KR0142757B1 - Semiconductor package mold with a bump type air vent kits - Google Patents
Semiconductor package mold with a bump type air vent kitsInfo
- Publication number
- KR0142757B1 KR0142757B1 KR1019950004588A KR19950004588A KR0142757B1 KR 0142757 B1 KR0142757 B1 KR 0142757B1 KR 1019950004588 A KR1019950004588 A KR 1019950004588A KR 19950004588 A KR19950004588 A KR 19950004588A KR 0142757 B1 KR0142757 B1 KR 0142757B1
- Authority
- KR
- South Korea
- Prior art keywords
- air vent
- bump
- mold
- type air
- semiconductor package
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000000926 separation method Methods 0.000 claims description 15
- 238000000465 moulding Methods 0.000 abstract description 16
- 230000007547 defect Effects 0.000 abstract description 7
- 239000011800 void material Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000011347 resin Substances 0.000 description 19
- 229920005989 resin Polymers 0.000 description 19
- 238000000034 method Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
본 발명은 범프형 에어밴트를 갖는 반도체 패키지 금형에 관한 것으로서, 범프분리핀 및 범프 분리핀구멍을 포함하는 범프형 에어밴트를 갖음으로써, 종래 기술의 에어밴트를 갖는 금형에서 발생하는 점 보이드(Dot void) 또는 심한 경우 불완전 성형등의 전술한 결점을 제거하는 효과를 나타내는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package mold having a bumped air vent, and having a bumped air vent including a bump separating pin and a bump separating pin hole, thereby causing a dot void generated in a mold having a conventional air vent. void) or, in severe cases, exhibits an effect of eliminating the above-described defects such as incomplete molding.
Description
제1도는 종래기술에 다른 일반적인 에어밴트(Air vent)를 갖는 하단금형의 요부확대사시도.Figure 1 is an enlarged perspective view of the bottom of the mold having a general air vent (air vent) different from the prior art.
제2도는 종래기술에 따른 금형에 의한 제품의 실시예를 도시한 평면도.2 is a plan view showing an embodiment of a product by a mold according to the prior art.
제3도는 본 발명에 따른 범프형 에어밴트킷트(Bumped air vent kit)를 갖는 하부금형의 평면도.3 is a plan view of a lower mold having a bumped air vent kit according to the present invention.
제4도는 본 발명에 따른 하부금형의 범프형 에어밴트킷트 부분의 요부확대평면도.Figure 4 is an enlarged plan view of the main portion of the bump-type air vent kit portion of the lower mold according to the present invention.
제5도는 본 발명에 따른 하부금형의 범프형 에어밴트킷트 부분의 요부확대단면도.Figure 5 is an enlarged cross-sectional view of the main portion of the bump-type air vent kit portion of the lower mold according to the present invention.
제6도는 본 발명에 따른 실시예로써 결합된 상부금형 및 하부금형의 범프형 에어밴트킷트 부분의 요부확대단면도.Figure 6 is an enlarged cross-sectional view of the main portion of the bumped air vent kit portion of the upper mold and the lower mold combined as an embodiment according to the present invention.
제7도는 본 발명에 따른 실시예로써 하부금형의 범프형 에어밴트킷트 부분의 요부확대단면도.Figure 7 is an enlarged cross-sectional view of the main portion of the bump-type air vent kit portion of the lower mold in accordance with an embodiment of the present invention.
제8도는 본 발명에 따른 금형에 의한 제품의 실시예를 도시한 평면도.8 is a plan view showing an embodiment of a product with a mold according to the present invention.
*도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
11,42C:에어밴트 35:캐비티11, 42C: Air Vent 35: Cavity
40:하부금형 42:범프형 에어밴트킷트40: lower mold 42: bump type air vent kit
42B:범프 에어밴트홀 43A:범프 분리핀구멍42B: Bump air vent hole 43A: Bump separation pin hole
43:범퍼분리핀 44:분리핀43: Bumper Separation Pin 44: Separation Pin
44A:분리핀구멍44 A: Separation pin hole
본 발명은 범프형 에어밴트 구조를 갖는 반도체 패키지 금형에 관한 것이며, 보다 상세하게는 반도체 패키지 성형공정시, 금형의 캐비티(Cavity)내로 주입되는 수지를 완벽하기 충전시키기 위해, 범프형 에어밴트를 통하여 수지를 캐비티내부가 아닌 범프형 에어밴트까지 배출시키므로서, 주입압력 및 배출압력 차이 또는 수지의 입자크기에 의하여 캐비티내의 충전율의 저하로 발생하는 점 보이드(Dot void) 또한 심한 경우 불완전 성형등의 불량을 방지하는 범프형 에어밴트를 갖는 반도체 패키지 금형에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package mold having a bumped air vent structure, and more particularly, to bumping the resin injected into the cavity of the mold during the semiconductor package molding process. As the resin is discharged to the bump type air vent instead of inside the cavity, the voids caused by the drop in filling rate in the cavity due to the difference in injection pressure and discharge pressure or the particle size of the resin are also poor, such as incomplete molding. It relates to a semiconductor package mold having a bump-type air vent to prevent.
반도체 장치(Device)로 대표되는 반도체 산업이 현대의 정보화 사회에 있어서 기반산업에 위치하고 있다는 것은 주지의 사실이다. 반도체 장치에는 크게 분류하면 다이오드, 트랜지스터, 다이리스터 등의 개별 반도체와 SSI(Small scale integration), MSI(Medium scale integration), LSI(Large scale integration), VLSI(Very large scale integration) 등의 모노리딕(Monolithic) IC로 구분되는 집적회로(Integrated curcuit, IC)로 양분된다. 이들 반도체 장치의 생산 금액면에서는 IC의 비율이 압도적으로 높고 대략 80% 이상을 점유하고 있다. 다이오드, 트랜지스터, IC 등의 반도체 장치는 현재 주로 실리콘 웨이퍼상에 미세한 회로를 형성해서 칩(Chip)을 만들고 있지만 먼지, 열, 습기, 전기 및 기계적부하 등 각종의 외부 요인에 의한 칩의 손상을 방지하고, 장치로서의 신뢰성을 향상시키기 위해 칩 주위를 금속, 세라믹 또는 수지(혹은 수지계 성형재료)에 의하여 봉지(Encapsulation)한 패키지 형태로 실용화하고 있다.It is well known that the semiconductor industry represented by semiconductor devices is located in the infrastructure industry in the modern information society. The semiconductor devices are broadly classified into individual semiconductors such as diodes, transistors, and thyristors, and monolithics such as small scale integration (SSI), medium scale integration (MSI), large scale integration (LSI), and very large scale integration (VLSI). It is divided into integrated circuit (IC) which is divided into IC. In terms of the production amount of these semiconductor devices, the ratio of IC is overwhelmingly high and occupies approximately 80% or more. Semiconductor devices such as diodes, transistors, and ICs currently form chips by forming minute circuits on silicon wafers, but prevent damage to chips due to various external factors such as dust, heat, moisture, electrical and mechanical loads. In order to improve the reliability as an apparatus, the package is encapsulated in a package in which the periphery of the chip is encapsulated by metal, ceramic, or resin (or resin-based molding material).
이들 봉지방법 중 수량면에서 압도적인 것은 수지봉지이고, COB(Chip on borard) 및 TAB(Tape automated bonding) 등 액상수지에 의한 봉지 및 투명수지의 개발에 의한 LED(Light emitting diode), CCD(Charge coupled device)에의 적용 확대등에 의하여 그 비율이 높아져가고 있고, 현시점에서는 금속 및 세라믹 DIP(Dual inline package)을 포함한 세라믹에 의한 봉지는 극히 한정된 응용분야에 사용되고 있다.Among the encapsulation methods, resin bags are overwhelming in terms of quantity, LED (Light emitting diode) and CCD (Charge) by developing encapsulation and transparent resin such as COB (Chip on borard) and TAB (Tape automated bonding) The ratio is increasing due to the expansion of applications to coupled devices, and at present, ceramic encapsulation including metal and ceramic dual inline packages (DIP) is used in extremely limited applications.
이하, 일반적으로 사용되어지는 수지봉지에 의한 성형은 다음과 같다. 반도체 조립공정중 집적 IC와 리드 프레임의 단자간을 금선 또는 동선을 이용하여 연결한 후, 이것들을 외부로부터 보호하기 위하여 수지와 금형으로 성형공정을 행한다. 더욱 상세하게는 제품상 패키지의 몸체를 형성하는 캐비티 내부가 성형된 후, 금형과 서로 용이하게 분리되도록 복수개의 분리핀(Eject pin)을 가지며, 소정의 크기로 설정된 패키지의 크기만큼 리드프레임의 댐바(Damber) 부분을 클램핑(Clamping)하는 클램프부분, 수지가 캐비티내에 충전될 때, 압력이 밖으로 나갈 수 있도록 주입구를 제외한 부분에 에어밴트를 설치하였다.Hereinafter, molding using a resin bag generally used is as follows. During the semiconductor assembly process, the terminals of the integrated IC and the lead frame are connected using gold or copper wires, and then a molding process is performed with a resin and a mold to protect them from the outside. More specifically, after the cavity forming the body of the package on the product is molded, the mold has a plurality of eject pins to be easily separated from each other, the dam bar of the lead frame by the size of the package set to a predetermined size An air vent was installed in the clamp portion for clamping the (Damber) portion, and the portion except the inlet port so that the pressure can go out when the resin is filled in the cavity.
종래기술에 따른 금형의 에어밴트 제작에 있어서 제1도 및 제2도를 참조하면, 반도체 패키지의 성형공정에 있어서, 주입된 수지는 하단금형(10)의 벽(12) 내부의 캐비티(5)를 충전하고, 공기 배출구(11)를 통하여 공기 및 소량의 수지를 배출시킨다. 성형공정이 완료된 후, 분리핀(14)을 이용하여 패키지를 분리시킨다. 상기 에어밴트(11)에 있어서, 에어밴트의 크기는 제작 업체별로 각각 다를 수 잇으나, 폭(이하 W' 한다.)은 패키지 구석의 모따기값(이하 PW라 한다.)과 상관관계를 가지며, PW값이 1.0mm일때(기정치) W'는 보통 0.5mm 내지 0.8mm이며, h'의 값은 0.02mm 내지 0.03mm 정도로 에어밴트(11)를 제작하고 있다. 주입된 수지는 에어밴트의 크기가 수지입자와 거의 동일하거나 조금 큰 경우에 있어서, 이로 인해 에어밴트가 막혀 점 보이드(void)(31) 또는 심한 경우 불완전 성형(31A)이 된다. 또한 에어밴트 설치 부분마다 리드 프레임(20)면에 프레쉬(30)가 나오게 된다.Referring to FIGS. 1 and 2 in the air vent fabrication of a mold according to the prior art, in the molding process of a semiconductor package, the injected resin is a cavity 5 inside the wall 12 of the lower mold 10. And discharges air and a small amount of resin through the air outlet (11). After the molding process is completed, the separation pin 14 is used to separate the package. In the air vent 11, the size of the air vent may be different for each manufacturer, the width (hereinafter referred to as W ') has a correlation with the chamfer value (hereinafter referred to as PW) of the corner of the package, When the PW value is 1.0 mm (default value), W 'is usually 0.5 mm to 0.8 mm, and the h' value is about 0.02 mm to 0.03 mm to produce the air vent 11. If the injected resin has a size of the airvant almost the same as or slightly larger than the resin particles, this causes the airvant to be blocked, resulting in point voids 31 or, in severe cases, incomplete molding 31A. In addition, the fresh 30 comes out on the surface of the lead frame 20 for each air vent installation part.
일반적인 에어밴트를 갖는 금형은 에어밴트의 크기가 수지입자와 거의 동일하거나 조금 큰 경우에 있어서, 이로 인해 에어밴트가 막혀 점 보이드(Dot void) 또는 심한 경우 불완전 성형이 되어 불량이 발생된다. 또한, 이러한 외형적인 불량이외에도, 수지 주입시에 캐비티내의 압력이 에어밴트의 크기에 따라 배출압력과 차이가 발생하므로, 패키지가 클 경우에는 주입압력을 더욱 크게 하므로써 성형조건이 달라지거나 와이어선(금선)의 변형 등과 같은 불량이 발생된다.In the case of a mold having a general air vent, when the size of the air vent is about the same as or slightly larger than the resin particles, the air vent is blocked, resulting in dot voiding or incomplete molding in severe cases, thereby causing a defect. In addition to such external defects, the pressure in the cavity at the time of resin injection differs from the discharge pressure depending on the size of the air vent. Therefore, in the case of a large package, the molding conditions may be changed by increasing the injection pressure. A defect such as deformation of) is generated.
따라서, 본 발명의 목적은 상술한 종래 기술의 문제점을 갖지 않도록 종래의 일반적인 에어밴트를 범프형으로 제작함으로써, 수지를 범프형 에어밴트까지 배출시켜 캐비티 내부의 압력을 감소시키고, 결함부분이 발생하더라도 캐비티 내부가 아니라 성형공정 완료후, 절단되어지는 범프형 에어밴트부분에 발생되도록 하는 반도체 패키지 금형을 제공하는 것이다.Accordingly, an object of the present invention is to manufacture a conventional general air vent in a bump form so as not to have the above-mentioned problems of the prior art, by discharging the resin to the bump air vent to reduce the pressure inside the cavity, even if a defective portion occurs It is to provide a semiconductor package mold to be generated in the bump-type air vent portion to be cut after completion of the molding process, not inside the cavity.
본 발명은 상기한 목적을 달성하기 위하여, 에어밴트를 갖는 반도체 패키지 금형에 있어서, 범프분리핀 및 범프 분리핀구멍을 포함하는 범프형 에어밴트킷트를 갖는 것을 특징으로 하는 반도체 패키지 금형을 제공한다.In order to achieve the above object, the present invention provides a semiconductor package mold having a bump type air vent kit including a bump separating pin and a bump separating pin hole in a semiconductor package mold having an air vent.
이하, 첨부 도면을 참조하여 본 발명을 보다 상세하게 설명하고자 한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
제1도는 종래 기술에 따른 일반적인 에어잰트를 갖는 하단금형의 요부확대사시도이다.1 is an enlarged perspective view of a main portion of a bottom mold having a general air jitter according to the prior art.
제2도는 종래 기술에 따른 금형에 의한 제품의 실시예를 도시한 평면도이다.2 is a plan view showing an embodiment of a product by a mold according to the prior art.
제3도는 본 발명에 따른 범프형 에어밴트킷트(Bumped air vent kit)를 갖는 하부금형의 평면도이다. 패키지의 성형공정에 있어서, 반도체 패키지 하부금형(40)은 수지를 캐비티(35) 내부로 주입할 수 있도록 주입구(Gate)(45)를 가지며, 주입구(45)를 제외한 구석부분에 한개 또는 복수개의 범프형 에어밴트(42C)를 가지며, 성형 완료후 상부금형 및 하부금형(40)을 분리시킬 때, 패키지(100)를 캐비티(35)내에서 분리시키는 분리핀(44) 및 범프형 에어밴트킷트(42)를 분리시키는 범프분리핀(43)을 가지며, 범프형 에어밴트킷트(42)를 지지하는 클램프(49)를 가진다.3 is a plan view of a lower mold having a bumped air vent kit according to the present invention. In the molding process of the package, the semiconductor package lower mold 40 has a gate 45 so as to inject the resin into the cavity 35, one or a plurality of corners except for the injection hole 45. Bump-type air vent kit having a bumped air vent 42C and separating the package 100 from the cavity 35 when the upper mold and the lower mold 40 are separated after the molding is completed. It has a bump separating pin 43 for separating the 42 and a clamp 49 for supporting the bump type air vent kit 42.
제4도는 본 발명에 따른 하부금형의 범프형 에어밴트킷트 부분의 요부확대평면도이고, 제7도는 본 발명에 따른 실시예로써 하부금형의 범프형 에어밴트킷트 부분의 요부확대단면도이다. 제4도 및 제7도를 참조하면, 상기 범프형 에어밴트(42)의 아래에는 범프분리핀(43) 및 범프 분리핀구멍(43A)을 가진다. 상기 범프형 에어밴트(42)를 갖는 반도체 패키지 금형의 제작방법 및 설치방법을 기술하면, 하부금형(40)에 일정 크기의 캐비티(35)를 가공하고, 캐비티(35)의 아래부분에 분리핀구멍(44A)을 ψ44로 가공하고, 범프 에어밴트홀(42B)을 γ로 가공하고, 범프 분리핀구멍(43A)을 ψ43으로 가공한 후, 분리핀(44)을 분리핀구멍(44A)에 억지끼워맞춤으로 접속하는데 있어서, 지름의 크기는 ψ44ψ44'이 되며, 범프분리핀(43)을 범프분리핀구멍(43A)에 억지끼워맞춤으로 접속하는데 있어서, 지름의 크기는 ψ43ψ43'이 된다. 또한 범프형 에어밴트킷트(42)를 범프형 에어밴트홀(42B)에 억지끼워맞춤으로 접속하는데 있어서, 크기는 γγ'이 된다. 더욱이, 상기 범프형 에어밴트(42)는 금형과 일체형으로 제작할 수 있다. 본 발명에 따른 실시예를 수치적으로 기술하면 다음과 같다. 에어밴트(42C)의 W는 패키지의 PW값과 비교하여 작게 제작하고, h는 0.2 내지 0.35mm으로 가공한다. 범프형 에어밴트(42)의 가공치는 W1을 기준으로 2.0 내지 3.0mm, W2는 1.5 내지 2.5mm, h1은 1.0 내지 1.5mm로 가공하며, h2는 h와 동일한 값으로 설계하여 가공한다.(패키지의 크기:28×28mm일때) 상기 설계치는 본 발명에 따른 실시예로써, 전술한 실시예에 한정되지 않고, 변형 실시가 가능하다.4 is an enlarged plan view of a main portion of the bump-type air vent kit portion of the lower mold according to the present invention, and FIG. 7 is an enlarged cross-sectional view of a portion of the bump type air vent kit portion of the lower mold according to the present invention. 4 and 7, the bump type air vent 42 has a bump separating pin 43 and a bump separating pin hole 43A. The manufacturing method and installation method of the semiconductor package mold having the bump-type air vent 42 will be described. A cavity 35 having a predetermined size is processed in the lower mold 40, and a separation pin is formed at the bottom of the cavity 35. The hole 44A is machined with ψ 44 , the bump air vent hole 42B is machined with γ, the bump separation pin hole 43A is machined with ψ 43 , and the separation pin 44 is separated by the separation pin hole 44A. ), The diameter is ψ 44 ψ 44 ', and the bump separation pin 43 is connected to the bump separation pin hole 43A by interference fit, and the size of the diameter is ψ. 43 ψ 43 '. In addition, when the bump type air vent kit 42 is connected to the bump type air vent hole 42B by fitting, the size becomes γγ '. In addition, the bump type air vent 42 may be manufactured integrally with a mold. The embodiment according to the present invention is described numerically as follows. W of air vent 42C is made small compared with the PW value of a package, and h is processed to 0.2-0.35 mm. Value processing on the basis of W 1 2.0 to 3.0mm, W 2 is 1.5 to 2.5mm, h 1 of the bump-shaped air vent 42, and processed to 1.0 to 1.5mm, h 2 is processing that is designed to the same value as h (Size of package: 28 x 28 mm) The design value is an embodiment according to the present invention, and is not limited to the above-described embodiment, and may be modified.
제5도는 본 발명에 따른 하부금형이 범프형 에어밴트킷트 부분의 요부확대단면도이다. 성형완료후에 패키지(100)는 분리핀(44) 및 범프분리핀(43)을 화살표 방향으로 상, 하로 움직이면, 캐비티 벽면(35A)은 이점쇄선으로 도시한 바와 같이 서로 분리된다.Figure 5 is an enlarged cross-sectional view of the main portion of the lower mold bump-type air vent kit according to the present invention. After the molding is completed, the package 100 moves the separation pin 44 and the bump separation pin 43 up and down in the direction of the arrow, and the cavity wall surface 35A is separated from each other as shown by the dashed line.
제6도는 본 발명의 따른 실시예로써 결합된 상부금형 및 하부금형의 범프형 에어밴트킷트 부분의 요부확대단면도이고, 제8도는 본 발명에 따른 금형에 의한 제품의 실시예를 도시한 평면도이다. 제6도 및 제8도를 참조하면, 상부금형(40A)의 범프형 에어밴트의 구조와 하부금형(40)의 범프형 에어밴트킷트(42)의 구조와 비교하여 보면, 동일하게 설계하여 제작하거나, 또는 변형설계하여 제작할 수 있다. 이와 같이, 본 발명에 따른 범프형 에어밴트 구조를 갖는 반도체 패키지 금형을 적용하였을 대, 리드 프레임면(20) 위에 있는 범프형 에어밴트 부분(42')은 범프형 에어밴트부분을 지지하는 보조지지바(47)를 포함하며, 상기 범프형 에어밴트부분(42')은 절단, 절곡공정에 의해서 제거되고, 완성품인 패키지(100)가 생산된다.Figure 6 is an enlarged cross-sectional view of the main portion of the bumped air vent kit portion of the upper mold and the lower mold combined as an embodiment of the present invention, Figure 8 is a plan view showing an embodiment of a product by a mold according to the present invention. Referring to FIGS. 6 and 8, the structure of the bump type air vent of the upper mold 40A and the structure of the bump type air vent kit 42 of the lower mold 40 are the same. Or it can be manufactured by deformation design. As described above, when the semiconductor package mold having the bump-type air vent structure according to the present invention is applied, the bump-type air vent portion 42 'on the lead frame surface 20 has an auxiliary support for supporting the bump-type air vent portion. It includes a bar 47, the bump-type air vent portion 42 'is removed by a cutting, bending process, the finished package 100 is produced.
본 발명에 의한 실시예의 효과에 있어서, 종래 기술과 비교하여 보면 도표 1과 같다.In the effect of the embodiment according to the present invention, it is shown in Table 1 compared with the prior art.
본 발명에 의한 구조에 따르면, 종래 에어밴트의 크기가 수지입자와 거의 동일하거나 조금 큰 경우에 에어밴트가 막혀 점 보이드 또는 심한 경우 불완전 성형이 되어 불량이 발생하며 또한, 이러한 외형적인 불량 이외에도 수지 주입시에 캐비티내의 압력이 에어밴트의 크기에 따라 배출압력과 차이가 발생하므로, 패키지가 클 경우에는 주입압력을 더욱 크게 하므로써 성형조건이 달라지거나, 와이어선(금선)의 변형등과 같은 불량등을 성형공정완료후 절단되어지는 범프형 에어밴트부분에 발생되도록 함으로써, 전술한 결점을 방지하여 신뢰성을 향상시키는 잇점이 있다.According to the structure according to the present invention, when the size of the conventional air vent is almost the same as or slightly larger than the resin particles, the air vent is blocked and a void occurs in severe cases, or incomplete molding, and defects occur. When the pressure inside the cavity is different from the discharge pressure depending on the size of the air vent, if the package is large, the injection pressure may be increased, resulting in defects such as deformation of the wire or gold wire. By causing the bump-type air vent portion to be cut after completion of the molding process, there is an advantage of improving the reliability by preventing the above-mentioned defects.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950004588A KR0142757B1 (en) | 1995-03-07 | 1995-03-07 | Semiconductor package mold with a bump type air vent kits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950004588A KR0142757B1 (en) | 1995-03-07 | 1995-03-07 | Semiconductor package mold with a bump type air vent kits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960035930A KR960035930A (en) | 1996-10-28 |
| KR0142757B1 true KR0142757B1 (en) | 1998-08-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950004588A KR0142757B1 (en) | 1995-03-07 | 1995-03-07 | Semiconductor package mold with a bump type air vent kits |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0142757B1 (en) |
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1995
- 1995-03-07 KR KR1019950004588A patent/KR0142757B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960035930A (en) | 1996-10-28 |
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