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KR0164654B1 - 배선구조 및 액정소자 - Google Patents

배선구조 및 액정소자 Download PDF

Info

Publication number
KR0164654B1
KR0164654B1 KR1019950049546A KR19950049546A KR0164654B1 KR 0164654 B1 KR0164654 B1 KR 0164654B1 KR 1019950049546 A KR1019950049546 A KR 1019950049546A KR 19950049546 A KR19950049546 A KR 19950049546A KR 0164654 B1 KR0164654 B1 KR 0164654B1
Authority
KR
South Korea
Prior art keywords
liquid crystal
enthalpy
conductive member
wiring structure
standard
Prior art date
Application number
KR1019950049546A
Other languages
English (en)
Korean (ko)
Other versions
KR960026902A (ko
Inventor
히로유끼 헤비구찌
겐지 야마모또
Original Assignee
아베 아끼라
가부시키 가이샤 프론테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아베 아끼라, 가부시키 가이샤 프론테크 filed Critical 아베 아끼라
Publication of KR960026902A publication Critical patent/KR960026902A/ko
Application granted granted Critical
Publication of KR0164654B1 publication Critical patent/KR0164654B1/ko

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/13439Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • G02F1/13629Multilayer wirings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019950049546A 1994-12-15 1995-12-14 배선구조 및 액정소자 KR0164654B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6312220A JPH08167608A (ja) 1994-12-15 1994-12-15 配線構造および液晶素子
JP94-312220 1994-12-15

Publications (2)

Publication Number Publication Date
KR960026902A KR960026902A (ko) 1996-07-22
KR0164654B1 true KR0164654B1 (ko) 1999-02-01

Family

ID=18026640

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950049546A KR0164654B1 (ko) 1994-12-15 1995-12-14 배선구조 및 액정소자

Country Status (3)

Country Link
JP (1) JPH08167608A (ja)
KR (1) KR0164654B1 (ja)
DE (1) DE19546962A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619254B2 (en) 2004-11-17 2009-11-17 Samsung Electronics Co., Ltd. Thin film transistor array panel including layered line structure and method for manufacturing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19733053A1 (de) * 1997-07-31 1999-02-04 Leybold Ag Transparentes Substrat
JP6173246B2 (ja) * 2014-03-27 2017-08-02 三菱電機株式会社 薄膜トランジスタおよびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2218301A1 (en) * 1973-02-16 1974-09-13 Saint Gobain Semi-reflecting glaze with semi-conductor layer - of pref tin oxide, indium oxide or titanium nitride applied on film of gold, silver or copper
DE2750500A1 (de) * 1977-11-11 1979-05-17 Leybold Heraeus Gmbh & Co Kg Verfahren zur herstellung von infrarotreflektierenden, fuer sichtbares licht weitgehend transparenten scheiben und durch die verfahren hergestellte scheibe
DE3536821A1 (de) * 1985-10-16 1987-04-16 Standard Elektrik Lorenz Ag Verfahren zur herstellung einer stromlos abgeschiedenen, loetbaren metallschicht
JPH0620153B2 (ja) * 1987-12-25 1994-03-16 鐘淵化学工業株式会社 光起電力素子
JP2756841B2 (ja) * 1989-10-13 1998-05-25 株式会社日立製作所 表示装置
JPH04153623A (ja) * 1990-10-18 1992-05-27 Fuji Xerox Co Ltd 配線構造

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619254B2 (en) 2004-11-17 2009-11-17 Samsung Electronics Co., Ltd. Thin film transistor array panel including layered line structure and method for manufacturing the same
US8372701B2 (en) 2004-11-17 2013-02-12 Samsung Display Co., Ltd. Thin film transistor array panel including layered line structure and method for manufacturing the same
US8637869B2 (en) 2004-11-17 2014-01-28 Samsung Display Co., Ltd. Thin film transistor array panel including layered line structure and method for manufacturing the same
US9111802B2 (en) 2004-11-17 2015-08-18 Samsung Display Co., Ltd. Thin film transistor array panel including layered line structure and method for manufacturing the same
US9431426B2 (en) 2004-11-17 2016-08-30 Samsung Display Co., Ltd. Thin film transistor array panel including layered line structure and method for manufacturing the same

Also Published As

Publication number Publication date
DE19546962A1 (de) 1996-06-20
JPH08167608A (ja) 1996-06-25
KR960026902A (ko) 1996-07-22

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