KR100309905B1 - How to measure coma aberration of lens - Google Patents
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- KR100309905B1 KR100309905B1 KR1019980039520A KR19980039520A KR100309905B1 KR 100309905 B1 KR100309905 B1 KR 100309905B1 KR 1019980039520 A KR1019980039520 A KR 1019980039520A KR 19980039520 A KR19980039520 A KR 19980039520A KR 100309905 B1 KR100309905 B1 KR 100309905B1
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- 206010010071 Coma Diseases 0.000 title claims abstract description 21
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- 210000001747 pupil Anatomy 0.000 claims abstract description 20
- 238000001459 lithography Methods 0.000 claims abstract description 3
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- 206010073261 Ovarian theca cell tumour Diseases 0.000 abstract description 13
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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Abstract
본 발명은 렌즈의 코마수차 측정방법에 관한 것으로, 반도체 리소그라피 장비인 스테퍼나 스캐너 등에 장착되는 렌즈의 회절한계 시스템에서, 애퍼처의 중앙에 위치하는 센터홀과 상기 센터홀의 주위로 다수개의 작은 크기의 홀을 애퍼처상에 형성하고, 상기 다수개의 홀들 중 하나의 홀만을 개방시킨 상태에서 상기 각 홀을 따라 노광을 각각 실시한 다음, 상기 각 홀을 통해 렌즈 출구 퓨필상에 형성되는 웨이브프런트 정보를 차례로 측정한 후, 센터홀과 원하는 홀간의 상대적인 웨이브프런트 차를 측정함에 의해 렌즈의 코마수차를 측정함으로써, 패턴의 중첩도에 영향을 미칠 수 있는 렌즈의 코마수차 인자를 정량화시켜 반도체 소자의 제조 공정수율을 향상시킬 수 있으며, 스테퍼나 스캐너의 렌즈를 장비에 장착한 후, 수시로 렌즈의 코마수차를 측정할 수 있다.The present invention relates to a method for measuring coma aberration of a lens, and in a diffraction limit system of a lens mounted in a stepper or a scanner, which is a semiconductor lithography equipment, a center hole positioned at the center of an aperture and a plurality of small sizes around the center hole. A hole is formed on the aperture, and exposure is performed along each hole while only one of the plurality of holes is opened, and then wavefront information formed on the lens exit pupil is sequentially measured through the holes. Then, the coma aberration of the lens is measured by measuring the relative wavefront difference between the center hole and the desired hole, thereby quantifying the coma aberration factor of the lens which may affect the degree of overlap of the pattern, thereby increasing the manufacturing process yield of the semiconductor device. After attaching the lens of the stepper or scanner to the equipment, the coma aberration of the lens can be It can be determined.
Description
본 발명은 렌즈의 코마수차(coma aberration) 측정방법에 관한 것으로, 특히 애퍼처상에 다수개의 홀을 형성하고, 상기 홀을 통해 노광을 실시하여 렌즈 출구 퓨필(lens exit pupil)상에 형성되는 웨이브프런트(wavefront) 정보를 이용하여 패턴의 중첩도(pattern registration)에 영향을 미칠 수 있는 렌즈의 코마수차 인자를 정량화시켜 반도체 소자의 제조 공정수율을 향상시킬 수 있는 렌즈의 코마수차 측정방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring coma aberration of a lens, and in particular, a plurality of holes are formed on an aperture, and a wavefront is formed on a lens exit pupil by performing exposure through the holes. The present invention relates to a method for measuring coma aberration of a lens capable of improving manufacturing process yield of a semiconductor device by quantifying a coma aberration factor of a lens that may affect pattern registration using wavefront information.
일반적으로 반도체나 액정 디스플레이(Liquid Crystal Display; 이하 LCD 라 함) 제조 공정에 있어서, 패턴의 중첩도에 관여하는 투영렌즈(Projection lens)의 수차는 왜곡(Distortion)과 코마수차의 두가지 형태가 있다.In general, in a semiconductor or liquid crystal display (hereinafter referred to as LCD) manufacturing process, aberrations of a projection lens involved in the degree of overlap of patterns are divided into two types, distortion and coma.
렌즈의 코마수차를 측정하기 위한 종래의 기술에 있어서는, 스테퍼(Stepper)나 스캐너(Scanner)의 투영렌즈가 일단 툴(Tool)에 장착이 되면 달리 측정할 방법이 없었다. 단지 레지스터 패턴이 형성된 후, 형성된 패턴의 변형정도(misregistration)를 통한 간접적인 방법을 이용하여 렌즈의 웨이브프런트를 개략적으로 짐작하여 렌즈 조정을 실시하였다.In the prior art for measuring the coma aberration of the lens, once the projection lens of the stepper or the scanner is attached to the tool, there is no method to measure otherwise. After only the resist pattern was formed, lens adjustment was performed by roughly guessing the wavefront of the lens by using an indirect method through the misregistration of the formed pattern.
그러나 상기한 방법은 렌즈 전체의 웨이브프런트를 파악하기가 어렵고, 측정에 이용되지 않은 다른 애퍼처(Aperture)를 이용한 패터닝의 경우에는 코마수차의 수정이 잘 이루어지지 않는 문제점이 있다.However, the above method has a problem in that it is difficult to grasp the wavefront of the entire lens, and in the case of patterning using other apertures not used for measurement, coma aberration is not well corrected.
따라서 본 발명은 상기한 문제점을 해결하기 위하여, 렌즈의 입사동(pupil site)에서 아주 작은 영역에 빛을 투과시키도록 애퍼처를 제조하고, 상기 영역에서의 독립적인 웨이브프런트 정보가 정확하게 웨이퍼 사이트에 떨어지도록 하여 렌즈 출구 퓨필상에 형성되는 웨이브프런트 정보를 차례로 측정한 후, 센터홀과 원하는 홀간의 상대적인 웨이브프런트 차를 측정함에 의해 렌즈의 코마수차를 측정함으로써, 패턴의 중첩도에 영향을 미칠 수 있는 렌즈의 코마수차 인자를 정량화시켜 반도체 소자의 제조 공정수율을 향상시킬 수 있는 렌즈 코마수차 측정방법을 제공함에 그 목적이 있다.Therefore, in order to solve the above problem, the present invention manufactures an aperture to transmit light in a very small area in the pupil site of the lens, and independent wavefront information in the area is accurately transferred to the wafer site. By measuring the wavefront information formed on the lens exit pupil in turn and then measuring the relative wavefront difference between the center hole and the desired hole, the coma aberration of the lens can be measured, thereby affecting the degree of overlap of the pattern. It is an object of the present invention to provide a method for measuring lens coma aberration, which can improve the manufacturing process yield of a semiconductor device by quantifying the coma aberration factor of a lens.
도 1 은 본 발명의 방법에 따른 회절한계 시스템(Diffraction limited system)의 장치 구성을 도시한 개략도1 is a schematic diagram showing an apparatus configuration of a diffraction limited system according to the method of the present invention
도 2 는 본 발명의 방법에 따라 코마수차 측정시 사용되는 애퍼처의 평면도2 is a plan view of an aperture used in measuring coma aberration according to the method of the present invention.
도 3 은 애퍼처 상에 형성된 센터홀과 측정위치의 홀을 도시한 도면3 is a view showing a center hole formed on an aperture and a hole of a measuring position;
도 4 는 렌즈의 입사동(lens pupil site)에 떨어지는 고차의 회절패턴을 도시한 도면FIG. 4 shows a high order diffraction pattern falling at the lens pupil site of the lens; FIG.
도 5a 내지 도 5c 는 렌즈 입사동에 형성된 웨이브프런트 수차의 홀 위치에 따른 분포를 도시한 도면5A to 5C are diagrams showing the distribution according to the hole position of the wavefront aberration formed in the lens entrance pupil;
도 6의 (a) 는 본 발명의 기술에 따라 렌즈상에 패턴을 구현할 때, 이상적인 한 점에서 벗어난 웨이브 프런트를 나타낸 그래프6 (a) is a graph showing a wave front deviating from an ideal point when implementing a pattern on a lens according to the technique of the present invention.
도 6 (b) 는 상기 도 6 (a) 의 시뮬레인션시 사용된 렌즈 퓨필의 형성상태를 도시한 도면FIG. 6 (b) is a view showing a state of formation of the lens pupil used in the simulation of FIG.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1 : 애퍼처 3 : 집속렌즈(condenser lens)1: Aperture 3: condenser lens
4a : 센터홀(center hole) 4n : 홀4a: center hole 4n: hole
5 : 마스크(reticle) 7 : 렌즈 입사동(pupil site)5: mask (reticle) 7: lens pupil site (pupil site)
9 : 애퍼처 이미지(aperture image)9: aperture image
상기 목적을 달성하기 위한 본 발명의 렌즈 코마수차 측정방법은,Lens coma aberration measurement method of the present invention for achieving the above object,
리소그라피 장비의 광학계에 있어서, 애퍼처의 중앙에 위치하는 센터홀과 상기 센터홀의 주위로 다수개의 작은 크기의 홀을 에퍼처상에 형성하는 단계와,In the optical system of the lithography equipment, forming a center hole located in the center of the aperture and a plurality of small sized holes on the aperture around the center hole,
상기 다수개의 홀들 중 하나의 홀만을 개방시킨 상태에서 상기 각 홀을 따라 노광을 각각 실시하는 단계와,Performing exposure along each of the holes while only one of the plurality of holes is opened;
상기 각 홀을 통해 렌즈 출구 퓨필상에 형성되는 웨이브프런트 정보를 차례로 측정하는 단계와,Sequentially measuring wavefront information formed on the lens exit pupil through the holes;
상기 센터홀과 원하는 홀간의 상대적인 웨이브프런트 차를 측정하여 렌즈의 코마수차를 측정하는 단계를 포함한 구성으로 됨을 특징으로 한다.And measuring coma aberration of the lens by measuring a relative wavefront difference between the center hole and the desired hole.
이하 첨부된 도면을 참조하여 본 발명에 대한 상세한 설명을 하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 1 은 본 발명의 방법에 따른 회절한계 시스템(Diffraction limited system)의 장치 구성을 도시한 개략도이고,1 is a schematic diagram showing an apparatus configuration of a diffraction limited system according to the method of the present invention;
도 2 와 도 3 은 상기 도 1 의 시스템에서 렌즈의 코마수차를 측정하는 방법을 설명하기 위한 도면으로서, 코마수차 측정시 사용되는 애퍼처를 도시한 도면이다.2 and 3 are views for explaining a method of measuring the coma aberration of the lens in the system of FIG. 1, the aperture is used when measuring the coma aberration.
상기 도면을 참조하면, 애퍼처(1)는 그대로 렌즈 입사동(7)에서 애퍼처 상(Aperture Image)(9)이 맺히게 되는데, 렌즈 입사동(7)의 크기가 1 일 때 애퍼처(1)도 1의 크기를 갖는 것이 이상적이기는 하나 기계적으로 형성하기가 어려운 경우가 많다.Referring to the drawings, the aperture 1 is formed as the aperture image 9 in the lens entrance pupil 7 as it is, when the size of the lens entrance pupil 7 is 1 ) Is ideally sized to 1, but often difficult to form mechanically.
상기의 경우, 고차의 시그마(σ)(High sigma)의 최대 애퍼처를 택하여 사용한다. 이때 상기 σ 는 (애퍼처 상(7)의 지름 / 렌즈(7) 지름) 의 값으로 정의된다.In this case, the maximum aperture of high sigma (σ) is selected and used. Is defined as a value of (diameter of aperture image 7 / diameter of lens 7).
한편, 코마수차 측정시 사용되는 중첩마크(overlay mark)는 패턴 사이즈가 (λ/NA) 값보다 매우 큰 조건, 예컨데 5배 이상이 되는 조건으로 하며, 노광시에는 상기 애퍼처(1)상에 형성된 다수개의 홀(4a,--4n)폴중 하나의 홀만 개방시키고 나머지 홀은 가린 상태에서 실시한다.On the other hand, the overlay mark used for coma aberration measurement is a condition in which the pattern size is very large than (λ / NA) value, for example, 5 times or more, and on the aperture 1 during exposure. Only one of the plurality of formed holes 4a and -4n poles is opened and the other holes are performed in a closed state.
그리고 애퍼처(1)의 중앙에 위치한 홀(4a)을 기준위치(reference position)로 설정하고, 나머지 각각의 홀(3b, --3n)에 대해 노광하여 기준홀에 대한 측정하고자 하는 위치의 홀간의 상대적인 패턴 중첩도(misregistration)를 측정한다.The hole 4a located at the center of the aperture 1 is set as a reference position, and the holes of the position to be measured with respect to the reference hole are exposed by exposing the remaining holes 3b and −3n. The relative misregistration of the liver is measured.
도 3 은 상기와 같이 중심부에 위치한 하나의 홀(3a)을 기준점(reference wavefront)으로 하고 측정하고자 하는 다른 하나의 홀(3n)을 도시한 도면이다.FIG. 3 is a view showing one hole 3a located at the center as a reference wavefront and the other hole 3n to be measured as described above.
이때, 상기 측정위치의 홀(3n)은 측정하고자 하는 렌즈의 위치가 되는 것이다.At this time, the hole (3n) of the measuring position is to be the position of the lens to be measured.
한편, 상기에서 애퍼처(1)는 서로 혼합하여 사용될 수 있으며, 이 경우 혼합하여 사용되는 애퍼처로는 스몰 σ(Small sigma)의 애뉼러 애퍼처(Annular Aperture) 또는 스몰 σ의 쿼드로폴 애퍼처(Quadrupole Aperture)로 한다.Meanwhile, the aperture 1 may be used by mixing with each other. In this case, the aperture used by mixing may be an annular aperture of small sigma or a quadropole aperture of small σ. (Quadrupole Aperture)
또한 애퍼처(1)상에 형성되는 홀(3a, -- 3n)의 크기는 0.2r (r : 렌즈 퓨필의 반경)보다 작게 하고, 설치되는 홀(3a, -- 3n)의 수는 5개 이상이 되도록 한다.In addition, the size of the holes 3a and -3n formed on the aperture 1 is smaller than 0.2r (r: radius of the lens pupil), and the number of the holes 3a and 3n to be installed is five. Make it ideal.
도 4 는 렌즈의 입사동에 떨어지는 고차(high order)의 회절 패턴을 도시한 도면이다.FIG. 4 is a diagram showing a high order diffraction pattern falling at the entrance pupil of the lens. FIG.
상기 도면을 참조하면, 렌즈(7)의 퓨필에서는 애퍼처의 상이 그대로 전사되어 지는데, 이때 그 주위의 웨이브프런트 정보를 담고있는 광 번들(Ray bundle)이 코마수차 정도 만큼의 오류중첩을 유발하게 된다.Referring to the drawings, in the pupil of the lens 7, the image of the aperture is transferred as it is, where the Ray bundle containing the wavefront information around it causes an error overlap as much as coma aberration. .
또한 필드상의 임의의 점에서 왜곡에 의한 오류중첩의 항을 제거해주게 되면 코마수차 값을 알 수 있다.Also, if the term of error overlap due to distortion is removed at any point on the field, the coma aberration value can be known.
한편, 상기 도면에 도시된 회절패턴에 있어서, 0차 ∼2차 까지의 영역 즉, 홀(3a 또는 3n) 직경의 10% 이내 영역에서는 약 94% 정도의 에너지가 투사된다.On the other hand, in the diffraction pattern shown in the figure, about 94% of energy is projected in the areas from 0th order to the 2nd order, that is, within 10% of the diameter of the holes 3a or 3n.
그리고 상기 퓨필이 렌즈의 외부에 있는 경우, 퓨필에 조명계에 있는 애퍼처와 같은 구조물을 배치하여 측정하도록 한다.If the pupil is outside the lens, the pupil is measured by placing a structure such as an aperture in the illumination system.
도 5a 내지 도 5c 는 렌즈상에 웨이브프런트 수차를 매핑화한 것으로, 각 홀간에 웨이브프런트 수차의 차이가 있음을 알 수 있다.5A to 5C are mappings of wavefront aberrations on a lens, and it can be seen that there is a difference in wavefront aberrations between holes.
한편, 도 6 의 (a) 는 렌즈상에 패턴을 구현할 때, 이상적인 한 점에서 벗어난 정도를 시뮬레이션한 결과를 그래프로 나타낸 것이다.On the other hand, Figure 6 (a) shows the result of the simulation of the degree of deviation from the ideal point when implementing the pattern on the lens as a graph.
즉 상기 그래프는 한 예로서, 도 6 의 (b)에 도시한 바와 같이, 렌즈퓨필상의 중심홀(3a)을 트레이싱(tracing)하는 노광조건으로 약 1㎛ 정도로 이격된 패턴을 구현할 때, 수차가 없는 동일한 노광조건에서의 패턴으로부터 벗어난 정도를 나타내고 있다.That is, as shown in FIG. 6B, the graph shows an aberration when the pattern spaced about 1 μm is realized under an exposure condition for tracing the center hole 3a on the lens pupil. The degree of deviation from the pattern under the same exposure conditions without is shown.
또한, 보다 정밀한 코마수차를 측정하기 위해 렌즈의 애퍼처 스톱에서 소정크기 예컨데, 0.2r (r:애퍼처 스톱의 반경)보다 작은 홀을 통해 렌즈의 정보를 보내고, 센터홀과의 상대적인 중첩도를 측정함으로써 얻을 수 있다.Also, in order to measure more precise coma aberration, the lens sends information of the lens through a hole smaller than a predetermined size, for example, 0.2r (r: radius of the aperture stop), and shows the relative overlap with the center hole. It can obtain by measuring.
상기 도 6 의 (a)에 도시된 그래프에 있어서, X-축은 홀의 중심 위치를, Y-축은 오류 중첩도를 나타낸다.In the graph shown in (a) of FIG. 6, the X-axis represents the center position of the hole and the Y-axis represents the error overlapping degree.
한편, 상기와 같은 본 발명의 기술은 반도체 소자의 제조뿐만 아니라 다른 정교한 렌즈의 코마 어블레이션 측정시에도 사용될 수 있다.On the other hand, the technique of the present invention as described above can be used not only in the manufacture of semiconductor devices but also in the coma ablation measurement of other sophisticated lenses.
이상 상술한 바와같은 본 발명의 방법에 따라, 회절 한계 시스템에서 코마 수차를 정량적으로 측정하여 렌즈의 출구상에서 웨이브프런트 수차를 매핑화하여 패턴의 중첩도에 영향을 미칠 수 있는 코마수차의 인자를 정량화시킴으로써 반도체 소자의 제조수율을 향상시킬 수 있으며, 스테퍼나 스캐너의 렌즈를 제작한 이후 장비에 장착하면, 지금까지는 이들 장비의 렌즈 코마수차를 정량화하는 것이 불가능하였지만 본 발명으로 수시로 렌즈의 코마수차를 측정할 수 있다.According to the method of the present invention as described above, by measuring the coma aberration quantitatively in the diffraction limit system to map the wavefront aberration on the exit of the lens to quantify the factor of the coma aberration that can affect the degree of overlap of the pattern By increasing the manufacturing yield of semiconductor devices, and manufacturing the lens of the stepper or scanner and then attaching it to the equipment, until now it was impossible to quantify the lens coma aberration of these equipment, but the present invention often measures the coma aberration of the lens can do.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0822951A (en) * | 1994-07-06 | 1996-01-23 | Canon Inc | Method of detecting coma aberration of projection optical system |
| JPH09167731A (en) * | 1995-12-14 | 1997-06-24 | Mitsubishi Electric Corp | Projection aligner, mask pattern for evaluating aberration, method for evaluating aberration, filter for removing aberration and production of semiconductor device |
| JPH09244222A (en) * | 1996-03-08 | 1997-09-19 | Mitsubishi Electric Corp | Reticle for measuring superposition error, method for measuring superposition error by using the reticle and mark for measuring superposition error |
| KR19980013646A (en) * | 1996-08-01 | 1998-05-15 | 김광호 | Semiconductor stepper lens aberration evaluation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0822951A (en) * | 1994-07-06 | 1996-01-23 | Canon Inc | Method of detecting coma aberration of projection optical system |
| JPH09167731A (en) * | 1995-12-14 | 1997-06-24 | Mitsubishi Electric Corp | Projection aligner, mask pattern for evaluating aberration, method for evaluating aberration, filter for removing aberration and production of semiconductor device |
| JPH09244222A (en) * | 1996-03-08 | 1997-09-19 | Mitsubishi Electric Corp | Reticle for measuring superposition error, method for measuring superposition error by using the reticle and mark for measuring superposition error |
| KR19980013646A (en) * | 1996-08-01 | 1998-05-15 | 김광호 | Semiconductor stepper lens aberration evaluation method |
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