KR0129712Y1 - Rotary coating device of semiconductor manufacturing device - Google Patents
Rotary coating device of semiconductor manufacturing device Download PDFInfo
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- KR0129712Y1 KR0129712Y1 KR2019950027950U KR19950027950U KR0129712Y1 KR 0129712 Y1 KR0129712 Y1 KR 0129712Y1 KR 2019950027950 U KR2019950027950 U KR 2019950027950U KR 19950027950 U KR19950027950 U KR 19950027950U KR 0129712 Y1 KR0129712 Y1 KR 0129712Y1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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Abstract
본 고안은 웨이퍼 뒷면으로 유입되는 오염액을 효과적으로 방지하기 위한 반도체 제조장치의 회전 도포 장치에 관한 것으로, 웨이퍼 뒷면에 소정 간격을 두고 형성된 웨이퍼 뒷면 덮개부와, 웨이퍼 뒷면 덮개부에 형성되되 웨이퍼 뒷면 모서리 부위와 대응되는 위치에 웨이퍼와 근접한 거리를 두고 형성되어 웨이퍼 뒷면과 웨이퍼 뒷면 덮개부 사이에 일정한 공간을 형성하는 링과, 웨이퍼와 웨이퍼 뒷면 덮개부 사이의 공간으로 가스를 공급하는 가스 공급라인을 포함하여 이루어진다.The present invention relates to a rotary coating device of a semiconductor manufacturing apparatus for effectively preventing contaminants flowing into the back side of a wafer, wherein the back side cover portion formed at a predetermined interval on the back side of the wafer and formed on the back side cover portion of the wafer, A ring which is formed at a position corresponding to the portion at a distance from the wafer to form a predetermined space between the back surface of the wafer and the back cover of the wafer, and a gas supply line supplying gas to the space between the wafer and the back cover of the wafer; It is done by
Description
제1도는 종래의 반도체 제조 장치의 회전 도포 장치를 도시한 도면.1 is a view showing a rotation coating device of a conventional semiconductor manufacturing device.
제2도는 본 고안의 반도체 제조 장치의 회전 도포 장치를 도시한 도면.2 is a view showing a rotation coating device of the semiconductor manufacturing device of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
21 : 웨이퍼 22 : 안착부21: wafer 22: seating portion
22 : 회전축 23 : 회전수단22: rotating shaft 23: rotating means
24 : 도포액 분사수단 25 : 웨이퍼 상면 세척수 분사수단24: coating liquid injection means 25: wafer upper surface washing water injection means
26 : 링 27 : 웨이퍼 뒷면 덮개부26 ring 27 wafer back cover
28 : 웨이퍼 뒷면 세척수 분사수단 29 : 가스 공급라인28: back surface of the washing water injection means 29: gas supply line
본 고안은 반도체 제조 장치의 회전 도포 장치에 관한 것으로, 특히 웨이퍼 뒷면의 오염 방지에 적당하도록 한 반도체 제조 장치의 회전 도포 장치에 관한 것이다.The present invention relates to a spin coating apparatus for a semiconductor manufacturing apparatus, and more particularly, to a spin coating apparatus for a semiconductor manufacturing apparatus adapted to prevent contamination of the back surface of a wafer.
웨이퍼를 회전시켜 웨이퍼 상면에 도포액을 도포하는 방식은 포토레지스 도포와 현상액 도포 등에서 사용되고 있다.The method of applying the coating liquid to the upper surface of the wafer by rotating the wafer is used in photoresist coating and developer coating.
제1도는 종래의 반도체 제조 장치의 호전 도포 장치 중 현상액 도포장치를 도시한 도면으로, 도면을 참조하여 종래의 장치를 간단히 설명하면,FIG. 1 is a diagram showing a developer coating apparatus among the conventional coating apparatuses of the semiconductor manufacturing apparatus. Referring to the drawings, the conventional apparatus will be briefly described.
웨이퍼(11)가 안착되고, 회전축(12')이 회전수단(13) 즉, 모터와 연결되어 안착된 웨이퍼 (11)를 회전시키는 안착부(12)가 있다. 도면부호(14)는 안착부(12)에 안착된 웨이퍼(11) 상면으로 현상액을 분사하는 현상액 분사 노즐을 나타내고, 도면부호(15)는 웨이퍼 상면 세척수 분사 노즐을 나타낸다.The wafer 11 is seated, and there is a seating portion 12 which rotates the wafer 11 seated with the rotating shaft 12 'connected to the rotating means 13, that is, the motor. Reference numeral 14 denotes a developer jetting nozzle for injecting the developer onto the upper surface of the wafer 11 seated on the seating part 12, and reference numeral 15 denotes a wafer upper surface washing water jetting nozzle.
도면부호(16)는 링을 나타낸 것으로 웨이퍼(11)와 근접한 간격을 갖으므로써 웨이퍼 뒷면으로 현상액이나 세척수 등과 같은 액체가 유입되는 것을 방지하는 역할을 하게 되며, 이러한 링(16)을 지지하기 위해 링 받침부(17)가 형성된다.The reference numeral 16 denotes a ring, and has a distance between the wafer 11 and a role of preventing a liquid such as developer or washing water from flowing into the back of the wafer, and to support the ring 16. The supporting part 17 is formed.
도면부호(18)는 웨이퍼 뒷면 세척수 분사 라인이며, 링 받침부(17)에 형성된 형태이다.Reference numeral 18 is a wafer back water spray line, and is formed in the ring support 17.
종래 장치의 동작은, 웨이퍼(11) 상의 포토레지스트 현상을 위해 안착부(12)에 웨이퍼(11)를 안착시킨 후, 회전시켜 현상액 분사 노즐(14)로 현상액을 분사하여 웨이퍼 상에 도포한다. 그리고 일정시간이 지난 후, 웨이퍼 상면 세척수 분사 노즐(15)과 웨이퍼 뒷면 세척수 분사 라인(18)을 통해 순수(DI)를 분사하므로써 웨이퍼(11)의 상면과 뒷면을 린스하여 준다. 링(16)은 웨이퍼(11)와 근접한 간격을 유지하므로써 웨이퍼 전면에 도포된 현상액이나 세척수가 웨이퍼 뒷면으로 유입될 시에 그 액체들과의 표면장력을 이용하여 유입을 방지하는 역할을 하게 된다.In the operation of the conventional apparatus, the wafer 11 is seated on the seating portion 12 for photoresist development on the wafer 11, and then rotated and sprayed with a developer spray nozzle 14 to apply the developer onto the wafer. After a predetermined time, the upper and rear surfaces of the wafer 11 are rinsed by spraying pure water DI through the wafer upper surface washing water spray nozzle 15 and the wafer rear surface washing water spray line 18. The ring 16 serves to prevent the inflow by using the surface tension with the liquid when the developer or the wash water applied to the front surface of the wafer flows into the back side of the wafer by keeping the gap close to the wafer 11.
그런데 종래의 장치는 단지 하나의 링(16)으로 액체의 웨이퍼 뒷면 유입을 방지하고 있으므로써 유입되려는 현상액 및 세척수 등의 액체를 효과적으로 막지 못하고 있으며, 따라서 웨이퍼 뒷면으로 분사되는 세척수의 위치 즉, 웨이퍼 뒷면 모서리 부근보다 안쪽으로 유입되는 경우가 발생하여 웨이퍼 뒷면을 오염을 효과적으로 방지하지 못하는 문제점이 있다.However, the conventional apparatus does not effectively prevent liquid such as developer and washing water to be introduced by preventing the liquid from flowing into the back side of the wafer with only one ring 16, and thus, the position of the washing water sprayed onto the back side of the wafer, that is, the back side of the wafer. There is a problem in that the inflow to the inside than the vicinity of the edge does not effectively prevent the back of the wafer contamination.
이와 같은 종래 장치의 문제점을 해결하기 위해, 본 발명의 웨이퍼 뒷면을 세척하기 위한 세척수 분사수단을 가지고 웨이퍼를 회전시켜 웨이퍼 상면에 도포액을 도포하는 반도체 제조 장치의 회전 도포 장치는, 웨이퍼 뒷면에 소정 간격을 두고 형성된 웨이퍼 뒷면 덮개부와, 웨이퍼 뒷면 덮개부에 형성되되 웨이퍼 뒷면 모서리 부위와 대응되는 위치에 웨이퍼와 근접한 거리를 두고 형성되어 웨이퍼 뒷면과 웨이퍼 뒷면 덮개부 사이에 일정한 공간을 형상하는 링과, 웨이퍼와 웨이퍼 뒷면 덮개부 사이의 공간으로 가스를 공급하는 가스 공급라인을 포함하여 이루어진다.In order to solve such a problem of the conventional apparatus, the rotary coating apparatus of the semiconductor manufacturing apparatus for applying the coating liquid to the upper surface of the wafer by rotating the wafer with the washing water jetting means for cleaning the back of the wafer of the present invention, A ring formed at intervals between the wafer back cover part and the wafer back cover part formed at a distance corresponding to the wafer back edge at a position corresponding to the wafer back edge part to form a predetermined space between the wafer back cover and the wafer back cover part; It comprises a gas supply line for supplying gas to the space between the wafer and the wafer back cover.
여기서 도포액은 현상액이고 웨이퍼에 도포된 현상액을 세척하기 위해 웨이퍼 상면으로 세척수를 분사하는 웨이퍼 상면 세척수 분사수단이 형성된 것이 특징이며, 링은 2개 이상 형성되고, 가스 공급라인을 통해 공급되는 가스는 N2 인 것이 특징이며, 웨이퍼의 회전은 회전수단에 회전축이 연결되어 회전하는 안착부에 안착되어 회전하고 안착부와 웨이퍼 뒷면 덮개부는 밀착 회전대우된 것이 특징이다.Here, the coating solution is a developer, and in order to clean the developer applied on the wafer, the wafer top washing water spraying means for spraying the washing water is formed on the wafer. Two or more rings are formed, and the gas supplied through the gas supply line N2, the rotation of the wafer is connected to the rotating shaft is connected to the rotating seat is seated on the rotating seat is rotated and the seating portion and the back cover portion of the wafer is characterized in close rotation treatment.
이하, 첨부한 도면을 참조하여 본 고안의 일실시예를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 고안에 따른 일실시예를 도시한 도면으로써 현상액 도포장치를 나타내고 있다.2 is a view showing an embodiment according to the present invention showing a developer coating device.
도시한 바와 같이, 웨이퍼(21)가 안착되고 회전축(22')이 회전수단(23) 즉, 모터와 연결되어 안착된 웨이퍼(21)를 회전시키는 안착부(22)가 있다. 이 안착부(22)는 웨이퍼(21)를 흡착하는 방식을 택하고 있다. 도포액 분사수단(24)은 안착된 웨이퍼(21) 상면으로 현상액을 분사하도록 형성된다. 본 실시예와 같이 현상액 도포장치인 경우는 웨이퍼에 도포된 현상액을 세척하기 위해 웨이퍼 상면으로 세척수를 분사하는 웨이퍼 상면 세척수 분사수단(25)이 형성된다. 그러나 포토레지스트 도포장치인 경우는 상면 세척수 분사수단이 형성되지 않을 수 있다.As shown, there is a seating portion 22 in which the wafer 21 is seated and the rotating shaft 22 ′ rotates the wafer 21 seated in connection with the rotation means 23, that is, the motor. The seating portion 22 adopts a method of adsorbing the wafer 21. The coating liquid spraying means 24 is formed to spray the developing solution onto the seated wafer 21 upper surface. In the case of the developer coating apparatus as in the present embodiment, the wafer upper surface washing water spraying means 25 for spraying the washing water onto the upper surface of the wafer to wash the developer applied to the wafer is formed. However, in the case of the photoresist coating apparatus, the upper surface washing water spraying means may not be formed.
도면부호(26)는 링을 도시한 것으로써, 안착된 웨이퍼 뒷면 모서리 부위와 대응되는 위치에 웨이퍼(21)와 근접한 간격, 약 1mm 내지 2mm 정도를 갖으므로써 웨이퍼 뒷면을 타고 흐르는 현상액 및 세척수가 링(26)과 접하여 표면장력이 생김으로써 액체가 유입되는 것을 방지하는 역할을 하는 데, 2개 이상으로 형성하면 2개 이상의 부위에서 표면장력이 생김으로써 더 효과적으로 액체의 유입을 막을 수 있다. 이 링(26)이 부착 형성되고 안착부(22)의 회전축(22')과 밀착 회전대우되어 웨이퍼(21)와 사이에 일정 공간(도면에서 'A'로 표시)을 형성하는 웨이퍼 뒷면 덮개부가 도면부호(27)로 나타내져 있다. 이 웨이퍼 뒷면 덮개부(27)와 안착부의 회전축(22')과 밀착을 위해 그 사이에 밀봉부(도시안함)를 설치하여 실링을 하여도 된다.Reference numeral 26 shows a ring, and the developer and washing water flowing through the back of the wafer by having a distance between the wafer 21 and about 1 mm to 2 mm at a position corresponding to the seated back edge of the ring. The surface tension is formed in contact with (26) to prevent the inflow of liquids. When formed in two or more, the surface tension occurs at two or more sites, thereby preventing the inflow of liquids more effectively. The ring 26 is attached and formed to be in close contact with the rotating shaft 22 'of the seating portion 22 to form a predetermined space (indicated as' A' in the drawing) between the wafer 21 and the wafer back portion. Reference numeral 27 is shown. A sealing portion (not shown) may be provided between the wafer rear lid portion 27 and the rotating shaft 22 'for close contact with the mounting portion to seal the wafer.
안착된 웨이퍼 뒷면 모서리 부위로 세척수를 분사하도록 웨이퍼 뒷면 세척수 분사수단(28)이 형성된다. 이 분사수단(28)은 노즐을 형태로써 형성하면 된다. 또 본 고안에서는 웨이퍼(21)와 웨이퍼 뒷면 덮개부(27) 사이에 형성된 공간(A)으로 가스를 공급하여 공간의 압력을 상승시키는 가스 공급라인(29)이 형성되는데, 분사되는 가스로는 N2와 같은 퍼지 가스가 적당하며 그 공간의 압력을 상승시키므로써 웨이퍼 뒷면으로 유입되는 액체 오염물 즉, 현상액 같은 도포액 및 세척수 등의 유입을 효과적으로 막을 수 있게 된다. 이러한 웨이퍼 뒷면 세척수 분사수단(28)과 가스 공급라인(29)은 도면에 도시한 바와 같이 웨이퍼 뒷면 덮개부(27) 내에 형성하면 된다. 그러나 이런 방법 외에 링(26)쪽을 통과하여 웨이퍼(21)와 웨이퍼 뒷면 덮개부(27) 사이에 형성된 공간(A) 내부로 인입하여 형성하는 방법도 가능하다.The wafer back washing water spraying means 28 is formed to spray the washing water to the seated back edge of the wafer. The injection means 28 may be formed in the form of a nozzle. In addition, in the present invention, a gas supply line 29 is formed to supply gas to the space A formed between the wafer 21 and the wafer rear cover part 27 to increase the pressure of the space. The same purge gas is suitable, and by increasing the pressure in the space, it is possible to effectively prevent the inflow of liquid contaminants flowing into the back of the wafer, that is, coating liquid such as developer and washing water. The wafer back washing water injection means 28 and the gas supply line 29 may be formed in the wafer back cover 27 as shown in the drawing. However, in addition to this method, a method of passing through the ring 26 and entering the space A formed between the wafer 21 and the wafer rear cover 27 is also possible.
따라서 본 고안의 작동은, 웨이퍼 상의 포토레지스트 현상을 위해 안착부(22)에 웨이퍼(21)를 안착시킨 후, 회전시켜 도포액 분사수단(24)로 현상액을 분사하여 웨이퍼(21) 상에 도포한다. 그리고 일정시간이 지난 후, 웨이퍼 상면 세척수 분사 수단(25)과 웨이퍼 뒷면 세척수 분사 라인(28)을 통해 순수(DI)를 분사하므로써 웨이퍼의 상면과 뒷면을 린스하여 준다. 이중으로 형성된 링(26)은 웨이퍼(21)와 근버한 간격을 유지하므로써 웨이퍼 전면에 도포된 현상액이나 세척수가 웨이퍼 뒷면으로 유입될 시에 그 액체들과의 표면장력을 이용하여 유입을 방지하는 역할을 하게 된다. 그리고 질소를 웨이퍼와 웨이퍼 뒷면 덮개부 사이에 형성된 공간(A)으로 불어 넣으므로서 그 공간의 압력이 상승되고 또한 질소 가스가 웨이퍼(21)와 링(26)사이의 간격으로 배출되므로서 웨이퍼 뒷면으로 세척수 및 현상액 등의 액체가 유입되는 것을 방지하게 된다.Therefore, in the operation of the present invention, the wafer 21 is seated on the mounting portion 22 for photoresist development on the wafer, and then rotated to spray the developer with the coating liquid spraying means 24 to apply the wafer 21 onto the wafer 21. do. After a predetermined time, the pure water (DI) is sprayed through the wafer upper surface washing water spraying means 25 and the wafer rear surface washing water spraying line 28 to rinse the upper and rear surfaces of the wafer. The double formed ring 26 maintains a gap between the wafer 21 and prevents the inflow by using surface tension with the liquids when the developer or washing water applied to the front surface of the wafer flows into the back side of the wafer. Will be Then, the nitrogen is blown into the space A formed between the wafer and the back cover of the wafer, and the pressure of the space is increased, and the nitrogen gas is discharged at the interval between the wafer 21 and the ring 26, so that the back of the wafer is This prevents the inflow of liquids such as washing water and developer.
상술한 바와 같이 본 고안은 2개 이상의 개수로 형성되는 링과 웨이퍼 뒷면에 인위적으로 공간을 형성하여 그 공간으로 가스를 불어 넣으므로써 도포 공정시 웨이퍼 뒷면으로 유입되어 웨이퍼 뒷면을 오염시키는 현상액 및 세척수를 효과적으로 막을 수 있어서, 웨이퍼 뒷면 오염 예방에 더 효과적이다.As described above, the present invention artificially forms a space on the back of the ring and the wafer formed by two or more numbers, and blows gas into the space, thereby developing a developer and washing water that flow into the back of the wafer during the coating process and contaminate the back of the wafer. It can be effectively prevented, which is more effective in preventing the backside of the wafer.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019950027950U KR0129712Y1 (en) | 1995-10-06 | 1995-10-06 | Rotary coating device of semiconductor manufacturing device |
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| KR2019950027950U KR0129712Y1 (en) | 1995-10-06 | 1995-10-06 | Rotary coating device of semiconductor manufacturing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100862703B1 (en) * | 2007-01-31 | 2008-10-10 | 세메스 주식회사 | Substrate processing apparatus and method comprising a support member and the support member |
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| EP1708249A2 (en) * | 2005-03-31 | 2006-10-04 | Kaijo Corporation | Cleaning device and cleaning method |
| KR100904816B1 (en) * | 2007-12-04 | 2009-06-25 | 주식회사 동부하이텍 | Wafer backside etch equipment and method |
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1995
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100862703B1 (en) * | 2007-01-31 | 2008-10-10 | 세메스 주식회사 | Substrate processing apparatus and method comprising a support member and the support member |
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