[go: up one dir, main page]

JPWO2020195324A1 - - Google Patents

Info

Publication number
JPWO2020195324A1
JPWO2020195324A1 JP2021508249A JP2021508249A JPWO2020195324A1 JP WO2020195324 A1 JPWO2020195324 A1 JP WO2020195324A1 JP 2021508249 A JP2021508249 A JP 2021508249A JP 2021508249 A JP2021508249 A JP 2021508249A JP WO2020195324 A1 JPWO2020195324 A1 JP WO2020195324A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021508249A
Other languages
Japanese (ja)
Other versions
JP7190555B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020195324A1 publication Critical patent/JPWO2020195324A1/ja
Application granted granted Critical
Publication of JP7190555B2 publication Critical patent/JP7190555B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP2021508249A 2019-03-28 2020-02-17 Solar cell manufacturing method Active JP7190555B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019062652 2019-03-28
JP2019062652 2019-03-28
PCT/JP2020/006029 WO2020195324A1 (en) 2019-03-28 2020-02-17 Solar cell manufacturing method

Publications (2)

Publication Number Publication Date
JPWO2020195324A1 true JPWO2020195324A1 (en) 2020-10-01
JP7190555B2 JP7190555B2 (en) 2022-12-15

Family

ID=72608804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021508249A Active JP7190555B2 (en) 2019-03-28 2020-02-17 Solar cell manufacturing method

Country Status (3)

Country Link
JP (1) JP7190555B2 (en)
CN (1) CN113632241B (en)
WO (1) WO2020195324A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7597548B2 (en) * 2020-10-13 2024-12-10 株式会社カネカ Solar Cell

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233484A (en) * 1998-02-12 1999-08-27 Sanyo Electric Co Ltd Manufacture of rugged substrate
JP2006286821A (en) * 2005-03-31 2006-10-19 Sanyo Electric Co Ltd Etching method of crystal system semiconductor device
CN201473591U (en) * 2009-07-22 2010-05-19 吴东升 Etch cleaning tank
JP2011077064A (en) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd Substrate treatment apparatus
JP2012178500A (en) * 2011-02-28 2012-09-13 Mitsubishi Electric Corp Wet etching method and wet etching apparatus
JP2014075526A (en) * 2012-10-05 2014-04-24 Sharp Corp Photoelectric conversion element and photoelectric conversion element manufacturing method
CN104037257A (en) * 2013-03-08 2014-09-10 北京北方微电子基地设备工艺研究中心有限责任公司 Solar energy battery and manufacture method thereof, and single-surface polishing device
CN203846108U (en) * 2014-03-26 2014-09-24 上饶光电高科技有限公司 Device for solving circular bubbling of etching groove of wet process etching machine
JP2018163999A (en) * 2017-03-27 2018-10-18 国立大学法人福島大学 Solar cell and method for manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015121636A1 (en) * 2015-12-11 2017-06-14 Nexwafe Gmbh Device and method for one-sided etching of a semiconductor layer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233484A (en) * 1998-02-12 1999-08-27 Sanyo Electric Co Ltd Manufacture of rugged substrate
JP2006286821A (en) * 2005-03-31 2006-10-19 Sanyo Electric Co Ltd Etching method of crystal system semiconductor device
CN201473591U (en) * 2009-07-22 2010-05-19 吴东升 Etch cleaning tank
JP2011077064A (en) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd Substrate treatment apparatus
JP2012178500A (en) * 2011-02-28 2012-09-13 Mitsubishi Electric Corp Wet etching method and wet etching apparatus
JP2014075526A (en) * 2012-10-05 2014-04-24 Sharp Corp Photoelectric conversion element and photoelectric conversion element manufacturing method
CN104037257A (en) * 2013-03-08 2014-09-10 北京北方微电子基地设备工艺研究中心有限责任公司 Solar energy battery and manufacture method thereof, and single-surface polishing device
CN203846108U (en) * 2014-03-26 2014-09-24 上饶光电高科技有限公司 Device for solving circular bubbling of etching groove of wet process etching machine
JP2018163999A (en) * 2017-03-27 2018-10-18 国立大学法人福島大学 Solar cell and method for manufacturing the same

Also Published As

Publication number Publication date
CN113632241A (en) 2021-11-09
JP7190555B2 (en) 2022-12-15
CN113632241B (en) 2024-03-15
WO2020195324A1 (en) 2020-10-01

Similar Documents

Publication Publication Date Title
BR112019017762A2 (en)
BR112021017339A2 (en)
BR112021018450A2 (en)
BR112021017637A2 (en)
BR112021017892A2 (en)
BR112019016141A2 (en)
BR112021017939A2 (en)
BR112021017738A2 (en)
BR112021017782A2 (en)
BR112021018452A2 (en)
BR112021017728A2 (en)
BR112019016142A2 (en)
BR112021016821A2 (en)
BR112021017234A2 (en)
BR112021018168A2 (en)
BR112021017703A2 (en)
BR112021017732A2 (en)
BR112021018250A2 (en)
BR112021017355A2 (en)
BR112021018093A2 (en)
BR112021018102A2 (en)
BR112021017173A2 (en)
BR112021018584A2 (en)
BR112021017083A2 (en)
BR112021017949A2 (en)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210916

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220531

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220729

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221115

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221205

R150 Certificate of patent or registration of utility model

Ref document number: 7190555

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150