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KR100282330B1 - In plane switching mode liquid crystal display device having electrode structre applying inclined electric field - Google Patents

In plane switching mode liquid crystal display device having electrode structre applying inclined electric field Download PDF

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KR100282330B1
KR100282330B1 KR1019970045836A KR19970045836A KR100282330B1 KR 100282330 B1 KR100282330 B1 KR 100282330B1 KR 1019970045836 A KR1019970045836 A KR 1019970045836A KR 19970045836 A KR19970045836 A KR 19970045836A KR 100282330 B1 KR100282330 B1 KR 100282330B1
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liquid crystal
substrate
crystal display
electrode
display device
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KR19990024619A (en
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신현호
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구본준
엘지.필립스 엘시디주식회사
론 위라하디락사
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Priority to KR1019970045836A priority Critical patent/KR100282330B1/en
Priority to US09/143,624 priority patent/US6549258B1/en
Priority to DE19839789A priority patent/DE19839789B9/en
Priority to JP24699498A priority patent/JP4287514B2/en
Priority to GB9819255A priority patent/GB2329062B/en
Priority to FR9811089A priority patent/FR2767952B1/en
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Abstract

본 발명에 따른 횡경사전계방식 액정표시소자는 제1기판에 종횡으로 배열된 게이트배선 및 데이터배선과, 상기 데이터배선 및 게이트배선의 교차점에 형성된 박막트랜지스터와, 상기 데이터배선과 교대로 평행하게 형성된 복수의 데이터전극과, 상기 박막트랜지스터, 공통전극 및 데이터전극 위에 형성된 보호막과, 제2기판위에 형성된 공통배선과, 상기 공통배선에 연결되고 상기 제1기판의 데이터배선과 평행하게 형성되어 상기 데이터전극과 횡경사전계를 인가하는 복수의 공통전극과, 그리고 상기 제1기판과 제2기판 사이에 형성된 액정층으로 이루어진다.According to an aspect of the present invention, there is provided a liquid crystal display device according to an embodiment of the present invention, including a gate wiring and a data wiring arranged vertically and horizontally on a first substrate, a thin film transistor formed at the intersection of the data wiring and the gate wiring, and alternately formed in parallel with the data wiring. A plurality of data electrodes, a passivation layer formed on the thin film transistor, the common electrode and the data electrode, a common wiring formed on the second substrate, and connected to the common wiring and formed in parallel with the data wiring of the first substrate. And a plurality of common electrodes for applying a lateral gradient electric field, and a liquid crystal layer formed between the first substrate and the second substrate.

Description

횡경사전계방식 액정표시소자{IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING ELECTRODE STRUCTRE APPLYING INCLINED ELECTRIC FIELD}Transverse gradient field type liquid crystal display device {IN PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING ELECTRODE STRUCTRE APPLYING INCLINED ELECTRIC FIELD}

본 발명은 횡경사전계방식 액정표시소자에 관한 것으로, 특히 횡경사전계를 형성하는 한쌍의 전극이 각각 상/하 기판상에 분리 형성된 횡경사전계방식 액정표시소자에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse gradient field type liquid crystal display device, and more particularly to a transverse slope field type liquid crystal display device in which a pair of electrodes forming the transverse slope field is separately formed on upper and lower substrates.

액정표시소자의 시야각특성을 향상시킬 목적으로, 광보상판이 장착된 트위스트네마틱(twisted nematic) 액정표시소자, 멀티도메인(multi-domain) 액정표시소자등과 같은 여러가지 액정표시소자가 제안되어 있지만, 이러한 액정표시소자로는 시야각에 따라 콘트라스트비의 저하와 색상이 변하는 문제를 해결하기 힘든 실정이 다.In order to improve the viewing angle characteristic of the liquid crystal display device, various liquid crystal display devices such as a twisted nematic liquid crystal display device equipped with an optical compensation plate, a multi-domain liquid crystal display device, etc. have been proposed. In such a liquid crystal display device, it is difficult to solve the problem of lowering contrast ratio and color change depending on the viewing angle.

상기한 문제를 해결하고자, 최근에는 다른 방식의 액정표시장치인 횡전계방식(in-plane switching mode)의 액정표시장치가 제안되고 있다.In order to solve the above problem, in recent years, a liquid crystal display device having an in-plane switching mode, which is another liquid crystal display device, has been proposed.

도 1은 종래 횡전계방식 액정표시소자의 단위화소의 평면도로서, 제1기판 위에 배열되어 화소영역을 정의하는 데이터배선(1) 및 게이트배선(2)과, 상기한 게이트배선(2)과 평행하게 화소내에 배열된 공통배선(5)과, 상기한 게이트배선(2)과 데이터배선(1)의 교차점에 배치된 박막트랜지스터와, 상기한 화소내에 데이터배선(1)과 대략 평행하게 배열된 데이터전극(19) 및 공통전극(11)으로 구성된다.1 is a plan view of a unit pixel of a conventional transverse electric field type liquid crystal display device, which is arranged on a first substrate to define a pixel area and a gate line 2 and parallel to the gate line 2 described above. The common wiring 5 arranged in the pixel, the thin film transistor arranged at the intersection of the gate wiring 2 and the data wiring 1, and the data arranged substantially parallel to the data wiring 1 in the pixel. It consists of the electrode 19 and the common electrode 11.

도 2는 도 1의 A-A'선 단면도로서 도면에 나타낸 바와 같이, 박막트랜지스터 는 제1기판(3) 위에 형성되어 상기 게이트배선(2)과 접속되는 게이트전극(10)과, 상기 게이트전극(10) 위에 적층된 SiNx 또는 SiOx와 같은 물질로 이루어진 게이트절연막(13)과, 상기 게이트절연막(13) 위에 형성된 비정질 실리콘층(15)과, 상기 비정질 실리콘층(15) 위에 형성된 불순물 비정질 실리콘층(16)과, 상기한 불순물 비정질 실리콘층(16) 위에 형성되어 에이터배선(1)과 데이터전극(19)에 각각 접속되는 소스전극(17) 및 드레인전극(18)으로 구성된다. 화소내의 공통전극(11)은 제1기판 위에 형성되어 공통배선에 접속되며 에이터전극(19)은 게이트절연막(13) 위에 형성되어 박막트랜지스터의 드레인전극(18)에 접속된다. 박막트랜지스터, 데이터전극(19) 및 게이트절연막(13) 위에는 SiNx 또는 Siox와 같은 물질로 이루어진 보호막(20)이 기판 전체에 걸쳐 적층되어 있으며, 그 위에 제1배향막(미도시)이 도포되고 배향방향이 결정된다.FIG. 2 is a cross-sectional view taken along line AA ′ of FIG. 1, wherein the thin film transistor is formed on the first substrate 3 and is connected to the gate wiring 2 and the gate electrode 10. (10) a gate insulating film 13 made of a material such as SiNx or SiOx laminated on the layer, an amorphous silicon layer 15 formed on the gate insulating film 13, and an impurity amorphous silicon layer formed on the amorphous silicon layer 15 And a source electrode 17 and a drain electrode 18 formed on the impurity amorphous silicon layer 16 and connected to the heater wiring 1 and the data electrode 19, respectively. The common electrode 11 in the pixel is formed on the first substrate and connected to the common wiring, and the heater electrode 19 is formed on the gate insulating film 13 and connected to the drain electrode 18 of the thin film transistor. On the thin film transistor, the data electrode 19 and the gate insulating film 13, a protective film 20 made of a material such as SiNx or Siox is stacked over the entire substrate, and a first alignment film (not shown) is applied thereon and an orientation direction is applied thereon. This is determined.

또한, 상기한 제1기판(3)과 대응하는 제2기판(4) 위에는 빛의 누설을 방지하는 차광층(6), R, G 및 B의 칼라필터소자로 이루어진 칼라필터층(7) 및 오버코트층(8)이 차례로 적층되어 있다.Further, on the first substrate 3 and the second substrate 4 corresponding to the above, the light shielding layer 6 which prevents light leakage, the color filter layer 7 made of color filter elements of R, G and B and the overcoat Layers 8 are stacked in sequence.

그러나, 상기한 종래 횡전계방식 액정표시소자는 데이터전극과 공통전극 사이에 보호막에 의한 부가용량과 게이트절연막에 의한 부가용량이 존재하므로 액정분자의 원활한 구동을 위해서는 이러한 부가용량을 감안한 높은 구동전압을 필요로 한다. 또한, 횡전계를 형성하는 다수의 전극에 의해 개구율이 낮아진다(30∼35%).However, the conventional transverse electric field type liquid crystal display device has an additional capacitance between the data electrode and the common electrode by the protective film and the additional capacitance by the gate insulating film. Therefore, in order to smoothly drive the liquid crystal molecules, a high driving voltage considering the additional capacitance is required. in need. In addition, the aperture ratio is lowered (30 to 35%) by the plurality of electrodes forming the transverse electric field.

계속해서, 적정 휘도를 내기 위해서는 백라이트의 밝기가 3000cd/m2이상이어야 하는데. 이것은 박막트랜지스터의 전극적 특성에 영향을 미쳐 플리커(flicker)나 잔상 등의 원인이 되었다.In order to achieve the proper brightness, the backlight brightness must be 3000cd / m 2 or higher. This influenced the electrode characteristics of the thin film transistor and caused flicker or afterimage.

본 발명은 상기한 종래 기술의 문제점을 해결하기 위한 것으로, 횡경사전계를 인가하는 적어도 한쌍의 전극을 상/하 기판상에 분리 형성하여 액정층의 구동전압을 감소시킨 횡경사전계방식 액정표시소자를 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems of the prior art, and the transverse gradient field type liquid crystal display device in which at least one pair of electrodes applying the transverse gradient field is formed on the upper and lower substrates to reduce the driving voltage of the liquid crystal layer. The purpose is to provide.

본 발명의 다른 목적은, 상기한 한쌍의 전극에서 한쪽의 전극을 투명전극으로 하여 개구율을 향상시키는 것이다.Another object of the present invention is to improve the aperture ratio by using one electrode as a transparent electrode in the pair of electrodes described above.

상기한 목적을 달성하기 위하여, 본 발명에 따른 횡경사전계방식 액정표시소자는 제1기판 위에 형성되어 상기 게이트배선과 접속되는 게이트전극과, 상기 게이트전극 위에 적층된 게이트절연막과, 상기 게이트절연막 위에 형성된 비정질 실리콘층과, 상기 비정질 실리콘층 위에 형성된 불순물 비정질 실리콘층과, 상기한 불순물 비정질 실리콘층 위에 형성되어 데이터배선과 데이터전극에 각각 접속되는 소스전극 및 드레인전극으로 구성된다. 또한, 데이터전극은 게이트절연막 위에 형성되어 박막트랜지스터의 드레인전극에 접속된다. 상기한 박막트랜지스터 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막이 적층되어 있으며, 기판 전체에 걸쳐 제1배향막이 도포되고 배향방향이 결정된다.In order to achieve the above object, the transverse slope field type liquid crystal display device according to the present invention comprises a gate electrode formed on a first substrate and connected to the gate wiring, a gate insulating film stacked on the gate electrode, and on the gate insulating film. The formed amorphous silicon layer, the impurity amorphous silicon layer formed on the amorphous silicon layer, and the source electrode and the drain electrode formed on the impurity amorphous silicon layer and connected to the data wiring and the data electrode, respectively. The data electrode is formed on the gate insulating film and connected to the drain electrode of the thin film transistor. A protective film made of a material such as SiNx or SiOx is stacked on the thin film transistor, and a first alignment layer is coated on the entire substrate, and an orientation direction is determined.

상기한 제1기판과 대응하는 제2기판 위에는 상기 박막트랜지스터, 게이트배선, 데이터배선, 근처로 빛이 새는 것을 방지하는 차광층을 형성하고, 그 위에 순서대로 칼라필터층, 오버코트층을 형성한다. 계속해서, 상기 차광층이 형성된 기판의 영역 및 화소영역에는 상기 데이터전극과 대응하는 복수의 공통전극을 형성하고, 기판 전체에 걸쳐 제2배향막을 형성한 후, 상기한 두 기판 사이에 액정층을 형성한다.On the second substrate corresponding to the first substrate, a light shielding layer is formed on the thin film transistor, the gate wiring, the data wiring, and the light shielding layer to prevent light leakage. The color filter layer and the overcoat layer are sequentially formed thereon. Subsequently, a plurality of common electrodes corresponding to the data electrodes are formed in the region and the pixel region of the substrate on which the light blocking layer is formed, and a second alignment layer is formed over the entire substrate, and then a liquid crystal layer is formed between the two substrates. Form.

본 발명의 다른 형태는, 상기한 구조에서 상기 차광층 위에 형성되는 공통전극을 차광층의 역할도 겸하도록 일체로 형성한 것이다.According to another aspect of the present invention, the common electrode formed on the light shielding layer in the above structure is integrally formed to serve as the light shielding layer.

도 1은, 종래 횡전계방식 액정표시소자의 평면도.1 is a plan view of a conventional transverse electric field type liquid crystal display device.

도 2는, 도 1의 A-A'선 단면도.FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1. FIG.

도 3은, 본 발명에 따른 액정표시소자의 평면도.3 is a plan view of a liquid crystal display device according to the present invention;

도 4는, 본 발명의 일실시예를 나타내는 도면.4 is a diagram showing an embodiment of the present invention.

도 5는, 본 발명의 다른 실시예를 나타내는 도면.5 shows another embodiment of the present invention.

- 도면의 주요 부분에 대한 부호의 설명 --Explanation of symbols for the main parts of the drawing-

103 : 제1기판 104 : 제2기판103: first substrate 104: second substrate

106 : 차광층 107 : 칼라필터층106: light shielding layer 107: color filter layer

108 : 오버코트층 110 : 게이트전극108: overcoat layer 110: gate electrode

113 : 게이트절연막 115 : 비정질 실리콘층113: gate insulating film 115: amorphous silicon layer

116 : 불순물 비정질 실리콘층 117 : 소스전극116 impurity amorphous silicon layer 117 source electrode

118 : 드레인전극 119 : 데이터전극118: drain electrode 119: data electrode

120 : 보호막 122 : 공통전극120: protective film 122: common electrode

이하, 본 발명의 바람직한 실시예를 도면을 참조하여 상세하게 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

도 3은 본 발명에 따른 횡경사전계방식 액정표시소자의 평면도이고, 도 4 내지 도 5는 본 발명의 제1실시예 및 제2실시예를 나타내는 도 3의 B-B'선 단면로서, 본 발명의 액정표시소자는 기판(103) 위에 형성되어 게이트배선과 접속되는 Ta와 같은 불투명금속으로 이루어진 게이트전극(110)과, 상기 게이트전극(110) 위에 적층된 SiNx 또는 SiOx와 같은 물질로 이루어진 게이트절연막(113)과, 상기 게이트절연막(113) 위에 형성된 비정질 실리콘층(115)과, 상기 비정질 실리콘층(115) 위에 형성된 불순물 비정질 실리콘층(116)과, 상기한 불순물 비정질 실리콘층(116) 위에 형성되어 데이터배선과 데이터전극(119)에 각각 접속되는 소스전극(117) 및 드레인 전극(118)으로 구성된다.3 is a plan view of a transverse tilt field type liquid crystal display device according to the present invention, and FIGS. 4 to 5 are cross-sectional views taken along line B-B 'of FIG. 3 showing the first and second embodiments of the present invention. The liquid crystal display device of the present invention is formed of a gate electrode 110 made of an opaque metal such as Ta formed on the substrate 103 and connected to the gate wiring, and a gate made of a material such as SiNx or SiOx stacked on the gate electrode 110. On the insulating film 113, the amorphous silicon layer 115 formed on the gate insulating film 113, the impurity amorphous silicon layer 116 formed on the amorphous silicon layer 115, and the impurity amorphous silicon layer 116. And a source electrode 117 and a drain electrode 118 which are formed and connected to the data wiring and the data electrode 119, respectively.

또한, 상기 박막트랜지스터 위에는 SiNx 또는 SiOx와 같은 물질로 이루어진 보호막(120)이 적층되어 있으며, 기판(103) 전체에 걸쳐 제1배향막(미도시)이 도포되고 배향방향이 결정된다.In addition, a passivation layer 120 made of a material such as SiNx or SiOx is stacked on the thin film transistor, and a first alignment layer (not shown) is applied to the entire substrate 103 and an orientation direction is determined.

도 4에 나타내듯이, 본 발명의 제1실시예에서는 제2기판(104)에 상기 박막트랜지스터, 게이트배선, 데이터배선 근처로 빛이 새는 것을 방지하는 Cr 또는 CrOx와 같은 물질로 이루어진 차광층(106)을 형성하고, 그 위에 컬러필터층(107), 오버코트층(108)을 형성한다. 계속해서, 상기 차광층(106)이 형성된 기판의 영역 및 화소영역에는 ITO(indium tin oxide)와 같은 물질로 이루어진 복수의 공통전극(도면점선표시)(122)을 형성한다. 그 후, 제2배향막(미도시)을 형성하고 상기한 두 기판 사이에 액정을 주입하면 본 발명에 따른 횡전계방식 액정표시소자가 완성된다.As shown in FIG. 4, in the first embodiment of the present invention, a light shielding layer 106 made of a material such as Cr or CrOx, which prevents light from leaking near the thin film transistor, gate wiring, and data wiring on the second substrate 104. ), And the color filter layer 107 and the overcoat layer 108 are formed thereon. Subsequently, a plurality of common electrodes (dotted line display) 122 made of a material such as indium tin oxide (ITO) is formed in an area of the substrate and the pixel area where the light blocking layer 106 is formed. Thereafter, when the second alignment layer (not shown) is formed and the liquid crystal is injected between the two substrates, the transverse electric field type liquid crystal display device according to the present invention is completed.

반면에, 도 5에 나타내듯이, 본 발명의 제2실시예에서는 제2기판(104) 상에 칼라필터층(107) 및 오버코트층(108)을 순서대로 형성하고, 상기 박막트랜지스터, 게이트배선, 데이터배선 근처로 빛이 새는 것을 방지하는 Cr 또는 CrOx와 같은 물질로 이루어진 공통전극(122)을 형성하고, 동시에 화소영역에는 상기 공통전극(122)과 동일한 물질로 이루어진 또 다른 복수의 공통전극을 형성한다. 그 후, 제2배향막(미도시)을 형성하고 상기한 두 기판 사이에 액정을 주입하면 본 발명에 따른 횡경사전계방식 액정표시소자가 완성된다.On the other hand, as shown in Fig. 5, in the second embodiment of the present invention, the color filter layer 107 and the overcoat layer 108 are sequentially formed on the second substrate 104, and the thin film transistors, the gate wirings, and the data are sequentially formed. A common electrode 122 made of a material such as Cr or CrOx is formed to prevent light leakage near the wiring, and at the same time, a plurality of common electrodes made of the same material as the common electrode 122 are formed in the pixel region. . Thereafter, a second alignment layer (not shown) is formed and the liquid crystal is injected between the two substrates to complete the transverse tilt field type liquid crystal display device according to the present invention.

상기한 제1실시예 및 제2실시예는 공통적으로 차광층 영역에서의 상/하전 계와 공통전극과 데이터전극 사이에서의 경사전계를 이용하는데, 이러한 제1 및 제 2실시예의 결과에 따르면 액정층의 구동전압을 약 0.5∼1 Volt 감소시킬 수 있을뿐만 아니라, 종래 횡전계방식에서 잔상의 원인이 되는 잔류전류룰 감소시킬 수 있다.The first and second embodiments described above commonly use a phase / charge field in the light shielding layer region and a gradient electric field between the common electrode and the data electrode. According to the results of the first and second embodiments, Not only can the driving voltage of the layer be reduced by about 0.5 to 1 Volt, but also the residual current that causes afterimages in the conventional transverse electric field system can be reduced.

또한, 종래 단일전계방식과 비교하여 구동전압의 감소 뿐만 아니라 개구율이 약 20∼30% 정도 향상됨을 확인할 수 있었다.In addition, it was confirmed that the opening ratio was improved by about 20 to 30% as well as the driving voltage was reduced compared with the conventional single field method.

상기한 제1배향막 및 제2배향막의 배향방향은 폴리이미드(polyimide) 계열의 배향막을 도포하고 러빙을 실시하여 결정할 수도 있고, 폴리실록산 또는 PVCN(polyvinyl cinnamate)계 물질로 이루어진 광배향막에 광을 조사하여 결정할 수도 있다. 이때, 광의 조사는 편광되거나 또는 편광되지 않은 빛을 사용하여 1회 또는 그 이상을 실시하는 것이 가능하다.The orientation direction of the first alignment layer and the second alignment layer may be determined by applying a polyimide-based alignment layer and rubbing, or irradiating light to an optical alignment layer made of polysiloxane or polyvinyl cinnamate (PVCN) -based material. You can also decide. At this time, the irradiation of light can be performed once or more times using light that is polarized or unpolarized.

본 발명에 따른 횡경사전계방식 액정표시소자는 횡경사전계를 인가하는 적어도 한쌍의 전극을 상/하 기판상에 분리 형성하므로써 액정층의 구동전압을 낮출 수 있을 뿐만 아니라, 상기 분리 형성된 전극을 투명전극으로 하여 광투과율을 증가시키는 것이 가능하고, 잔류전류를 감소시켜 잔상을 제거할 수 있다.In the liquid crystal display device according to the present invention, the driving voltage of the liquid crystal layer may be lowered by forming at least one pair of electrodes on the upper and lower substrates to which the horizontal tilt electric field is applied, and the separated electrodes may be transparent. It is possible to increase the light transmittance by using the electrode, and to remove the residual image by reducing the residual current.

Claims (11)

제 1 기판 및 제 2 기판과,A first substrate and a second substrate, 상기 제 1기판 위에 종횡으로 배열되어 화소영역을 정의하는 게이트배선 및 데이터 배선과,Gate wiring and data wiring arranged vertically and horizontally on the first substrate to define a pixel region; 상기 제 1 기판 위에 형성된 복수의 제 1 전극과,A plurality of first electrodes formed on the first substrate, 상기 제 2 기판 위에 형성된 차광층과,A light blocking layer formed on the second substrate; 상기 화소영역에 대응하는 상기 제 2 기판 위에 형성된 공통배선과,A common wiring formed on the second substrate corresponding to the pixel region; 상기 제 2 기판 위에 형성되어 상기 제 1 전극과 횡경사 전계를 형성하며 일부가 상기 차광층 영역상에 형성되는 복수의 제 2 전극과,A plurality of second electrodes formed on the second substrate to form a transverse slope electric field with the first electrode, a part of which is formed on the light blocking layer region; 상기 제 1 지판과 제 2 기판 사이에 형성된 액정조성물층으로 이루어진 횡경사전계방식 액정표시소자.A transverse gradient field type liquid crystal display device comprising a liquid crystal composition layer formed between the first substrate and the second substrate. 제 1 항에 있어서,The method of claim 1, 상기 게이트배선과 데이터배선의 교차부분에 형성된 박막트랜지스터와,A thin film transistor formed at an intersection of the gate wiring and the data wiring; 상기 제 1 전극 위에 형성된 제 1 배향막을 추가로 포함하는 것을 특징으로 하는 횡경사전계방식 액정표시소자.And a first alignment layer formed on the first electrode. 제 1 항에 있어서, 상기 복수의 제 1 전극과 제 2 전극이 각각 데이터 전극 및 공통전극인 것을 특징으로 하는 횡경사전계방식 액정표시소자.The lateral gradient field type liquid crystal display device according to claim 1, wherein the plurality of first electrodes and the second electrodes are data electrodes and common electrodes, respectively. 제 2 항에 있어서, 상기 제 1 배향막이 광반응성물질 또는 폴리이미드 (polyimide)인 것을 특징으로 하는 횡경사전계방식 액정표시소자.3. The liquid crystal display device according to claim 2, wherein the first alignment layer is a photoreactive material or polyimide. 제 1 항에 있어서,The method of claim 1, 상기 차광층 위에 형성된 칼라필터층과,A color filter layer formed on the light shielding layer, 상기 제 2 전극 위에 형성된 제 2 배향막을 추가로 포함하는 것을 특징으로 하는 횡경사전계방식 액정표시소자.And a second alignment layer formed on the second electrode. 제 1 항에 있어서, 상기 복수의 제 2 전극이 ITO(Indium Tin Oxide)인 것을 특징으로 하는 횡경사전계방식 액정표시소자.The transverse slope field type liquid crystal display device of claim 1, wherein the plurality of second electrodes is indium tin oxide (ITO). 제 5 항에 있어서, 상기 칼라필터층 위에 형성된 오버코트층을 추가로 포함하는 것을 특징으로 하는 횡경사전계방식 액정표시소자.The liquid crystal display of claim 5, further comprising an overcoat layer formed on the color filter layer. 제 1 항에 있어서,The method of claim 1, 상기 제 2 기판 위에 형성된 칼라필터층과,A color filter layer formed on the second substrate; 상기 칼라필터층 위에 형성되어 빛의 누설을 방지하는 차광전극과,A light blocking electrode formed on the color filter layer to prevent leakage of light; 상기 차광전극 위에 형성된 제 2 배향막을 추가로 포함하는 것을 특징으로 하는 횡경사전계방식 액정표시소자.And a second alignment layer formed on the light blocking electrode. 제 8 항에 있어서, 상기 칼라필터층 위에 형성된 오버코트층을 추가로 포함하는 것을 특징으로 하는 횡경사전계방식 액정표시소자.The liquid crystal display device according to claim 8, further comprising an overcoat layer formed on the color filter layer. 제 8 항에 있어서, 상기 차광전극이 공통전극인 것을 특징으로 하는 횡경사전계방식 액정표시소자.10. The liquid crystal display device of claim 8, wherein the light blocking electrode is a common electrode. 제 5 항에 또는 제 8 항에 있어서, 상기 제 2 배향막이 광반응성물질 또는 폴리이미드(polyimide)인 것을 특징으로 하는 횡경사전계방식 액정표시소자.10. The liquid crystal display device according to claim 5 or 8, wherein the second alignment layer is a photoreactive material or polyimide.
KR1019970045836A 1997-09-04 1997-09-04 In plane switching mode liquid crystal display device having electrode structre applying inclined electric field Expired - Lifetime KR100282330B1 (en)

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KR1019970045836A KR100282330B1 (en) 1997-09-04 1997-09-04 In plane switching mode liquid crystal display device having electrode structre applying inclined electric field
US09/143,624 US6549258B1 (en) 1997-09-04 1998-08-28 Hybrid switching mode liquid crystal display device
DE19839789A DE19839789B9 (en) 1997-09-04 1998-09-01 Liquid crystal display device
JP24699498A JP4287514B2 (en) 1997-09-04 1998-09-01 Compound electric field type liquid crystal display element
GB9819255A GB2329062B (en) 1997-09-04 1998-09-03 A hybrid switching mode liquid crystal display device
FR9811089A FR2767952B1 (en) 1997-09-04 1998-09-04 HYBRID SWITCHING LIQUID CRYSTAL DISPLAY

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