KR100321021B1 - Nitric and silicide compound based conversion coating composition for printed circuit boards - Google Patents
Nitric and silicide compound based conversion coating composition for printed circuit boards Download PDFInfo
- Publication number
- KR100321021B1 KR100321021B1 KR1019990027787A KR19990027787A KR100321021B1 KR 100321021 B1 KR100321021 B1 KR 100321021B1 KR 1019990027787 A KR1019990027787 A KR 1019990027787A KR 19990027787 A KR19990027787 A KR 19990027787A KR 100321021 B1 KR100321021 B1 KR 100321021B1
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- South Korea
- Prior art keywords
- composition
- acid
- chemical
- compound
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000008199 coating composition Substances 0.000 title claims abstract description 34
- 238000007739 conversion coating Methods 0.000 title claims abstract description 20
- -1 silicide compound Chemical class 0.000 title claims description 18
- 229910021332 silicide Inorganic materials 0.000 title 1
- 239000000203 mixture Substances 0.000 claims abstract description 66
- 239000000126 substance Substances 0.000 claims abstract description 58
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 30
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 16
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 150000007524 organic acids Chemical class 0.000 claims abstract description 11
- 229910017464 nitrogen compound Inorganic materials 0.000 claims abstract description 10
- 150000002830 nitrogen compounds Chemical class 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 239000003381 stabilizer Substances 0.000 claims abstract description 7
- 235000005985 organic acids Nutrition 0.000 claims abstract description 5
- 150000003839 salts Chemical class 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000011734 sodium Substances 0.000 claims description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 6
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 6
- 150000003464 sulfur compounds Chemical class 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- 239000004115 Sodium Silicate Substances 0.000 claims description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 5
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- 150000002823 nitrates Chemical class 0.000 claims description 4
- 150000002894 organic compounds Chemical class 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 4
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 4
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 150000002898 organic sulfur compounds Chemical class 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- WYMDDFRYORANCC-UHFFFAOYSA-N 2-[[3-[bis(carboxymethyl)amino]-2-hydroxypropyl]-(carboxymethyl)amino]acetic acid Chemical class OC(=O)CN(CC(O)=O)CC(O)CN(CC(O)=O)CC(O)=O WYMDDFRYORANCC-UHFFFAOYSA-N 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical class OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000012425 OXONE® Substances 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 2
- RYYWUUFWQRZTIU-UHFFFAOYSA-N Thiophosphoric acid Chemical compound OP(O)(S)=O RYYWUUFWQRZTIU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 150000008064 anhydrides Chemical class 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 239000004202 carbamide Substances 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 239000002738 chelating agent Substances 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 150000001805 chlorine compounds Chemical class 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 claims description 2
- 229940113088 dimethylacetamide Drugs 0.000 claims description 2
- RMGVZKRVHHSUIM-UHFFFAOYSA-N dithionic acid Chemical class OS(=O)(=O)S(O)(=O)=O RMGVZKRVHHSUIM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 2
- 229910021331 inorganic silicon compound Inorganic materials 0.000 claims description 2
- 159000000014 iron salts Chemical class 0.000 claims description 2
- 229910000358 iron sulfate Inorganic materials 0.000 claims description 2
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 claims description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 2
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 150000001282 organosilanes Chemical class 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 239000002798 polar solvent Substances 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- OKBMCNHOEMXPTM-UHFFFAOYSA-M potassium peroxymonosulfate Chemical compound [K+].OOS([O-])(=O)=O OKBMCNHOEMXPTM-UHFFFAOYSA-M 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004317 sodium nitrate Substances 0.000 claims description 2
- 235000010344 sodium nitrate Nutrition 0.000 claims description 2
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003852 triazoles Chemical class 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 229910018557 Si O Inorganic materials 0.000 claims 1
- LJSAJMXWXGSVNA-UHFFFAOYSA-N a805044 Chemical compound OC1=CC=C(O)C=C1.OC1=CC=C(O)C=C1 LJSAJMXWXGSVNA-UHFFFAOYSA-N 0.000 claims 1
- 150000002897 organic nitrogen compounds Chemical class 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 1
- 150000003567 thiocyanates Chemical class 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 25
- 239000002253 acid Substances 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 12
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000000853 adhesive Substances 0.000 abstract description 11
- 230000001070 adhesive effect Effects 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004381 surface treatment Methods 0.000 abstract description 4
- 238000004904 shortening Methods 0.000 abstract description 2
- 239000002351 wastewater Substances 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 239000010949 copper Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000011889 copper foil Substances 0.000 description 9
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 7
- 238000003475 lamination Methods 0.000 description 7
- 230000035939 shock Effects 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000003513 alkali Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000012752 auxiliary agent Substances 0.000 description 3
- 229960004643 cupric oxide Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- YJROYUJAFGZMJA-UHFFFAOYSA-N boron;morpholine Chemical compound [B].C1COCCN1 YJROYUJAFGZMJA-UHFFFAOYSA-N 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 2
- 229940112669 cuprous oxide Drugs 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- AQHJXELXFBINLL-UHFFFAOYSA-N 1h-pyridine-2-thione;sodium Chemical compound [Na].SC1=CC=CC=N1 AQHJXELXFBINLL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Chemical group 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- BUKMWNXLWPYKQY-UHFFFAOYSA-N [Si](O)(O)(O)O.[Si](O)(O)(O)O.N1C(NCC1)=O Chemical compound [Si](O)(O)(O)O.[Si](O)(O)(O)O.N1C(NCC1)=O BUKMWNXLWPYKQY-UHFFFAOYSA-N 0.000 description 1
- FVTRDWMTAVVDCU-UHFFFAOYSA-N acetic acid;hydrogen peroxide Chemical compound OO.CC(O)=O FVTRDWMTAVVDCU-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 238000005237 degreasing agent Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229930195733 hydrocarbon Chemical group 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- ZYFXHKPHYKLIDV-UHFFFAOYSA-N hydrogen peroxide;2-hydroxypropane-1,2,3-tricarboxylic acid Chemical compound OO.OC(=O)CC(O)(C(O)=O)CC(O)=O ZYFXHKPHYKLIDV-UHFFFAOYSA-N 0.000 description 1
- HFMMRNMXYCFQFD-UHFFFAOYSA-N hydrogen peroxide;propanoic acid Chemical compound OO.CCC(O)=O HFMMRNMXYCFQFD-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- WHMDPDGBKYUEMW-UHFFFAOYSA-N pyridine-2-thiol Chemical compound SC1=CC=CC=N1 WHMDPDGBKYUEMW-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003254 radicals Chemical group 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
- C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
- C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
- C23C22/52—Treatment of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2222/00—Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
- C23C2222/20—Use of solutions containing silanes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
- Paints Or Removers (AREA)
Abstract
본 발명은 인쇄회로기판 (Printed Circuit Board: PCB)의 표면처리, 보다 상세하게는 인쇄회로기판 제조공정 중 내층기판의 흑화처리 공정에 사용되는 질소 및 규소 화합물을 주재로 한 화성피막조성물(Conversion Coating Composition)에 관한 것으로, 본 발명에 의하여,The present invention is a coating film composition based on nitrogen and silicon compounds used in the surface treatment of a printed circuit board (PCB), and more specifically in the blackening process of the inner layer of the printed circuit board manufacturing process (Conversion Coating) Composition, according to the present invention,
(1) 황산;(1) sulfuric acid;
(2) 유기산;(2) organic acids;
(3) 과산화수소;(3) hydrogen peroxide;
(4) 질소화합물;(4) nitrogen compounds;
(5) 규소화합물; 및(5) silicon compounds; And
(6) 피막형성 보조제, 에칭속도 조절제, 반응촉진제 및 안정화제 중 최소 일성분 이상을 포함하여 구성된 인쇄회로기판용 화성피막 조성물이 제공된다.(6) Provided is a chemical conversion film composition for a printed circuit board comprising at least one component of a film forming aid, an etching rate control agent, a reaction accelerator, and a stabilizer.
본 발명에 의한 인쇄회로기판용 화성피막 조성물을 사용함으로써 종래의 흑화처리에 비하여 단시간내에 단축된 처리공정으로 낮은 온도에서 흑화처리 할 수 있으며, 또한 본 발명에 의한 화성피막(Conversion Coating) 조성물로 처리된 인쇄회로기판은 우수한 내산성 및 접착강도를 나타낸다. 더욱이 환원처리 공정이 생략됨으로써 종래 사용되던 고가의 환원처리 약품의 사용이 배제되고 폐수 발생량이 50% 이상 감소되어 더욱 경제적인 것이다.By using the chemical conversion coating composition for a printed circuit board according to the present invention, it is possible to perform blackening at a low temperature by a shortening process in a short time as compared with the conventional blackening treatment, and also with the conversion coating composition according to the present invention. The printed circuit board has excellent acid resistance and adhesive strength. In addition, by eliminating the reduction treatment process, the use of expensive reducing treatment chemicals conventionally used is eliminated, and the amount of wastewater generated is reduced by 50% or more, which is more economical.
Description
본 발명은 인쇄회로기판 (Printed Circuit Board: PCB)의 표면처리에 사용되는 화성피막 조성물에 관한 것이며, 보다 상세하게는 인쇄회로기판 제조공정 중 내층기판의 흑화처리 공정에 사용되는 질소 및 규소 화합물을 주재로 한 컨버젼 코팅 조성물에 관한 것이다.The present invention relates to a chemical conversion coating composition used for the surface treatment of a printed circuit board (PCB), and more specifically to the nitrogen and silicon compounds used in the blackening process of the inner layer of the printed circuit board manufacturing process It relates to a conversion coating composition mainly.
다층인쇄회로기판(MLB) 제조과정에서 내층회로의 흑화처리공정을 채택하고 있는데, 흑화처리공정은 다층기판 제조시 내층회로를 주위환경으로부터 보호하고 각 내층과 외층을 결합하는 적층공정시 접착력을 극대화할 목적으로 행하여지는 필수불가결한 공정이다.In the manufacturing process of multi-layer printed circuit board (MLB), the blackening process of inner layer circuit is adopted. The blackening process protects the inner layer circuit from the surrounding environment in the manufacture of multi-layered board and maximizes the adhesive strength in the lamination process combining each inner layer and outer layer. This is an indispensable process for the purpose of doing so.
지금까지 PCB 산업에서 다층인쇄회로기판(MLB) 내층을 흑화처리(Black Oxide)하기 위해서는 가성소다 또는 가성알카리(NaOH, KOH)의 알카리 분위기 하에서 아염소산소다와 같은 산화제를 사용하여 높은 온도(70∼80℃)에서 구리로 이루어진 내층회로를 흑색으로 산화시키는 방법이 사용되어 왔다.Until now, in the PCB industry, to oxidize the multilayer printed circuit board (MLB) inner layer (Black Oxide), using an oxidizing agent such as sodium chlorite under an alkaline atmosphere of caustic soda or caustic alkali (NaOH, KOH) (70 ~ A method of oxidizing an inner layer circuit made of copper to black at 80 ° C.) has been used.
상기 종래의 흑화처리 공정에 의해 생성된 흑화막은 구리(Cu)가 산화된 제 2 산화구리(CuO)층으로 내산성이 극히 취약하여 흑화 및 적층 공정 후 계속되는 산성욕, 즉 무전해동도금 공정의 소프트-에칭(Soft-etching, H2SO4/H2O2), 산성구리도금욕(CuSO4/H2SO4) 및 그 전처리 공정을 거치면서 드릴링된 홀(Hole) 주위의 흑화막이 산에 침식되어 발생하는 핑크링(Pinkring)이라는 문제가 야기되어 왔다. 이러한 문제점을 해결하기 위하여 종래에는 CuO(Cupric Oxide)층을 내산성이 비교적 우수한 Cu2O(Cuprous Oxide)층으로 환원시키는 공정을 채택하고 있는데 이 환원층은 CuO 층에 비하여 내산성은 우수하지만 근본적으로 소프트 에칭공정 및 황산(H2SO4), 염산(HCl), 질산(HNO3)등의 무기산에 용해되는 문제점은 해결하지 못하였으며 더욱이 높은 온도에서 Cu2O(Cuprous Oxide)층이 CuO(Cupric Oxide)층으로 재산화되는 문제점을 야기시켜 왔다.The blackening film produced by the conventional blackening process is a second copper oxide (CuO) layer in which copper (Cu) is oxidized. During the etching process (Soft-etching, H 2 SO 4 / H 2 O 2 ), acid copper plating bath (CuSO 4 / H 2 SO 4 ) and its pretreatment process, the blackening film around the drilled hole is eroded by acid There is a problem called pinking occurs. In order to solve this problem, conventionally, a process of reducing a CuO (Cupric Oxide) layer to a Cu 2 O (Cuprous Oxide) layer having excellent acid resistance is adopted. Etching process and the problem of dissolving in inorganic acids such as sulfuric acid (H 2 SO 4 ), hydrochloric acid (HCl), nitric acid (HNO 3 ), etc. were not solved, and Cu 2 O (Cuprous Oxide) layer at higher temperature It has caused the problem of re-assignment to).
또한 환원공정에서 사용하는 환원제는 DMAB(Dimethyl Amine Borane), MPB(Morpholine Borane), HCHO(Formalin), NaBH4(Sodium Borohydride), KBH4(Potassium Borohydride)등이 있으나 주로 사용되고 있는 DMAB와 MPB는 매우 고가의 약품으로 흑화처리 공정비용의 대부분을 차지하고 있는 실정이다.Reducing agents used in the reduction process include DMAB (Dimethyl Amine Borane), MPB (Morpholine Borane), HCHO (Formalin), NaBH 4 (Sodium Borohydride), and KBH 4 (Potassium Borohydride). It is an expensive drug and accounts for most of the cost of the blackening process.
그 외에도 현재 산성분위기하에서 진행하는 흑화처리 공정이 몇가지 소개되어 있으나 욕조(Bath)의 염소이온농도에 매우 민감하여 관리에 어려운점이 있으며 가장 중요한 접착강도(Peel 또는 Bonding Strength)가 1.0 kg/㎠ 미만으로 신뢰성 면에서 취약한 면을 보이고 있다.In addition, there are some blackening treatment processes currently under acidic crisis, but they are very sensitive to chlorine ion concentration in baths, which makes them difficult to manage. The most important adhesive strength (Peel or Bonding Strength) is less than 1.0 kg / ㎠ It is weak in terms of reliability.
이에 본 발명의 목적은 종래의 알카리 흑화처리 공정 및 최근의 산성흑화처리 공정의 문제점을 해결한 것으로 유기 및 무기 질소화합물과 규소화합물을 주재로 하여 내산성과 접착강도가 우수한 흑갈색 산화피막을 형성할 수 있는 동 및 동합금에 사용되는 화성피막 조성물(Conversion Coating Composition)을 제공하는 것이다.Accordingly, an object of the present invention is to solve the problems of the conventional alkali blackening process and the recent acid blackening process, and it is possible to form a black-brown oxide film having excellent acid resistance and adhesive strength mainly based on organic and inorganic nitrogen compounds and silicon compounds. The present invention provides a conversion coating composition used for copper and copper alloy.
본 발명의 다른 목적은 종래의 흑화처리공정에 필수적으로 요구되는 전처리 및 후처리 공정이 필요하지 않고 인쇄회로 기판에 흑갈색 막을 형성하는 화성피막 조성물을 제공하는 것이다.It is another object of the present invention to provide a chemical conversion coating composition which forms a blackish brown film on a printed circuit board without the pretreatment and posttreatment processes required for the conventional blackening process.
본 발명의 또 다른 목적은 다층인쇄회로기판의 적층성형시 강한 밀착력을 나타내는 화성피막 조성물을 제공하는 것이다.It is still another object of the present invention to provide a chemical conversion coating composition that exhibits strong adhesion when forming a multilayer printed circuit board.
본 발명에 의하면According to the present invention
(1) 황산;(1) sulfuric acid;
(2) 유기산;(2) organic acids;
(3) 과산화수소;(3) hydrogen peroxide;
(4) 질소화합물;(4) nitrogen compounds;
(5) 규소화합물; 및(5) silicon compounds; And
(6) 피막형성 보조제, 에칭속도 조절제, 반응촉진제 및 안정화제 중 최소 일성분 이상을 포함하여 구성된 인쇄회로기판용 화성피막 조성물이 제공된다.(6) Provided is a chemical conversion film composition for a printed circuit board comprising at least one component of a film forming aid, an etching rate control agent, a reaction accelerator, and a stabilizer.
이하, 본 발명에 대하여 상세히 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, this invention is demonstrated in detail.
본 발명에 의한 화성피막 조성물은 인쇄회로기판의 표면처리 및 접착력 개선에 사용되는 산, 질소 및 규소화합물을 기재로 한 조성물로서 특히, 다층인쇄회로기판(MLB) 제조과정에서 내층회로의 흑화처리공정에 사용되어 우수한 접착강도 및 내산성을 나타내며, 또한 종래 사용되던 흑화처리공정을 현저하게 단축할 수 있는 것이다.The chemical conversion coating composition according to the present invention is a composition based on an acid, nitrogen and silicon compound used for surface treatment and improved adhesion of a printed circuit board. In particular, the blackening process of an inner layer circuit in a multilayer printed circuit board (MLB) manufacturing process. It can be used to exhibit excellent adhesive strength and acid resistance, and can significantly shorten the blackening treatment process conventionally used.
본 발명에 의한 인쇄회로기판용 화성피막 조성물(이하, 단지 '코팅 조성물'이라 한다.)은 주성분으로 황산, 과산화수소 및 질소, 규소 화합물을 함유하는 조성물로서 종래의 처리방법 및 약품으로 인쇄회로기판을 처리하는 경우, 내산성이 약한 흑색의 산화구리(CuO)막이 형성되나, 본 발명에 의한 코팅 조성물로 인쇄회로기판을 처리하는 경우, 내산성 및 접착강도가 우수한 흑갈색의 유기 코팅막이 형성된다.The chemical conversion coating composition for a printed circuit board according to the present invention (hereinafter, referred to simply as a 'coating composition') is a composition containing sulfuric acid, hydrogen peroxide, nitrogen, and silicon compounds as main components. In the case of treatment, a black copper oxide (CuO) film having weak acid resistance is formed, but when the printed circuit board is treated with the coating composition according to the present invention, a black brown organic coating film having excellent acid resistance and adhesive strength is formed.
본 발명의 코팅 조성물이 구리 회로에 적용되는 과정은 조성물 중 황산 및 과산화수소는 조성물의 산성도를 유지하면서 구리를 에칭하는 작용을 하게 되며 이러한 에칭작용을 구동력으로 하여 질소 및 규소화합물이 금속 구리 표면에 착색되면서 흑갈색막을 형성하게 된다.In the process of applying the coating composition of the present invention to the copper circuit, sulfuric acid and hydrogen peroxide in the composition act to etch copper while maintaining the acidity of the composition, and nitrogen and silicon compounds are colored on the surface of metal copper by using such etching. As a result, a black brown film is formed.
이 때, 황산등을 포함하는 무기 및 유기산과 과산화수소는 생성된 코팅막의 응집력을 크게하고 접착력을 증대시키며 코팅막의 색상을 보조하는 이차적인 작용을 하게 된다.At this time, inorganic and organic acids including sulfuric acid and hydrogen peroxide have a secondary function of increasing the cohesion of the resulting coating film, increasing the adhesion and assisting the color of the coating film.
본 발명에 의한 인쇄회로기판용 코팅 조성물 중 황산은 98 % 황산을 기준으로 조성물의 총 부피에 대하여 0.1-30 v%, 바람직하게는 1.0-15 v%로 사용한다. 황산의 양이 0.1 v% 미만인 경우에는 피막을 형성하기 어렵고 30 v% 이상이면 피막의 조직이 치밀하게 형성되지 않는다.Sulfuric acid in the coating composition for a printed circuit board according to the present invention is used at 0.1-30 v%, preferably 1.0-15 v%, based on 98% sulfuric acid. If the amount of sulfuric acid is less than 0.1 v%, it is difficult to form a film. If the amount of sulfuric acid is 30 v% or more, the structure of the film is not formed densely.
유기산은 조성물의 총 중량에 대하여 0.01-10wt%, 바람직하게는 0.01-5 wt%, 보다 바람직하게는 0.05-2.5wt%를 사용한다. 0.01wt% 미만인 경우 그 작용이 미미하며 10wt% 이상인 경우 오히려 코팅막의 응집력이 약화된다.The organic acid uses 0.01-10 wt%, preferably 0.01-5 wt%, more preferably 0.05-2.5 wt% with respect to the total weight of the composition. If it is less than 0.01wt%, its effect is insignificant, and if it is more than 10wt%, the cohesion of the coating film is rather weakened.
유기산으로는 아세트산, 프로피온산, 글리콜산, 시트르산, 타르타르산, 말레인산,말론산, 숙신산, 프탈산, 벤조산, 아크릴산등 -COOH기를 최소 하나이상 포함하는 유기화합물이 사용되며 유기산의 무수물도 또한 사용할 수 있다.As the organic acid, an organic compound containing at least one -COOH group such as acetic acid, propionic acid, glycolic acid, citric acid, tartaric acid, maleic acid, malonic acid, succinic acid, phthalic acid, benzoic acid, acrylic acid is used, and anhydrides of organic acids may also be used.
과산화수소는 35% 과산화수소인 경우, 코팅 조성물의 총 부피에 대하여 0.1-15v%, 바람직하게는 1.0-10v%를 사용한다. 과산화수소의 양이 0.1 v% 미만인 경우 피막을 형성하기 어렵고, 15 v% 이상인 경우 동(Cu)의 에칭능력이 지나치게 활성화되어 생성된 피막이 균일하지 못할 뿐만 아니라 재용해의 위험도 따르게 된다.When hydrogen peroxide is 35% hydrogen peroxide, 0.1-15v%, preferably 1.0-10v%, relative to the total volume of the coating composition is used. If the amount of hydrogen peroxide is less than 0.1 v%, it is difficult to form a film. If the amount of hydrogen peroxide is more than 15 v%, the etching ability of copper (Cu) is excessively activated, resulting in an uneven film and a risk of re-dissolution.
질소화합물은 코팅 조성물의 총 중량에 대하여 0.1-30wt%, 바람직하게는 0.1-20 wt%, 보다 바람직하게는 0.5-15 wt%의 범위로 사용한다. 0.1 wt% 미만일 경우 코팅층이 지나치게 얇게 형성되며 30 wt% 이상일 경우 코팅층이 두꺼워져 밀착력을 저하시킨다.The nitrogen compound is used in the range of 0.1-30 wt%, preferably 0.1-20 wt%, more preferably 0.5-15 wt%, based on the total weight of the coating composition. If less than 0.1 wt% coating layer is formed too thin, if more than 30 wt% the coating layer is thickened to reduce the adhesion.
본 발명에 사용되는 질소화합물로는 유기화합물로서 우레아 및 티오-우레아 유도체, 질소를 포함하는 헤테로-고리 화합물, 특히 이미다졸, 트리아졸, 티아졸 및 그 유도체, 또는 =NH, -N=, -NH-, -NOH-, -N=N-, =N-S-N= 등과 같은 활성 질소를 포함하고 있는 화합물을 사용할 수 있다.Nitrogen compounds used in the present invention include urea and thio-urea derivatives as organic compounds, hetero-cyclic compounds containing nitrogen, in particular imidazole, triazole, thiazole and derivatives thereof, or = NH, -N =,- Compounds containing active nitrogen such as NH-, -NOH-, -N = N-, = NSN = and the like can be used.
규소화합물은 코팅 조성물의 총 중량에 대하여 0.01-10 wt%, 바람직하게는 0.1-5.0 wt%의 범위로 사용한다. 0.01 wt% 미만일 경우 코팅층의 결합력이 약해지고 10 wt% 이상일 경우 코팅층의 경화도가 지나치게 증대되어 밀착력을 저하시킨다.The silicon compound is used in the range of 0.01-10 wt%, preferably 0.1-5.0 wt%, based on the total weight of the coating composition. If it is less than 0.01 wt%, the bonding strength of the coating layer is weak, and if it is 10 wt% or more, the degree of curing of the coating layer is excessively increased to lower the adhesion.
본 발명에 사용되는 규소화합물로는 규산소다(Sodium Silicate : Na2SiO3, Na6Si2O7, Na2Si3O7), 규산(Silicic Acid, H2SiO3)등과 같은 무기규소화합물과 실라놀(R3SiOH, R2Si(OH)2, RSi(OH)3) 및 -Rx-Si-, -Rx-Si-O- 등과 같은 구조를 포함하는 유기 실란 및 그 유도체들로 여기서 Rx는 알킬 또는 기타 탄화수소기로 C1-C12범위의 화합물을 사용할 수 있다.Inorganic silicon compounds such as sodium silicate (Sodium Silicate: Na 2 SiO 3 , Na 6 Si 2 O 7 , Na 2 Si 3 O 7 ), silicic acid (H 2 SiO 3 ), and the like are used in the present invention. And organosilanes and derivatives thereof comprising structures such as silanol (R 3 SiOH, R 2 Si (OH) 2 , RSi (OH) 3 ) and -Rx-Si-, -Rx-Si-O- and the like. Rx may use a compound in the range of C 1 -C 12 as alkyl or other hydrocarbon group.
본 발명에 의한 코팅 조성물은 상기 화합물들 외에 그 반응성 및 신뢰성을 증대시키기 위해 다음의 첨가제들을 최소 일종 이상 포함한다.The coating composition according to the present invention contains at least one of the following additives in order to increase the reactivity and reliability in addition to the above compounds.
첨가제로는 균일한 착색피막을 얻기 위한 보조제(이하, 단지 '피막형성 보조제'라 한다.), 코팅반응의 구동력이 되는 구리의 에칭속도를 조절하기 위해 첨가되는 보조제(이하, 단지 '에칭속도 조절제'라 한다.), 반응촉진 및 피막의 생성을 보조하기 위한 촉진제(이하, 단지 '반응촉진제'라 한다.) 및 안정화제를 들 수 있다.As an additive, an auxiliary agent for obtaining a uniform colored film (hereinafter, simply referred to as an 'film forming aid') and an auxiliary agent added to control the etching rate of copper which is a driving force for the coating reaction (hereinafter, referred to as an 'etching rate adjusting agent') And accelerators (hereinafter referred to only as reaction promoters) and stabilizers to aid in reaction promotion and film formation.
피막형성 보조제로는 하이드로 퀴논(Hydro Quinone), 레조르시놀(Resorcinol), 피로카테올(Pyrocatehol), 피로가롤(Pyrogalol) 및 그 유도체들과 무기 및 유기 황화합물을 사용할 수 있다. 무기황화합물로는 황화합물의 암모늄염((NH4)2S 등) 또는알카리금속염(Na2S, K2S)과 유기황화합물로는 술포 술포네이트(Sulfo Sulfonate), 티오화합물로서 티오시아네이트(Thiocyanate)염류, 티오우레아(Thiourea) 및 그 유도체, 티오인산 및 그 염류, 티오글리콜산 및 그 염류, 티오술페이트(Thio Sulfate) 및 술포네이트(Sulfonate) 화합물과 메르캅토(Mercapto) 화합물 등 황을 포함하고 있는 모든 종류의 유기화합물을 사용할 수 있다.As an encapsulation aid, hydroquinone, resorcinol, pyrocatehol, pyrogalol and derivatives thereof, and inorganic and organic sulfur compounds may be used. Inorganic sulfur compounds include ammonium salts of sulfur compounds (such as (NH 4 ) 2 S) or alkali metal salts (Na 2 S, K 2 S) and sulfo sulfonates as organic sulfur compounds, and thiocyanate as thio compounds. Sulfur, such as salts, thiourea and derivatives thereof, thiophosphoric acid and salts thereof, thioglycolic acid and salts thereof, thiosulfate and sulfonate compounds and mercapto compounds, All kinds of organic compounds can be used.
한편, -S- 또는 -S-S-, -S-S-S-, R-S-, R-SH, R=S, R-S-(단 화학식 중 R은 탄소, 탄화수소, 또는 질소 및 이들을 포함하는 라디칼 혹은 화합물이다.) 등과 같은 활성황을 포함하는 황화합물이 보다 바람직하며 또한 황화합물 중 질소를 함유하는 것이 더욱 바람직한 것이다.On the other hand, -S- or -SS-, -SSS-, RS-, R-SH, R = S, RS- (wherein R is carbon, hydrocarbon, or nitrogen and radicals or compounds containing them) and the like. Sulfur compounds containing the same active sulfur are more preferred, and it is more preferable to contain nitrogen in the sulfur compounds.
위와 같은 피막형성 보조제는 코팅조성물의 중량을 기준으로 0.1-20wt%, 바람직하게는 0.1-15 wt%, 보다 바람직하게는 0.5-10 wt%의 양으로 사용한다. 0.1 wt% 이하로 사용할 경우 그 효력이 미미하며 20 wt% 이상일 경우 피막형성 반응을 방해하거나 피막의 결합력을 저하시킨다.The above film forming auxiliary agent is used in an amount of 0.1-20 wt%, preferably 0.1-15 wt%, more preferably 0.5-10 wt%, based on the weight of the coating composition. If it is used at less than 0.1 wt%, its effect is insignificant, and if it is more than 20 wt%, it prevents the film forming reaction or lowers the bond strength of the film.
에칭속도 조절제로는 N-메틸-2-피롤리돈, N-시클로헥실-2-피롤리돈, 2-피롤리돈, 디메틸포름아미드, 디메틸 아세트아미드, 테트라하이드로 퓨란, 아세토니트릴, 디옥산, 알킬 락테이트, 알킬 글리콜레이트, 알킬 포스페이트, 케톤 및 알콜등으로 구성되는 그룹으로부터 선택된 극성용매를 단독 또는 혼합하여 사용한다.Etch rate regulators include N-methyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, 2-pyrrolidone, dimethylformamide, dimethyl acetamide, tetrahydrofuran, acetonitrile, dioxane, Polar solvents selected from the group consisting of alkyl lactates, alkyl glycolates, alkyl phosphates, ketones, alcohols and the like are used alone or in combination.
상기 에칭속도 조절제는 코팅조성물의 중량을 기준으로 0.1-30 wt%, 바람직하게는 0.1-20 wt%, 보다 바람직하게는 0.5-10 wt%의 범위로 사용한다. 0.1 wt% 이하로 사용할 경우 에칭속도에 영향을 주지 못하며 30 wt% 이상으로 사용할 경우 에칭되는 동의 용해도를 현저하게 감소시킨다.The etching rate control agent is used in the range of 0.1-30 wt%, preferably 0.1-20 wt%, more preferably 0.5-10 wt% based on the weight of the coating composition. When used below 0.1 wt%, the etching rate is not affected. When used above 30 wt%, the solubility of copper etched is significantly reduced.
반응 촉진제로는 암모늄, 소디움, 포타슘 퍼옥시설페이트와 같은 퍼설페이트류, 소디움, 포타슘 퍼옥시 모노설페이트와 같은 모노설페이트류; NaClO3, KClO3, NH4Cl, FeCl3, CuCl2와 같은 염소산염 및 염산을 포함하는 염화물류; 질산 또는 질산나트륨, 질산칼륨, 질산암모늄과 같은 질산염; 인산 또는 인산염; 질산철, 황산철, 시트르산철과 같은 3 가 철염; 으로 구성되는 그룹으로부터 선택된 하나 또는 그 이상의 화합물을 코팅조성물의 중량을 기준으로 0.1-20wt%, 바람직하게는 0.1-15 wt%, 보다 바람직하게는 0.5-10 wt%의 범위로 사용한다. 0.1 wt% 이하로 사용할 경우 반응촉진 효력이 미미하며 20 wt% 이상으로 사용할 경우 피막색상을 전체적으로 흐리게 만들며 균일한 색상을 얻기 힘들다.Reaction accelerators include: persulfates such as ammonium, sodium, potassium peroxulate, monosulfates such as sodium, potassium peroxy monosulfate; Chlorides including chlorate and hydrochloric acid such as NaClO 3 , KClO 3 , NH 4 Cl, FeCl 3 , CuCl 2 ; Nitrates or nitrates such as sodium nitrate, potassium nitrate, ammonium nitrate; Phosphoric acid or phosphate salts; Trivalent iron salts such as iron nitrate, iron sulfate and iron citrate; One or more compounds selected from the group consisting of are used in the range of 0.1-20 wt%, preferably 0.1-15 wt%, more preferably 0.5-10 wt%, based on the weight of the coating composition. When it is used below 0.1 wt%, reaction promoting effect is insignificant. When it is used above 20 wt%, the film color is blurred overall and it is difficult to obtain uniform color.
안정화제로는 NTA(Nitrilo Triacetic Acid) 및 그 금속염, EDTA 및 그 금속염, DPTA 및 그 금속염 등과 같은 킬레이트제를 코팅조성물의 부피를 기준으로 0.1-20g/l, 바람직하게는 1-5 g/l의 양으로 사용한다.Stabilizers include chelating agents such as Nitrilo Triacetic Acid (NTA) and its metal salts, EDTA and its metal salts, DPTA and its metal salts, such as 0.1-20 g / l, preferably 1-5 g / l, based on the volume of the coating composition. Use in quantity.
0.1 g/l이하로 사용할 경우 과산화수소를 보호하는 작용이 미미하며 20 g/l이상으로 사용할 경우 동의 에칭속도가 현저하게 감소된다.If it is used below 0.1 g / l, the effect of protecting hydrogen peroxide is insignificant. If it is used above 20 g / l, the copper etching rate is significantly reduced.
상기 본 발명의 코팅 조성물은 종래 다층인쇄회로기판(MLB)의 흑화처리공정에서 행하여 지던 소프트-에칭(Soft-etching), 산처리, 환원처리공정을 거칠 필요없이 내층기판을 세정 및 수세한 후 기판에 적용함으로써 동회로에 흑갈색막을 형성하여 내산성 및 적층시 부여하게 된다.The coating composition of the present invention is a substrate after washing and washing the inner layer substrate without the need to go through the soft-etching, acid treatment, reduction process that has been performed in the conventional blackening process of the multilayered printed circuit board (MLB) substrate When applied to, a black-brown film is formed in the copper circuit to impart acid resistance and lamination.
또한, 상기 본 발명의 코팅조성물은 기판의 표면처리, 레이져 드릴, 롤코터, 드리이필름의 밀착, 인쇄회로 잉크나 열경화성 잉크으 접착력 증대에 적용된다.In addition, the coating composition of the present invention is applied to the surface treatment of the substrate, laser drill, roll coater, dry film adhesion, printed circuit ink or thermosetting ink to increase the adhesion.
이하, 본 발명의 실시예에 대하여 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail.
다음 실시예는 일반적인 공정조건에서 행하였으며, 작업조건의 변화에 따라 각 조성물의 농도는 정하여진 범위에서 특정한 제한없이 다양하게 변화시킬 수 있으며 본 발명을 하기 실시예로서 한정하는 것은 아니다.The following examples were performed under general process conditions, and the concentration of each composition according to the change in the working conditions can be variously changed without particular limitation in a predetermined range, and the present invention is not limited to the following examples.
실시예Example
다음의 각 실시예에서는 50 ℃에서 3 분간 HD 250(알카리 탈지제)에서 탈지한 후 수세하고 화성피막(Conversion Coating) 조성액을 보호하고 구리표면을 활성화하기 위하여 과산화수소 30㎖/ℓ, 황산 5㎖/ℓ, 인산 1g/ℓ, 초산 0.1g/ℓ 및 2-메르캅토 피리딘 25g/ℓ의 혼합물로된 예비침적 조성액에 25 ℃에서 1 분간 예비침적(Pre-dip) 처리한 후 동박(Copper Foil)과 라미네이트 코어 시편(20×30 cm)에 다음 하기 표 1-1 내지 표 3-1의 각 조성물을 적용하여 화성피막 처리를 행하였으며 그 결과를 하기 표 1-2 내지 3-2에 나타내었다.In each of the following examples, 30 ml / l hydrogen peroxide and 5 ml / l sulfuric acid were degreased in HD 250 (alkaline degreasing agent) for 3 minutes at 50 ° C., followed by washing with water to protect the conversion coating composition and activating the copper surface. Pre-dip at 25 ° C. for 1 minute in a pre-preparation composition consisting of a mixture of 1 g / l phosphoric acid, 0.1 g / l acetic acid and 25 g / l 2-mercapto pyridine, followed by copper foil and laminate. To the core specimen (20 × 30 cm) was applied to each composition of the following Table 1-1 to Table 3-1 was subjected to the chemical coating treatment and the results are shown in Table 1-2 to 3-2.
처리 후 동박 및 라미네이트 코어는 수세하고 100℃에서 30 분간 건조한 후 다음과 같은 조건으로 적층하였다.After the treatment, the copper foil and the laminate cores were washed with water and dried at 100 ° C. for 30 minutes, and then laminated under the following conditions.
<적층조건><Lamination Conditions>
프리프레그 1080 2 장(다작용성 에폭시 수지 140℃ Tg)2 pieces of prepreg 1080 (140 degrees Celsius Tg multifunctional epoxy resin)
압력 30kg/㎠Pressure 30kg / ㎠
성형온도 185 ℃Molding temperature 185 ℃
시간 170 분170 minutes
한편, 구리호일 및 라미네이트 코어 시편에 화성피막 조성물로 화성피막 처리한 후, 인쇄회로기판의 외관, 접착강도 및 열충격에 대하여 측정하였다.Meanwhile, after coating the copper foil and the laminated core specimens with the chemical conversion coating composition, the external circuit, the adhesive strength and the thermal shock of the printed circuit board were measured.
인쇄회로기판의 외관은 육안관찰하였다.The appearance of the printed circuit board was visually observed.
접착강도는 코팅된 동박을 내층(CCL 원판) 1매와 프리프레그(1080) 상하 2매와 적층성형하고 성형물에 폭 1cm인 테이프를 붙인다음 동박을 제거하고 테이프를 기준으로 좌,우 1cm폭을 두고 잘라서 3cm길이의 시편을 제작한 후, 테이프 및 동박을제거한후 상기 시편의 인장강도를 측정함으로써 측정하였다.The adhesive strength is formed by laminating a coated copper foil with one inner layer (CCL disc) and two upper and lower prepregs (1080), attaching a 1cm wide tape to the molding, and removing the copper foil. After cutting to prepare a specimen of 3cm length, after removing the tape and copper foil was measured by measuring the tensile strength of the specimen.
또한, 적층 후의 라미네이트 코어에 대하여는 열충격(Solder Shock)시험을 행하였으며, 열충격시험은 납(Pb)을 용해시킨 260℃ 및 288℃조에 적층성형된 시편 및 최종완성된 회로기판을 각각 20초(1사이클, 260℃), 10초(1사이클 288℃) 침적 및 부유시킨후 파괴검사(Micro-Section)하여 라미네이트 들뜸(Delamination)과 손상(Laminate Void)의 유·무를 금속 현미경으로 관찰하였다.In addition, a thermal shock test was performed on the laminated core after lamination, and the thermal shock test was carried out for 20 seconds (1 second) for the specimens laminated in the 260 ° C and 288 ° C baths in which lead (Pb) was dissolved and the finished circuit board. Cycle, 260 ° C.), 10 seconds (1 cycle 288 ° C.) was deposited and suspended, followed by micro-section to observe whether the laminate was lifted or damaged with a metal microscope.
실시예 1Example 1
하기 표 1a의 화성피막 조성액을 준비한 후, 상기한 바와 같이 알카리 탈지 및 예비 침적 처리를 한 동박 및 라미네이트 코어 시편을 화성피막 조성액의 온도를 30℃, 35℃ 및 40℃로 변화시키면서 조성액에 3 분간 침지하여 화성피막 처리를 하였다. 이 때 조성액은 약 0.1 m/sec의 속도로 교반하였다.After preparing the chemical conversion composition of Table 1a, the copper foil and laminate core specimens subjected to alkali degreasing and preliminary deposition treatment as described above were changed to the composition solution while changing the temperature of the chemical composition composition to 30 ° C, 35 ° C and 40 ° C for 3 minutes. It was immersed and subjected to chemical treatment. At this time, the composition liquid was stirred at a speed of about 0.1 m / sec.
상기 표 1b의 결과에서 알수있는 바와 같이, 본원발명에 의한 화성피막 조성물로 코팅함으로써 충분한 강도를 갖는 갈색의 산화피막이 형성되었으며 또한 라미네이트 들뜸 및 손상이 없었다.As can be seen from the results of Table 1b, a brown oxide film having sufficient strength was formed by coating with the chemical conversion film composition according to the present invention, and there was no laminate lifting and damage.
실시예 2Example 2
하기 표 2a의 화성피막 조성액을 준비한 후 상기 실시예에 기술한 바와 같이 알카리 탈지 및 예비침적 처리한 동박 및 라미네이트 코어시편을 코팅처리 시간을 2 분, 3 분 및 4 분으로 변화시켜가면서 코팅처리하였으며 그 결과를 하기 표 2b에 나타내었다. 이 때 코팅액의 온도는 35 ℃로 고정하였으며, 이 때 조성액은 약 0.1 m/sec의 속도로 교반하였다.After preparing the chemical composition composition of Table 2a, the copper foil and the laminate core specimens subjected to the alkali degreasing and preliminary deposition as described in the Examples were coated while changing the coating treatment time to 2 minutes, 3 minutes, and 4 minutes. The results are shown in Table 2b below. At this time, the temperature of the coating liquid was fixed at 35 ° C., and the composition liquid was stirred at a speed of about 0.1 m / sec.
상기 표 2b의 결과에서 알수있는 바와 같이, 본원발명에 의한 화성피막 조성물로 화성코팅 처리함으로써 충분한 강도를 갖는 흑갈색의 산화피막이 형성되었으며 또한 라미네이션 들뜸 및 라미네이트공극이 없었다.As can be seen from the results of Table 2b, a black-brown oxide film having sufficient strength was formed by chemical conversion coating with the chemical conversion composition according to the present invention, and there was no lamination lifting and lamination pores.
실시예 3Example 3
하기 표 3a의 화성피막 조성액을 준비한 후 상기 실시예에 기술한 바와 같이 전처리한 동박 및 라미네이트 코어시편을 코팅처리하였으며, 이 때 조성물의 교반조건을 정체, 0.1 m/s 및 0.2 m/s로 변화시켜 가면서 시편을 처리하였으며 그 결과를 하기 표 3b에 나타내었다. 이 때 코팅액의 온도는 35 ℃로 고정하였으며 시편은 3 분간 침적하였다.After preparing the chemical composition composition of Table 3a, the pretreated copper foil and laminate core specimens were coated as described in the Examples, and the stirring conditions of the composition were changed to stagnation, 0.1 m / s and 0.2 m / s. The specimens were treated as they were, and the results are shown in Table 3b. At this time, the temperature of the coating liquid was fixed at 35 ℃ and the specimen was deposited for 3 minutes.
상기 표 3b의 결과에서 알수있는 바와 같이, 본원발명에 의한 컨버젼 코팅조성물로 컨버젼 코팅함으로써 충분한 강도의 갈색 산화피막이 형성되었으며 또한 라미네이션 들뜸 및 라미네이트 손상이 없었다.As can be seen from the results of Table 3b, a brown oxide film of sufficient strength was formed by conversion coating with the conversion coating composition according to the present invention, and there was no lamination lift and laminate damage.
실시예 4Example 4
다음 각 항목에 대하여 본 발명에 의한 화성피막조성물을 사용하여 화성피막처리한 인쇄회로기판의 환경시험을 행하였다.For each of the following items, an environmental test was conducted on a printed circuit board subjected to chemical conversion using the chemical conversion composition according to the present invention.
본 실시예에서는 5% 250™을 사용하여 50℃에서 3∼5분간 세척하고 40∼50℃에서 1분간 예비침지 하였으며, 40℃에서 3분간 화성피막처리하였다. 그외에 공정은 상기 실시예에 기재한 바와 같이 행하였으며, 예비침적조성물은 실시예에 화성피막 조성물은 실시예 3에 기재된 조성물을 각각 사용하였다.In this example, 5% 250 ™ was used to wash for 3 to 5 minutes at 50 ° C, preliminary immersion at 40 to 50 ° C for 1 minute, and chemical conversion treatment at 40 ° C for 3 minutes. In addition, the process was performed as described in the said Example, and the prepositioned composition used the composition of Example 3 for the chemical conversion film composition for the Example, respectively.
JIS 시험기준에 의거하여 열충격성시험(Thermal Stress-Solder), 기상시험(Air to Air Thermal Cycle), 액상시험(Liquid to Liquid Thermal Shock) 및 항온·항습시험(High Temp. Humidity Test)를 행하였으며, 각각 JIS시험기준에서 요구하는 물성을 통과하는 양호한 특성을 나타내었다.In accordance with the JIS test standards, thermal stress-solder, air to air thermal cycle, liquid to liquid thermal shock, and high temp. And humidity test were performed. , And exhibited good characteristics of passing the physical properties required by the JIS test standard.
본 발명에 의한 인쇄회로기판용 화성피막 조성물을 사용함으로써 종래의 흑화처리에 비하여 짧은 시간에 단축된 처리공정으로 낮은 온도에서 흑화처리 할 수 있으며, 또한 본 발명에 의한 화성피막(Conversion Coating) 조성물로 처리된 인쇄회로기판은 우수한 내산성 및 접착강도를 나타낸다. 더욱이 환원처리 공정이 생략됨으로써 종래 사용되던 고가의 환원처리 약품의 사용이 배제되고 폐수 발생량이 50 % 이상 감소되어 더욱 경제적인 것이다.By using the chemical conversion coating composition for a printed circuit board according to the present invention, it is possible to perform blackening at a low temperature by a shortening process in a short time compared to the conventional blackening treatment, and also to the conversion coating composition according to the present invention. Treated printed circuit boards exhibit excellent acid resistance and adhesion strength. Furthermore, the elimination of the reduction treatment eliminates the use of expensive reduction treatment chemicals, which are conventionally used, and is more economical because the amount of wastewater generated is reduced by 50% or more.
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KR1019990027787A KR100321021B1 (en) | 1999-07-09 | 1999-07-09 | Nitric and silicide compound based conversion coating composition for printed circuit boards |
US09/612,655 US6475299B1 (en) | 1999-07-09 | 2000-07-07 | Conversion coating composition based on nitrogen and silicon compounds and conversion coating method using the same |
JP2000208996A JP3421304B2 (en) | 1999-07-09 | 2000-07-10 | Chemical conversion film composition and chemical conversion film forming method using the same |
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KR101849622B1 (en) * | 2014-09-09 | 2018-04-18 | 차이나 내셔널 일렉트릭 애퍼레터스 리서치 인스티튜트 | Method and reagent for recovering rare/inert metals from bottom electroplating copper/nickel material |
CN112064003B (en) * | 2020-08-20 | 2022-06-17 | 华帝股份有限公司 | Pretreatment agent and preparation method and application thereof |
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