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KR100197164B1 - N-(camphorsulfonyloxy) maleimide and preparation for the same - Google Patents

N-(camphorsulfonyloxy) maleimide and preparation for the same Download PDF

Info

Publication number
KR100197164B1
KR100197164B1 KR1019980042275A KR19980042275A KR100197164B1 KR 100197164 B1 KR100197164 B1 KR 100197164B1 KR 1019980042275 A KR1019980042275 A KR 1019980042275A KR 19980042275 A KR19980042275 A KR 19980042275A KR 100197164 B1 KR100197164 B1 KR 100197164B1
Authority
KR
South Korea
Prior art keywords
camphorsulfonyloxy
maleimide
preparation
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980042275A
Other languages
Korean (ko)
Inventor
Kwang-Duk Ahn
Chan-Moon Chung
Original Assignee
Korea Inst Sci & Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Inst Sci & Tech filed Critical Korea Inst Sci & Tech
Application granted granted Critical
Publication of KR100197164B1 publication Critical patent/KR100197164B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36Amides or imides
    • C08F222/40Imides, e.g. cyclic imides
    • C08F222/404Imides, e.g. cyclic imides substituted imides comprising oxygen other than the carboxy oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/06Hydrocarbons
    • C08F212/08Styrene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/12Esters of monohydric alcohols or phenols
    • C08F220/16Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1804C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36Amides or imides
    • C08F222/40Imides, e.g. cyclic imides
    • C08F222/408Imides, e.g. cyclic imides substituted imides comprising other heteroatoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Pyrrole Compounds (AREA)
KR1019980042275A 1996-02-06 1998-10-09 N-(camphorsulfonyloxy) maleimide and preparation for the same Expired - Fee Related KR100197164B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960002773A KR0178332B1 (en) 1996-02-06 1996-02-06 N-camphorsulfonyloxymaleimide copolymer and preparation method thereof

Publications (1)

Publication Number Publication Date
KR100197164B1 true KR100197164B1 (en) 1999-06-15

Family

ID=19450793

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019960002773A Expired - Fee Related KR0178332B1 (en) 1996-02-06 1996-02-06 N-camphorsulfonyloxymaleimide copolymer and preparation method thereof
KR1019980042275A Expired - Fee Related KR100197164B1 (en) 1996-02-06 1998-10-09 N-(camphorsulfonyloxy) maleimide and preparation for the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
KR1019960002773A Expired - Fee Related KR0178332B1 (en) 1996-02-06 1996-02-06 N-camphorsulfonyloxymaleimide copolymer and preparation method thereof

Country Status (2)

Country Link
JP (1) JP2834723B2 (en)
KR (2) KR0178332B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100574495B1 (en) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 Photoacid generator polymer, preparation method thereof, and upper anti-reflective coating composition containing same
DE102005060061A1 (en) 2005-06-02 2006-12-07 Hynix Semiconductor Inc., Ichon A polymer for immersion lithography, a photoresist composition containing the same, a method of manufacturing a semiconductor device, and a semiconductor device
CN110358010B (en) * 2019-07-16 2021-11-23 儒芯微电子材料(上海)有限公司 Alkali soluble polymer resin and preparation method and application thereof

Also Published As

Publication number Publication date
JP2834723B2 (en) 1998-12-14
KR970061937A (en) 1997-09-12
JPH09227634A (en) 1997-09-02
KR0178332B1 (en) 1999-05-15

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