KR0163899B1 - Liquid crystal display device and its manufacturing method - Google Patents
Liquid crystal display device and its manufacturing method Download PDFInfo
- Publication number
- KR0163899B1 KR0163899B1 KR1019950014248A KR19950014248A KR0163899B1 KR 0163899 B1 KR0163899 B1 KR 0163899B1 KR 1019950014248 A KR1019950014248 A KR 1019950014248A KR 19950014248 A KR19950014248 A KR 19950014248A KR 0163899 B1 KR0163899 B1 KR 0163899B1
- Authority
- KR
- South Korea
- Prior art keywords
- data line
- gate
- liquid crystal
- crystal display
- amorphous silicon
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
본 발명은 액정 표시 장치 및 그 제조 방법에 관한 것으로서 특히, 데이타 라인과 게이트 캐패시턴스 링이 겹치도록 형성하고, 아몰퍼스 실리콘을 데이타 라인 하부에 형성하여 광 산란에 의한 누설 전류를 감소시키기 위하여, 화소부와, 데이타 라인과, 게이트 라인과 게이트 캐패시턴스 링을 포함하는 게이트 라인 배선과, 상기 데이타 라인과 상기 게이트 라인의 교차부에 형성되어 있는 스위칭 소자를 포함하는 하부 기판과; 칼라 필터와, 블랙 매트릭스와, 공통 전극을 포함하는 상부 기판과; 상기 하부 기판과 상기 상부 기판 사이에 채워져 있는 액정으로 이루어진 액정 표시 장치에 있어서, 상기 데이타 라인은 상기 캐패시턴스 링과 겹치도록 형성하고, 상기 데이타 라인의 하부에는 아몰퍼스 실리콘층을 형성하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display and a method of manufacturing the same. In particular, in order to reduce the leakage current due to light scattering by forming a data line and a gate capacitance ring to overlap and forming amorphous silicon under the data line, A lower substrate including a data line, a gate line wiring including a gate line and a gate capacitance ring, and a switching element formed at an intersection of the data line and the gate line; An upper substrate comprising a color filter, a black matrix and a common electrode; A liquid crystal display device comprising a liquid crystal filled between the lower substrate and the upper substrate, wherein the data line is formed to overlap the capacitance ring, and an amorphous silicon layer is formed below the data line.
Description
제1도는 액정 표시 장치의 종래의 데이타 라인을 보인 저면도이고,1 is a bottom view showing a conventional data line of a liquid crystal display device,
제1a도는 상기 제1도의 A-A′의 부분 확대도이고,FIG. 1a is a partial enlarged view of A-A 'of FIG. 1,
제2도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인을 보인 저단면도이고,2 is a low cross-sectional view showing a data line according to an exemplary embodiment of the present invention of a liquid crystal display device.
제3도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인을 보인 저면도이고,3 is a bottom view illustrating a data line according to an exemplary embodiment of the present invention of a liquid crystal display device.
제3a도는 상기 제3도의 B-B′의 부분 확대도이고,3a is a partial enlarged view of B-B 'of FIG. 3;
제4a도-제4d도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인의 제조 공정의 순서를 나타낸 단면도이다.4A to 4D are cross-sectional views illustrating a procedure of manufacturing a data line according to an exemplary embodiment of the present invention of a liquid crystal display.
본 발명은 액정 표시 장치 그 제조 방법에 관한 것으로 특히, 데이타 라인과 게이트 캐패시턴스 링이 겹치도록 형성하고, 아몰퍼스 실리콘을 데이타 라인 하부에 형성하여 광 산란에 의한 누설 전류를 감소시키는 액정 표시 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a liquid crystal display device in which a data line and a gate capacitance ring overlap each other, and amorphous silicon is formed under the data line to reduce leakage current due to light scattering. .
프로젝션용(Projection Type) 박막트랜지스터 액정표시장치는 강한 백라이트에 의하여 광누설전류가 발생하므로 콘트래스트비를 감소시켜 화질의 불균일을 가져온다.In the projection type thin film transistor liquid crystal display device, since light leakage current is generated by a strong backlight, the contrast ratio is reduced, resulting in uneven image quality.
제1도는 종래의 게이트 메칼과 소스/드레인 메탈이 서로 분리된 상태로 되어 있는 데이타 라인을 보인 저면도이고,1 is a bottom view showing a data line in which a gate gate and a source / drain metal are separated from each other.
제1a도는 상기 제1도의 A-A′의 부분 확대도이다.FIG. 1A is a partially enlarged view of A-A 'of FIG. 1.
제1도 및 제1a도에 도시한 바와 같이, 종래의 데이타 라인(10)은 게이트 캐패시턴스 링(12)과 분리되도록 형성되어 있다.As shown in Figs. 1 and 1a, the conventional data line 10 is formed so as to be separated from the gate capacitance ring 12. Figs.
따라서, 게이트 캐패시턴스 링(12)과 데이타 라인(10) 사이로 빛이 산란 또는 굴절되어 콘트래스트비를 저하시킨다.Thus, light is scattered or refracted between the gate capacitance ring 12 and the data line 10 to lower the contrast ratio.
그러므로 백라이트에 의한 빛의 굴절 및 산란을 억제하기 위하여 제1도에 도시한 바와 같이 박막트랜지스터 기판에 블랙매트릭스(13)를 형성하는 방법이 제시되었으나 만족할 만한 결과를 가져오지 못하였다.Therefore, a method of forming the black matrix 13 on the thin film transistor substrate as shown in FIG. 1 has been proposed in order to suppress the refraction and scattering of light caused by the backlight, but has not been satisfactory.
그러므로 본 발명의 목적은 상기한 문제점을 해결하기 위한 것으로서, 데이타 라인과 게이트 캐패시턴스 링이 겹쳐지도록 형성하고, 아몰퍼스 실리콘을 데이타 라인 하부에 형성한 액정 표시 장치를 제공하기 위한 것이다.Accordingly, an object of the present invention is to provide a liquid crystal display device in which a data line and a gate capacitance ring overlap each other and an amorphous silicon is formed below the data line.
이러한 목적을 달성하기 위한 본 발명에 따른 액정 표시 장치는,The liquid crystal display device according to the present invention for achieving this object,
화소부와,The pixel section,
상기 화소부에 화상 정보 신호를 전달하는 데이타 라인과,A data line for transmitting image information signals to the pixel portion;
상기 화소부에 구동 신호를 전달하는 게이트 라인과 상기 화소부의 둘레에 형성되어 있는 게이트 캐패시턴스 링을 포함하는 게이트 라인 배선과,A gate line wiring including a gate line transmitting a driving signal to the pixel portion and a gate capacitance ring formed around the pixel portion;
상기 데이타 라인과 상기 게이트 라인의 교차부에 형성되어 있는 스위칭 소자를 포함하는 하부 기판과;A lower substrate including a switching element formed at an intersection of the data line and the gate line;
칼라 필터와,With a color filter,
블랙 매트릭스와,With the black matrix,
공통 전극을 포함하는 상부 기판과;An upper substrate including a common electrode;
상기 하부 기판과 상기 상부 기판 사이에 채워져 있는 액정으로 이루어진 액정 표시 장치에 있어서,A liquid crystal display device comprising a liquid crystal filled between the lower substrate and the upper substrate.
상기 데이타 라인은 상기 캐패시턴스 링과 겹치도록 형성되어 있으며, 상기 데이타 라인의 하부에는 아몰퍼스 실리콘층이 형성되어 있는 것을 특징으로 한다.The data line is formed to overlap the capacitance ring, and an amorphous silicon layer is formed under the data line.
이러한 목적을 달성하기 위한 본 발명에 따른 액정 표시 장치의 제조 방법은, 기판 위에 게이트 메탈을 적층한 후 게이트 전극 형성시 게이트 캐패시턴스 링을 형성하는 단계와,According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method including: forming a gate capacitance ring when a gate electrode is formed after laminating a gate metal on a substrate;
상기 게이트 캐패시턴스 링의 상부에 절연막을 형성하는 단계와,Forming an insulating film on the gate capacitance ring;
상기 절연막의 상부에 아몰퍼스 실리콘막을 형성하는 단계와,Forming an amorphous silicon film on the insulating film;
상기 아몰퍼스 실리콘막의 상부에 소스/드레인 메탈을 상기 게이트 캐패시턴스 링과 오버랩되게 형성하는 단계를 포함하는 것을 특징으로 한다.And forming a source / drain metal on the amorphous silicon film so as to overlap the gate capacitance ring.
그러면, 첨부한 도면을 참고로 하여 본 발명에 따른 액정 표시 장치 및 그 제조 방법의 실시예를 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있을 정도로 상세히 설명한다.Next, exemplary embodiments of the liquid crystal display and the manufacturing method thereof according to the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.
제2도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인의 단면도이고,2 is a cross-sectional view of a data line according to an exemplary embodiment of the present invention of a liquid crystal display device.
제3도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인을 보인 저면도이고,3 is a bottom view illustrating a data line according to an exemplary embodiment of the present invention of a liquid crystal display device.
제3-1도는 상기 제3도의 B-B′의 부분 확대도이고,3-1 is a partially enlarged view of B-B 'of FIG. 3,
제4a도-제4d도는 액정 표시 장치의 본 발명의 실시예에 따른 데이타 라인의 제조 공정 순서를 나타낸 단면도이다.4A to 4D are cross-sectional views illustrating a manufacturing process sequence of a data line according to an exemplary embodiment of the present invention of a liquid crystal display.
제2도, 제3도 그리고 제3-1도를 참고로 하여, 본 발명의 실시예에 따른 액정 표시 장치를 설명하면 다음과 같다.A liquid crystal display according to an exemplary embodiment of the present invention will be described with reference to FIGS. 2, 3, and 3-1.
화소부(25)와,The pixel portion 25,
상기 화소부(25)에 화상 정보 신호를 전달하는 데이타 라인(26)과,A data line 26 for transmitting an image information signal to the pixel portion 25;
상기 화소부(25)에 구동 신호를 전달하는 게이트 라인(20)과 상기 화소부(25)의 둘레에 형성되어 있는 게이트 캐패시턴스 링(22)을 포함하는 게이트 라인 배선과,A gate line wiring including a gate line 20 transmitting a driving signal to the pixel portion 25 and a gate capacitance ring 22 formed around the pixel portion 25;
상기 데이타 라인(26)과 상기 게이트 라인(20)의 교차부에 형성되어 있는 스위칭 소자인 박막 트랜지스터를 포함하는 하부 기판과;A lower substrate including a thin film transistor that is a switching element formed at an intersection of the data line 26 and the gate line 20;
칼라 필터(31)와,With a color filter 31,
블랙 매트릭스(30)와,Black matrix 30,
공통 전극(32)을 포함하는 상부 기판과;An upper substrate including a common electrode 32;
상기 하부 기판과 상기 상부 기판 사이에 채워져 있는 액정(40)으로 이루어진 액정 표시 장치에 있어서,In the liquid crystal display device comprising a liquid crystal 40 filled between the lower substrate and the upper substrate,
상기 데이타 라인(26)은 상기 캐패시턴스 링(22)과 겹치도록 형성되어 있으며, 상기 데이타 라인(26)의 하부에는 아몰퍼스 실리콘층(24)이 형성되어 있다.The data line 26 is formed to overlap the capacitance ring 22, and an amorphous silicon layer 24 is formed below the data line 26.
따라서, 데이타 라인(26)이 게이트 캐패시턴스 링(22)과 오버랩되게 형성되어 있어 광 산란에 의한 누설 전류를 줄일 수 있으며, 하부에 아몰퍼스 실리콘층(24)이 형성되어 있어 데이타 라인의 오픈을 방지할 수 있다.Therefore, since the data line 26 is formed to overlap the gate capacitance ring 22, leakage current due to light scattering can be reduced, and an amorphous silicon layer 24 is formed below to prevent the data line from being opened. Can be.
제3-1도 및 제4도를 참고로하여, 본 발명의 한 실시예에 따른 액정 표시 장치의 제조 방법을 설명하면 다음과 같다.Referring to FIGS. 3-1 and 4, a method of manufacturing a liquid crystal display according to an exemplary embodiment of the present invention will be described below.
먼저, 제3-1도 및 제4a도에 도시한 바와 같이, 가판(21) 위에 게이트 메탈을 적층한 후 게이트 전극 패턴 형성시 게이트 캐패시턴스 링(22)을 형성한다.First, as shown in FIGS. 3-1 and 4A, the gate metal layer 22 is formed on the substrate 21 after the gate metal is stacked, and the gate capacitance ring 22 is formed when the gate electrode pattern is formed.
다음, 제4b도에 도시한 바와 같이, 상기 게이트 캐패시턴스 링(22)의 상부에 절연막(23)을 형성한다.Next, as shown in FIG. 4B, an insulating film 23 is formed on the gate capacitance ring 22.
다음, 제4c도에 도시한 바와 같이 상기 절연막(23)의 상부에 아몰퍼스 실리콘막(24)을 형성한다.Next, as shown in FIG. 4C, an amorphous silicon film 24 is formed on the insulating film 23.
다음, 제3-1도 및 제4d도에 도시한 바와 같이 상기 아몰퍼스 실리콘막(24)의 상부에 소스/드레인 메탈(26)을 상기 게이트 캐패시턴스 링(22)과 오버랩되게 형성한다.Next, as shown in FIGS. 3-1 and 4D, a source / drain metal 26 is formed on the amorphous silicon film 24 so as to overlap the gate capacitance ring 22.
이때, 상기 게이트 캐패시턴스 링(22)은 크롬, 알루미늄, 탄탈륨 중 어느 하나를 사용한다. 또한 상기 아몰퍼스 실리콘막(24)의 두께는 1500Å 이상으로 한다. 한편, 제3-1도에 도시한 바같이, 상기 데이타 라인의 상부에는 액정 표시 장치의 상판의 블랙 매트릭스(30)가 위치하게 된다.In this case, the gate capacitance ring 22 uses any one of chromium, aluminum, and tantalum. In addition, the thickness of the amorphous silicon film 24 is 1500 kPa or more. Meanwhile, as shown in FIG. 3-1, the black matrix 30 of the upper panel of the liquid crystal display is positioned above the data line.
따라서, 본 발명에 따른 액정 표시 장치는 데이타 라인과 게이트 캐패시턴스 링이 겹치도록 형성되어 있고, 아몰퍼스 실리콘이 데이타 라인 하부에 형성되어 있어 광 산란에 의한 누설 전류를 감소시키는 효과가 있다.Therefore, the liquid crystal display according to the present invention is formed so that the data line and the gate capacitance ring overlap, and amorphous silicon is formed below the data line, thereby reducing the leakage current due to light scattering.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950014248A KR0163899B1 (en) | 1995-05-31 | 1995-05-31 | Liquid crystal display device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950014248A KR0163899B1 (en) | 1995-05-31 | 1995-05-31 | Liquid crystal display device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960042170A KR960042170A (en) | 1996-12-21 |
| KR0163899B1 true KR0163899B1 (en) | 1999-01-15 |
Family
ID=19416155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950014248A KR0163899B1 (en) | 1995-05-31 | 1995-05-31 | Liquid crystal display device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0163899B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100552298B1 (en) * | 1998-09-24 | 2006-06-07 | 삼성전자주식회사 | Liquid crystal display device and substrate manufacturing method for liquid crystal display device |
-
1995
- 1995-05-31 KR KR1019950014248A patent/KR0163899B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR960042170A (en) | 1996-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5965916A (en) | Thin-film transistor structure for liquid crystal display having black matrixes connected to a gate line | |
| KR100291228B1 (en) | A liquid-crystal panel | |
| US6262783B1 (en) | Liquid crystal display device with reflective electrodes and method for fabricating the same | |
| KR100426980B1 (en) | Electro-optical device, method for fabricating the same, and electronic apparatus | |
| US5910829A (en) | Liquid crystal display device | |
| US5760861A (en) | Liquid crystal display device and a method for fabricating black matrix thereto | |
| JPH09105952A (en) | Active matrix type liquid crystal display device | |
| JPH1020298A (en) | Liquid crystal display device | |
| US20040021816A1 (en) | Reflective liquid crystal display device and fabricating method thereof | |
| JP2741769B2 (en) | Liquid crystal display | |
| US6999060B2 (en) | Liquid crystal display and fabricating method thereof | |
| JPH06130418A (en) | Active matrix substrate | |
| EP0827010B1 (en) | In-plane type liquid crystal display apparatus with increased numerical aperture | |
| US7321406B2 (en) | Liquid crystal display device and method of fabricating the same | |
| US6850297B2 (en) | Substrate assembly for electrooptical device, method for manufacturing substrate assembly for electrooptical device, electrooptical device, method for manufacturing electrooptical device, and electronic apparatus | |
| KR0163899B1 (en) | Liquid crystal display device and its manufacturing method | |
| KR100672626B1 (en) | Liquid crystal panel and its manufacturing method | |
| KR100975461B1 (en) | Liquid crystal display | |
| JPH06222390A (en) | Liquid crystal display device | |
| KR19980063692A (en) | LCD and its manufacturing method | |
| KR100381864B1 (en) | Reflective liquid crystal display device and its manufacturing method | |
| JP2000122089A (en) | Liquid crystal display device | |
| JPH09325360A (en) | Liquid crystal display device | |
| KR20020076449A (en) | an array panel for liquid crystal display and manufacturing method thereof | |
| JP2000171825A (en) | Liquid crystal display device and its manufacture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19950531 |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19950531 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19980515 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19980826 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19980909 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 19980909 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration | ||
| PR1001 | Payment of annual fee |
Payment date: 20010807 Start annual number: 4 End annual number: 4 |
|
| PR1001 | Payment of annual fee |
Payment date: 20020807 Start annual number: 5 End annual number: 5 |
|
| PR1001 | Payment of annual fee |
Payment date: 20030808 Start annual number: 6 End annual number: 6 |
|
| PR1001 | Payment of annual fee |
Payment date: 20040809 Start annual number: 7 End annual number: 7 |
|
| PR1001 | Payment of annual fee |
Payment date: 20050802 Start annual number: 8 End annual number: 8 |
|
| PR1001 | Payment of annual fee |
Payment date: 20060830 Start annual number: 9 End annual number: 9 |
|
| FPAY | Annual fee payment |
Payment date: 20070827 Year of fee payment: 10 |
|
| PR1001 | Payment of annual fee |
Payment date: 20070827 Start annual number: 10 End annual number: 10 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
Termination category: Default of registration fee Termination date: 20090810 |