KR0128230Y1 - Low Pressure Chemical Vapor Deposition Equipment - Google Patents
Low Pressure Chemical Vapor Deposition Equipment Download PDFInfo
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- KR0128230Y1 KR0128230Y1 KR2019940039576U KR19940039576U KR0128230Y1 KR 0128230 Y1 KR0128230 Y1 KR 0128230Y1 KR 2019940039576 U KR2019940039576 U KR 2019940039576U KR 19940039576 U KR19940039576 U KR 19940039576U KR 0128230 Y1 KR0128230 Y1 KR 0128230Y1
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- South Korea
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- reaction chamber
- vapor deposition
- chemical vapor
- exhaust gas
- low pressure
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000001914 filtration Methods 0.000 claims abstract description 4
- 238000005086 pumping Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 26
- 230000008021 deposition Effects 0.000 abstract description 11
- 239000012495 reaction gas Substances 0.000 abstract description 6
- 239000006227 byproduct Substances 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 241000251468 Actinopterygii Species 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
본 고안은 저압화학기상증착장치에 관한 것으로, 반응가스를 투입하여 증착을 하는 반응실(1)과, 배기기스를 걸러주는 필터부(3)와, 배기를 조절하여 에어밸브(4)와, 자동압력 조절장치인 에이피시밸스(5) 및 진공펌프(6)로 구성된 저압기상화학증착장치를 구성함에 있어, 반응실(1)과 필터부(3) 사이에 플라즈마증착기(10)를 설치하여 배기가스중의 이물질인 미반응가스나 반응부산물들을 제거함으로써 백스트림(Back Stream)시 이물질이 웨이퍼에 묻지 않도록 하고, 자동압력 조절장치인 에이피시밸브(5) 내부의 버터플라이밸브(도시되어 있지 않음)에 부착될시 생기는 에러발생과 이물질이 펌프(6)에 부착될시 생기는 펌프(6)의 성능 저하를 방지하여 준다.The present invention relates to a low-pressure chemical vapor deposition apparatus, the reaction chamber (1) for the deposition by inputting the reaction gas, the filter unit (3) for filtering the exhaust gas, the air valve (4) by adjusting the exhaust, In constructing a low-pressure gas phase chemical vapor deposition apparatus composed of an automatic pressure regulating device (Axis) (5) and a vacuum pump (6), a plasma deposition unit (10) is provided between the reaction chamber (1) and the filter unit (3) By removing unreacted gas or reaction by-products, which are foreign matters in the exhaust gas, foreign matters do not adhere to the wafer in the back stream, and a butterfly valve inside the air valve 5 which is an automatic pressure control device (not shown) It is possible to prevent the occurrence of errors occurring when attached to the pump and deterioration of the pump 6 caused when foreign matter is attached to the pump (6).
Description
제1도는 종래의 일반적인 저압화학기상증착장치의 개략 구조도.1 is a schematic structural diagram of a conventional general low pressure chemical vapor deposition apparatus.
제2도는 본 고안에 의한 저압화학기상증착장치의 개략 구조도.2 is a schematic structural diagram of a low pressure chemical vapor deposition apparatus according to the present invention.
제3도는 본 고안에 의한 플라즈마증착기의 상세도.3 is a detailed view of a plasma deposition machine according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 반응실 2 : 펌핑라인1: reaction chamber 2: pumping line
3 : 필터부 4 : 에어밸브3: filter part 4: air valve
5 : 에이피시밸브 6 : 펌프5: Valve 6: Pump
10 ; 플라즈마증착기10; Plasma Evaporator
본 고안은 저압화학기상증착장치에 관한 것으로, 특히 배기라인에 이물질제거수단을 설치하여 증착시 발생한 이물질이 백스트림에 의해 웨이퍼를 오염시키거나, 펌프나 에이피시밸브에 도달하여 성능을 저하시키는 것을 방지하고 다운타임을 줄일 수 있도록 한 반도체 저압화학기상증착장치에 관한 것이다.The present invention relates to a low pressure chemical vapor deposition apparatus, and in particular, by installing a foreign material removal means in the exhaust line, foreign matters generated during deposition contaminate the wafer by the backstream, or reach a pump or an API valve and degrade the performance. The present invention relates to a semiconductor low pressure chemical vapor deposition apparatus capable of preventing and reducing downtime.
종래의 저압화학기상증착장치가 제1도에 도시되어 있는 바, 이를 간단히 살펴보면 다음과 같다.A conventional low pressure chemical vapor deposition apparatus is shown in FIG. 1, which is briefly described as follows.
반응가스가 투입되어 증착이 이루어지는 반응실(1)과, 이 반응실의 하단부 외측에 설치되어 펌핑라인(2)을 통과하는 배기가스를 걸러주는 필터부(3)와, 필터부(3)를 통과한 배기가스의 동작과 미동작시의 개폐를 조절하는 에어밸브(4)와, 그 하단에 자동으로 압력을 조절하는 에이피시밸브(5) 및 배기를 위한 펌프(6)가 연결 설치된 구조로 되어 있다.The reaction chamber 1 into which the reaction gas is deposited and deposited, the filter unit 3 installed outside the lower end of the reaction chamber to filter the exhaust gas passing through the pumping line 2, and the filter unit 3 Air valve (4) for controlling the opening and closing of the exhaust gas passing through and non-operation, and the air valve (4) for automatically adjusting the pressure at the lower end connected to the pump 6 for exhaust structure It is.
상기와 같이 구성된 일반적인 저압화학기상증착장치에서는 기체상태의 반응가스를 반응실(1)내에 투입하며, 투입된 반응실(1)내의 반응가스는 저압 진공상태를 유지한 반응실(1)내에서 웨이퍼의 증착이 진행되고, 반응 후의 배기가스는 펌프(6)에 의해 장치의 바깥쪽으로 배출되는데, 여기서 필터부(3)는 배기가스를 에이피시밸브(5)나 펌프(6)에 도달하기 전에 걸러주고, 에어밸브(4)는 배기가스의 배기상태와 미배기상태시 개폐를 조절하며, 에이피시밸브(5)는 자동으로 압력을 조절하는 역할을 하게 된다.In the general low pressure chemical vapor deposition apparatus configured as described above, a gaseous reaction gas is introduced into the reaction chamber 1, and the reaction gas in the introduced reaction chamber 1 is a wafer in the reaction chamber 1 maintaining a low pressure vacuum. Deposition proceeds, and the exhaust gas after the reaction is discharged to the outside of the apparatus by the pump 6, where the filter part 3 filters the exhaust gas before it reaches the avalve valve 5 or the pump 6; In addition, the air valve (4) controls the opening and closing in the exhaust state and the non-exhaust state of the exhaust gas, the fish valve (5) serves to automatically adjust the pressure.
그러나, 상기와 같은 종래의 저압화학기상증착장치는 반응실(1)에서 나오는 배기가스 중의 이물질들인 미반응가스나 반응부산물들이 펌핑라인(3)의 내부벽에 부착되어 있어 백스트림(Back Stream)발생시 제품인 웨이퍼에 이물질이 부착될 수 있으며, 또한 상기 이물질이 배기펌프(5)에 부착되어 성능저하 및 메인터낸스 주기를 짧게 하거나, 자동압력 조절장치인 에이피시밸브(4)내의 버터플라이밸브(도시되어 있지 않음)에 부착되어 공정압력 조절을 어렵게함으로써 정상적인 공정이 이루어지지 않는 문제점이 발생한다.However, in the conventional low pressure chemical vapor deposition apparatus as described above, when unreacted gas or reaction by-products, which are foreign substances in the exhaust gas from the reaction chamber 1, are attached to the inner wall of the pumping line 3, a back stream occurs. The foreign matter may be attached to the wafer, which is a product, and the foreign matter may be attached to the exhaust pump 5 to shorten the performance degradation and maintenance cycle, or to operate the butterfly valve in the fish valve 4 which is an automatic pressure regulating device. It is difficult to control the process pressure because it is attached to the non-standard).
이를 감안하여 안출한 본 고안의 목적은 배기가스중의 이물질들을 제거하기 위한 이물질제거수단을 설치하여 이물질들을 제거함으로써 백스트림(Back Stream)시 이물질들이 웨이퍼에 묻지 않도록 하고, 장비의 다운타임(Down Time) 감소에 적합하도록 한 저압화학기상증착장치를 제공함에 있다.In view of this, the object of the present invention is to install a foreign material removal means for removing foreign substances in exhaust gas so that the foreign substances are removed from the back stream so that the foreign substances do not adhere to the wafer and the down time of the equipment To provide a low pressure chemical vapor deposition apparatus suitable for reducing the time.
상기와 같은 본 고안의 목적을 달성하기 위하여, 가스를 투입하고 진공상태에서 웨이퍼를 증착시키기 위한 반응실과, 상기 반응실에서 나오는 배기가스를 걸러주는 필터부와, 필터부를 통과한 배기가스의 배기를 조절하는 에어밸브와, 반응실내의 압력을 자동으로 조절하는 에이피시밸브 및 반응실내를 진공상태로 만들기 위한 진공펌프로 이루어진 저압화학기상증착장치를 구성함에 있어서, 상기의 반응실과 필터부사이의 펌핑라인 상에 반응실에서 나오는 배기가스 중의 이물질인 미반응가스와 반응부산물들을 포집하여 제거하기 위한 플라즈마증착기를 설치한 것을 특징으로 하는 저압화학기상증착장치가 제공된다.In order to achieve the object of the present invention as described above, the reaction chamber for injecting the gas and depositing the wafer in a vacuum state, the filter unit for filtering the exhaust gas from the reaction chamber, and the exhaust gas through the filter unit A pumping line between the reaction chamber and the filter part in the low pressure chemical vapor deposition apparatus comprising the air valve to be controlled, the apex valve to automatically adjust the pressure in the reaction chamber, and a vacuum pump to vacuum the reaction chamber. A low pressure chemical vapor deposition apparatus is provided in which a plasma vapor deposition apparatus is installed to collect and remove unreacted gases and reaction by-products, which are foreign substances in the exhaust gas from the reaction chamber.
이하, 상기한 바와 같은 본 고안에 의한 저압화학기상증착장치를 첨부도면에 의해 보다 상세히 설명한다.Hereinafter, the low pressure chemical vapor deposition apparatus according to the present invention as described above will be described in more detail by the accompanying drawings.
첨부한 제2도는 본 고안에 의한 저압화학기상증착장치의 개략 구조도로서, 이에 도시한 바와같이, 본 고안을 이루는 기본구조, 즉 반응가스에 의해 증착이 이루어지는 반응실(1)과, 상기 반응실(1)에서 나오는 배기가스를 걸러주는 콜드트랙과 필터로 구성된 필터부(3)와, 필터부(3)를 통과한 배기가스의 배기시 개폐를 조절하는 에어밸브(4)와, 반응실(1)내의 압력을 자동으로 조절하는 에이피시밸브(5) 및 반응실(1)의 내부를 진공상태로 만들기 위한 펌퍼(6)로 구성된 기본구조는 종래와 같다.2 is a schematic structural diagram of a low pressure chemical vapor deposition apparatus according to the present invention, and as shown therein, a reaction chamber (1) in which deposition is performed by a basic structure constituting the present invention, that is, a reaction gas, and the reaction chamber (1) a filter section (3) consisting of a cold track and a filter for filtering the exhaust gas from the exhaust gas, an air valve (4) for controlling the opening and closing of exhaust gas passing through the filter section (3), and a reaction chamber ( 1) The basic structure is composed of the valve (5) for automatically adjusting the pressure in the inside and the pump (6) for making the interior of the reaction chamber (1) in a vacuum state.
여기에, 본고안은 반응실(1)과 필터부(3) 사이의 펌핑라인(2) 상에 플라즈마증착기(10)를 설치하여 배기가스중의 이물질들을 제거할 수 있도록 구성한 것을 특징으로 하고 있다.Here, the present invention is characterized in that the plasma deposition unit 10 is installed on the pumping line 2 between the reaction chamber 1 and the filter unit 3 to remove foreign substances in the exhaust gas. .
제3도는 본 고안에 의한 플라즈마증착기의 상세도로써, 장비의 내측에 착·탈가능하게 복수개의 서브스트레이트(11)가 설치되어 있고, 통상적인 플라즈마 발생원리인 RF 파워와 RF 바이아스를 인가하여 이물질들이 서브스트레이트(11)에 증착될 수 있도록 구성하였다.3 is a detailed view of the plasma evaporator according to the present invention, and a plurality of substrates 11 are attached to and detached from the inside of the equipment, and RF power and RF vias, which are common principles of plasma generation, are applied. The foreign material was configured to be deposited on the substrate (11).
상기와 같이 구성된 본 고안에 의한 저압화학기상증착장치의 기본작용을 설명하면 다음과 같다.Referring to the basic operation of the low pressure chemical vapor deposition apparatus according to the present invention configured as described above are as follows.
반응실(1)내로 반응가스가 투입되고 저압인 상태의 반응실(1)내에서 웨이퍼의 증착이 이루어지며, 반응이 끝난 배기가스가 펌핑라인(2)을 통해서 배기되며 플라즈마증착기(10)를 통과하게 되는데, 이때 플라즈마증착기(10)의 내측을 통과하는 반응부산물 및 배기가스 중의 이물질들은 통상적인 플라즈마 발생원리에 의하여 동작되는 플라즈마증착기(10)에 의하여 서브스트레이트(11)에 증착되고, 이와 같이 이물질들이 증착된 서브스트레이트(11)들은 교체주기를 정하여 제거하거나 세정하여 재사용하게 된다. 그리고 상기 플라즈마증착기(10)를 통과한 배기가스는 필터부(3)를 거쳐 에어밸브(4)에 의해 배기량이 조절되면서, 자동으로 압력이 조절되는 에이피시밸브(5)를 통하여 펌프(6)에 의해 밖으로 배출되는 것이다.The reaction gas is introduced into the reaction chamber 1 and the deposition of the wafer is performed in the reaction chamber 1 at a low pressure state. The exhaust gas after the reaction is exhausted through the pumping line 2 and the plasma vapor deposition machine 10 is removed. In this case, foreign matters in the reaction by-products and the exhaust gas passing through the inside of the plasma deposition apparatus 10 are deposited on the substrate 11 by the plasma deposition apparatus 10 operated by the conventional plasma generation principle. Substrates 11 on which foreign matters are deposited are removed or cleaned and reused by setting a replacement cycle. In addition, the exhaust gas passing through the plasma vapor deposition machine 10 passes through the filter part 3, and the exhaust gas is regulated by the air valve 4, and the pump 6 is automatically controlled through the pressure valve 5. Will be discharged out by.
이상에서 설명한 바와 같이, 본 고안에 의한 저압화학기상증착장치는 반응실에서 나오는 배가가스중의 이물질들을 플라즈마증착기에서 제거함으로써 백스트림(Back Stream)시 웨이퍼에 이물질이 묻지 않도록 할 수 있고, 자동압력조절장치인 에이피시밸브 내부의 버터플라이밸브에 이물질이 부착되어 생기는 에러발생과 펌프에 부착될시에 생기는 펌프의 성능저하를 방지하여 장비의 메인터낸스 주기를 연장할 수 있다.As described above, the low pressure chemical vapor deposition apparatus according to the present invention can remove foreign substances in the doubling gas from the reaction chamber in the plasma deposition apparatus so that foreign substances do not get on the wafer during the back stream, and the automatic pressure The maintenance period of the equipment can be extended by preventing errors caused by foreign matters attached to the butterfly valve inside the control valve, which is a regulating device, and deterioration of the pump caused when attached to the pump.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940039576U KR0128230Y1 (en) | 1994-12-31 | 1994-12-31 | Low Pressure Chemical Vapor Deposition Equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940039576U KR0128230Y1 (en) | 1994-12-31 | 1994-12-31 | Low Pressure Chemical Vapor Deposition Equipment |
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| KR960025282U KR960025282U (en) | 1996-07-22 |
| KR0128230Y1 true KR0128230Y1 (en) | 1998-12-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100500430B1 (en) * | 2002-12-06 | 2005-07-12 | 주식회사 피에스엠 | Atmospheric pressure plasma processing apparatus and its process by gas suction method |
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1994
- 1994-12-31 KR KR2019940039576U patent/KR0128230Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100500430B1 (en) * | 2002-12-06 | 2005-07-12 | 주식회사 피에스엠 | Atmospheric pressure plasma processing apparatus and its process by gas suction method |
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| Publication number | Publication date |
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| KR960025282U (en) | 1996-07-22 |
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