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KR100203749B1 - Measuring method for metal contamination of poly silicon layer - Google Patents

Measuring method for metal contamination of poly silicon layer Download PDF

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KR100203749B1
KR100203749B1 KR1019950051499A KR19950051499A KR100203749B1 KR 100203749 B1 KR100203749 B1 KR 100203749B1 KR 1019950051499 A KR1019950051499 A KR 1019950051499A KR 19950051499 A KR19950051499 A KR 19950051499A KR 100203749 B1 KR100203749 B1 KR 100203749B1
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안승현
정경희
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윤종용
삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/20—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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Abstract

본 발명은 반도체장치의 웨이퍼상에 형성된 폴리실리콘막내에 있는 금속성분의 량을 측정하여 금속오염의 정도를 측정하는 방법에 관한 것으로서, 시약을 사용하여 상기 폴리실리콘막을 용해하는 단계와; 상기 시약을 전처리하여 매트릭스를 제거하는 단계와; 상기 매트릭스가 제거된 시약을 정량분석하여 극미량의 금속성분을 측정하는 단계를 포함한다. 상술한 측정방법에 의하면, 웨이퍼상에 형성된 폴리실리콘막에 대해서 웨이퍼레벨의 금속오염정도를 극히 정밀하게 분석할 수 있다.The present invention relates to a method for measuring the degree of metal contamination by measuring the amount of a metal component in a polysilicon film formed on a wafer of a semiconductor device, comprising: dissolving the polysilicon film using a reagent; Pretreatment of the reagents to remove the matrix; And quantitatively analyzing the reagent from which the matrix is removed to measure a trace amount of the metal component. According to the above-described measuring method, the degree of metal contamination at the wafer level can be analyzed very precisely with respect to the polysilicon film formed on the wafer.

Description

폴리실리콘막의 금속오염측정방법(a method for analyzing metallic contamination of a polysilicon layer)A method for analyzing metallic contamination of a polysilicon layer

제1도는 종래의 방법으로 폴리실리콘막의 금속오염을 측정하는 단계를 보여주고 있는 플로우챠트.1 is a flowchart showing a step of measuring metal contamination of a polysilicon film by a conventional method.

제2도는 본 발명의 방법에 따라 폴리실리콘막의 금속오염정도를 측정하는 단계를 보여주고 있는 플로우챠트.2 is a flowchart showing the step of measuring the degree of metal contamination of the polysilicon film according to the method of the present invention.

본 발명은 반도체장치의 웨이퍼상에 형성된 막질의 금속오염정도를 평가하는 금속오염측정방법에 관한 것으로서, 구체적으로는 웨이퍼상에 형성된 폴리실리콘막내에 있는 금속성분의 량을 측정하여 금속오염의 정도를 측정하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a metal contamination measurement method for evaluating the degree of metal contamination of a film formed on a wafer of a semiconductor device. Specifically, the present invention relates to a method for measuring metal contamination by measuring the amount of metal in a polysilicon film formed on a wafer. It is about a method of measuring.

일반적으로 반도체소자의 제작도중에 배선막 또는 게이트전극 등의 전극용으로 사용되는 폴리실리콘막을 형성한 후, 여러 가지의 공정들이 그 후 가해진다. 따라서 폴리실리콘막에 대하여 막질의 평가도, 열적성질, 화학적성질, 전기적성질등 광범위하게 그 특성을 측정해야만 한다. 즉, 막두께, 막질이 균일성뿐만아니라, 형성된 폴리실리콘막에 여러 가지의 처리를하여 물성의 변화를 조사해야 한다. 특히, 성막조건에 따른 고밀도화, 결정구조의 변화, 화학적성질의 변화등은 반도체소자의 응용면에서 가장 중요한 평가항목인 것이다.In general, after forming a polysilicon film used for an electrode such as a wiring film or a gate electrode during fabrication of a semiconductor device, various processes are applied thereafter. Therefore, it is necessary to measure the characteristics of polysilicon film extensively such as evaluation of film quality, thermal properties, chemical properties, and electrical properties. That is, not only the film thickness and film quality are uniform, but also the polysilicon film formed must be subjected to various treatments to investigate the change in physical properties. In particular, densification, change in crystal structure, and change in chemical properties according to the film forming conditions are the most important evaluation items in terms of application of semiconductor devices.

이와같이 웨이퍼상에 형성된 폴리실리콘막의 특성, 특히 그 막내에 존재하는 극미량의 금속성분의 오염을 분석하는 것은 반도체소자의 고집적화에 밀접한 관계를 갖는다.Thus, analyzing the characteristics of the polysilicon film formed on the wafer, in particular the contamination of the trace metal component present in the film, is closely related to the high integration of semiconductor devices.

제1도는 종래의 방법으로 웨이퍼상에 형성된 폴리실리콘막의 금속오염의 정도를 측정하기 위한 단계를 보여주고 있다.1 shows a step for measuring the degree of metal contamination of a polysilicon film formed on a wafer by a conventional method.

제1도에 도시된 바와같이, 웨이퍼상에 형성된 폴리실리콘막을 통상의 에천트(etchant)를 사용하여 용해한 다음(단계12), 그 폴리실리콘막이 용해된 에천트를 직접 금속성분이 어느정도로 함유되어 있는지를 측정한다.(단계14).As shown in FIG. 1, the polysilicon film formed on the wafer is dissolved using a common etchant (step 12), and then the etchant in which the polysilicon film is dissolved is directly contained to some extent. (Step 14).

상술한 바와같은 종래의 방법은 아래에서 설명하는 두가지의 중요한 문제점들을 갖고 있다.The conventional method as described above has two important problems described below.

그 문제점중 하나는 포리실리콘막을 용해할 경우에 사용되는 에천트가 통상적으로 반도체제조공정도중에서 폴리실리콘막을 선택적으로 제거할 때 사용되는 에천트를 사용한다는 점이다. 즉, 통상적으로 폴리실리콘막을 식각할 때 사용되는 에천트는 금속적 불순물정도(metallic impurity)가 약 50ppb인 데, 이와같이 통상의 에천트는 그 블랭크 레벨(blank level)이 높기 때문에, 폴리실리콘막이 용해된 그러한 에천트를 분석용 시료로 사용할 경우 웨이퍼레벨의 금속오염, 즉 극미량의 금속오염을 분석할 수 없다.One of the problems is that the etchant used to dissolve the polysilicon film usually uses an etchant used to selectively remove the polysilicon film during the semiconductor manufacturing process. In other words, the etchant used to etch the polysilicon film is typically about 50 ppb of metallic impurity. As such, the conventional etchant has a high blank level, so that the polysilicon film is dissolved. When etchant is used as analytical sample, it is not possible to analyze wafer-level metal contamination, that is, trace metal contamination.

다른 하나는 폴리실리콘막이 용해된 통상의 에천트용액을 분석용 시료로 직접 사용하고 있다는 점이다. 이러한 시료는 분석을 방해하는 성분인 매트릭스가 존재하고 있기 때문에 금속오염측정데이타의 신뢰성이 저하되는 것이다. 즉, 측정용 시료에 매트릭스가 존재하는 경우에는, 분석장치(예를들어, GF-AAS장비)를 사용하여 분석할 때 상술한 매트릭스가 간섭현상을 일으켜서 성분분석을 방해하는 요소로 작용한다.The other is that the common etchant solution in which the polysilicon film is dissolved is used directly as an analysis sample. These samples are deteriorated in the reliability of metal contamination measurement data due to the presence of a matrix that interferes with the analysis. That is, when a matrix exists in a sample for measurement, the above-described matrix causes interference and acts as an element that interferes with component analysis when analyzed using an analysis device (for example, GF-AAS equipment).

따라서 본 발명의 목적은 상술한 제반문제점을 해결하기 위해 제안된것으로서 웨이퍼상에 형성된 폴리실리콘막에 대해서 웨이퍼레벨의 금속오염정도를 정밀하게 분석할 수 있는 폴리실리콘막의 금속오염측정방법을 제공하는 데 있다.Accordingly, an object of the present invention is to provide a method for measuring metal contamination of a polysilicon film which can accurately analyze the degree of metal contamination at the wafer level with respect to the polysilicon film formed on the wafer as proposed to solve the above-mentioned problems. have.

상술한 목적을 달성하기 위한 본 발명의 일특징에 의하면, 폴리실리콘막의 금속오염측정방법은, 시약을 사용하여 상기 폴리실리콘막을 용해하는 단계와; 상기 시약을 전처리하여 매트릭스를 제거하는 단계화; 상기 매트릭스가 제거된 시약을 정량분석하여 극미량의 금속성분을 측정하는 단계를 포함한다.According to one aspect of the present invention for achieving the above object, a method for measuring metal contamination of a polysilicon film, the method comprising: dissolving the polysilicon film using a reagent; Pretreatment of the reagents to remove the matrix; And quantitatively analyzing the reagent from which the matrix is removed to measure a trace amount of the metal component.

이 방법에 있어서, 상기 시약은 CH3COOH : HNO3: HF가 2% : 50% : 0.6%의 조성을 갖는다.In this method, the reagent has a composition of CH 3 COOH: HNO 3 : HF of 2%: 50%: 0.6%.

이 방법에 있어서, 상기 전처리단계는 상기 채취된 시약을 건조시키는 단계이다.In this method, the pretreatment step is a step of drying the collected reagents.

이 방법에 있어서, 상기 시약은 실험실에서 제조된 에천트로서 폴리실리콘막을 통상적으로 식각하는 데 사용되는 에천트보다 상대적으로 블랭크레벨이 낮다.In this method, the reagent is a laboratory prepared etchant having a relatively lower blank level than the etchant typically used to etch the polysilicon film.

이 방법에 있어서, 상기 측정단계는 알루미늄금속의 량을 측정하는 단계이다.In this method, the measuring step is a step of measuring the amount of aluminum metal.

본 발명의 다른 특징에 의하면, 반도체소자의 제조공정중 웨이퍼상에 형성된 폴리실리콘막의 금속오염정도를 측정하는 방법은, 시약을 사용하여 상기 폴리실리콘막을 용해하는 단계와; 상기 폴리실리콘막이 용해된 시약을 소정량 채취하는 단계와; 상기 채취된 시약을 전처리하여 매트릭스를 제거하는 단계와; 상기 매트릭스가 제거된 시약을 정량분석하여 극미량의 금속성분을 측정하는 단계를 포함한다.According to another aspect of the invention, the method for measuring the metal contamination of the polysilicon film formed on the wafer during the manufacturing process of the semiconductor device, the step of dissolving the polysilicon film using a reagent; Collecting a predetermined amount of a reagent in which the polysilicon film is dissolved; Pretreatment of the collected reagents to remove the matrix; And quantitatively analyzing the reagent from which the matrix is removed to measure a trace amount of the metal component.

이하 본 발명의 실시예를 첨부도면 제2도에 의거하여 상세히 설명한다.An embodiment of the present invention will now be described in detail with reference to FIG.

제2도를 참조하면, 본 발명의 신규한 폴리실리콘막의 금속오염측정방법은, 실험실에서 제조한 순수한 시약을 사용하고, 그리고 폴리실리콘막이 용해된 시약을 전처리하여 함유되어 있는 매트릭스를 제거한 다음 금속오염 정도를 측정하는 방법이다.Referring to FIG. 2, the novel method for measuring metal contamination of the polysilicon film of the present invention is performed by using a pure reagent prepared in a laboratory, and pretreating the reagent in which the polysilicon film is dissolved to remove the matrix, followed by metal contamination. How to measure the degree.

다시 제2도에 의하면, 실험실에서 제조한 순수한 시약을 사용하여 웨이퍼상에 형성된 폴리실리콘막을 용해한다(단계 22). 이 시약은 통상적으로 폴리실리콘막을 식각할 때 사용되는 에천트가 아니고, 2% : 50% : 0.6%의 조성을 갖는 CH3COOH : HNO3: HF의 화학용액이다.Referring back to FIG. 2, the polysilicon film formed on the wafer is dissolved using pure reagents prepared in the laboratory (step 22). This reagent is not an etchant normally used to etch polysilicon films, but is a chemical solution of CH 3 COOH: HNO 3 : HF with a composition of 2%: 50%: 0.6%.

이어, 상기 폴리실리콘막이 용해된 시약을 소정량(예를들어 약 30ml)채취한 다음(단계 24), 그 채취한 시약을 건조시키는 전처리를 하여서 간섭등을 일으켜서 측정을 방해하는 성분인 매트릭스를 제거한다(단계 26).Subsequently, a predetermined amount (for example, about 30 ml) of the reagent in which the polysilicon film is dissolved is taken (step 24), followed by pretreatment to dry the collected reagent, thereby causing an interference light to remove the matrix, which is a component that interferes with the measurement. (Step 26).

마지막으로 상술한 매트릭스가 제거된 시약을 정량분석하여서 그 시약에 함유된 극미량의 금속성분, 즉 알루미늄의 량을 측정한다(단계 28).Finally, the reagent from which the above-described matrix is removed is quantitatively analyzed to determine the amount of trace metal component, i.e., aluminum, contained in the reagent (step 28).

이 실시예에서는 폴리실리콘막이 용해된 시료를 소정량 채취하여 전처리단계로 진행하지만, 상기 시료를 채취하는 단계없이 바로 전처리단계로 진행할 수도 있다.In this embodiment, a predetermined amount of the sample in which the polysilicon film is dissolved is collected and proceeds to the pretreatment step. However, the sample may proceed directly to the pretreatment step without collecting the sample.

상술한 바와같이 본 발명의 폴리실리콘막의 금속오염측정방법에 의하면, 폴리실리콘막을 용해하는 시약을 실험실에서 직접 제작하여 사용하기 때문에 극미량의 금속오염정도를 측정할 수 있다. 즉, 본 발명에서 사용하는 시약은 금속적 불순물정도(metallic impurity)가 웨이퍼레벨의 블랭크레벨이기 때문에 극미량의 금속오염을 분석할 수 있다.As described above, according to the metal contamination measurement method of the polysilicon film of the present invention, since the reagent for dissolving the polysilicon film is produced and used directly in a laboratory, the degree of trace metal contamination can be measured. That is, the reagent used in the present invention can analyze the trace amount of metal contamination since the metallic impurity is at the wafer level blank level.

또한, 본 발명의 방법에 있어서는, 폴리실리콘막이 용해된 시료를 채취 및 전처리를하여 매트릭스를 제거하기 때문에 분석시 간섭을 일으키는 매트릭스의 제거로 정밀한 분석을 할 수 있다. 그 결과, 금속오염을 측정한 데이터의 신뢰성이 높아지게 된다.In addition, in the method of the present invention, the sample in which the polysilicon film is dissolved is collected and pretreated to remove the matrix, so that accurate analysis can be performed by removing the matrix causing interference during analysis. As a result, the reliability of the data measured metal contamination becomes high.

Claims (5)

반도체소자의 제조공정중 웨이퍼상에 형성된 포리실리콘막의 금속오염 정도를 측정하는 방법에 있어서, 시약을 사용하여 상기 폴리실리콘막을 용해하는 단계와; 상기 시약을 건조시키는 전처리를 수행하여 매트릭스를 제거하는 단계와: 상기 매트릭스가 제거된 시약을 정량분석하여 극미량의 금속성분을 측정하는 단계를 포함하는 것을 특징으로 하는 폴리실리콘막의 금속오염측정방법.A method of measuring metal contamination of a polysilicon film formed on a wafer during a semiconductor device manufacturing process, the method comprising: dissolving the polysilicon film using a reagent; Performing a pretreatment to dry the reagent to remove the matrix; and quantitatively analyzing the reagent from which the matrix is removed to measure a trace amount of the metal component. 제1항에 있어서, 상기 시약은 CH3COOH : HNO3: HF가 2% : 50% : 0.6%의 조성을 갖는 것을 특징으로 하는 폴리실리콘막의 금속오염측정방법.The method of claim 1, wherein the reagent has a composition of CH 3 COOH: HNO 3 : HF of 2%: 50%: 0.6%. 제1항에 있어서, 상기 시약은 실험실에서 제조된 에천트로서 블랭크레벨이 통상의 식각공정에 사용되는 에천트보다 상대적으로 낮은 것을 특징으로 하는 폴리실리콘막의 금속오염측정방법The method of claim 1, wherein the reagent is an etchant prepared in a laboratory, and the blank level is relatively lower than an etchant used in a conventional etching process. 제1항에 있어서, 상기 측정단계는 알루미늄금속의 량을 측정하는 것을 특징으로 하는 폴리실리콘막의 금속오염측정방법.The method of claim 1, wherein the measuring step measures the amount of aluminum metal. 반도체소자의 제조공정중 웨이퍼상에 형성된 폴리실리콘막의 금속오염정도를 측정하는 방법에 있어서, 시약을 사용하여 상기 폴리실리콘막을 용해하는 단계와; 상기 폴리실리콘막이 용해된 시약을 소정량 채취하는 단계와; 상기 채취된 시약을 전처리하여 매트릭스를 제거하는 단계와; 상기 매트릭스가 제거된 시약을 정량분석하여 극미량의 금속성분을 측정하는 단계를 포함하는 것을 특징으로 하는 폴리실리콘막의 금속오염 측정방법.CLAIMS 1. A method for measuring metal contamination of a polysilicon film formed on a wafer during a semiconductor device manufacturing process, the method comprising: dissolving the polysilicon film using a reagent; Collecting a predetermined amount of a reagent in which the polysilicon film is dissolved; Pretreatment of the collected reagents to remove the matrix; And quantitatively analyzing the reagent from which the matrix has been removed, and measuring a trace amount of a metal component.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064657B1 (en) 2010-03-09 2011-09-15 주식회사 엘지실트론 Apparatus and method of processing polysilicon
CN104078378A (en) * 2014-07-02 2014-10-01 武汉新芯集成电路制造有限公司 Method for detecting metal contamination

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* Cited by examiner, † Cited by third party
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KR100700280B1 (en) * 2005-11-17 2007-03-26 동부일렉트로닉스 주식회사 Method of measuring component concentration of semiconductor thin film
KR100906279B1 (en) * 2007-10-01 2009-07-06 주식회사 실트론 Method for Analyzing Metal Contamination in Silicon Wafer Bulk

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064657B1 (en) 2010-03-09 2011-09-15 주식회사 엘지실트론 Apparatus and method of processing polysilicon
CN104078378A (en) * 2014-07-02 2014-10-01 武汉新芯集成电路制造有限公司 Method for detecting metal contamination

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