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JPWO2023095237A1 - - Google Patents

Info

Publication number
JPWO2023095237A1
JPWO2023095237A1 JP2023563404A JP2023563404A JPWO2023095237A1 JP WO2023095237 A1 JPWO2023095237 A1 JP WO2023095237A1 JP 2023563404 A JP2023563404 A JP 2023563404A JP 2023563404 A JP2023563404 A JP 2023563404A JP WO2023095237 A1 JPWO2023095237 A1 JP WO2023095237A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023563404A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023095237A1 publication Critical patent/JPWO2023095237A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/061Manufacture or treatment of FETs having Schottky gates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/40FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
JP2023563404A 2021-11-25 2021-11-25 Pending JPWO2023095237A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/043160 WO2023095237A1 (en) 2021-11-25 2021-11-25 Field effect transistor and method for producing same

Publications (1)

Publication Number Publication Date
JPWO2023095237A1 true JPWO2023095237A1 (en) 2023-06-01

Family

ID=86539114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023563404A Pending JPWO2023095237A1 (en) 2021-11-25 2021-11-25

Country Status (2)

Country Link
JP (1) JPWO2023095237A1 (en)
WO (1) WO2023095237A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012248563A (en) * 2011-05-25 2012-12-13 Nippon Telegr & Teleph Corp <Ntt> Field-effect transistor
JP7069584B2 (en) * 2017-07-21 2022-05-18 住友電気工業株式会社 Manufacturing method for board products
JP6984578B2 (en) * 2018-11-29 2021-12-22 日本電信電話株式会社 How to make a transistor
JP7092051B2 (en) * 2019-01-18 2022-06-28 日本電信電話株式会社 How to make a field effect transistor

Also Published As

Publication number Publication date
WO2023095237A1 (en) 2023-06-01

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