not connected to the ground conductor between the first and second micro strip lines 3a and 3b and the fourth micro strip line 4a. Even if it is maintained at about the same level in comparison with the prior art, and the interference between the third microstripline 3c and the fourth microstripline 4a, the third microstripline 3c and the fourth microstripline Since the second ground conductor 7a is disposed only between the portions 4a, the interference structure is formed with little interference.

Although not shown, the electrical component 1, the first, second and third micro strip lines 3a, 3b and 3c, the fourth micro strip line 4a, the first ground conductor 5, Each of the second ground conductors 7a is connected to each other by a through hole (not shown) or the like at a predetermined place.

The microstripline type voltage controlled oscillator 6 is housed in a shield case (not shown), which is soldered to the side surface of the dielectric substrate 2, and the first ground conductor 5 and the first ground conductor 5 are formed. 2 is connected to the ground conductor 7a.

Next, a second embodiment of the microstripline voltage controlled oscillator of the present invention will be described with reference to the drawings.

6 is a plan view showing a second embodiment of the microstripline type voltage controlled oscillator of the present invention, and FIG. 7 is a plan view showing a second embodiment of the first layer of the microstripline type voltage controlled oscillator of the present invention. Is a plan view showing a second embodiment of the second layer of the microstripline type voltage controlled oscillator of the present invention, and FIG. 9 is a sectional view showing the principal parts of a second embodiment of the microstripline type voltage controlled oscillator of the present invention. The same reference numerals are given to the same configuration as the microstripline type voltage controlled oscillator of the first embodiment.

6 to 9, the structure of the microstripline type voltage controlled oscillator 10 of the present invention is substantially the same as that of the first embodiment described above, and the difference structure will be described below.

In the dielectric substrate 2, the first layer 3 provided on the upper surface side of the dielectric substrate 2 and the second layer 4 provided below the first layer 3 as the lower surface side of the dielectric substrate 2 are provided. Two layers with) are formed. In other words, the dielectric substrate 2 has two layers.

In addition, a first ground conductor 5 is formed on a substantially front surface of the lower surface of the dielectric substrate 2 to shield the microstripline voltage controlled oscillator 6.

As shown in Fig. 7, the first layer 3 is made of a conductive line, and is provided in a predetermined shape, for example, a first micro strip line 3a for applying a control voltage and a first micro strip line ( Installed in the neighborhood of 3a), for example in the oscillation tuning second microstripline 3b and in the neighborhood of the second microstripline 3b, for example in the buffer amplifier output tuning third microstripline ( 3c) b) is formed in parallel. That is, the first micro stripline 3a and the third micro stripline 3c are parallel to each other so as to sandwich the second micro stripline 3b, so that each microstrip is approximately in front of the first layer 3. A line is formed.

As shown in Fig. 8, the second layer 4 is made of a conductive line, is provided in a predetermined shape, and for example, a fourth microstrip line 4b for resonance is formed. This fourth microstripline 4b is formed at a position partially overlapping only the first and second microstriplines 3a and 3b constituting the first layer 3 described above (see FIG. 9). The fourth microstrip line 4b for resonance is formed so as not to overlap with the third microstrip line 3c for buffer amplifier output tuning constituting the first layer 3.

For this reason, the interference between the third microstripline 3c and the fourth microstripline 4b can be achieved even if the ground conductor is not disposed between the third microstripline 3c and the fourth microstripline 4b. Nevertheless, it is formed in a small configuration. In addition, as described above, the interference between the first layer 3 and the second layer 4 is caused by the first and second micro strip lines 3a and 3b (the first layer 3) and the fourth micro strip line 4b. ) (Second layer 4) is maintained at substantially the same level in comparison with the prior art even if no ground conductor is formed therebetween.

In this state, the length dimension (distance) between the second micro strip line 3b and the first ground conductor 5 is between the fourth micro strip line 4b and the first micro strip line 4b is disposed therebetween. Since the ground conductor 5 is disposed on the lower surface of the dielectric substrate 2, the ground conductor 5 is provided with a relatively long predetermined length dimension L1 (for example, about 0.4 mm: l1> L2). For this reason, the dielectric loss of the 2nd micro stripline 3b reduces compared with the former, and therefore Q value rises.

Although not shown, each of the electrical component 1, the first, second and third micro strip lines 3a, 3b and 3c, the fourth micro strip line 4a and the first ground conductor 5, respectively. Are connected to each other by a through hole (not shown) or the like at a predetermined place.

The microstripline voltage controlled oscillator 10 is housed in a shield case (not shown), which is soldered to the side surface of the dielectric substrate 2 and connected to the first ground conductor 5. have.

Moreover, although the 4th micro stripline 4b of 2nd Embodiment is formed with the area whose area is small compared with the 4th microstripline 4a of 1st Embodiment mentioned above, it is the 4th of 1st Embodiment. Comparing with the fourth microstripline 4a of the first embodiment by changing the shape of the fourth microstripline 4b by comparison with the microstripline 4a, maintaining the accuracy of the shape dimension, or the like. Maintain functionality.

Further, the above-described embodiments in which the first, second and third microstriplines 3a, 3b, and 3c of the microstripline type voltage controlled oscillator are connected in parallel have been described. However, the present invention is not limited thereto, and each microstripline ( It is a matter of course that 3a, 3b, 3c are provided at predetermined positions of the same plane shape, and the fourth micro stripline 4a is disposed corresponding to the positions.

As described above, the microstripline voltage controlled oscillator of the present invention is provided on the lower surface of the dielectric substrate, has a first ground conductor made of a conductor, and has at least a second microstripline for oscillation tuning and a fourth microstripline for resonance. Since no ground conductor is formed near the bottom of the second microstripline because no second ground conductor is formed therebetween, the dielectric loss of the second microstripline is reduced, thereby improving the Q value. Therefore, the output level of the oscillation signal is increased and load stability of the oscillation frequency is further improved.

In addition, the microstripline voltage controlled oscillator of the present invention is formed such that the second ground conductor overlaps only between the fourth microstrip line for resonance and the third microstrip line for tuning the buffer amplifier output of the first layer. Since only between the microstripline and the fourth microstripline is shielded by the second ground conductor, the interference therebetween is reduced, and since the ground conductor is not formed near the bottom of the second microstripline, the second The dielectric loss of the microstripline is reduced, which improves the Q value, thereby increasing the output level of the oscillation signal and further improving the load stability of the oscillation frequency.

In addition, the microstripline voltage controlled oscillator of the present invention is formed such that the fourth microstripline for resonance overlaps only the first microstripline for control voltage application and the second microstripline for oscillation tuning. The interference of the three microstriplines is small, and since the ground conductor is not formed close to the bottom of the second microstripline, the dielectric loss of the second microstripline is reduced, thereby improving the Q value and thus the oscillation signal. The output level of is raised.

In addition, the microstripline voltage controlled oscillator of the present invention has an oscillation signal because the length dimension (distance) l1 (l1> l2) between the second microstripline and the ground conductor of the lower surface of the dielectric substrate is longer than in the prior art. The C / N (carrier / noise) characteristic of C is increased (e.g., about 2 dB upward) to provide a micro stripline voltage controlled oscillator having a good C / N ratio.

In the microstripline voltage controlled oscillator of the present invention, since the second layer 42 (second ground conductor 42a) formed in the conventional voltage controlled oscillator is not formed, the number of layers of the multilayer structure is at least reduced. This can reduce costs and thus provide an inexpensive micro stripline voltage controlled oscillator.

Claims (3)

A dielectric substrate having electrical components constituting the oscillation circuit; A first layer comprising a conductor disposed on an upper surface side of the dielectric substrate and having a first micro stripline for applying control voltage, a second micro stripline for oscillating tuning, and a third micro stripline for tuning buffer amplifier output; and, A second layer disposed on a lower surface of the dielectric substrate and formed of a conductor and having a fourth micro strip line for resonance; A microstrip having a first grounding conductor formed on a lower surface of said dielectric substrate and made of a conductor, and wherein at least said second microstripline and said fourth microstrip line are not formed; Line voltage controlled oscillator. The method of claim 1, And the second ground conductor overlaps only between the fourth micro stripline and the third micro stripline of the first layer. The method of claim 1, And the fourth micro stripline of the second layer is formed so as to overlap only with the first and second micro stripline of the first layer.