KR0165542B1 - 스위칭 장치 - Google Patents
스위칭 장치 Download PDFInfo
- Publication number
- KR0165542B1 KR0165542B1 KR1019900018933A KR900018933A KR0165542B1 KR 0165542 B1 KR0165542 B1 KR 0165542B1 KR 1019900018933 A KR1019900018933 A KR 1019900018933A KR 900018933 A KR900018933 A KR 900018933A KR 0165542 B1 KR0165542 B1 KR 0165542B1
- Authority
- KR
- South Korea
- Prior art keywords
- switch
- bias
- current
- diode
- amplifier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
- H03K17/76—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (5)
- 스위칭 장치로서, 신호 입력 단자(10)와 신호 출력 단자(12)사이에 지정된 순서로 직렬 접속된 제1 및 제2스위치(14,30)와, 상기 제2스위치의 전도 상태에 따라 상기 제1스위치를 제어하기 위해 상기 스위치에 결합된 바이어스 네트워크를 구비하며, 상기 제1스위치(14)는 상기 신호 입력 단자(10)와 상기 제2스위치(30) 입력 사이에 결합된 제1저항(16)을 포함하는 직렬 브랜치와 상기 제2스위치 입력과 기준 전위 소스 사이에 결합된 제너 다이오드(22)를 포함하는 션트 브랜치를 가지는 감쇠기를 구비하며, 상기 바이어스 네트워크는 상기 제2스위치가 개방상태일때 그곳에서 소정의 턴-온 전류를 공급하기 위해 제너 다이오드에 연결된 전류원(24)을 구비하며, 상기 바이어스 네트워크는 상기 제2스위치가 클로우즈 상태일때 제너 다이오드로부터 소정의 전류를 제너 다이오드에 전환시키기 위한 제2스위치의 출력에 연결된 부하 저항(32)을 구비하는 것을 특징으로 하는 스위칭 장치.
- 제1항에 있어서, 상기 제1저항(16)을 통해 소정의 턴-온 전류가 흐르는 것을 방지위해 상기 직렬 브랜치에 직렬 연결된 직류 전류 브로킹 장치(18)를 더 구비하는 것을 특징으로 하는 스위칭 장치.
- 제1항에 있어서, 상기 신호 출력 단자에 결합된 증폭기(570) D.C.를 구비하며, 상기 전류원(24) 및 부하 저항(32)은 상기 제2스위치가 클로우즈 상태일때 상기 증폭기에 대해 주어진 정지 DC 동작 점을 설정하기 위해 상기 출력 단자에서 소정의 DC 성분의 출력 전압을 제공하기 위해 선택되는것을 특징으로 하는 스위칭 장치.
- 제1항에 있어서, 상기 신호 출력 단자에 연결된 증폭기(570) DC 와, 제2스위치가 상기 증폭기 바이어싱을 위해 클로우즈 될때 상기 전류원과 상기 부하 저항이 DC 성분의 출력 전압을 발생하도록 상기 증폭기의 공급 입력단자와 상기 전류원의 공급 입력 단자(574)에 결합된 공급 전압원(530)을 구비하는 것을 특징으로 하는 스위칭 장치.
- 제1항에 있어서, 상기 전류원에 의해 제공된 소정의 턴 온 전류는 상기 제2스위치가 개방상태일때 상기 브레이크 다운 장치를 위한 소정의 임피던스를 제공하기 위해 선택되며, 상기 소정의 임피던스는 상기 션트 브랜치의 제1임피던스의 임피던스 보다 실질적으로 작은 것을 특징으로 하는 스위칭 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US441,901 | 1989-11-28 | ||
US07/441,901 US5045733A (en) | 1989-11-28 | 1989-11-28 | Switching apparatus with cascaded switch sections |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910010861A KR910010861A (ko) | 1991-06-29 |
KR0165542B1 true KR0165542B1 (ko) | 1999-03-20 |
Family
ID=23754750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900018933A KR0165542B1 (ko) | 1989-11-28 | 1990-11-22 | 스위칭 장치 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5045733A (ko) |
EP (1) | EP0430063B1 (ko) |
JP (1) | JP2724912B2 (ko) |
KR (1) | KR0165542B1 (ko) |
CN (1) | CN1027118C (ko) |
CA (1) | CA2027979C (ko) |
DE (1) | DE69026344T2 (ko) |
FI (1) | FI100284B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6225865B1 (en) | 1996-03-07 | 2001-05-01 | Thomson Licensing S.A. | Signal switching arrangement |
US7123729B2 (en) * | 2001-10-09 | 2006-10-17 | Thomson Licensing | Dual use of an integrated circuit pin and the switching of signals at said pin |
DE10301693B4 (de) * | 2003-01-17 | 2006-08-24 | Infineon Technologies Ag | MOSFET-Schaltung mit reduzierten Ausgangsspannungs-Schwingungen bei einem Abschaltvorgang |
US20050035795A1 (en) * | 2003-07-08 | 2005-02-17 | Liu Chi Fai | Circuit for optimizing zener diode bias current |
US7193828B2 (en) * | 2003-09-11 | 2007-03-20 | Visteon Global Technologies, Inc. | Video protection circuit providing short to battery protection while maintaining termination impedance |
US8929690B2 (en) | 2011-08-31 | 2015-01-06 | Timothy J. Doering | Multiple discharge device panel fiber optic fuse state indicator |
US8593790B2 (en) * | 2011-08-31 | 2013-11-26 | Randall J. Appleton | Multiple discharge device cascading switch and fuse design |
TW201813284A (zh) * | 2016-08-16 | 2018-04-01 | 美商天工方案公司 | 數位切換衰減器 |
US11929741B2 (en) * | 2018-05-30 | 2024-03-12 | Search For The Next Ltd | Circuit and device including a transistor and diode |
CN110098811A (zh) * | 2019-04-11 | 2019-08-06 | 深圳市华星光电技术有限公司 | 一种运算放大器和显示装置 |
GB201915954D0 (en) * | 2019-11-01 | 2019-12-18 | Search For The Next | Improvements to a circuit and device including a transistor and diode |
US11075661B1 (en) * | 2020-03-03 | 2021-07-27 | Psemi Corporation | Method and apparatus to optimize power clamping |
CN115309218B (zh) * | 2021-05-07 | 2024-11-22 | 浙江驰拓科技有限公司 | 一种电流基准电路和电源系统 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3124761A (en) * | 1964-03-10 | Circuit | ||
US3243604A (en) * | 1963-06-10 | 1966-03-29 | Barnes Enginweering Company | Clamp-limit network for providing a limited output signal which is not affected by noise |
US3515995A (en) * | 1967-09-11 | 1970-06-02 | Sperry Rand Corp | Radiation hardened clock pulse distributor |
US3529179A (en) * | 1967-11-01 | 1970-09-15 | Us Army | Logic noise suppressor |
US3582680A (en) * | 1968-12-05 | 1971-06-01 | Bendix Corp | Variable impedance circuit |
US3603818A (en) * | 1969-06-17 | 1971-09-07 | Bell Telephone Labor Inc | Gunn-diode logic circuits |
DE2122967C3 (de) * | 1971-05-10 | 1975-10-09 | Carl Schenck Ag, 6100 Darmstadt | Verfahren und Einrichtung zum Erzeugen und Weitergeben elektrischer Bezugsimpulse |
CA963581A (en) * | 1972-12-22 | 1975-02-25 | Gyles Panther | Memory cell array |
US3859609A (en) * | 1973-07-23 | 1975-01-07 | Texas Instruments Inc | Absorptive pin attenuators |
JPS5421234A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Input circuit |
US4243947A (en) * | 1979-03-28 | 1981-01-06 | General Motors Corporation | Radio frequency amplifier with gain control |
US4405903A (en) * | 1981-03-27 | 1983-09-20 | Gte Automatic Electric Incorporated | Variolosser for an automatic gain control circuit |
DE3210452A1 (de) * | 1982-03-22 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Signal-eingangsschaltung |
DE3210453C2 (de) * | 1982-03-22 | 1995-05-04 | Telefunken Microelectron | Signal-Eingangsschaltung |
US4521810A (en) * | 1983-05-03 | 1985-06-04 | Rca Corporation | Video source selector |
US4638181A (en) * | 1984-11-29 | 1987-01-20 | Rca Corporation | Signal source selector |
JPS61234118A (ja) * | 1985-04-09 | 1986-10-18 | Mitsubishi Electric Corp | 波形整形回路 |
JPS63169816A (ja) * | 1987-01-07 | 1988-07-13 | Nec Corp | 電圧比較回路 |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
-
1989
- 1989-11-28 US US07/441,901 patent/US5045733A/en not_active Expired - Lifetime
-
1990
- 1990-10-18 CA CA002027979A patent/CA2027979C/en not_active Expired - Fee Related
- 1990-11-21 FI FI905747A patent/FI100284B/fi not_active IP Right Cessation
- 1990-11-22 EP EP90122287A patent/EP0430063B1/en not_active Expired - Lifetime
- 1990-11-22 KR KR1019900018933A patent/KR0165542B1/ko not_active IP Right Cessation
- 1990-11-22 DE DE69026344T patent/DE69026344T2/de not_active Expired - Lifetime
- 1990-11-27 CN CN90109439A patent/CN1027118C/zh not_active Expired - Lifetime
- 1990-11-27 JP JP2321355A patent/JP2724912B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69026344T2 (de) | 1996-09-26 |
CA2027979C (en) | 2001-08-28 |
US5045733A (en) | 1991-09-03 |
JPH03178216A (ja) | 1991-08-02 |
KR910010861A (ko) | 1991-06-29 |
EP0430063A2 (en) | 1991-06-05 |
EP0430063B1 (en) | 1996-04-03 |
CN1052232A (zh) | 1991-06-12 |
FI100284B (fi) | 1997-10-31 |
DE69026344D1 (de) | 1996-05-09 |
FI905747A (fi) | 1991-05-29 |
JP2724912B2 (ja) | 1998-03-09 |
CN1027118C (zh) | 1994-12-21 |
EP0430063A3 (en) | 1992-02-12 |
FI905747A0 (fi) | 1990-11-21 |
CA2027979A1 (en) | 1991-05-29 |
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