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KR0169552B1 - 전계효과형 반도체 장치 및 그 제조방법 - Google Patents

전계효과형 반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR0169552B1
KR0169552B1 KR1019950003392A KR19950003392A KR0169552B1 KR 0169552 B1 KR0169552 B1 KR 0169552B1 KR 1019950003392 A KR1019950003392 A KR 1019950003392A KR 19950003392 A KR19950003392 A KR 19950003392A KR 0169552 B1 KR0169552 B1 KR 0169552B1
Authority
KR
South Korea
Prior art keywords
semiconductor
semiconductor element
gate electrode
layer
gate
Prior art date
Application number
KR1019950003392A
Other languages
English (en)
Korean (ko)
Other versions
KR950026034A (ko
Inventor
요시후미 도모마쯔
요우이찌 이시무라
Original Assignee
기다오까 다까시
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 기다오까 다까시, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 기다오까 다까시
Publication of KR950026034A publication Critical patent/KR950026034A/ko
Application granted granted Critical
Publication of KR0169552B1 publication Critical patent/KR0169552B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Electronic Switches (AREA)
KR1019950003392A 1994-02-28 1995-02-21 전계효과형 반도체 장치 및 그 제조방법 KR0169552B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-029516 1994-02-28
JP02951694A JP3361874B2 (ja) 1994-02-28 1994-02-28 電界効果型半導体装置

Publications (2)

Publication Number Publication Date
KR950026034A KR950026034A (ko) 1995-09-18
KR0169552B1 true KR0169552B1 (ko) 1999-01-15

Family

ID=12278270

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950003392A KR0169552B1 (ko) 1994-02-28 1995-02-21 전계효과형 반도체 장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US5729032A (fr)
EP (1) EP0669658B1 (fr)
JP (1) JP3361874B2 (fr)
KR (1) KR0169552B1 (fr)
DE (1) DE69534581T2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101413294B1 (ko) * 2013-03-28 2014-06-27 메이플세미컨덕터(주) 전력용 센스 모스펫

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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US6002153A (en) * 1995-12-07 1999-12-14 Kabushiki Kaisha Toshiba MOS type semiconductor device with a current detecting function
JPH10125896A (ja) * 1996-10-16 1998-05-15 Fuji Electric Co Ltd 絶縁ゲート型サイリスタ
JP3480811B2 (ja) 1997-07-15 2003-12-22 株式会社東芝 電圧駆動型電力用半導体装置
JP3382172B2 (ja) * 1999-02-04 2003-03-04 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
US6717785B2 (en) * 2000-03-31 2004-04-06 Denso Corporation Semiconductor switching element driving circuit
JP2003069019A (ja) * 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
DE112009004805B4 (de) * 2009-05-28 2019-03-28 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
JP5369300B2 (ja) * 2009-09-16 2013-12-18 三菱電機株式会社 半導体装置およびその製造方法
JP5779025B2 (ja) 2010-11-08 2015-09-16 株式会社東芝 半導体装置
JP2013115223A (ja) * 2011-11-29 2013-06-10 Toyota Motor Corp 半導体装置
WO2014013618A1 (fr) * 2012-07-20 2014-01-23 三菱電機株式会社 Dispositif semi-conducteur et son procédé de fabrication
WO2014097739A1 (fr) 2012-12-17 2014-06-26 富士電機株式会社 Dispositif à semiconducteur et circuit de détection de courant l'utilisant
JP6320808B2 (ja) 2014-03-19 2018-05-09 富士電機株式会社 トレンチｍｏｓ型半導体装置
JP6772328B2 (ja) * 2014-05-12 2020-10-21 ローム株式会社 半導体装置
JP6510310B2 (ja) 2014-05-12 2019-05-08 ローム株式会社 半導体装置
US10355127B2 (en) * 2015-07-02 2019-07-16 Mitsubishi Electric Corporation Semiconductor device
US10056370B2 (en) * 2015-07-16 2018-08-21 Fuji Electric Co., Ltd. Semiconductor device
US10505028B2 (en) 2015-09-16 2019-12-10 Fuji Electric Co., Ltd. Semiconductor device including a shoulder portion and manufacturing method
JP6787348B2 (ja) 2016-02-17 2020-11-18 富士電機株式会社 半導体素子の過電流保護装置
JP2018067621A (ja) * 2016-10-19 2018-04-26 トヨタ自動車株式会社 半導体装置およびその製造方法
JP6825298B2 (ja) * 2016-10-19 2021-02-03 トヨタ自動車株式会社 半導体装置
JP6939059B2 (ja) 2017-04-27 2021-09-22 富士電機株式会社 半導体素子の駆動装置
JP7205091B2 (ja) 2018-07-18 2023-01-17 富士電機株式会社 半導体装置
JP7223543B2 (ja) 2018-10-05 2023-02-16 ローム株式会社 半導体装置
KR102153550B1 (ko) * 2019-05-08 2020-09-08 현대오트론 주식회사 전력 반도체 소자

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
US4135102A (en) * 1977-07-18 1979-01-16 Mostek Corporation High performance inverter circuits
JPS56162861A (en) * 1980-05-20 1981-12-15 Nec Corp Semiconductor integrated circuit device
JPS60132359A (ja) * 1983-12-20 1985-07-15 Nec Corp 過電圧保護用半導体装置
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device
JP2892415B2 (ja) * 1990-02-01 1999-05-17 沖電気工業株式会社 半導体素子の製造方法
JPH03235368A (ja) * 1990-02-10 1991-10-21 Toshiba Corp 半導体装置
JP2876694B2 (ja) * 1990-03-20 1999-03-31 富士電機株式会社 電流検出端子を備えたｍｏｓ型半導体装置
JPH04297039A (ja) * 1991-03-26 1992-10-21 Oki Electric Ind Co Ltd 半導体素子の製造方法
DE4219019B4 (de) * 1991-06-10 2004-12-16 Fuji Electric Co., Ltd., Kawasaki MOS-Halbleiterbauelement
US5321281A (en) * 1992-03-18 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of fabricating same
JPH05291913A (ja) * 1992-04-08 1993-11-05 Fuji Electric Co Ltd 半導体スイッチング装置
GB9207849D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101413294B1 (ko) * 2013-03-28 2014-06-27 메이플세미컨덕터(주) 전력용 센스 모스펫

Also Published As

Publication number Publication date
DE69534581D1 (de) 2005-12-15
EP0669658A2 (fr) 1995-08-30
KR950026034A (ko) 1995-09-18
EP0669658B1 (fr) 2005-11-09
EP0669658A3 (fr) 1999-10-06
JPH07240516A (ja) 1995-09-12
JP3361874B2 (ja) 2003-01-07
US5729032A (en) 1998-03-17
DE69534581T2 (de) 2006-08-10

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