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KR100298880B1 - Optical coupling element and its manufacturing method - Google Patents

Optical coupling element and its manufacturing method Download PDF

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KR100298880B1
KR100298880B1 KR1019970016922A KR19970016922A KR100298880B1 KR 100298880 B1 KR100298880 B1 KR 100298880B1 KR 1019970016922 A KR1019970016922 A KR 1019970016922A KR 19970016922 A KR19970016922 A KR 19970016922A KR 100298880 B1 KR100298880 B1 KR 100298880B1
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light
optical coupling
reflective
light emitting
resin
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KR19980082184A (en
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정용민
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송기선
한국 고덴시 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION

광결합소자Optical coupling element

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

종래 광투과성 절연체를 이용한 투과형과 반사형 광결합소자의 절연특성의 저하문제와 반투과성 에폭시 수지를 이용한 이중구조의 투과형 광결합소자의 제조가 복잡하다는 문제점 및 작은 패키지에는 적용이 불가능하다는 문제를 해결하고자 한것임.To solve the problem of deterioration of the insulating properties of the transmissive and reflective optical coupling elements using the optically transparent insulator, the complicated manufacturing of the transmissive optical coupling element of the dual structure using the semi-transmissive epoxy resin, and the problem that it is not applicable to a small package. It is.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

전도성이 우수한 리드프레임(41)(42)의 동일 평면상에 발광소자(43)와 수광소자(44)를 각각 고전도성 접착제로 접착시키는 제1공정과; 상기 제1공정후 금속세금선(45)(46)으로 상기 발광소자(43) 및 수광소자(44)의 전극과 지정된 리드 프레임부를 용융접착시키는 제2공정과; 상기 발광소자(43) 및 수광소자(44)를 포함하는 주변부의 상면만을 광투과성 실리콘 수지(47)로 도포하여 보트(BOAT)형의 광 전달 통로를 형성하는 제3공정과; 상기 광투과성 실리콘 수지(47)의 외벽 상, 하면을 고접착 반사성 절연체(48)(49)로 도포한 후 그 위와 리드프레임(41)(42)의 일부를 흑색 에폭시 수지(50)로 트랜스퍼 몰딩하는 제4공정으로 이루어짐을 특징으로 한 것이다.A first step of adhering the light emitting element 43 and the light receiving element 44 on the same plane of the lead frames 41 and 42 having excellent conductivity, respectively, with a highly conductive adhesive; A second step of melting and bonding the electrodes of the light emitting element 43 and the light receiving element 44 and the designated lead frame part to the metal tax wires 45 and 46 after the first step; A third step of forming a BOAT-type light transmission passage by applying only the upper surface of the peripheral portion including the light emitting element 43 and the light receiving element 44 to the light transmissive silicone resin 47; The upper and lower surfaces of the light-transmitting silicone resin 47 are coated with high-adhesive reflective insulators 48 and 49, and then the parts of the lead frames 41 and 42 are transferred with black epoxy resin 50. It is characterized by consisting of a fourth step.

4. 발명의 중요한 용도4. Important uses of the invention

광-전 변환을 위한 광결합소자에 적용되는 것임.Applied to optical coupling element for photoelectric conversion.

Description

광결합소자 및 그 제조방법Optical coupling element and its manufacturing method

일반적으로, 광결합소자는 입력전류로 빛을 발산하는 발광소자와 그 발광소자에서 발산되는 빛을 전류로 변환하는 수광소자를 하나의 패키지안에 구비한 장치로서, 입출력간에는 전기적으로 완전히 절연되어있어 출력신호가 입력신호에 영향을 미치지 않는 단방향성 소자이며, 발광소자로서 전류의 변환 효율(광-전변환효율)이 좋은 적외발광 다이오드와 가시발광 다이오드가 사용되며, 수광소자로서 출력 특성이 양호한 포토 트랜지스터와 포토 트라이악, 포토 로직 등이 사용되고 있다.In general, an optical coupling device includes a light emitting device that emits light as an input current and a light receiving device that converts light emitted from the light emitting device into a current in one package. The signal is a unidirectional device which does not affect the input signal, and an infrared light emitting diode and a visible light emitting diode having good current conversion efficiency (photoelectric conversion efficiency) are used as light emitting devices, and phototransistors having good output characteristics as light receiving devices. Photo triacs, photo logic, etc. are used.

그 응용은 회로에 있어서 전위차가 다른 두회로간의 교호작용과 고속 광대역신호 전달 등에 널리 사용되고 있다.The application is widely used for the interaction between two circuits having different potential differences in circuits and for transmitting high speed broadband signals.

첨부한 도면 도1은 상기와 같은 기능을 갖는 종래 광투과성 절연체를 이용한 투과형 광결합소자의 구조를 나타낸 것이다.1 shows the structure of a transmissive optical coupling device using a conventional optically transparent insulator having the same function as described above.

이러한 구조의 투과형 광결합소자는 전도성이 우수한 리드프레임(11)(12)에 발광소자(13)와 수광소자(14)를 각각 고전도성 접착제로 접착한 후, 금속세금선(15)(16)으로 칩의 전극과 지정된 리드 프레임부에 용융 접착시키고, 상호 대향배치를 위해 지정된 기구에 의해 고정한 후 리드 프레임의 지정된 부위를 용접한다.The transmissive photocoupling device having such a structure adheres the light emitting element 13 and the light receiving element 14 to the lead frames 11 and 12 having excellent conductivity, respectively, with a high conductive adhesive, and then the metal tax wires 15 and 16 are attached. Then, the electrode is melt-bonded to the electrode of the chip and the designated lead frame portion, and fixed by the designated mechanism for mutual placement. Then, the designated portion of the lead frame is welded.

그 다음에 광투과성 절연체(17)로 연결하여 광 통로를 형성한 후 흑색 에폭시 수지(20)로 트랜스퍼 몰딩을 하여 광결합소자를 제조하게 된다.Then, the light path is formed by connecting to the light-transmitting insulator 17 and then transferred to the black epoxy resin 20 to manufacture the optical coupling device.

이렇게 제조되는 실리콘 레진을 이용한 투과형 광결합소자는 입력부로 전류가 유입되면 발광소자(13)가 발광을 하게되고, 그 발산되는 빛은 형성된 광 전달 통로를 통해 수광소자(14)로 전달되며, 수광소자(14)는 그 전달되는 빛을 전류로 변환을 하게된다.In the transmission type optical coupling device using the silicon resin manufactured as described above, the light emitting device 13 emits light when a current flows into the input unit, and the emitted light is transmitted to the light receiving device 14 through the formed light transmission path. The element 14 converts the transmitted light into a current.

그러나 이러한 종래 실리콘 레진을 이용한 투과형 광결합소자는, 발광소자(13)와 수광소자(14)가 상호 대향되게 배치되어 있으므로 거리에 제한을 받는 단점이 있었다. 즉, 상호 거리를 가깝게하면 광 전달효율은 좋아지지만 광투과성 절연체(17)와 에폭시 수지(20)와의 접착력이 결여되어 있고, 발광소자(13)와 수광소자(14)의 짧은 절연거리로 인하여 그의 계면(17,20)으로 전기적 누설이 쉽게 발생되어 절연저하의 문제점이 있으며, 이와는 달리 그의 절연 거리를 확보하기 위해 거리를 증가시키면 넓은 거리로 인하여 광전달 효율이 저하되며, 계면(17)(20)의 접착력 결여로 인하여 절연 향상이 없다는 문제점이 발생된다. 따라서 이러한 구조의 투과형 광결합소자는 큰 절연 내압용으로는 적용이 불가능하며, 그 절연체 내부의 금속세금선(15)(16) 또한 낮게 해야 한다는 등의 문제점이 있다.However, since the light emitting device 13 and the light receiving device 14 are disposed to face each other, the transmission type optical coupling device using the conventional silicon resin has a disadvantage of being limited in distance. That is, when the mutual distance is closer, the light transmission efficiency is improved, but the adhesive force between the light-transmitting insulator 17 and the epoxy resin 20 is lacking, and due to the short insulating distance between the light emitting element 13 and the light receiving element 14, Electrical leakage is easily generated at the interfaces 17 and 20, and thus there is a problem of lowering the insulation.In contrast, if the distance is increased to secure the insulation distance, the light transmission efficiency decreases due to the wide distance, and the interfaces 17 and 20 are used. There is a problem that there is no insulation improvement due to the lack of adhesion. Therefore, the transmissive optical coupling device having such a structure is not applicable to a large insulation breakdown voltage, and there is a problem in that the metal tax wires 15 and 16 inside the insulator must also be lowered.

그리고 각각의 리드프레임(11)(12)에 대하여 기계적으로 용접을 해야한다는 복잡성이 있으며, 리드프레임(11)(12) 자체의 편차로 인하여 최적의 칩 마운트를 해도 대향배치가 틀어지게 되어 광전달효율을 저하시키는 문제점이 있었다.In addition, there is a complexity that the welding of each lead frame (11, 12) must be mechanically performed, and due to the deviation of the lead frame (11) (12) itself, the opposing arrangement is distorted even if the chip is optimally mounted. There was a problem of lowering the efficiency.

또한, 발광소자(13)가 발광할 경우(체면발광), 광투과성 절연체(17) 외부가 흑색 에폭시 수지(20)로 되어 있어 광의 일부가 수광소자(14)에 도달하기 전에 흡수되어 광출력 효율을 저하시키는 등의 문제점도 있었다.In addition, when the light emitting element 13 emits light (body surface light emission), the outside of the light transmissive insulator 17 is made of a black epoxy resin 20 so that a part of the light is absorbed before reaching the light receiving element 14 and thus the light output efficiency is increased. There was also a problem such as lowering.

상기와 같은 저절연성의 문제점을 개선하기 위해서 종래에는 첨부한 도면 도2와 같은 반투과성 에폭시 수지를 이용한 이중구조의 투과형 광결합소자를 개발하였다.In order to improve the problem of low insulation as described above, in the related art, a transmissive optical coupling device having a dual structure using a semi-transparent epoxy resin as shown in FIG. 2 is developed.

이는 전도성이 우수한 리드프레임(21)(22)에 발광소자(23)와 수광소자(24)를 각각 고전도성 접착제로 접착한 후, 금속세금선(25)(26)으로 칩의 전극과 지정된 리드 프레임부에 용융 접착시키고, 발광소자(23)의 열적 노화를 방지하기 위해 광투과성 실리콘 수지로 보호막(27)을 형성한다. 그 다음으로 상호 대향 배치를 위해 지정된 기구에 의해 고정한 후 리드프레임(21)(22)의 지정된 부위를 용접하고, 반투명성 에폭시 수지(28)로 1차 몰딩하여 광 통로를 형성한 후, 흑색 에폭시 수지(30)로 다시 몰딩을 하여 광결합소자를 제조하게 된다.This is because the light emitting element 23 and the light receiving element 24 are adhered to the lead frames 21 and 22 having excellent conductivity, respectively, with a high conductive adhesive, and then the electrodes of the chip and the designated leads are attached to the metal tax wires 25 and 26. In order to melt-bond the frame part and prevent thermal aging of the light emitting device 23, a protective film 27 is formed of a light transmissive silicone resin. Next, after fixing by a designated mechanism for mutually opposing arrangements, the designated portions of the lead frames 21 and 22 are welded, first molded with a semi-transparent epoxy resin 28 to form a light path, and then a black epoxy The resin 30 is molded again to manufacture an optical coupling device.

이렇게 제조되는 반투과성 에폭시 수지를 이용한 이중구조의 투과형 광결합소자는, 도1와 같은 광투과성 실리콘 레진을 이용한 투과형 광결합소자에서 발생하는 낮은 절연 문제는 개선하였으나, 반면 광의 통로인 에폭시 수지의 반투명성으로 인하여 광-전류 전달비의 저하에 따른 거리를 단축해야 하며, 내부 절연성 확보를 위해 금속세금선(25)(26)의 높이를 제한해야하는 특별한 공정관리가 추가되어야 하므로 제조 공정이 복잡하다는 문제점을 야기시켰다.The double-transmissive optical coupling device using the semi-transmissive epoxy resin thus prepared improved the low insulation problem that occurs in the transmissive optical coupling device using the light-transmissive silicon resin as shown in FIG. 1, while the translucency of the epoxy resin as the light path was improved. Due to this, the distance due to the decrease in the light-to-current transmission ratio must be shortened, and special process control for limiting the height of the metal tax wires 25 and 26 must be added to secure internal insulation. Caused.

또한, 반투명성 에폭시 수지(28)의 고상(固狀)으로 인하여 발광소자(23)의 동작시 칩(CHIP)의 축팽창을 원할하게 하기 위해 실리콘 투명수지(27; 광투과성 절연체)를 도포하는데, 이때 광투과성 절연체의 투입양이 불안정하거나 미투입시에는 칩의 노화가 급속하게 이루어져 실장에 막대한 지장을 초래하는 문제점을 발생하였다.In addition, due to the solid phase of the semi-transparent epoxy resin 28, the silicone transparent resin 27 (light transmissive insulator) is applied to smooth the axial expansion of the chip (CHIP) during the operation of the light emitting element (23). In this case, when the input amount of the light-transmitting insulator is unstable or not input, aging of the chip rapidly occurs, which causes a problem in the mounting.

그리고, 실리콘 투명수지(27)와 반투명 에폭시 수지(28)간의 계면 발생으로 인하여 광의 굴절 현상이 일어나 전류 전달이 저하되는 문제점도 발생하였다.In addition, due to the occurrence of the interface between the silicone transparent resin 27 and the semi-transparent epoxy resin 28, there is also a problem that the light transfer phenomenon occurs to reduce the current transfer.

종래 광결합소자의 또 다른 구조로서, 첨부한 도면 도3은 광투과성 절연체를 이용한 반사형 광결합소자의 구조를 나타낸 것이다.As another structure of the conventional optical coupling device, the accompanying drawings Figure 3 shows the structure of the reflective optical coupling device using a light-transmitting insulator.

상기와 같은 광투과성 절연체를 이용한 반사형 광결합소자는, 전도성이 우수한 리드프레임(31)(32)의 동일 평면상에 발광소자(33)와 수광소자(34)를 각각 고전도성 접착제로 접착한 후 금속세금선(35)(36)으로 칩의 전극과 지정된 리드프레임부에 용융 접착시키고, 광투과성의 실리콘 수지(37)로 광의 전달 통로를 형성하며, 외벽에 반사성 절연체(38)(39)를 도포한 후 흑색 에폭시 수지(40)로 트랜스퍼 몰딩을 하여 제조한다. 또 다른 제조방법으로는 실리콘 수지(37)로 광의 전달 통로를 형성하는 공정까지는 동일하며, 그후에 반사성 절연체(38)(39)를 사용하지 않고 백색필러(FILLER)를 함유한 에폭시 수지(40)만으로 몰딩을 하여 제조를 하게된다.In the reflective optical coupling device using the light-transmitting insulator as described above, the light-emitting device 33 and the light-receiving device 34 are bonded to each other on the same plane of the lead frames 31 and 32 having excellent conductivity, respectively, by using a highly conductive adhesive. The metal tax wires 35 and 36 are then melt-bonded to the electrodes of the chip and the designated lead frame portions, and light transmission paths are formed by the light-transmissive silicone resin 37, and the reflective insulators 38 and 39 are formed on the outer wall. After the coating is produced by transfer molding with a black epoxy resin (40). In another manufacturing method, the process of forming the light transmission path with the silicone resin 37 is the same, and then only the epoxy resin 40 containing the white filler without using the reflective insulators 38 and 39 is used. It is made by molding.

그러나 이러한 공정에 의해 제조되는 광투과성 절연체를 이용한 반사형 광결합소자도 발광소자(33)와 수광소자(34)와의 간격 제한으로 투과성 실리콘 수지(37)의 도포에 한계가 있어 절연 내압을 증가시킬 수 없다는 문제점을 발생하였다.However, the reflective optical coupling device using the light-transmitting insulator manufactured by this process also has a limitation in the application of the transparent silicone resin 37 due to the limitation of the distance between the light emitting device 33 and the light receiving device 34, thereby increasing the insulation breakdown voltage. There was a problem that can not be.

아울러 반사성 절연체(38)(39)로 반사막을 도포한 후 경화시키면 접착력이 떨어져 에폭시 몰딩(40)후 계면이 발생하며, 고절연 내압을 극복할 수 없다는 문제점도 있었다.In addition, when the reflective film is coated with the reflective insulators 38 and 39 and then cured, the adhesive force decreases, thereby causing an interface after the epoxy molding 40, and there is a problem that high insulation breakdown voltage cannot be overcome.

그리고 광투과성 실리콘 수지(37)로 광 통로를 형성할 때 그 형상이 원형이나 타원형인데, 그 형상이 하면까지 이루고 있어 발광소자(33)의 발광후 하면으로 반사된 빛은 수광소자(34)측으로 도달할 수 없으므로 광 출력특성이 저하되는 문제점도 발생하였다.When the light path is formed of the light transmissive silicone resin 37, the shape of the light path is circular or elliptical. The shape is formed to the lower surface, and the light reflected from the lower surface of the light emitting element 33 to the light receiving element 34 toward the light receiving element 34 side. There was also a problem that the light output characteristic is lowered because it cannot be reached.

이에 본 발명은 상기와 같은 종래 광결합소자들의 제반 문제점을 해결하기 위해서 제안된 것으로, 본 발명의 목적은 종래 투과형과 반사형 광결합소자의 낮은 절연 특성과 광 전류 전달비를 개선하고 제조의 복잡화를 해결하여 작은 패키지(PACKAGE ; 4PIN류, ARRAY포함)에도 적용이 가능토록함과 동시에 제조가 간단하고 사용이 용이하며 높은 신뢰성을 보장해주는 광결합소자를 제공하는데 있다.Therefore, the present invention has been proposed to solve all the problems of the conventional optical coupling devices as described above, and an object of the present invention is to improve the low insulation characteristics and the light current transfer ratio of the conventional transmission and reflection optical coupling devices and to increase the complexity of manufacturing In order to solve the problem, it is possible to be applied to small packages (including 4 pins and arrays) and to provide an optical coupling device that is simple to manufacture, easy to use, and high reliability.

이러한 본 발명의 목적을 달성하기 위한 방법은, 전도성이 우수한 리드프레임의 동일 평면상에 발광소자와 수광소자를 각각 고전도성 접착제로 접착시키는 제1공정과; 상기 제1공정후 금속세금선으로 상기 발광소자 및 수광소자의 전극과 지정된 리드프레임부를 용융접착시키는 제2공정과; 상기 발광소자 및 수광소자를 포함하는 주변부의 상면만을 광투과성 실리콘 수지로 도포하여 보트(BOAT)형의 광 전달 통로를 형성하는 제3공정과; 상기 광투과성 실리콘 수지의 외벽 상, 하면을 고접착 반사성 절연체로 도포한 후 그 위와 상기 리드프레임의 일부를 흑색 에폭시 수지로 트랜스퍼 몰딩하는 제4공정으로 이루어진다.The method for achieving the object of the present invention, the first step of bonding the light emitting element and the light receiving element on the same plane of the lead frame excellent in conductivity, respectively, with a highly conductive adhesive; A second step of melting and bonding the electrodes of the light emitting element and the light receiving element and the designated lead frame part with the metal tax wire after the first step; A third step of forming a boat-type light transmission path by applying only a top surface of the peripheral part including the light emitting device and the light receiving device with a light transmissive silicone resin; A fourth step is performed by coating the upper and lower surfaces of the transparent silicone resin with a highly adhesive reflective insulator, and then transferring the upper and a part of the lead frame with a black epoxy resin.

이하, 본 발명의 바람직한 실시예를 첨부한 도면에 의거 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

제1도는 종래 광투과성 절연체를 이용한 투과형 광결합소자의 구조도.1 is a structural diagram of a transmissive optical coupling device using a conventional light-transmitting insulator.

제2도는 종래 반투과성 에폭시 수지를 이용한 이중구조의 투과형 결합소자의 구조도.2 is a structural diagram of a transmissive coupling element having a dual structure using a conventional semi-permeable epoxy resin.

제3도는 종래 광투과성 절연체를 이용한 반사형 광결합소자의 구조도.3 is a structural diagram of a reflective optical coupling device using a conventional light-transmitting insulator.

제4a도 및 제4b도는 본 발명에 의한 보트형과 고접착 반사성 절연체를 이용한 반사형 광결합소자의 제1구조도(DIP형).4A and 4B are first structural diagrams of a reflective optical coupling element using a boat type and a high adhesion reflective insulator according to the present invention (DIP type).

제5a도 및 제5b도는 본 발명에 의한 보트형과 고접착 반사성 절연체를 이용한 반사형 광결합소자의 제2구조도(MFP형-GULL WING형).5a and 5b are second structural diagrams of a reflective optical coupling element using a boat type and a highly adhesive reflective insulator according to the present invention (MFP type-GULL WING type).

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

41, 42, 51, 52 : 리드프레임 43, 53 : 발광소자41, 42, 51, 52: lead frame 43, 53: light emitting element

44, 54 : 수광소자 45, 46, 55, 56 : 금속세금선44, 54: light receiving element 45, 46, 55, 56: metal tax wire

47, 57 : 실리콘 수지 48, 49, 58, 59 : 고접착 반사성 절연체47, 57: silicone resin 48, 49, 58, 59: high adhesion reflective insulator

50, 60 : 흑색 에폭시 수지50, 60: black epoxy resin

61∼64, 61'∼64' : 'V'홈 또는 '∧'형 돌기61 ~ 64, 61 '~ 64': 'V' groove or '∧' type projection

도4의 (a) 및 (b)도는 본 발명에 의한 보트(BOAT)형과 고접착 반사성 절연체를 이용한 반사형 광결합소자의 구조도(DIP형)이고, 도5의 (a) 및 (b)도는 본 발명에 의한 보트형과 고접착 반사성 절연체를 이용한 반사형 광결합소자의 다른 구조도(MFR소형-GULL-WING형)이다.4A and 4B are structural diagrams of a reflective optical coupling device using a BOAT type and a highly adhesive reflective insulator according to the present invention (DIP type), and FIGS. ) Is another structural diagram (MFR-GULL-WING type) of the reflection type optical coupling element using the boat type and the high adhesion reflective insulator according to the present invention.

여기서 딥(DIP)형 반사형 광결합소자의 제조 공정과 GULL-WING형의 MFP소형 제조공정은 동일하므로, 중복기재를 피하기 위해 작용을 함께 설명한다.Here, since the manufacturing process of the dip (DIP) reflective optical coupling device and the manufacturing process of the MFP small-sized GULL-WING type are the same, the operation will be described together to avoid overlapping materials.

먼저, 전도성이 우수하고 "V홈"(61∼64)또는 "∧"형상의 돌기(61'∼64')가 형성된 리드프레임(41)(42),(51)(52)의 동일 평면상에 발광소자(43)(53)와 수광소자(44)(54)를 각각 고전도성 접착제로 접착한 후, 금속세금선(45)(46)(55)(56)으로 그 발광소자(43)(53) 및 수광소자(44)(54)의 전극과 지정된 리드 프레임부를 용융하여 접착시키게 된다.First, the coplanar shape of the lead frames 41, 42, 51 and 52 in which the conductivity is excellent and the projections 61 'to 64' having the "V groove" 61 to 64 or the "V" shape are formed. After the light emitting elements 43, 53 and the light receiving elements 44, 54 are respectively adhered to each other with a highly conductive adhesive, metal light wires 45, 46, 55 and 56 are used as the light emitting elements 43. The electrode of the 53 and the light receiving elements 44 and 54 and the designated lead frame portion are melted and bonded.

이후, 광투과성이 좋은 절연성 수지인 광투과성 실리콘 수지(47)(57)를 열적으로 처리하여 상기 발광소자(43)(53) 및 수광소자(44)(54)를 포함하는 주변부의 상면만을 보트(BOAT)형의 광 전달 통로로 형성하게 된다.Thereafter, the light-transmitting silicone resins 47 and 57, which are insulating resins having good light-transmittance, are thermally treated so that only the upper surface of the peripheral part including the light emitting elements 43, 53 and light receiving elements 44, 54 is boated. It is formed by a (BOAT) type light transmission passage.

상기에서, 광투과성 실리콘 수지(47)(57)로 보트(BOAT)형의 광 전달 통로를 형성함에 있어, 최소 안전 측면거리(최단거리) 3mm이상의 계면 절연 거리를 확보토록 하고, 동시에 하면의 돔(DOME) 형성을 방지하며, 광 전달 출력 특성을 개선하기 위해 열적으로 광투과성수지의 흐름과 형상을 제어함이 바람직하다.In the above, in forming a BOAT-type light transmission passage with the transparent silicone resins 47 and 57, the interfacial insulation distance of 3 mm or more at the minimum safety side distance (shortest distance) is ensured, and at the same time, the dome of the lower surface It is desirable to control the flow and shape of the optically transmissive resin in order to prevent (DOME) formation and to improve light transmission output characteristics.

다음으로, 차기 공정으로 형성되는 반사막과 에폭시 수지와의 계면 밀착력향상과 광반사력을 증가시키기 위해 반사성 절연체가 완전히 경화한 후에도 끈적끈적한 고접착력과 광 반사력을 갖는 반사성 필러를 함유한 경화성 수지인 고접착 반사성 절연체(48)(49)(58)(59)를 상기 광투과성 실리콘 수지(47)(57)의 외벽 상, 하면에 소정 두께로 도포하여 반사막을 형성시키게 된다.Next, in order to improve the interfacial adhesion between the reflective film formed by the next step and the epoxy resin and to increase the light reflection power, the curable resin containing the reflective filler having high stickiness and light reflectivity even after the reflective insulator is completely cured. The highly adhesive reflective insulators 48, 49, 58 and 59 are applied to the outer wall and the lower surface of the light transmissive silicone resins 47 and 57 with a predetermined thickness to form a reflective film.

그리고 그 반사막위와 리드프레임(41)(42)(51)(52)의 일부를 흑색 에폭시 수지(50)(60)로 트랜스퍼 몰딩하여 광결합소자를 제조하게 되는 것이다.Then, a part of the lead film 41, 42, 51 and 52 on the reflective film is transferred to the black epoxy resin 50 and 60 to manufacture an optical coupling device.

이러한 방법으로 광결합소자를 제조하게 되면 P-DIP형과 MFP, 즉 MINI-FLAT형 패키지의 고내압용 모든 제품(4/8/16PIN ARRAY 등등)에 적용이 가능하며, 아울러 전류 입력부에 직류형(DC)과 교류형(AC)의 장치를 모두 사용할 수 있게 된다.If the optical coupling device is manufactured in this way, it can be applied to all high voltage products (4/8/16 pin array, etc.) of P-DIP type and MFP, that is, MINI-FLAT type package, Both DC and AC devices can be used.

이상에서 상술한 바와 같이 본 발명을 빠른시간내에(1분이내) 1차 실리콘 수지(47)(57)의 경화가 이루어지므로 제조의 자동화가 가능하고, 1차 경화된 광투과성 실리콘 수지(47)(57)에 반사성 수지를 주입할 때 수지의 유동성이 좋아 상면 첨두부에만 주입하면 1분 후에는 잔체적으로 상면부에 도포되고, 리드프레임(41)(42)(51)(52)의 "∧홈"(61∼64) 또는 "∨"형상의 돌기(61'∼64') 전까지 억제되어 제조력과 신뢰도 향상을 도모하는 효과가 있다.As described above, the present invention can be automated within a short time (within 1 minute) to cure the primary silicone resins 47 and 57, thereby enabling automation of manufacturing, and the primary cured light-transmissive silicone resin 47 ( 57) When the reflective resin is injected into the resin, the fluidity of the resin is good, and if only the top surface is injected, the resin is applied to the upper surface after one minute, and the "∧" of the lead frames 41, 42, 51 and 52 is applied. It is suppressed until the groove | channel "61-64 or the" ∨ "shape protrusions 61'-64 ', and there exists an effect which aims at improving manufacturing power and reliability.

또한 본 발명에 의한 보트형의 반사막이 리드프레임(41),(42),(51),(52)을 충분히 감싸고 있어, 내외부 절연성을 향상시킬 수 있는 효과도 있다.In addition, since the boat-shaped reflective film according to the present invention sufficiently covers the lead frames 41, 42, 51, and 52, there is an effect of improving the internal and external insulation.

본 발명은 종래 투과형 광결합소자의 낮은 절연 특성을 개선하고 제조의 복잡화를 해결하여 작은 패키지(PACKAGE ; 4PIN류, ARRAY포함)에도 적용이 가능토록함과 동시에 제조가 간단하고 사용이 용이하며 높은 신뢰성을 보장해주는 광결합소자를 제공하고자 한 것이다.The present invention can be applied to a small package (package; 4pins, including ARRAY) by improving the low insulation characteristics of the conventional transmissive optical coupling device and solving the manufacturing complexity, and at the same time, the manufacturing is simple, easy to use and high reliability. It is to provide an optical coupling device that ensures the.

Claims (7)

리드프레임(41)(42)의 동일 평면상에 발광소자(43)와 수광소자(44)를 각각 고전도성 접착제로 접착시키는 제1공정과; 상기 제1공정후 금속세금선(45)(46)으로 상기 발광소자(43) 및 수광소자(44)의 전극과 지정된 리드프레임부를 용융접착시키는 제2공정과; 상기 발광소자(43) 및 수광소자(44)를 포함하는 주변부의 상면만을 광투과성 실리콘 수지(47)로 도포하여 보트(BOAT)형의 광 전달 통로를 형성하는 제3공정과; 상기 광투과성 실리콘 수지(47)의 외벽 상, 하면을 고접착 반사성 절연체(48)(49)로 도포한 후 그 위와 리드프레임(41)(42)의 일부를 흑색 에폭시 수지(50)로 트랜스퍼 몰딩하는 제4공정으로 이루어짐을 특징으로 하는 광결합소자의 제조방법.A first step of adhering the light emitting element 43 and the light receiving element 44 on the same plane of the lead frames 41 and 42, respectively, with a highly conductive adhesive; A second step of melting and bonding the electrodes of the light emitting element 43 and the light receiving element 44 and the designated lead frame part to the metal tax wires 45 and 46 after the first step; A third step of forming a BOAT-type light transmission passage by applying only the upper surface of the peripheral portion including the light emitting element 43 and the light receiving element 44 to the light transmissive silicone resin 47; The upper and lower surfaces of the light-transmitting silicone resin 47 are coated with high-adhesive reflective insulators 48 and 49, and then the parts of the lead frames 41 and 42 are transferred with black epoxy resin 50. Method for manufacturing an optical coupling device characterized in that the fourth step to the. 청구항1에 있어서, 상기 광 전달 통로 형성시 광 전달 출력 특성을 개선하기 위해 열적으로 광투과성 수지의 흐름과 형상을 제어하여 보트(BOAT)형의 광 전달 통로를 형성하는 것을 특징으로 하는 광결합소자의 제조방법.The optical coupling device according to claim 1, wherein the light transmission path of a boat (BOAT) type is formed by thermally controlling the flow and shape of the light transmissive resin in order to improve the light transmission output characteristics when the light transmission path is formed. Manufacturing method. 청구항1에 있어서, 상기 제4공정의 고접착 반사성 절연체(48)(49)는 반사막과 에폭시 수지와의 계면 밀착력 향상과 광반사력을 증가시키기 위해 반사성 절연체가 완전히 경화한 후에도 끈적끈적한 고접착력과 광 반사력을 갖는 반사성 필러를 함유한 경화성 수지인 것을 특징으로 하는 광결합소자의 제조방법.The method of claim 1, wherein the high adhesion reflective insulator 48, 49 of the fourth step is a sticky high adhesive strength even after the reflective insulator is completely cured to improve the interfacial adhesion between the reflective film and the epoxy resin and increase the light reflection force. A curable resin containing a reflective filler having light reflecting power. 청구항1에 있어서, 상기 리드프레임(41)(42)의 일부에는 투과성 및 반사성 수지의 흐름을 억제하고 패키지와 리드프레임간의 기밀성 강화를 위해 "V홈"(61)(62)을 형성하는 것을 특징으로 하는 광결합소자의 제조방법.The method of claim 1, wherein a part of the lead frame (41) 42 is formed in the "V groove" (61) 62 to suppress the flow of the transparent and reflective resin and to enhance the airtightness between the package and the lead frame. Method for manufacturing an optical coupling element to be. 청구항1 또는 4에 있어서, 상기 리드프레임(41)(42)의 일부에는 투과성 및 반사성 수지의 흐름을 억제하고 패키지와 리드프레임간의 기밀성 강화를 위해 형성된 "V홈"을 돌기로 대체하는 것을 특징으로 하는 광결합소자의 제조방법.The method according to claim 1 or 4, wherein the part of the lead frame 41, 42 is characterized in that to replace the "V-groove" formed in order to suppress the flow of the transparent and reflective resin and to enhance the airtight between the package and the lead frame. Method of manufacturing an optical coupling device. 투과성 및 반사성 수지의 흐름을 억제하기 위한 수단을 갖는 리드프레임(41)(42)의 동일 평면상에 각각 증착되어 광을 발산하고 그 발산된 광을 전기적인 신호로 변환하여 발광소자(43) 및 수광소자(44)와; 상기 발광소자(43) 및 수광소자(44)를 포함하는 주변부의 상면에만 형성되어 상기 발광소자(43)에서 발산된 광을 상기 수광소자(44)로 전달해 주기 위한 보트(BOAT)형의 광 전달 통로(47)와; 상기 광 전달 통로(47)의 외벽 상, 하면에 형성된 절연을 위한 절연막(48)(49)을 포함하여 구성된 것을 특징으로 하는 광결합소자.The light emitting element 43 and the light emitting element 43 are respectively deposited on the same plane of the lead frames 41 and 42 having means for suppressing the flow of the transmissive and reflective resin to emit light and convert the emitted light into an electrical signal. A light receiving element 44; It is formed only on the upper surface of the periphery including the light emitting element 43 and the light receiving element 44 to transmit the light emitted from the light emitting element 43 to the light receiving element 44 (BOAT) type light transmission Passage 47; And an insulating film (48) (49) for insulation formed on the outer wall and the lower surface of the light transmission passage (47). 청구항6에 있어서, 상기 투과성 및 반사성 수지의 흐름 억제 수단으로 리드프레임(41)(42),(51)(52)상에 "V홈"(61∼64)또는 "∧"형상의 돌기(61'∼64')를 형성하여 이루어짐을 특징으로 하는 광결합소자.The projections 61 according to claim 6, wherein the V-shaped grooves 61 to 64 or the V-shaped projections 61 are formed on the lead frames 41, 42, 51 and 52 as means for suppressing the flow of the transparent and reflective resin. Optical coupling element, characterized in that formed '~ 64').
KR1019970016922A 1997-05-01 1997-05-01 Optical coupling element and its manufacturing method Expired - Lifetime KR100298880B1 (en)

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KR20020079516A (en) * 2001-04-09 2002-10-19 가부시끼가이샤 도시바 Light emitting device
KR100491314B1 (en) * 2001-04-09 2005-05-24 가부시끼가이샤 도시바 Light emitting device

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US4833701A (en) * 1988-01-27 1989-05-23 Motorola, Inc. Trunked communication system with nationwide roaming capability
US4901340A (en) * 1988-09-19 1990-02-13 Gte Mobilnet Incorporated System for the extended provision of cellular mobile radiotelephone service
JP6325471B2 (en) 2015-03-02 2018-05-16 株式会社東芝 Optical coupling device and insulation device
CN114551392A (en) * 2022-02-17 2022-05-27 西安微电子技术研究所 A lead frame suitable for coplanar plastic encapsulated optocoupler package

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20020079516A (en) * 2001-04-09 2002-10-19 가부시끼가이샤 도시바 Light emitting device
KR100491314B1 (en) * 2001-04-09 2005-05-24 가부시끼가이샤 도시바 Light emitting device

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