KR100306409B1 - 반도체장치및그의제조방법 - Google Patents
반도체장치및그의제조방법 Download PDFInfo
- Publication number
- KR100306409B1 KR100306409B1 KR1019980003534A KR19980003534A KR100306409B1 KR 100306409 B1 KR100306409 B1 KR 100306409B1 KR 1019980003534 A KR1019980003534 A KR 1019980003534A KR 19980003534 A KR19980003534 A KR 19980003534A KR 100306409 B1 KR100306409 B1 KR 100306409B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- trench
- active region
- connection
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 128
- 238000009792 diffusion process Methods 0.000 claims abstract description 63
- 238000000926 separation method Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 3
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 53
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP97-40101 | 1997-02-07 | ||
JP04010197A JP3161354B2 (ja) | 1997-02-07 | 1997-02-07 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19980071153A KR19980071153A (ko) | 1998-10-26 |
KR100306409B1 true KR100306409B1 (ko) | 2001-11-30 |
Family
ID=12571483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980003534A Expired - Fee Related KR100306409B1 (ko) | 1997-02-07 | 1998-02-06 | 반도체장치및그의제조방법 |
Country Status (7)
Country | Link |
---|---|
US (2) | US6225657B1 (ko) |
EP (1) | EP0858109B1 (ko) |
JP (1) | JP3161354B2 (ko) |
KR (1) | KR100306409B1 (ko) |
CN (1) | CN1152433C (ko) |
DE (1) | DE69835780T2 (ko) |
TW (1) | TW442922B (ko) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6211544B1 (en) * | 1999-03-18 | 2001-04-03 | Infineon Technologies North America Corp. | Memory cell layout for reduced interaction between storage nodes and transistors |
US6713378B2 (en) * | 2000-06-16 | 2004-03-30 | Micron Technology, Inc. | Interconnect line selectively isolated from an underlying contact plug |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
EP1355316B1 (en) | 2002-04-18 | 2007-02-21 | Innovative Silicon SA | Data storage device and refreshing method for use with such device |
EP1357603A3 (en) | 2002-04-18 | 2004-01-14 | Innovative Silicon SA | Semiconductor device |
US7085153B2 (en) | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
US6912150B2 (en) | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
US20040228168A1 (en) | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US7335934B2 (en) | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
US7184298B2 (en) | 2003-09-24 | 2007-02-27 | Innovative Silicon S.A. | Low power programming technique for a floating body memory transistor, memory cell, and memory array |
JP4044525B2 (ja) | 2004-01-07 | 2008-02-06 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
DE102004003084B3 (de) * | 2004-01-21 | 2005-10-06 | Infineon Technologies Ag | Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren |
US7476939B2 (en) | 2004-11-04 | 2009-01-13 | Innovative Silicon Isi Sa | Memory cell having an electrically floating body transistor and programming technique therefor |
US7251164B2 (en) | 2004-11-10 | 2007-07-31 | Innovative Silicon S.A. | Circuitry for and method of improving statistical distribution of integrated circuits |
US7301838B2 (en) | 2004-12-13 | 2007-11-27 | Innovative Silicon S.A. | Sense amplifier circuitry and architecture to write data into and/or read from memory cells |
US7301803B2 (en) | 2004-12-22 | 2007-11-27 | Innovative Silicon S.A. | Bipolar reading technique for a memory cell having an electrically floating body transistor |
US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
US7355916B2 (en) | 2005-09-19 | 2008-04-08 | Innovative Silicon S.A. | Method and circuitry to generate a reference current for reading a memory cell, and device implementing same |
US7683430B2 (en) | 2005-12-19 | 2010-03-23 | Innovative Silicon Isi Sa | Electrically floating body memory cell and array, and method of operating or controlling same |
US7542345B2 (en) | 2006-02-16 | 2009-06-02 | Innovative Silicon Isi Sa | Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same |
US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
US7638878B2 (en) * | 2006-04-13 | 2009-12-29 | Micron Technology, Inc. | Devices and systems including the bit lines and bit line contacts |
US7606098B2 (en) | 2006-04-18 | 2009-10-20 | Innovative Silicon Isi Sa | Semiconductor memory array architecture with grouped memory cells, and method of controlling same |
WO2007128738A1 (en) | 2006-05-02 | 2007-11-15 | Innovative Silicon Sa | Semiconductor memory cell and array using punch-through to program and read same |
US8069377B2 (en) | 2006-06-26 | 2011-11-29 | Micron Technology, Inc. | Integrated circuit having memory array including ECC and column redundancy and method of operating the same |
US7542340B2 (en) | 2006-07-11 | 2009-06-02 | Innovative Silicon Isi Sa | Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same |
KR100891329B1 (ko) * | 2007-01-26 | 2009-03-31 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR101277402B1 (ko) | 2007-01-26 | 2013-06-20 | 마이크론 테크놀로지, 인코포레이티드 | 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터 |
WO2009031052A2 (en) | 2007-03-29 | 2009-03-12 | Innovative Silicon S.A. | Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor |
US8064274B2 (en) | 2007-05-30 | 2011-11-22 | Micron Technology, Inc. | Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same |
US8085594B2 (en) | 2007-06-01 | 2011-12-27 | Micron Technology, Inc. | Reading technique for memory cell with electrically floating body transistor |
US7816762B2 (en) * | 2007-08-07 | 2010-10-19 | International Business Machines Corporation | On-chip decoupling capacitor structures |
WO2009039169A1 (en) | 2007-09-17 | 2009-03-26 | Innovative Silicon S.A. | Refreshing data of memory cells with electrically floating body transistors |
US8536628B2 (en) | 2007-11-29 | 2013-09-17 | Micron Technology, Inc. | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
US8349662B2 (en) | 2007-12-11 | 2013-01-08 | Micron Technology, Inc. | Integrated circuit having memory cell array, and method of manufacturing same |
US8773933B2 (en) | 2012-03-16 | 2014-07-08 | Micron Technology, Inc. | Techniques for accessing memory cells |
US8014195B2 (en) | 2008-02-06 | 2011-09-06 | Micron Technology, Inc. | Single transistor memory cell |
US8189376B2 (en) | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
US7957206B2 (en) | 2008-04-04 | 2011-06-07 | Micron Technology, Inc. | Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same |
US7947543B2 (en) | 2008-09-25 | 2011-05-24 | Micron Technology, Inc. | Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation |
US7933140B2 (en) | 2008-10-02 | 2011-04-26 | Micron Technology, Inc. | Techniques for reducing a voltage swing |
US7924630B2 (en) | 2008-10-15 | 2011-04-12 | Micron Technology, Inc. | Techniques for simultaneously driving a plurality of source lines |
US8223574B2 (en) | 2008-11-05 | 2012-07-17 | Micron Technology, Inc. | Techniques for block refreshing a semiconductor memory device |
US8213226B2 (en) | 2008-12-05 | 2012-07-03 | Micron Technology, Inc. | Vertical transistor memory cell and array |
US8319294B2 (en) | 2009-02-18 | 2012-11-27 | Micron Technology, Inc. | Techniques for providing a source line plane |
WO2010102106A2 (en) | 2009-03-04 | 2010-09-10 | Innovative Silicon Isi Sa | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
WO2010114890A1 (en) | 2009-03-31 | 2010-10-07 | Innovative Silicon Isi Sa | Techniques for providing a semiconductor memory device |
US8139418B2 (en) | 2009-04-27 | 2012-03-20 | Micron Technology, Inc. | Techniques for controlling a direct injection semiconductor memory device |
US8508994B2 (en) | 2009-04-30 | 2013-08-13 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
US8498157B2 (en) | 2009-05-22 | 2013-07-30 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8537610B2 (en) | 2009-07-10 | 2013-09-17 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9076543B2 (en) | 2009-07-27 | 2015-07-07 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8199595B2 (en) | 2009-09-04 | 2012-06-12 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8174881B2 (en) | 2009-11-24 | 2012-05-08 | Micron Technology, Inc. | Techniques for reducing disturbance in a semiconductor device |
US8310893B2 (en) | 2009-12-16 | 2012-11-13 | Micron Technology, Inc. | Techniques for reducing impact of array disturbs in a semiconductor memory device |
US8416636B2 (en) | 2010-02-12 | 2013-04-09 | Micron Technology, Inc. | Techniques for controlling a semiconductor memory device |
US8576631B2 (en) | 2010-03-04 | 2013-11-05 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8411513B2 (en) | 2010-03-04 | 2013-04-02 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device having hierarchical bit lines |
US8369177B2 (en) | 2010-03-05 | 2013-02-05 | Micron Technology, Inc. | Techniques for reading from and/or writing to a semiconductor memory device |
KR20130007609A (ko) | 2010-03-15 | 2013-01-18 | 마이크론 테크놀로지, 인크. | 반도체 메모리 장치를 제공하기 위한 기술들 |
US8411524B2 (en) | 2010-05-06 | 2013-04-02 | Micron Technology, Inc. | Techniques for refreshing a semiconductor memory device |
US8455875B2 (en) * | 2010-05-10 | 2013-06-04 | International Business Machines Corporation | Embedded DRAM for extremely thin semiconductor-on-insulator |
US8531878B2 (en) | 2011-05-17 | 2013-09-10 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9559216B2 (en) | 2011-06-06 | 2017-01-31 | Micron Technology, Inc. | Semiconductor memory device and method for biasing same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6396951A (ja) * | 1986-10-14 | 1988-04-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH01243460A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体記憶装置の製造方法 |
JPH04256359A (ja) * | 1990-08-16 | 1992-09-11 | Texas Instr Inc <Ti> | 集積回路メモリ装置 |
JPH0817983A (ja) * | 1994-06-29 | 1996-01-19 | Nec Kansai Ltd | 半田めっき装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2815316C2 (de) * | 1978-04-08 | 1980-03-27 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Alkylsilanen |
DE2815978C2 (de) * | 1978-04-13 | 1980-05-22 | Dynamit Nobel Ag, 5210 Troisdorf | Verfahren zur Herstellung von Athylsilanen |
US4340574A (en) * | 1980-08-28 | 1982-07-20 | Union Carbide Corporation | Process for the production of ultrahigh purity silane with recycle from separation columns |
US4292433A (en) * | 1980-10-31 | 1981-09-29 | Chisso Corporation | Method for producing 3-chloropropyltrichlorosilane |
DE3780840T2 (de) * | 1986-03-03 | 1993-03-25 | Fujitsu Ltd | Einen rillenkondensator enthaltender dynamischer speicher mit wahlfreiem zugriff. |
JPH0810755B2 (ja) * | 1986-10-22 | 1996-01-31 | 沖電気工業株式会社 | 半導体メモリの製造方法 |
US4873205A (en) * | 1987-12-21 | 1989-10-10 | International Business Machines Corporation | Method for providing silicide bridge contact between silicon regions separated by a thin dielectric |
JPH01231363A (ja) * | 1988-03-11 | 1989-09-14 | Hitachi Ltd | 半導体記憶装置 |
US5170372A (en) * | 1990-08-16 | 1992-12-08 | Texas Instruments Incorporated | Memory device having bit lines over a field oxide |
DE4119994A1 (de) * | 1991-06-18 | 1992-12-24 | Huels Chemische Werke Ag | Verfahren zur herstellung von 3-chlorpropylsilanen |
JP2994110B2 (ja) * | 1991-09-09 | 1999-12-27 | 株式会社東芝 | 半導体記憶装置 |
DE4130790A1 (de) * | 1991-09-16 | 1993-03-18 | Wacker Chemie Gmbh | Verfahren zur abtrennung von alkenen bei der methylchlorsilan-destillation |
JP2904635B2 (ja) * | 1992-03-30 | 1999-06-14 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5838038A (en) * | 1992-09-22 | 1998-11-17 | Kabushiki Kaisha Toshiba | Dynamic random access memory device with the combined open/folded bit-line pair arrangement |
JP3251777B2 (ja) * | 1994-06-28 | 2002-01-28 | 株式会社東芝 | 半導体記憶装置 |
US5442584A (en) | 1993-09-14 | 1995-08-15 | Goldstar Electron Co., Ltd. | Semiconductor memory device and method for fabricating the same dynamic random access memory device construction |
DE4433021C2 (de) | 1994-09-16 | 1999-04-15 | Forschungszentrum Juelich Gmbh | Vorrichtung zur Brechung von Strömungswirbeln an einer tangential und turbulent umströmten Fläche |
DE4442753C2 (de) * | 1994-12-01 | 2002-04-25 | Degussa | Verfahren zur Herstellung von Alkylhydrogenchlorsilane |
JP3311205B2 (ja) | 1995-07-13 | 2002-08-05 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US5998257A (en) * | 1997-03-13 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming integrated circuitry memory devices, methods of forming capacitor containers, methods of making electrical connection to circuit nodes and related integrated circuitry |
DE19825793C1 (de) * | 1998-06-10 | 2000-01-05 | Degussa | Verfahren zur Herstellung von in 3-Stellung funktionalisierten Organosilanen |
US6500977B1 (en) * | 2001-11-27 | 2002-12-31 | Dow Corning Corporation | Process for producing organosilanes |
-
1997
- 1997-02-07 JP JP04010197A patent/JP3161354B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-03 TW TW087101447A patent/TW442922B/zh not_active IP Right Cessation
- 1998-02-05 EP EP98102007A patent/EP0858109B1/en not_active Expired - Lifetime
- 1998-02-05 DE DE69835780T patent/DE69835780T2/de not_active Expired - Fee Related
- 1998-02-06 KR KR1019980003534A patent/KR100306409B1/ko not_active Expired - Fee Related
- 1998-02-06 CN CNB981001939A patent/CN1152433C/zh not_active Expired - Fee Related
- 1998-02-06 US US09/019,740 patent/US6225657B1/en not_active Expired - Lifetime
-
2001
- 2001-03-28 US US09/818,917 patent/US6509224B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6396951A (ja) * | 1986-10-14 | 1988-04-27 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH01243460A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体記憶装置の製造方法 |
JPH04256359A (ja) * | 1990-08-16 | 1992-09-11 | Texas Instr Inc <Ti> | 集積回路メモリ装置 |
JPH0817983A (ja) * | 1994-06-29 | 1996-01-19 | Nec Kansai Ltd | 半田めっき装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH10223860A (ja) | 1998-08-21 |
CN1152433C (zh) | 2004-06-02 |
TW442922B (en) | 2001-06-23 |
JP3161354B2 (ja) | 2001-04-25 |
US6509224B2 (en) | 2003-01-21 |
US20010013601A1 (en) | 2001-08-16 |
KR19980071153A (ko) | 1998-10-26 |
EP0858109A3 (en) | 2000-02-02 |
EP0858109A2 (en) | 1998-08-12 |
US6225657B1 (en) | 2001-05-01 |
DE69835780T2 (de) | 2006-12-28 |
CN1190263A (zh) | 1998-08-12 |
EP0858109B1 (en) | 2006-09-06 |
DE69835780D1 (de) | 2006-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100306409B1 (ko) | 반도체장치및그의제조방법 | |
US8785998B2 (en) | Semiconductor device having vertical channel transistor and methods of fabricating the same | |
KR100375428B1 (ko) | 반도체기억장치 및 그 제조방법 | |
US8395198B2 (en) | Semiconductor device that uses a transistor for field shield | |
US8486831B2 (en) | Semiconductor device manufacturing method | |
KR100221115B1 (ko) | 반도체 장치의 제조 방법 | |
TWI453868B (zh) | 記憶體陣列、半導體結構與電子系統,以及形成記憶體陣列、半導體結構與電子系統之方法 | |
US20220359525A1 (en) | Memory device and method of forming the same | |
KR970000718B1 (ko) | 반도체 기억장치 및 그 제조방법 | |
KR100322216B1 (ko) | 반도체 기억 장치 및 그 제조 방법 | |
US4921815A (en) | Method of producing a semiconductor memory device having trench capacitors | |
KR0140044B1 (ko) | 메모리 셀중에 절연 구조를 가지는 반도체 메모리 소자 | |
CN115148663A (zh) | 半导体结构及其制备方法 | |
JP2669364B2 (ja) | 半導体記憶装置及びその製造方法 | |
JP2518147B2 (ja) | 半導体メモリ装置とその製造方法 | |
US6599797B1 (en) | SOI DRAM without floating body effect | |
US5329146A (en) | DRAM having trench type capacitor extending through field oxide | |
KR19990005921A (ko) | 반도체 메모리 장치 및 그 제조 방법 | |
US20250048622A1 (en) | Semiconductor memory device | |
US20250220893A1 (en) | Semiconductor memory device | |
JPH0529579A (ja) | 半導体メモリ素子およびその素子分離領域の製造方法 | |
US20250107066A1 (en) | Semiconductor memory device | |
CN113130491B (zh) | 存储装置及其制造方法 | |
JP3177038B2 (ja) | 半導体記憶装置及びその製造方法 | |
KR960014970B1 (ko) | 반도체기억장치 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19980206 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19980206 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20000530 Patent event code: PE09021S01D |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20010517 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20010809 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 20010809 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20040723 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20050722 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20060725 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20070723 Start annual number: 7 End annual number: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20080721 Start annual number: 8 End annual number: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20090724 Start annual number: 9 End annual number: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20100729 Start annual number: 10 End annual number: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20110630 Start annual number: 11 End annual number: 11 |
|
FPAY | Annual fee payment |
Payment date: 20120724 Year of fee payment: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20120724 Start annual number: 12 End annual number: 12 |
|
FPAY | Annual fee payment |
Payment date: 20130719 Year of fee payment: 13 |
|
PR1001 | Payment of annual fee |
Payment date: 20130719 Start annual number: 13 End annual number: 13 |
|
FPAY | Annual fee payment |
Payment date: 20140808 Year of fee payment: 14 |
|
PR1001 | Payment of annual fee |
Payment date: 20140808 Start annual number: 14 End annual number: 14 |
|
FPAY | Annual fee payment |
Payment date: 20150724 Year of fee payment: 15 |
|
PR1001 | Payment of annual fee |
Payment date: 20150724 Start annual number: 15 End annual number: 15 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20170705 |