KR0151082B1 - Wafer putting method for ion implant - Google Patents
Wafer putting method for ion implant Download PDFInfo
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- KR0151082B1 KR0151082B1 KR1019950031662A KR19950031662A KR0151082B1 KR 0151082 B1 KR0151082 B1 KR 0151082B1 KR 1019950031662 A KR1019950031662 A KR 1019950031662A KR 19950031662 A KR19950031662 A KR 19950031662A KR 0151082 B1 KR0151082 B1 KR 0151082B1
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- wafer
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- wafers
- ion implantation
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000007943 implant Substances 0.000 title 1
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 235000012431 wafers Nutrition 0.000 abstract description 83
- 150000002500 ions Chemical class 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
본 발명은 이온 주입을 위한 웨이퍼 장착 방법에 관해 게시한다. 본 발명에 따라 웨이퍼를 디스크에 장착할 때 디스크의 중앙에서 웨이퍼를 가로지르는 선을 세로축이라 하면 이 세로축과 직교하는 가로축과 웨이퍼의 플랫존이 이루는 각도가 45˚보다 더 크게 함으로 웨이퍼의 수율을 향상시키고, 또한 이온 주입이 완료되어 디스크로부터 오리엔트부로 옮겨지는 웨이퍼들은 안정한 상태로 놓여져 웨이퍼들을 카세트로 되옮기는 과정에서 웨이퍼가 손상되거나 또는 드래깅(dragging)에 의한 웨이퍼의 깨어짐을 방지할 수 있다.The present invention discloses a wafer mounting method for ion implantation. When the wafer is mounted on the disk according to the present invention, if the line crossing the wafer at the center of the disk is the vertical axis, the angle between the horizontal axis orthogonal to the vertical axis and the flat zone of the wafer is greater than 45 ° to improve the yield of the wafer. In addition, the wafers that are ion implanted and transferred from the disk to the orient portion may be placed in a stable state to prevent the wafer from being damaged or broken by dragging during the process of transferring the wafers to the cassette.
Description
제1도는 웨이퍼가 장착된 디스크의 개략도이다.1 is a schematic diagram of a disk on which a wafer is mounted.
제2도는 종래 기술에 의해 디스크에 장착된 하나의 웨이퍼를 도시한 평면도이다.2 is a plan view showing one wafer mounted on a disk by the prior art.
제3도는 상기 제2도의 웨이퍼를 카세트에 장착한 상태를 도시한 평면도이다.3 is a plan view showing a state in which the wafer of FIG. 2 is mounted in a cassette.
제4도는 상기 제3도에 도시한 웨이퍼의 단면도이다.4 is a cross-sectional view of the wafer shown in FIG.
제5도는 본 발명에 의해 디스크에 장착된 하나의 웨이퍼를 도시한 평면도이다.5 is a plan view showing one wafer mounted on a disk according to the present invention.
제6도는 상기 제5도의 웨이퍼를 카세트에 장착한 상태를 도시한 평면도이다.FIG. 6 is a plan view showing a state in which the wafer of FIG. 5 is mounted in a cassette. FIG.
제7도는 상기 제6도에 도시한 웨이퍼의 단면도이다.FIG. 7 is a cross-sectional view of the wafer shown in FIG.
본 발명은 이온을 주입하기 위해 디스크에 웨이퍼를 장착하는 방법에 관한 것으로서, 특히 웨이퍼의 각도를 조정함으로서 웨이퍼의 수율을 향상시킬 수 있는 웨이퍼 장착 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of mounting a wafer on a disk for implanting ions, and more particularly, to a wafer mounting method capable of improving wafer yield by adjusting the angle of the wafer.
웨이퍼에 이온을 주입하는 기술은 반도체 기판의 실리콘 내에 불순물을 도입하기 위한 기본적인 공정 기술이다. 그런데 반도체 장치가 고집적화·고밀도화 됨에 따라 웨이퍼에 이온을 주입하는 방법도 여러 가지가 개발되었고 그에 따라 이온 주입 장치도 많이 개발되었다.The technique of implanting ions into a wafer is a basic process technique for introducing impurities into silicon of a semiconductor substrate. However, as semiconductor devices have been highly integrated and densified, various methods for implanting ions into wafers have been developed. Accordingly, many ion implantation devices have been developed.
기본적으로 웨이퍼에 이온을 주입하기 위해서는 먼저 카세트(casette)에서 웨이퍼를 인출하여 오리엔트(orient)부로 이동시킨다. 오리엔트부에서는 웨이퍼를 회전시킨 다음, 로봇 팔(robot arm)을 사용하여 디스크에 장착시킨다. 상기 디스크를 이온 주입 장치안에 설치한 후 이온 주입 장치를 작동하면 이온의 종류·주입량·주입력을 조절하여 원하는 대로 웨이퍼에 이온을 주입할 수 있다.Basically, in order to inject ions into the wafer, the wafer is first taken out of a cassette and moved to an orient part. In the orient part, the wafer is rotated and then mounted on a disk using a robot arm. After the disk is installed in the ion implantation apparatus, the ion implantation apparatus is operated to inject ions into the wafer as desired by adjusting the type, implantation amount, and main input of the ions.
이온 주입이 완료된 다음, 상기 디스크를 이온 주입 장치로부터 인출하여 디스크상의 웨이퍼를 로봇 팔을 사용하여 오리엔트부로 이동시킨다. 오리엔트부에서는 다시 카세트로 이동시킨다. 그런데 상기 디스크에 웨이퍼를 장착할 때 웨이퍼를 장착하는 각도에 따라 웨이퍼의 수율이 달라지고 웨이퍼의 손상여부가 결정된다. 다음은 종래 기술에 의한 웨이퍼 장착 방법을 설명한다.After the ion implantation is completed, the disk is withdrawn from the ion implantation apparatus and the wafer on the disk is moved to the orient portion using the robot arm. The orient unit moves it back to the cassette. However, when the wafer is mounted on the disk, the yield of the wafer varies according to the mounting angle of the wafer, and the damage of the wafer is determined. Next, a wafer mounting method according to the prior art will be described.
제1도는 웨이퍼가 장착된 디스크의 개략도이다. 구체적으로 살펴보면, 여러 장의 웨이퍼(3)들이 둥근 원판 모양의 디스크(1)상에 똑같은 높이로 장착되어 있다. 각 웨이퍼(3)에는 웨이퍼(3)의 방향을 쉽게 구분하기 위해 플랫죤(flat zone)(5)이 형성되어 있다. 상기 디스크(1)의 중앙부분에는 중심축을 이루는 작은 원(7)이 있다. 상기 작은 원(7)을 중심으로 하여 웨이퍼(3)가 놓여진 부분까지 일직선을 긋고 이것을 세로축(9)이라고 하면 상기 세로축과 직각인 선은 가로축(11)이 된다.1 is a schematic diagram of a disk on which a wafer is mounted. Specifically, several wafers 3 are mounted at the same height on a round disk-shaped disk 1. Each wafer 3 is provided with a flat zone 5 to easily distinguish the direction of the wafer 3. At the center of the disk 1 there is a small circle 7 which forms a central axis. When a straight line is drawn to the portion where the wafer 3 is placed around the small circle 7 and is called the vertical axis 9, the line perpendicular to the vertical axis becomes the horizontal axis 11.
제2도 내지 제4도는 종래기술에 의한 웨이퍼 장착 방법을 도시한 도면들이다.2 to 4 are diagrams illustrating a wafer mounting method according to the prior art.
제2도는 상기 제1도에 도시한 디스크의 일부를 나타낸다. 구체적으로, 디스크(1)상에 하나의 웨이퍼(3)가 장착되어 있고 웨이퍼(3)의 플랫존(5)이 웨이퍼(3)를 가로지르는 세로축(9)과 직각인 가로축(11)과 이루는 각(13)이 45˚를 형성하고 있다.FIG. 2 shows a part of the disk shown in FIG. Specifically, one wafer 3 is mounted on the disk 1 and the flat zone 5 of the wafer 3 forms a horizontal axis 11 perpendicular to the vertical axis 9 across the wafer 3. Angle 13 forms 45 degrees.
제3도는 종래기술에 의해 카세트에 장착된 웨이퍼의 평면을 나타낸다. 웨이퍼(3)의 플랫존(5)이 카세트(21)의 좌측 측면 홈에까지 들어가 있음을 볼 수 있다.3 shows a plane of a wafer mounted in a cassette by the prior art. It can be seen that the flat zone 5 of the wafer 3 enters the left side groove of the cassette 21.
제4도는 종래기술에 의해 카세트에 장착된 웨이퍼의 단면을 나타낸다. 카세트(21)에 장착된 웨이퍼(3)들이 카세트(21)의 흠에 비스듬히 장착되어 있는 것을 볼 수 있다.4 shows a cross section of a wafer mounted in a cassette by the prior art. It can be seen that the wafers 3 mounted on the cassette 21 are mounted obliquely on the groove of the cassette 21.
상기 설명한 바와 같이, 웨이퍼의 플랫존이 가로축과 45˚가 되도록 웨이퍼를 디스크에 장착하는 종래의 방법은 다음과 같은 문제점을 갖고 있다.As described above, the conventional method of mounting the wafer on the disk such that the flat zone of the wafer is 45 ° with the horizontal axis has the following problems.
첫째, 이온 주입시 불안정한 균일성으로 인해 웨이퍼의 수율을 저하시킨다.First, the yield of the wafer is lowered due to unstable uniformity during ion implantation.
둘째, 이온 주입시 완료되어 디스크로부터 오리엔트부로 옮겨지는 웨이퍼들은 불안정한 상태로 놓여진다. 이렇게 불안정한 상태의 웨이퍼들을 카세트로 되옮기는 과정에서 웨이퍼가 손상을 입거나 또는 드래깅(draggig)에 의한 웨이퍼의 깨어짐이 발생하기가 쉽다.Second, wafers that are completed during ion implantation and are transferred from the disk to the orient portion are placed in an unstable state. In the process of transferring the wafers in the unstable state to the cassette, the wafers are easily damaged or the wafers are broken due to dragging.
따라서 본 발명의 목적은 이온 주입시 균일성을 향상시키고, 웨이퍼의 손상을 방지하기 위한 디스크의 웨이퍼 장착 방법을 제공하는 데 있다.Accordingly, an object of the present invention is to provide a wafer mounting method of a disk for improving uniformity during ion implantation and preventing damage to the wafer.
상기 목적을 달성하기 위하여 본 발명은, 웨이퍼에 이온을 주입하기 위해 사용하는 디스크에 웨이퍼를 장착하는 방법에 있어서, 상기 웨이퍼에 형성된 플랫존이 디스크의 중앙에서 웨이퍼를 가로지르는 세로축과 직각인 가로축과 이루는 각도를 45˚ 보다 더 크게 하는 웨이퍼 장착 방법을 제공한다.In order to achieve the above object, the present invention provides a method for mounting a wafer on a disk used for implanting ions into a wafer, wherein the flat zone formed on the wafer has a horizontal axis perpendicular to the vertical axis across the wafer at the center of the disk; Provided is a wafer mounting method that makes the angle to be greater than 45 °.
상기 플랫존이 가로축과 이루는 각도는 90˚를 초과하지는 않는다.The angle that the flat zone makes with the horizontal axis does not exceed 90 °.
상기 방법에 의해 이온 주입시 높은 균일성으로 인해 웨이퍼의 수율을 향상시키며, 이온 주입이 완료되고 웨이퍼들을 카세트로 되옮기는 과정에서 발생하는 웨이퍼의 손상을 방지할 수 있다.The method improves the yield of the wafer due to the high uniformity during ion implantation, and can prevent the damage of the wafer that occurs during the ion implantation and the transfer of the wafers to the cassette.
제5도 내지 제7도는 본 발명에 의한 웨이퍼 장착 방법을 도시한 도면들이다.5 to 7 are diagrams illustrating a wafer mounting method according to the present invention.
제5도는 본 발명에 의해 웨이퍼가 장착된 디스크로서 상기 제1도에 도시한 디스크의 일부를 나타낸다. 구체적으로 보면, 디스크(51)상에 하나의 웨이퍼(53)를 장착하고 상기 웨이퍼(53)의 플랫존(55)이 웨이퍼(53)를 가로지르는 세로축(59)과 직각인 가로축(61)과 이루는 각(63)이 45˚ 보다 더 크도록 웨이퍼(53)를 장착한다. 그러나 90˚를 초과하지는 않도록 한다.FIG. 5 shows a part of the disk shown in FIG. 1 as a disk on which a wafer is mounted in accordance with the present invention. Specifically, the horizontal axis 61 is mounted with one wafer 53 on the disk 51 and the flat zone 55 of the wafer 53 is perpendicular to the vertical axis 59 crossing the wafer 53. The wafer 53 is mounted such that the angle 63 formed is larger than 45 °. However, do not exceed 90˚.
제6도는 본 발명에 의해 카세트에 장착된 웨이퍼의 평면을 나타낸다. 웨이퍼(53)의 플랫존(55)이 카세트(71)의 좌측 측면 흠에까지 들어가 있지 않음을 볼 수 있다.6 shows a plane of a wafer mounted in a cassette by the present invention. It can be seen that the flat zone 55 of the wafer 53 does not enter the left side flaw of the cassette 71.
제7도는 본 발명에 의해 카세트에 장착된 웨이퍼의 단면을 나타낸다. 카세트(71)에 장착된 웨이퍼(53)들이 카세트(71)의 흠안에서 평평하게 장착되어 있는 것을 볼 수 있다. 웨이퍼(53)들이 평평하게 놓여져 있다는 것은 웨이퍼(53)들이 카세트(71)에 장착될 때 아무 저항도 받지 않는다는 것을 나타내며, 그것은 곧 웨이퍼(53)가 손상을 입거나 또는 드래깅(dragging)에 의한 깨어짐이 없다는 것을 알 수 있다.7 shows a cross section of a wafer mounted in a cassette in accordance with the present invention. It can be seen that the wafers 53 mounted on the cassette 71 are mounted flat in the gap of the cassette 71. Laying the wafers 53 flat indicates that the wafers 53 are not subjected to any resistance when mounted on the cassette 71, which means that the wafers 53 are damaged or broken by dragging. You can see that there is no.
본 발명에 의한 방법으로 이온 주입을 실시한 결과가 표 1과 표 2에 나타나 있다. 표 1은 이온 주입된 웨이퍼를 4가지 방법으로 측정한 값을 나타낸다. 여기서, CP(Peak Concentration)는 웨이퍼내에 주입된 이온의 집중도를 나타내고, RP(Projected Range)는 주입된 이온의 투과깊이를 나타낸다.The results of ion implantation by the method according to the invention are shown in Tables 1 and 2. Table 1 shows the measured values of the ion implanted wafer by four methods. Here, CP (Peak Concentration) represents the concentration of ions implanted in the wafer, and RP (Projected Range) represents the penetration depth of the implanted ions.
상기 표 1에 나타난 바와 같이, 본 발명에 따르면, 주입된 이온의 집중도가 높다. 따라서 본 발명에 의하면 균일성이 향상된다.As shown in Table 1, according to the present invention, the concentration of implanted ions is high. Therefore, according to the present invention, uniformity is improved.
표 2는 본 발명에 따른 방법으로 이온 주입한 웨이퍼를 테스트한 결과를 나타낸다. 빈(bin) 1은 웨이퍼의 전기적인 테스트에서 합격된 것 중에서 상위품질의 제품을, 빈 2는 웨이퍼의 전기적인 테스트에서 합격된 것 중에서 하위품질의 제품을 나타낸다.Table 2 shows the results of testing the wafers implanted with the method according to the invention. Bin 1 represents the higher quality product that passed the electrical test of the wafer, and bin 2 represents the lower quality product that passed the electrical test of the wafer.
표 2에서 명백히 알 수 있듯이, 본 발명에 따르면, 웨이퍼의 수율도 월등히 향상된다.As is apparent from Table 2, according to the present invention, the yield of the wafer is also greatly improved.
상기 서술한 바와 같이, 본 발명에 따르면, 이온 주입시 안정한 균일성으로 인해 웨이퍼의 수율이 향상된다. 또한 이온 주입이 완료되어 디스크로부터 오리엔트부로 옮겨지는 웨이퍼들은 안정한 상태로 놓여지게 되고 오리엔트부에서 카세트로 웨이퍼들을 되옮기는 과정에서 웨이퍼가 손상되거나 또는 드래깅(dragging)에 의한 웨이퍼의 깨어짐을 방지할 수 있다.As described above, according to the present invention, the yield of the wafer is improved due to the stable uniformity during ion implantation. In addition, wafers transferred from the disk to the orient portion after the ion implantation is completed may be placed in a stable state, and the wafer may be damaged or dragged during dragging from the orient portion to the cassette. .
본 발명은 상기 실시예에 한정되지 않으며, 많은 변형이 본 발명의 기술적 사상내에서 당 분야에서 통상의 지식을 가진자에 의하여 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical idea of the present invention.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031662A KR0151082B1 (en) | 1995-09-25 | 1995-09-25 | Wafer putting method for ion implant |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950031662A KR0151082B1 (en) | 1995-09-25 | 1995-09-25 | Wafer putting method for ion implant |
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| Publication Number | Publication Date |
|---|---|
| KR970018017A KR970018017A (en) | 1997-04-30 |
| KR0151082B1 true KR0151082B1 (en) | 1998-12-01 |
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| KR1019950031662A KR0151082B1 (en) | 1995-09-25 | 1995-09-25 | Wafer putting method for ion implant |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100671159B1 (en) * | 2005-08-25 | 2007-01-17 | 동부일렉트로닉스 주식회사 | Arrangement method of semiconductor wafer for ion beam in disk implant process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100671159B1 (en) * | 2005-08-25 | 2007-01-17 | 동부일렉트로닉스 주식회사 | Arrangement method of semiconductor wafer for ion beam in disk implant process |
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