JPWO2019077926A1 - Dual RF tag - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a dual RF tag which does not require a switch. SOLUTION: A first inductor pattern 250, an IC chip 500, a second inductor pattern 260, a first insulating base material 310, a first radiation element part 210, a second radiation element part 220, and a first radiation. The first radiating element portion 210 includes a ground element portion 400 arranged so that the element portion 210 and the second radiating element portion 220 are electrostatically coupled to each other, and a second insulating base material 320. The peripheral length is different from 220, the first inductor pattern 250 is arranged so as to be inductively coupled to the second inductor pattern 260, and the second inductor pattern 260 and the ground element portion 400 are electrically connected. .. [Selection diagram] Fig. 1

Description

The present invention relates to dual RF tags.

For example, in Patent Document 1 (Japanese Patent Laid-Open No. 2017-501619), the antenna configuration is the first in the first frequency band depending on the switch having the open state and the closed state and the switch being in the open state. Includes a first antenna that operates as the active drive element of the device and a second antenna that operates as the second active drive element in the first frequency band depending on the open state of the switch. The closed state operably couples the first impedance between the first antenna and the radio frequency ground, and allows the second impedance to operate between the second antenna and the radio frequency ground. By coupling, the first antenna and the second antenna are configured to operate in a second frequency band different from the first frequency band. A method is disclosed in which the first antenna functions as a non-feeding element in the second frequency band and the second antenna functions as an active drive type element in the second frequency band.

The apparatus described in Patent Document 1 is a device as a first active drive type antenna element in a first frequency band according to at least one switch having an open state and a closed state and at least one switch being in the open state. A first antenna configured to operate and a first configured to operate as a second active driven antenna element in the first frequency band depending on the open state of at least one switch. A device comprising two antennas, the closed state by operably coupling a first impedance between the first antenna and the radio frequency ground, and by operably coupling the second antenna to the radio frequency ground. By operably coupling the second antenna with the antenna, the first antenna and the second antenna are configured to operate in a second frequency band different from the first frequency band.

Special Table 2017-501619

As described above, the dual RF tag has a configuration that requires at least one switch having an open state and a closed state, as described in Patent Document 1.
A main object of the present invention is to provide a dual RF tag that does not require a switch.
Another object of the present invention is to provide a dual RF tag that does not require a switch, improves communication sensitivity, and can transmit and receive small and omnidirectional radio waves.

(1)
The dual RF tag according to one aspect is arranged between the first inductor pattern, the IC chip mounted on the first inductor pattern, the second inductor pattern, and the first inductor pattern and the second inductor pattern. The 1 insulating base material, the 1st radiation element part and the 2nd radiation element part electrically connected to the 2nd inductor pattern, and the 1st radiation element part and the 2nd radiation element part are electrostatically coupled, respectively. The ground element portion arranged, the first radiation element portion and the second inductor pattern, and the second insulating base material disposed between the second radiation element portion and the ground element portion are included. The first radiating element portion has a different peripheral length from the second radiating element, the first inductor pattern is arranged so as to be inductively coupled to the second inductor pattern, and the second inductor pattern and the ground element portion are electrically connected. It is connected.

The first radiation element unit can form an antenna corresponding to one frequency, and the second radiation element unit can form an antenna corresponding to another frequency. As a result, a dual RF tag that does not require a switch can be obtained. In particular, by setting one frequency as the European frequency and the other frequency as the US or Japanese frequency, a dual RF tag that can be used worldwide can be obtained.
Since the first inductor pattern is arranged so as to inductively couple with the second inductor pattern, it is possible to make a dual RF tag that is compact and has high communication sensitivity.

(2)
The dual RF tag according to the other aspect is a dual RF tag according to the invention of one aspect, in which the first radiation element portion, the second inductor pattern, and the second radiation element portion are arranged in a straight line in this order. It may be.

In this case, the phase difference is 90 degrees and -90 degrees due to the relationship between the reactance of the capacitor and the reactance of the impedance between the first radiation element and the second radiation element, so they are arranged in parallel. Is preferable.
As a result, it is possible to make a dual RF tag that can support a plurality of tuning bands.

(3)
The dual RF tag according to the third invention is a dual RF tag according to one aspect or the second invention, in which the second inductor pattern and the ground element portion are electrically connected via a through hole. It may be there.

Since the second inductor pattern and the ground element portion are electrically connected via the through holes, wiring can be reduced and noise can be suppressed. In addition, the manufacture of dual RF tags can be simplified.

(4)
The dual RF tag according to the fourth invention is a dual RF tag according to the third aspect to the third invention, in which the first inductor pattern and the second inductor pattern are electrically connected via through holes. It may be.

By electrically connecting the first inductor pattern and the second inductor pattern through the through holes, the IC chip can be operated stably.

(5)
The dual RF tag according to the fifth invention is the dual RF tag according to the fourth aspect to the fourth aspect, and the mutual inductance due to inductive coupling may be 15 nH or more and 30 nH or less.

The mutual inductance of the first inductor pattern and the second inductor pattern is preferably set to 15 nH or more and 30 nH or less according to the internal equivalent capacitance of the IC chip to be used.
By doing so, the signal of the UHF band RFID is effectively amplified, so that the loss can be reduced.

(6)
In the dual RF tag according to the sixth invention, in the dual RF tag according to any one of the first aspect to the fifth invention, the first radiation element portion and the second radiation element portion and the ground element portion are arranged in parallel. You can.

As a result, the first radiating element portion and the ground element portion and the second radiating element portion and the ground element portion can be stably electrostatically coupled to each other.

(7)
The dual RF tag according to the seventh invention is the dual RF tag according to any one of the first aspect to the sixth invention, in which the material of the first insulating base material and / or the second insulating base material may be ceramic. ..

By using a ceramic having a high dielectric constant for the first insulating base material and / or the second insulating base material, the dual RF tag can be miniaturized. The dielectric constant ε of the first insulating base material and / or the second insulating base material is preferably 1.0 or more and 7.0 or less, and more preferably 5.0 or more and 6.5 or less. ..

(8)
The dual RF tag according to the eighth aspect of the invention may further include an adhesive layer for sticking to a metal member on the back surface of the ground element portion in the dual RF tag according to any one of the first aspect to the seventh invention.

In this case, the metal member can be used as an antenna by attaching the dual RF tag to the metal member. As a result, the communication sensitivity can be dramatically improved, and omnidirectional radio waves can be transmitted and received.

(9)
The dual RF tag according to the ninth invention is the dual RF tag according to any one of the first aspect to the eighth invention, wherein the first radiation element portion has a wavelength λ on the low frequency side (near 860 MHz) of the UHF band RFID frequency. On the other hand, it is designed to correspond to any one of λ / 4, λ / 2, 3λ / 4, 5λ / 8, and the second radiation element portion is on the high frequency side (950 MHz to 960 MHz) of the UHF band RFID frequency. It may be designed to correspond to any one of λ / 4, λ / 2, 3λ / 4, and 5λ / 8 with respect to the wavelength λ of (near).

In this case, the radiation element length corresponding to the frequency can be set. As a result, the communication sensitivity can be dramatically improved, and omnidirectional radio waves can be transmitted and received.
It is preferable that the first radiation element portion and the second radiation element portion have their respective ambient length measurements with respect to the wavelength λ / 2 of the target frequency.

It is a schematic perspective view which shows an example of the dual RF tag which concerns on this Embodiment. FIG. 1 is a cross-sectional view taken along the line AA'of FIG. It is a schematic diagram which shows an example of the equivalent circuit of the dual RF tag shown in FIG. It is a schematic perspective view which shows another example of the dual RF tag which concerns on this embodiment. It is a schematic diagram which shows an example of the equivalent circuit of the dual RF tag shown in FIG. It is a figure which shows an example of the reading distance with respect to the frequency of a dual RF tag. It is the figure which glued the dual RF tag on the conductive member. This is an equivalent circuit when the dual RF tag is bonded on the conductive member.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same parts are designated by the same reference numerals. Moreover, in the case of the same code, their names and functions are also the same. Therefore, the detailed description of them will not be repeated.

[Implementation]
FIG. 1 is a schematic perspective view showing an example of a dual RF tag according to the present embodiment, and FIG. 2 is a sectional view taken along line AA'of FIG. FIG. 3 is a schematic diagram showing an example of the equivalent circuit of the dual RF tag shown in FIG.

(Dual RF tag 100)
As shown in FIGS. 1, 2 and 3, the dual RF tag 100 includes a low-band radiating element section 210, a high-band radiating element section 220, a conductive section 230, an inductor pattern section 250, a balance coil section 260, and a first insulating group. The material 310, the second insulating base material 320, and the ground element portion 400 are included. Further, an IC chip 500 is arranged in the inductor pattern portion 250 of the dual RF tag 100.

As shown in FIGS. 1, 2 and 3, the dual RF tag 100 has a rectangular parallelepiped shape. The inductor pattern portion 250 and the IC chip 500 are arranged on the same plane, the surface on which the inductor pattern portion 250 and the IC chip 500 are arranged is the upper surface 610, and the high band radiation element portion 220, the balance coil portion 260, and the low band radiation element portion are arranged. The 210s are also arranged on the same plane, the surface on which they are arranged is an intermediate surface 620, and the surface on which the ground element portion 400 is arranged is a bottom surface 630.

(Low-band radiating element section 210 and high-band radiating element section 220)
A low-band radiation element portion 210 and a high-band radiation element portion 220 are formed on the intermediate surface 620 of the dual RF tag 100, and are connected to the balance coil portion 260, respectively.
As shown in FIG. 2, the low-band radiation element portion 210, the balance coil portion 260, and the high-band radiation element portion 220 are arranged in a straight line on the intermediate surface 620 in this order. In this case, the phase difference between the low-band radiating element section 210 and the high-band radiating element section 220 is 90 degrees or −90 degrees due to the relationship between the reactance of the capacitor and the impedance of the capacitor. It is preferable that the portion 210 and the high band radiating element portion 220 are arranged in a straight line. As a result, it is possible to make a dual RF tag that can support a plurality of tuning bands.

(Inductor pattern section 250 and balance coil section 260)
An inductor pattern portion 250 is formed on the surface 610, and a balance coil portion 260 is formed on the intermediate surface 620. The inductor pattern portion 250 and the balance coil portion 260 are arranged so as to be inductively coupled.
Specifically, the distance between the inductor pattern portion 250 and the balance coil portion 260 is preferably 0.01 mm or more and 0.3 mm or less, and more preferably 0.05 mm or more and 0.2 mm or less. Further, the dielectric constant ε of the first insulating base material is preferably 1.0 or more and 7.0 or less, and more preferably 5.0 or more and 6.5 or less.
The balanced coil is also called a balanced coil.

(Grand element part 400)
As shown in FIG. 1, a ground element portion 400 is formed on the bottom surface 630 of the dual RF tag 100. Further, an adhesive layer 450 (FIG. 7) for sticking to the metal member may be further included on the back surface of the ground element portion.

In the present embodiment, the low band radiating element portion 210, the high band radiating element portion 220, the conductive portion 230, the inductor pattern portion 250, the balance coil portion 260, and the ground element portion 400 are made of a metal thin film of aluminum. The thickness of the thin film in the present embodiment is 1 μm or more and 100 μm or less, preferably 5 μm or more and 35 μm or less.

Further, the low-band radiation element unit 210, the high-band radiation element unit 220, the conduction unit 230, the inductor pattern unit 250, the balance coil unit 260, and the ground element unit 400 can be formed by a method such as etching or pattern printing.

As shown in FIGS. 1 and 2, the low-band radiating element portion 210 and the high-band radiating element portion 220 mainly have a rectangular shape of a flat plate. The area of the high-band radiating element portion 220 in the present embodiment is smaller than the area of the low-band radiating element portion 210.

The total length of the peripherals 210a, ~, and 210d forming the low-band radiation element portion 210 is referred to as a value S1. The value S1 of the low-band radiation element unit 210 is any of λ / 4, λ / 2, 3λ / 4, and 5λ / 8 when the wavelength λ (lambda) on the low frequency side (near 860 MHz) of the UHF band RFID frequency is used. It is designed to fall under one of these.

The value S1 is more preferably half the length of the wavelength λ of the frequency used.

Further, the total length of the sides 220a, to 220d forming the high band radiation element portion 220 is referred to as a value S2. The value S2 of the high band radiation element unit 220 is λ / 4, λ / 2, 3λ / 4, 5λ / when the wavelength λ (lambda) on the high frequency side (near 950 MHz to 960 MHz) of the UHF band RFID frequency is used. It is designed to correspond to any one of 8.

It is more preferable that S1 and S2 have a length of half the wavelength λ of the frequency used.

(First Insulating Base Material 310 and Second Insulating Base Material 320)
As shown in FIG. 1, a first insulating base material 310 is arranged between the inductor pattern portion 250 and the balance coil portion 260. Further, a second insulating base material 320 is arranged between the low band radiation element portion 210, the balance coil portion 260, the high band radiation element portion 220, and the ground element portion 400.
The first insulating base material 310 is formed on the entire surface of the facing portion between the upper surface 610 and the intermediate surface 620, and the second insulating base material 320 is formed on the entire surface of the facing portion between the intermediate surface 620 and the bottom surface 630. The thickness of the first insulating base material 310 and the second insulating base material 320 depends on the dielectric constant of the insulating base material, but is preferably 0.01 mm or more and 0.3 mm or less, and 0.05 mm or more and 0.2 mm, respectively. The following is more preferable.

The material of the first insulating base material 310 and / or the second insulating base material 320 may be ceramic. As a result, the dielectric constant can be increased, so that the dual RF tag can be made smaller. The dielectric constant ε of the second insulating base material is preferably 1.0 or more and 7.0 or less, and more preferably 5.0 or more and 6.5 or less.
In the present embodiment, the material is made of ceramic, but the present invention is not limited to this, and any insulator may be used, and has insulating properties such as polyethylene, polyimide, expanded polystyrene, and thin foam (bola). Other materials or foams may be used.
Further, the material of the first insulating base material and / or the second insulating base material may be expanded polystyrene. As a result, the dielectric constant can be lowered, so that the communication distance can be lengthened and a highly sensitive dual RF tag can be obtained.

(Conduction part 230)
In the present embodiment, a conductive portion 230 is provided between the balance coil portion 260 and the ground element portion 400, and the balance coil portion 260 is provided through a through hole 231 provided in the second insulating base material 320. And the ground element portion 400 are electrically connected to each other. The conductive portion 230 may be formed by using a conducting wire, solder, an aluminum thin film, a pin, a conductive paste, plating, or the like.
Since the balance coil portion 260 and the ground element portion 400 are electrically connected via the through hole 231, wiring can be reduced and noise can be suppressed. In addition, the manufacture of dual RF tags can be simplified.

Further, the inductor pattern portion 250 and the balance coil portion 260 may be electrically connected via a through hole 232 provided in the first insulating base material 310. The IC chip 500 can be operated stably by electrically connecting the inductor pattern portion 250 and the balance coil portion 260 via the through hole 232.

(IC chip 500)
As shown in FIG. 1, the IC chip 500 is mounted on the inductor pattern portion 250. The IC chip 500 is arranged on the upper surface side of the first insulating base material 310.

Specifically, the IC chip 500 according to the present embodiment operates based on the radio waves received by the low-band radiation element unit 210 or the high-band radiation element unit 220 of the dual RF tag 100. That is, the radio wave from the reader received by the low-band radiation element unit 210 or the high-band radiation element unit 220 is transmitted from the balance coil unit 260 to the inductor pattern unit 250 by inductive coupling to operate the IC chip 500.

The IC chip 500 first rectifies a part of the carrier wave transmitted from the reader, and the IC chip 500 itself generates a power supply voltage necessary for operation. Then, the IC chip 500 operates a non-volatile memory in which the logic circuit for control in the IC chip 500, the unique information of the product, and the like are stored by the generated power supply voltage.

Further, the IC chip 500 operates a communication circuit or the like for transmitting / receiving data to / from the reading device.

(Equivalent circuit of dual RF tag 100)
FIG. 3 is a schematic diagram showing an example of the equivalent circuit of the dual RF tag 100 shown in FIG.

As shown in FIG. 3, in the inductor pattern portion 250, the inductor L and the internal equivalent capacitance C (hereinafter, referred to as a capacitor C) of the IC chip 500 are connected in parallel to each other. The inductor L and the capacitor C form a resonance circuit that resonates in the frequency band of the radio wave transmitted from the reader.

Further, the low band radiation element portion 210 and the high band radiation element portion 220 are connected to the balance coil portion 260, and the balance coil portion 260 is connected to the ground element portion 400 via the conduction portion 230.

As a result, by providing the low-band radiation element unit 210 and the high-band radiation element unit 220, it is possible to form a dual RF tag 100 capable of receiving radio waves in two frequency bands.

Further, the balance coil unit 260 is inductively coupled to the inductor pattern unit 250, and the impedance of the balance coil unit 260 can be appropriately adjusted to match the impedance with respect to the inductor pattern unit 250.

The impedance Z of the inductor pattern portion 250 is given by the equation (1).
Z = jωL + 1 / (jωC), ω = 2πf ... (1)
However, Z: impedance (ohm) of the inductor pattern portion 250
j: Imaginary unit
ω: Angular frequency of radio waves transmitted from the reader (radians / second)
L: Inductance of balance coil unit 260 (Henry)
C: Internal equivalent capacity of IC chip 500 (Farad)
π: Pi
f: Frequency of radio waves transmitted from the reader (Hertz)

The peripheral length of the balance coil portion 260 and the like are adjusted so as to be equal to the impedance Z of the inductor pattern portion 260.

For example, when L = 12.5 nH (nano-henry), C = 1.4 pF (picofarad), and f = 920 MHz (megahertz), the impedance Z of the inductor pattern portion 260 is 50 Ω (ohm). In this case, if the impedance of the balance coil unit 260 is set to 50Ω, the impedances of the inductor pattern unit 260 and the balance coil unit 260 can be matched.

In this case, either one of the low-band radiating element section 210 and the high-band radiating element section 220 must satisfy ωL <1 / (ωC), and one of the low-band radiating element section 210 and the high-band radiating element section 220 of the other It is necessary to satisfy ωL> 1 / (ωC).

As a result, one of the low-band radiation element unit 210 and the high-band radiation element unit 220 is arranged at a position where the phase difference is Φ = 90 degrees, with reference to the location where the IC chip 500 of the inductor pattern unit 250 is arranged. Further, with reference to the place where the IC chip 500 of the inductor pattern part 250 is arranged, either the low band radiation element part 210 or the high band radiation element part 220 is arranged at a position having a phase difference of Φ = −90 degrees.

In the present embodiment, the low-band radiation element portion 210 is arranged at a position of a phase difference of Φ = 90 degrees, and the high-band radiation element portion 220 is arranged at a position of a phase difference of Φ = −90 degrees, centering on the balance coil portion 260. Arranged.

As described above, by considering the equivalent capacitance C inside the IC chip 500, the resonance frequency f of the resonance circuit can be set accurately in the frequency band of the radio wave. As a result, the reading performance of the dual RF tag 100 can be improved. In addition, the power supply voltage generated by the IC chip 500 can be increased.

(Reading distance of dual RF tag 100)
FIG. 6 is a diagram showing an example of a reading distance with respect to the frequency of the dual RF tag 100 shown in FIG.

In FIG. 6, curve 620 is a plot of the reading distance for each frequency when the reader is placed on the upper surface 610 side of the dual RF tag 100, and curve 640 is a plot of the reader on the bottom surface of the dual RF tag 100. It is a plot of the reading distance when placed on the side of 630 for each frequency.
The unit of reading distance is meters (m), and the unit of frequency is megahertz (MHz).

As shown in FIG. 6, in the curve 620 and the curve 640, the reading distance is large near 860 MHz and 920 MHz. As a result, it can be seen that the dual RF tag 100 in the present embodiment can realize reading in a plurality of frequency bands even though the conventional frequency band changeover switch is not provided.

Further, it can be seen that the reading distance is sufficiently long even when the reading device is placed on the back surface 280 side, although the reading distance is slightly lower than that when the reading device is placed on the front surface 270 side. Therefore, it can be seen that the dual RF tag 100 is capable of receiving omnidirectional radio waves.

Specifically, when the dielectric constant ε of the first insulating base material and the second insulating base material is 1.5, the curve 620 is about 8 m and the curve 640 is about 6 m at a frequency of around 860 MHz. Further, in the vicinity of the frequency of 920 MHz, the curve 620 is about 11 m and the curve 640 is about 6 m. Even when the reading device is placed on the bottom surface 630 side in this way, reading is possible at a minimum of about 5 m.

As a result, the dual RF tag 100 can dramatically improve the communication sensitivity and receive omnidirectional radio waves even though the dual RF tag 100 is not provided with the conventional switch.

(Other examples of dual RF tags)
FIG. 4 is a schematic plan view showing another example of the RF tag antenna 100 according to the present embodiment, and FIG. 5 is a schematic view showing an example of an equivalent circuit of the dual RF tag 100 shown in FIG. Is. In the following, the points different from the RF tag antenna 100 according to the present embodiment will be described.

The dual RF tag 100 shown in FIGS. 4 and 5 has an inductor pattern portion 250 of the dual RF tag 100 connected to the ground. The inductor pattern portion 250 and the balance coil portion 260 are electrically connected to the ground element portion 400 via the through holes provided in the first insulating base material 310 and the second insulating base material 320. As a result, the IC chip can be operated more stably.

As described above, the dual RF tag 100 shown in FIGS. 4 and 5 is a dual RF tag, similarly to the dual RF tag 100 of FIGS. 1 to 4, although it is not provided with a conventional switch. Furthermore, it is possible to make a dual RF tag that is small and has high communication sensitivity.

(Conductive member 900)
By placing the dual RF tag 100 on the conductive member 900, the conductive member 900 can be used as a plate-shaped antenna having good sensitivity. FIG. 7 is a diagram in which the dual RF tag 100 is bonded onto the conductive member 900. FIG. 8 is an equivalent circuit when the dual RF tag 100 is bonded onto the conductive member 900.

An adhesive layer 450 is provided on the ground element portion 400 on the bottom surface 630 side of the dual RF tag 100, and the dual RF tag 100 is attached to the conductive member 900 via the electrically insulating adhesive layer 450.
As a result, as shown in FIG. 8, the conductive member 900 and the ground element portion 400 are capacitively coupled via the adhesive layer 450, so that the conductive member 900 can act as a plate-shaped antenna. Therefore, the dual RF tag 100, which is omnidirectional and has a long communication distance, can be used.

Examples of the adhesive layer 450 include an adhesive adhesive and a hot melt, and an adhesive adhesive is more preferable from the viewpoint of durability and capacitive coupling.

In the present embodiment, the dual RF tag 100 is capacitively coupled to the conductive member 900 via the adhesive layer 450, but the ground element portion 400 and the conductive member 900 are electrically connected to each other. May be good.

In this case, since there is no capacitive coupling via the adhesive layer 450, the conductive member 900 acts as an antenna together with the ground element portion 400, and the dual RF tag 100 which is omnidirectional and has a longer communication distance can be obtained. In addition, it is possible to eliminate variations in capacitance due to installation.

In the present embodiment, the case where the dual RF tag 100 is installed on the conductive member 900 has been illustrated, but the present invention is not limited to this, and the conductive member 900 is not particularly limited as long as it is a conductive plate made of metal.

For example, construction materials, containers, license plates, drums, steel plates, electrical and electronic equipment, electronic components, substrates, vehicles, ships and aircraft. When these main bodies have a conductive plate, the dual RF tag 100 may be directly installed, or the conductive plate may be separately installed on the main body.

For example, when the dual RF tag 100 is used in a vehicle, the dual RF tag 100 may be installed on the roof portion and the bonnet portion of the vehicle. Further, the vehicle is not limited to an automobile, and may be installed in a special vehicle such as a construction vehicle or an agricultural work vehicle, a motorcycle, a railroad, or the like, and a removable device (for example, a bucket of a hydraulic excavator) used integrally with the vehicle. The dual RF tag 100 may be installed in the portion).

When the dual RF tag 100 is used in the vehicle and the conductive member 900 is not used, the dual RF tag may be installed in the window portion of the vehicle.

As described above, in the dial RF tag 100, the low-band radiating element unit 210 can form an antenna corresponding to one frequency, and the high-band radiating element unit 220 can form an antenna corresponding to another frequency. Can be done.
As a result, it is possible to obtain a dual RF tag 100 that does not require a switch. In particular, by setting one frequency as the European frequency and the other frequency as the US or Japanese frequency, a dial RF tag 100 that can be used worldwide can be obtained.

Further, the low-band radiating element section 210 and the high-band radiating element section 220 have a phase difference of 90 degrees and −90 degrees due to the relationship between the reactance of the capacitor and the impedance, so that they are arranged in parallel. Is preferable.

Further, by attaching the dual RF tag 100 to the conductive member 900, the conductive member 900 can be used as an antenna. As a result, the communication sensitivity can be dramatically improved and omnidirectional radio waves can be received.

In addition, the radiation element length corresponding to the frequency can be set. As a result, the communication sensitivity can be dramatically improved and omnidirectional radio waves can be received.
Further, it is preferable to measure the perimeter of each of the low-band radiation element unit 210 and the high-band radiation element unit 220 for a plurality of target wavelengths λ / 2.

The first insulating base material 310 and the second insulating base material 320 enhance the durability of the dual RF tag 100, inductively couple the inductor pattern portion 250 and the balance coil portion 260, and further, the ground element portion 400 and the high band radiation element. A stable capacitor can be formed in the portion 220 and the low band radiation element portion 210.
Further, the positional relationship between the inductor pattern portion 250, the balance coil portion 260, the high band radiation element portion 220, the low band element portion 210, and the ground element portion 400 can be reliably maintained.

In the present invention, the dual RF tag 100 corresponds to the "dual RF tag", the low band radiation element unit 210 corresponds to the "first radiation element unit", and the high band radiation element unit 220 corresponds to the "second radiation". The ground element portion 400 corresponds to the "ground element portion", the inductor pattern portion 250 corresponds to the "first inductor pattern", and the balance coil portion 260 corresponds to the "second inductor pattern". The IC chip 500 corresponds to the "IC chip", the conductive member 900 corresponds to the "metal member", the adhesive layer 450 corresponds to the "adhesive layer", and the insulating base material 300 corresponds to ". Corresponds to "insulating substrate".

A preferred embodiment of the present invention is as described above, but the present invention is not limited thereto. It will be appreciated that various embodiments are made that do not deviate from the spirit and scope of the invention. Further, in the present embodiment, the actions and effects according to the constitution of the present invention are described, but these actions and effects are examples and do not limit the present invention.

100 Dual RF tag 210 Low band radiation element part 220 High band radiation element part 230 Conduction part 231 232 Through hole 250 Inductor pattern part 260 Balance coil part 300 1st insulation base material 320 2nd insulation base material 400 Ground element part 450 Adhesive layer 500 IC chip 610 Top surface 620 Intermediate surface 630 Bottom surface

Claims (9)

1st inductor pattern and
The IC chip mounted on the first inductor pattern and
2nd inductor pattern and
A first insulating base material disposed between the first inductor pattern and the second inductor pattern,
A first radiating element unit electrically connected to one end of the second inductor pattern,
A second radiating element portion electrically connected to the other end of the second inductor pattern,
A ground element portion arranged so that the first radiation element portion and the second radiation element portion are electrostatically coupled to each other, and
The first radiating element portion, the second inductor pattern, the second radiating element portion, and a second insulating base material disposed between the ground element portion are included.
The circumference of the first radiation element is different from that of the second radiation element.
The first inductor pattern is arranged so as to be inductively coupled to the second inductor pattern.
A dual RF tag in which the second inductor pattern and the ground element portion are electrically connected. The dual RF tag according to claim 1, wherein the first radiation element portion, the second inductor pattern, and the second radiation element portion are arranged in a straight line in this order. The dual RF tag according to claim 1 or 2, wherein the second inductor pattern and the ground element portion are electrically connected via a through hole. The dual RF tag according to any one of claims 1 to 3, wherein the first inductor pattern and the second inductor pattern are electrically connected via a through hole. The dual RF tag according to any one of claims 1 to 4, wherein the mutual inductance due to inductive coupling is 15 nH or more and 30 nH or less. The dual RF tag according to any one of claims 1 to 5, wherein the first radiation element portion, the second radiation element portion, and the ground element portion are arranged in parallel. The dual RF tag according to any one of claims 1 to 6, wherein the material of the first insulating base material and / or the second insulating base material is ceramic. The dual RF tag according to any one of claims 1 to 7, further comprising an adhesive layer for sticking to a metal member on the back surface of the ground element portion. The first radiation element portion corresponds to any one of λ / 4, λ / 2, 3λ / 4, and 5λ / 8 with respect to the wavelength λ on the low frequency side (near 860 MHz) of the UHF band RFID frequency. Designed to
The second radiation element unit is set to any one of λ / 4, λ / 2, 3λ / 4, and 5λ / 8 with respect to the wavelength λ on the high frequency side (near 950 MHz to 960 MHz) of the UHF band RFID frequency. The dual RF tag according to any one of claims 1 to 4, which is designed to be applicable.

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