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KR0172779B1 - 감광막 제거 방법 - Google Patents

감광막 제거 방법 Download PDF

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KR0172779B1
KR0172779B1 KR1019960007036A KR19960007036A KR0172779B1 KR 0172779 B1 KR0172779 B1 KR 0172779B1 KR 1019960007036 A KR1019960007036 A KR 1019960007036A KR 19960007036 A KR19960007036 A KR 19960007036A KR 0172779 B1 KR0172779 B1 KR 0172779B1
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photoresist
film
plasma
oxygen
photoresist film
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KR970066727A (ko
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최영문
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김주용
현대전자산업주식회사
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Priority claimed from JP7323602A external-priority patent/JP3038309B2/ja
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Abstract

본 발명은 감광막 건식 제거(strip) 공정시, 초기에는 감광막 표면에 생성되어 있는 폴리머가 제거되면서 경화된 감광막의 표면 일부두께가 제거되도록 불화탄소와 산소가 혼합된 가스의 플라즈마를 사용하여 공정을 진행하고, 이후에는 산소 플라즈마만을 이용하여 남아 있는 감광막을 제거하는 것으로, 이에 의해 경화된 감광막과 부산물인 폴리머를 효과적으로 제거할 뿐만 아니라, 감광막 하부층인 산화막 또는 폴리실리콘막의 데미지(damage)를 줄일 수 있다.

Description

감광막 제거방법
본 발명은 반도체 소자 제조 공정중 감광막 마스크를 사용한 식각공정시 발생한 경화된 감광막과 부산물을 효율적으로 제거하기 위한 방법에 관한 것이다.
반도체 제조 공정에서 산화막 또는 폴리실리콘막 등을 선택식각하여 소정의 패턴을 형성하기 위해 마스크 물질로 감광막 패턴을 사용하고 있다. 그리고, 식각이 완료된 이후에는 감광막은 소자에 필요없는 층이므로 제거하여야 한다.
한편, 감광막을 마스크로 산화막 또는 다결정실리콘막등을 식각할시 식각 공정중 플라즈마로 인하여 감광막은 경화되며, 반응 가스와 반응물의 부산물인 폴리머가 발생하게 된다.
따라서, 감광막 제거시 종래에는 산소(O2) 또는 오존(O3) 플라즈마를 이용하며 일차적으로 감광막을 제거하고, 이후에 불산(HF) 용액에서 습식으로 잔류 감광막 및 부산물을 제거하는 방법을 사용하고 있다. 불산 용액에서 별도의 습식 제거 공정을 거치는 것은 산소 또는 오존에 의한 건식 제거시 경화된 감광막과 부산물인 폴리머가 완벽히 제거되지 않고 표면에 잔존하기 때문이다. 그러나, 습식 감광막 제거시 웨이퍼 표면에 잔존하는 물질들은 파티클(Particle)로 작용하여 웨이퍼 표면을 오염시키는 문제점을 수반하게 된다.
본 발명은 상기 문제점을 해결하기 위하여 안출된 것으로, 경화된 감광막 및 반응부산물인 폴리머를 감광막의 건식 스트립(strip)시 효과적으로 제거하여 후속 습식 제거 공정의 부담을 덜 수 있는 감광막 제거 방법을 제공함을 그 목적으로 한다.
상기 목적을 달성하기 위한 본 발명의 감광막 제거방법은, 반도체소자 제조 공정중 기판 상에 형성된 감광막을 제거하는 방법에 있어서, 불화탄소 계열 가스: 산소 계열 가스가 1∼2 : 10의 비율로 혼합된 가스의 플라즈마를 이용하여 상기 감광막의 표면 일부두께를 건식 제거하는 제1단계; 및 상기 불화탄소계열의 가스 없이 상기 산소 계열 가스의 플라즈마를 사용하여 잔류하는 감광막을 제거하는 제2단계를 포함하여 이루어지는 것을 특징으로 한다.
상술한 바와 같이, 본원발명은 감광막 건식 제거(strip) 공정에서 산소(O2) 플라즈마에 불화탄소(CF4)를 첨가하여 플루오르의 이온 또는 라디칼(Radical)을 생성하고, 이 플루오르의 이온 또는 라디칼(Radical)이 경화된 감광막 및 폴리머와 빠른 속도로 반응하도록 하는 것이다.
또한, 플루오르의 이온 또는 라디칼(Radical)은 잘 알려진 바와 같이 산화막 또는 폴리실리콘과 잘 반응하기 때문에 계속적으로 불화탄소(CF4)를 첨가하여 감광막을 건식 제거하면 감광막 하부층인 산화막 또는 폴리실리콘막이 데미지(damage)를 받게된다.
따라서, 감광막 건식 제거 공정시, 초기에는 감광막 표면에 생성되어 있는 폴리머가 제거되면서 경화된 감광막의 표면 일부두께가 제거되도록 불화탄소와 산소가 혼합한 가스의 플라즈마를 사용하여 공정을 진행하고, 이후에는 산소 플라즈마만을 이용하여 남아 있는 감광막을 제거한다.
이렇게 두단계로 나누어 공정을 진행할 경우, 경화된 감광막과 부산물인 폴리머를 효과적으로 제거할 수 있을 뿐만 아니라, 감광막 하부층인 산화막 또는 폴리실리콘막의 데미지(damage)를 줄일 수 있다.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 설명하기로 한다.
먼저, 예컨대 산화막 또는 폴리실리콘막 등의 하부층 상에 포토리소그라피 공정에 의해 감광막 패턴을 형성하고, 이 감광막 패턴을 마스크로하여 산화막 또는 폴리실리콘막을 식각한다. 이때, 감광막 표면은 경화될 것이고, 감광막의 표면 상에는 폴리머가 생성되게 된다.
이어서, 감광막 건식 제거(strip) 장치에서, 불화탄소 : 산소 비율이 1∼2 : 10으로 조절된 혼합가스의 플라즈마를 사용하여 1분에서 10분 가량 공정을 진행하므로써, 폴리머와 경화된 감광막 표면의 일부 두께를 건식 제거한다.
계속해서, 단지 산소 플라즈마만을 이용하여 20분 내지 50분간 공정을 진행하여 잔류하는 감광막을 건식 제거한다.
그리고, 웨이퍼 표면의 세정을 위하여 불산 대신 황산으로만 습식 감광막 제거 공정을 더 진행한다. 황산을 사용한 습식 세정 공정을 생략할 수도 있다.
상술한 바와 같이 본 발명은 산소 계열 가스 및 불화탄소 계열 가스가 혼합된 플라즈마 분위기에서 감광막을 제거함으로써, 경화된 감광막 및 부산물인 폴리머를 효과적으로 제거하여 후속 습식 세정 공정의 부담을 덜 수 있다.
또한, 감광막의 건식 제거시 첨가된 불화탄소에 의해 발생될 수 있는 감광막 하부층의 데미지를 효과적으로 억제할 수 있다.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.

Claims (3)

  1. 반도체소자 제조 공정중 기판 상에 형성된 감광막을 제거하는 방법에 있어서, 불화탄소 계열 가스 : 산소 계열 가스가 1∼2 : 10의 비율로 혼합된 가스의 플라즈마를 이용하여 상기 감광막의 표면 일부두께를 건식 제거하는 제1단계; 및 상기 불화탄소 계열의 가스 없이 상기 산소 계열 가스의 플라즈마를 사용하여 잔류하는 감광막을 제거하는 제2단계를 포함하여 이루어진 감광막 제거방법.
  2. 제1항에 있어서, 상기 제1단계는 1분 내지 10분간 실시하고, 상기 제2단계는 20분 내지 50분간 실시함을 특징으로 하는 감광막 제거방법.
  3. 제1항 또는 제2항에 있어서, 상기 제2단계 후, 황산 용액에서 세정하는 단계를 더 포함하여 이루어진 감광막 제거방법.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623923B1 (ko) * 2005-09-29 2006-09-13 주식회사 하이닉스반도체 반도체소자의 감광막 스트립 방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952417A (en) * 1996-12-17 1999-09-14 General Electric Co. Composition and method for improved heat performance in a polyphenylene ether containing substrate
KR20000069101A (ko) 1997-09-25 2000-11-25 야스이 쇼사꾸 강화, 난연화 열가소성 수지 조성물 및 이의 제법
JP3060297B2 (ja) * 1998-02-10 2000-07-10 株式会社コスモ総合研究所 樹脂組成物、成形物及び樹脂組成物の製造方法
JP3474774B2 (ja) * 1998-05-29 2003-12-08 リコーマイクロエレクトロニクス株式会社 インクジェットヘッドのノズルプレートの製造方法
US6174427B1 (en) * 1998-09-24 2001-01-16 The Dow Chemical Company Process for the preparation of electromotively coated filled thermoset articles
JP2001052371A (ja) * 1999-08-05 2001-02-23 Mitsumi Electric Co Ltd 光ピックアップ及び光学ベース
JP3977563B2 (ja) 1999-11-02 2007-09-19 ダイセル化学工業株式会社 熱可塑性樹脂組成物
TW539614B (en) * 2000-06-06 2003-07-01 Matsushita Electric Works Ltd Laminate
EP1199336B1 (de) * 2000-10-21 2014-01-15 Evonik Degussa GmbH Funktionalisierte, strukturmodifizierte Kieselsäuren
MXPA02005829A (es) * 2001-06-13 2004-12-13 Denso Corp Tablero de cableados impresos con dispositivo electrico incrustado y metodo para la manufactura de tablero de cableados impresos con dispositivo electrico incrustado.
US6926547B2 (en) 2001-07-06 2005-08-09 Delphi Technologies, Inc. Electrical connector
DE10143520A1 (de) * 2001-09-05 2003-04-03 Siemens Dematic Ag Lösung und Verfahren zum Bearbeiten der Oberfläche von Kunststoffen, insbesondere von LCP-Substraten zur Verbesserung der Haftung von Metallisierungen und Verwendung einer derartigen Lösung
GB2410620B8 (en) * 2002-09-16 2008-08-04 World Properties Inc Liquid crystalline polymer composites, method of manufacture thereof, and articles formed therefrom
US7026032B2 (en) * 2003-11-05 2006-04-11 E. I. Du Pont De Nemours And Company Polyimide based compositions useful as electronic substrates, derived in part from (micro-powder) fluoropolymer, and methods and compositions relating thereto
JP2009098654A (ja) * 2007-09-28 2009-05-07 Dainippon Printing Co Ltd 光学積層体、偏光板及び画像表示装置
KR100967633B1 (ko) * 2008-06-24 2010-07-07 (주)볼케닉스 기능성 합성수지 및 그 제조방법
KR20120111255A (ko) * 2011-03-31 2012-10-10 엘에스전선 주식회사 유연성 및 밀착성이 강화된 내코로나 방전성 절연 도료 조성물 및 이를 도포하여 형성된 절연 피막을 포함하는 절연 전선
TWI521016B (zh) * 2012-07-18 2016-02-11 財團法人工業技術研究院 蝕刻含聚亞醯胺之膜層的方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3208823A (en) * 1958-10-20 1965-09-28 Philadelphia Quartz Co Finely divided silica product and its method of preparation
US3998781A (en) * 1975-04-14 1976-12-21 Chemetron Corporation Polyolefin composition and method for minimizing migration of U.V. absorber therein
JPS5324536A (en) * 1976-08-20 1978-03-07 Tokuyama Soda Kk Method of installing battery separator
GB2029420B (en) * 1977-08-11 1982-09-15 Kestrel Chemicals Ltd Thermoplastic resin compositions containing a filler and artifacts formed therefrom
US4325992A (en) * 1981-01-05 1982-04-20 Crown City Plating Co. Electroless plating of polycarbonates
US4431779A (en) * 1982-04-02 1984-02-14 General Electric Company Polyetherimide-polyphenylene ether blends
JPH07106304B2 (ja) * 1986-03-03 1995-11-15 旭化成工業株式会社 コバルトイオンの除去方法
JPH0739534B2 (ja) * 1986-12-10 1995-05-01 ポリプラスチックス株式会社 表面特性の良好な液晶性ポリエステル樹脂組成物
NL8701585A (nl) * 1987-07-06 1989-02-01 Gen Electric Polymeermengsel met gefunctionaliseerde polyfenyleenether en polyetherimide.
US4873287A (en) * 1987-12-30 1989-10-10 General Electric Company Flame retardant ternary blends of polyetherimide, polyphenylene ether and block copolymer of a vinyl aromatic hydrocarbon and an alkene compound
TW225511B (ko) * 1989-12-14 1994-06-21 Nissan Chemical Ind Ltd
US5354611A (en) * 1990-02-21 1994-10-11 Rogers Corporation Dielectric composite
JPH0450246A (ja) * 1990-06-19 1992-02-19 Asahi Chem Ind Co Ltd 多孔性ポリマーの精製方法
US5179165A (en) * 1991-06-12 1993-01-12 International Flavors & Fragrances Inc. Ethylene/methacrylic acid copolymers in poly(phenylene sulfide) compositions
JP3216190B2 (ja) * 1992-01-07 2001-10-09 三菱化学株式会社 塗装された軟質成形体
AU5131793A (en) * 1992-09-21 1994-04-12 Thermoset Plastics, Inc. Thermoplastic modified, thermosetting polyester encapsulants for microelectronics
US5494943A (en) * 1993-06-16 1996-02-27 Minnesota Mining And Manufacturing Company Stabilized cationically-curable compositions
US5502098A (en) * 1993-06-28 1996-03-26 Cosmo Research Institute Polymer composition for electrical part material
JP3437222B2 (ja) * 1993-08-20 2003-08-18 三菱化学株式会社 塗装を施した自動車用部材
US5492586A (en) * 1993-10-29 1996-02-20 Martin Marietta Corporation Method for fabricating encased molded multi-chip module substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623923B1 (ko) * 2005-09-29 2006-09-13 주식회사 하이닉스반도체 반도체소자의 감광막 스트립 방법

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