KR0166855B1 - 웨이퍼의 보호막 도포장비 - Google Patents
웨이퍼의 보호막 도포장비 Download PDFInfo
- Publication number
- KR0166855B1 KR0166855B1 KR1019950046843A KR19950046843A KR0166855B1 KR 0166855 B1 KR0166855 B1 KR 0166855B1 KR 1019950046843 A KR1019950046843 A KR 1019950046843A KR 19950046843 A KR19950046843 A KR 19950046843A KR 0166855 B1 KR0166855 B1 KR 0166855B1
- Authority
- KR
- South Korea
- Prior art keywords
- pressure
- pipe
- filter
- wafer
- purge
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 19
- 239000007888 film coating Substances 0.000 title claims abstract description 11
- 238000009501 film coating Methods 0.000 title claims abstract description 11
- 238000010926 purge Methods 0.000 claims abstract description 25
- 235000012431 wafers Nutrition 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 9
- 239000006227 byproduct Substances 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
Claims (4)
- 배기관과 N2관을 퍼지시키기 위해 본체의 외부로부터 인입되어 각 N2관에 설치된 필터의 전방으로 연결되는 N2퍼지관과, 상기 본체 외부에 위치된 N2퍼지관상에 설치되는 압력조정기 및 압력게이지 그리고 필터와, 상기 N2퍼지관의 연결부위에 설치되어 N2가스의 취입을 제어하는 수동밸브로 구성됨을 특징으로 하는 웨이퍼의 보호막 도포장비.
- 제1항에 있어서, 상기 각 배기관에 설치된 필터의 전방으로 니이들밸브를 설치하고 필터와 니이들밸브사이에는 니이들밸브의 조작에 따른 각 반응실의 배기압력을 나타내는 압력센서를 설치함을 특징으로 하는 웨이퍼의 보호막 도포장비.
- 제1항에 있어서, 상기 각 N2관에 설치된 필터의 전방으로 니이들밸브를 설치하고 상기 필터와 니이들밸브사이에는 니이들밸브의 조작에 따른 각 반응실의 N2가스의 공급압력을 나타내는 압력센서를 설치함을 특징으로 하는 웨이퍼의 보호막 도포장비.
- 제1항에 있어서, 상기 각 배기관 및 N2관에 설치된 필터의 전방으로 니이들밸브를 각각 설치하고 상기 필터와 니이들밸브사이에는 니이들밸브의 조작에 따른 각 반응실의 배기압력 및 N2가스의 공급압력을 나타내는 압력센서를 각각 설치함을 특징으로 하는 웨이퍼의 보호막 도포장비.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046843A KR0166855B1 (ko) | 1995-12-05 | 1995-12-05 | 웨이퍼의 보호막 도포장비 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950046843A KR0166855B1 (ko) | 1995-12-05 | 1995-12-05 | 웨이퍼의 보호막 도포장비 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970052554A KR970052554A (ko) | 1997-07-29 |
KR0166855B1 true KR0166855B1 (ko) | 1999-02-01 |
Family
ID=19437884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950046843A KR0166855B1 (ko) | 1995-12-05 | 1995-12-05 | 웨이퍼의 보호막 도포장비 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0166855B1 (ko) |
-
1995
- 1995-12-05 KR KR1019950046843A patent/KR0166855B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970052554A (ko) | 1997-07-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US12195855B2 (en) | Gas-phase reactor system including a gas detector | |
US6074202A (en) | Apparatus for manufacturing a semiconductor material | |
US5554226A (en) | Heat treatment processing apparatus and cleaning method thereof | |
US6165272A (en) | Closed-loop controlled apparatus for preventing chamber contamination | |
KR20050028943A (ko) | 저압 화학기상증착 장치의 압력조절 시스템 | |
US7165443B2 (en) | Vacuum leakage detecting device for use in semiconductor manufacturing system | |
US20080311731A1 (en) | Low pressure chemical vapor deposition of polysilicon on a wafer | |
US8051870B2 (en) | Pressure reduction process device, pressure reduction process method, and pressure regulation valve | |
KR0166855B1 (ko) | 웨이퍼의 보호막 도포장비 | |
US6139640A (en) | Chemical vapor deposition system and method employing a mass flow controller | |
JP3305817B2 (ja) | 半導体製造装置及びウェーハ処理方法 | |
KR100346602B1 (ko) | 로드 락 챔버의 반응성 가스 배출장치 및 배출방법 | |
KR970003595Y1 (ko) | 역류방지장치가 구비된 플라즈마 화학기상증착장비 | |
KR100266681B1 (ko) | 반도체 웨이퍼 제조용 식각장비의 세정장치 | |
KR0137968Y1 (ko) | 상압 화학기상증착 장비의 반응로 내부압력 조절장치 | |
KR0122609Y1 (ko) | 반도체 제조용 로드락챔버의 대기압일치장치 | |
KR20010107138A (ko) | 화학 기상 증착 장비 | |
KR200165747Y1 (ko) | 반도체소자 제조를 위한 저압화학기상증착 프로세스용 공정가스 퍼지 시스템 | |
KR20060134465A (ko) | 저압 화학기상 증착설비의 배기장치 | |
KR200174032Y1 (ko) | 반도체 제조용 저압화학 기상증착장치 | |
KR910000274B1 (ko) | 다결정실리콘용 저압화학 증착장치의 가스공급계 | |
KR200191155Y1 (ko) | 반도체 기판의 열처리 장치 | |
KR20010045943A (ko) | 저압 화학 기상 증착용 반응로의 잔류 가스 배기 장치 | |
KR20000022566A (ko) | 반도체 제조설비의 배기장치 | |
KR19990012451U (ko) | 웨이퍼 증착장치의 자동압력조절시스템 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19951205 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19951205 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980828 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19980924 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 19980924 End annual number: 3 Start annual number: 1 |
|
PG1601 | Publication of registration | ||
PR1001 | Payment of annual fee |
Payment date: 20010817 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 20020820 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 20030814 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 20040820 Start annual number: 7 End annual number: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 20050822 Start annual number: 8 End annual number: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20060818 Start annual number: 9 End annual number: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20070827 Start annual number: 10 End annual number: 10 |
|
PR1001 | Payment of annual fee |
Payment date: 20080820 Start annual number: 11 End annual number: 11 |
|
FPAY | Annual fee payment |
Payment date: 20090828 Year of fee payment: 12 |
|
PR1001 | Payment of annual fee |
Payment date: 20090828 Start annual number: 12 End annual number: 12 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20110810 |