KR100275213B1 - in-plane switching mode liquid crystal display device and method of making the same - Google Patents

Abstract

A transverse electric field liquid crystal display device according to the present invention includes a substrate, a gate wiring arranged in parallel with a long axis direction of the substrate, a data wiring arranged perpendicular to the gate wiring to define a pixel region, and the adjacent data wiring. A common wiring formed therebetween, a data electrode and a common electrode formed perpendicular to the common wiring to apply a transverse electric field, and a liquid crystal composition layer formed between the substrate and the corresponding substrate.

Description

Transverse field type liquid crystal display device and a method of manufacturing the same {in-plane switching mode liquid crystal display device and method of making the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display device, and more particularly, to a transverse electric field type liquid crystal display device and a method of manufacturing the same in which the wiring structure and the electrode structure to which the transverse electric field is applied are improved, and the manufacturing process is simplified. It is about.

1 to 2 are plan views and a cross-sectional view taken along line A-A 'of a unit pixel of a conventional transverse electric field type liquid crystal display device. As shown in the drawing, data wiring 1 arranged on a first substrate to define a pixel region, and A gate wiring 2, a common wiring 5 arranged in a pixel in parallel with the gate wiring 2, a thin film transistor arranged at an intersection of the gate wiring 2 and the data wiring 1; The pixel includes a data electrode 19 and a common electrode 11 arranged substantially parallel to the data line 1 in the pixel.

The thin film transistor is formed on the first substrate 3 to form a gate electrode 10 connected to the gate wiring 2, and a gate insulating layer 13 made of a material such as SiNx or SiOx stacked on the gate electrode 10. And a semiconductor layer 15 formed on the gate insulating film 13, an ohmic contact layer 16 formed on the semiconductor layer 15, and an ohmic contact layer 16 formed on the data wiring 1. It consists of a source electrode 17 and a drain electrode 18 respectively connected to the data electrode 19. The common electrode 11 in the pixel is formed on the first substrate and connected to the common wiring, and the data electrode 19 is formed on the gate insulating film 13 and connected to the drain electrode 18 of the thin film transistor. On the thin film transistor, the data electrode 19 and the gate insulating film 13, a protective film 20 made of a material such as SiNx or SiOx is stacked over the entire substrate, and a first alignment film (not shown) is applied thereon and an orientation direction is applied thereon. This is determined.

Further, on the first substrate 3 and the second substrate 4 corresponding to the above, the light shielding layer 6 which prevents light leakage, the color filter layer 7 made of color filter elements of R, G and B and the overcoat Layers 8 are stacked in sequence.

The conventional liquid crystal display device having the above-described structure has a low aperture ratio by a plurality of biased electrodes, and the liquid crystal molecules of the corresponding portion are formed by using a portion where the common electrode and the data electrode overlap with the transverse electric field are used as storage. The common electrode which is driven abnormally and formed in parallel with the gate wiring is formed long in the long axis direction, resulting in a large resistance, which causes the common electrode signal distortion.

The present invention is to solve the above problems of the prior art, a plurality of electrode pairs for applying a transverse electric field is formed parallel to the short axis direction of the substrate, one common wiring is applied to the electrode pair, the common wiring An object of the present invention is to provide a transverse electric field type liquid crystal display device which is paired with two neighboring data lines.

Another object of the present invention is to shorten the manufacturing process by performing the formation of the common wiring and the common electrode in the same manner as the source process.

In order to achieve the above object, the transverse electric field type liquid crystal display device according to the present invention comprises a gate electrode formed on a first substrate and connected to the gate wiring, a gate insulating film stacked on the gate electrode, and formed on the gate insulating film. And a semiconductor layer, an ohmic contact layer formed on the semiconductor layer, and a source and drain electrode formed on the ohmic contact layer and connected to the data line and the data electrode, respectively. Further, the common electrode in the pixel is formed in parallel with the data wiring on the gate insulating film and connected to the common wiring. In this case, the common electrode and the data electrode are formed on a single plane together with the data wiring and the common wiring, and the common wiring is commonly applied to neighboring pixels. A protective film made of a material such as SiNx or SiOx is stacked on the thin film transistor, and a first alignment layer is coated on the entire substrate, and an orientation direction is determined.

On the second substrate corresponding to the first substrate, a light shielding layer is formed to prevent light leakage near the thin film transistor, the gate wiring, the data wiring, and the common wiring, and a color filter layer and an overcoat layer are sequentially formed thereon. . Subsequently, after forming the second alignment film over the entire substrate, a liquid crystal layer is formed between the above two substrates.

1 is a plan view of a general transverse electric field type liquid crystal display device.

FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1. FIG.

3 is a plan view of a transverse electric field type liquid crystal display device according to the present invention.

4 is a cross-sectional view taken along the line BB ′ of FIG. 3.

Explanation of symbols for the main parts of the drawings

103: first substrate 110: gate electrode

111: common electrode 113: gate insulating film

115: semiconductor layer 116: ohmic contact layer

117 source electrode 118 drain electrode

119: data electrode 120: protective film

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

3 to 4 are plan views and cross-sectional views taken along line B-B 'of the transverse electric field type liquid crystal display device according to the present invention. As shown in the drawing, data wirings 101a and 101b arranged on a first substrate to define a pixel region. , 101c and 101d and the gate wiring 102, the common wiring 112 arranged in the pixel perpendicular to the gate wiring 102, the gate wiring 102 and the data wiring 101a, 101b and 101c. And a plurality of thin film transistors arranged at the intersections of 101d, a plurality of data electrodes 119 and a common electrode 111 arranged substantially perpendicular to the data lines 101a, 101b, 101c, and 101d in the pixel. do.

The thin film transistor is formed on the first substrate 103, the gate electrode 110 connected to the gate wiring 102, and the gate insulating layer 113 made of a material such as SiNx or SiOx stacked on the gate electrode 110. And a semiconductor layer 115 formed on the gate insulating layer 113, an ohmic contact layer 116 formed on the semiconductor layer 115, and an ohmic contact layer 116 formed above the data wirings 101a and 101b. And a source electrode 117 and a drain electrode 118 connected to the 101c and 101d and the data electrode 119, respectively. The common electrode 111 in the pixel is connected to the common wiring 112 and is formed on the gate insulating layer 113, and the data electrode 119 formed therewith is connected to the drain electrode 118 of the thin film transistor. On the thin film transistor, the common electrode 111, the common wiring 112, the data electrode 119, and the gate insulating film 113, a protective film 120 made of a material such as SiNx or SiOx is stacked over the entire substrate. An alignment film (not shown) is applied and the orientation direction is determined.

In FIG. 4, reference numeral 130 does not refer to a specific component, but illustrates the shape of the common electrode, the common wiring, and the data electrode shown in the sectional view taken along the line BB ′ of FIG. 3. Reference numeral 131 denotes a gate pad formed together with the gate electrode 110 of the thin film transistor portion.

In the drawings, the components of the second substrate corresponding to the first substrate are the same as those of the structure of the related art, and thus are omitted.

Hereinafter, the manufacturing method of the liquid crystal display element which has the above-mentioned structure is demonstrated.

First, a material such as Cr, Mo, or Ta is patterned on the substrate 103 to form a gate wiring, a gate electrode 110, and a gate pad 131, and then a material such as SiNx or SiOx on the gate electrode 110. The gate insulating film 113 is formed. Subsequently, the semiconductor layer 115 and the ohmic contact layer 116 are formed by patterning amorphous silicon and impurity amorphous silicon on the portion where the gate electrode 110 is formed, and then patterning a material such as Al or Ti to form a source electrode. 117, the drain electrode 118, the common wiring 112, the common electrode 111, and the data electrode 119 are formed along the short axis direction of the substrate 103. In this case, the common line 112 is formed in the middle portion of the neighboring pixel and is commonly applied to two pixels. Finally, after the passivation layer 120 is formed over the entire substrate using the same material as the gate insulating layer 113, the gate pad region is opened by patterning the alignment layer (not shown) over the entire region of the substrate 103. To form. In this case, the alignment direction of the alignment layer may be determined by applying a polyimide-based alignment layer and rubbing, or may be determined by irradiating light to an optical alignment layer made of PSCN (polysiloxane cinnamate) or PVCN (polyvinyl cinnamate) material. have. At this time, the irradiation of light can be performed once or more times using light that is polarized or unpolarized.

According to the manufacturing method described above as a patterning step, patterning a gate electrode on a substrate, patterning a semiconductor layer and an ohmic contact layer on the gate electrode, a source electrode and a drain on the ohmic contact layer Patterning the common electrode and the data electrode in the electrode and the pixel region at the same time, and patterning the protective film over the entire substrate.

In the transverse electric field type liquid crystal display device according to the present invention, not only can the drive resistance be reduced by forming the line in the short axis direction of the substrate, but also the driving voltage can be reduced, and the aperture ratio is achieved by the two pixels sharing one common wiring. Can be increased.

Claims (16)

Substrate, A gate wiring arranged in parallel with the long axis direction of the substrate; A data line arranged perpendicular to the gate line to define a pixel area; Common wiring formed in the minor axis direction of the substrate between adjacent data wirings in the pixel region; A data electrode and a common electrode formed in the major axis direction of the substrate to apply a transverse electric field; And a liquid crystal composition layer formed between the substrate and the corresponding substrate. The method of claim 1, A thin film transistor formed at an intersection of the gate wiring and the data wiring; And a first alignment layer formed on the substrate. The transverse electric field liquid crystal display device according to claim 1, wherein the common wiring, the common electrode and the data electrode are formed on the same plane. The transverse electric field liquid crystal display device according to claim 1, wherein a part of the data electrode is formed on the gate wiring. The method of claim 1, A light shielding layer formed on the substrate corresponding to the substrate; A color filter layer formed on the light shielding layer, And a second alignment layer formed on the color filter layer. The transverse electric field liquid crystal display device according to claim 2 or 5, wherein the first or second alignment layer is a photoreactive material or a polyimide. Providing a substrate, Forming a gate wiring parallel to the long axis direction of the substrate; Forming a data line perpendicular to the gate line together with the gate line to define a pixel area; Simultaneously forming a common wiring applied to two pixel regions between the adjacent data wirings, a common electrode perpendicular to the common wiring, and a data electrode applying a transverse electric field together with the common electrodes; And forming a liquid crystal composition layer between the substrate and a corresponding substrate. The method of claim 7, wherein Forming a gate electrode on the substrate; Forming a gate insulating film on the gate electrode; Forming a semiconductor layer and an ohmic contact layer on the gate insulating film; Forming a source and a drain electrode on the ohmic contact layer; Forming a protective film over the entire substrate; A method of manufacturing a transverse electric field type liquid crystal display device further comprising the step of forming a first alignment layer on the substrate. The method of manufacturing a transverse electric field liquid crystal display device according to claim 7 or 8, wherein the common wiring, the common electrode and the data electrode are formed together with the source and drain electrodes. 8. The method of claim 7, wherein a portion of the data electrode is formed on the gate wiring. The method of claim 7, wherein Forming a light shielding layer on the substrate corresponding to the substrate; Forming a color filter layer on the light blocking layer; A method of manufacturing a transverse electric field type liquid crystal display device further comprising the step of forming a second alignment layer on the color filter layer. The method of manufacturing a transverse electric field liquid crystal display device according to claim 8, wherein the first or second alignment layer is a photoreactive material or polyimide. The method of claim 12, wherein the photoreactive material is a polysiloxane cinnamate (PSCN) or a polyvinyl cinnamate (PVCN) -based material. The method of manufacturing a transverse electric field type liquid crystal display device according to claim 8, wherein the gate insulating film and the protective film are made of the same material. The method of manufacturing a transverse electric field liquid crystal display device according to claim 14, wherein said material is SiNX or SiOX. Forming a gate electrode on a substrate consisting of a switching element region and a pixel region; Forming a gate insulating film, a semiconductor layer, and an ohmic contact layer on the gate electrode of the switching device region; Simultaneously forming a common electrode and a data electrode in the source electrode, the drain electrode, and the pixel area on the ohmic contact layer; A method of manufacturing a transverse electric field type liquid crystal display device comprising the step of forming a protective film over the entire substrate.

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