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JPS649682A - Distributed feedback semiconductor laser - Google Patents

Distributed feedback semiconductor laser

Info

Publication number
JPS649682A
JPS649682A JP62165690A JP16569087A JPS649682A JP S649682 A JPS649682 A JP S649682A JP 62165690 A JP62165690 A JP 62165690A JP 16569087 A JP16569087 A JP 16569087A JP S649682 A JPS649682 A JP S649682A
Authority
JP
Japan
Prior art keywords
grooves
widths
width
groove
end part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62165690A
Other languages
Japanese (ja)
Inventor
Masayuki Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62165690A priority Critical patent/JPS649682A/en
Priority to DE8888305887T priority patent/DE3870996D1/en
Priority to EP88305887A priority patent/EP0297838B1/en
Priority to US07/213,948 priority patent/US4835788A/en
Publication of JPS649682A publication Critical patent/JPS649682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a phase-shift type DFB laser, from which no leakage current is generated and whose oscillation threshold current is low, by a method wherein the width of a mesa striped groove is made fine continuously at the disconnected part of the mesa striped groove, the width of a third groove is made narrower than the sum of the widths of first and second grooves and the width of the mesa striped groove and the widths of the second and third grooves are changed continuously at the connecting part of the grooves. CONSTITUTION:The forms of grooves 15-17 and a mesa striped groove 18 of a distributed feedback semiconductor laser are made narrow their widths in a tapered form at a mesa striped end part 19. The width of the groove 17 is made narrower than the sum of the widths of the grooves 15 and 16 and the width of the mesa striped groove 18 and the widths of the grooves 15-17 are changed gently in the vicinity of the end part 19. Thereby, a 111 A face does not appear almost in the vicinity of the end part 19 and the widths of the grooves 15-17 become much narrower than those of the grooves of the existing element. Therefore, the saturability degree of a melt for crystal growth in the grooves is increased, whereby a p-type InP current blocking layer 6 is crystal-grown in such a way as to cover all the surface of an n-type InP substrate 1 exposed at the end part 19.
JP62165690A 1987-07-01 1987-07-01 Distributed feedback semiconductor laser Pending JPS649682A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62165690A JPS649682A (en) 1987-07-01 1987-07-01 Distributed feedback semiconductor laser
DE8888305887T DE3870996D1 (en) 1987-07-01 1988-06-29 SEMICONDUCTOR LASER WITH DISTRIBUTED FEEDBACK.
EP88305887A EP0297838B1 (en) 1987-07-01 1988-06-29 A distributed feedback semiconductor laser
US07/213,948 US4835788A (en) 1987-07-01 1988-07-01 Distributed feedback semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165690A JPS649682A (en) 1987-07-01 1987-07-01 Distributed feedback semiconductor laser

Publications (1)

Publication Number Publication Date
JPS649682A true JPS649682A (en) 1989-01-12

Family

ID=15817191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165690A Pending JPS649682A (en) 1987-07-01 1987-07-01 Distributed feedback semiconductor laser

Country Status (4)

Country Link
US (1) US4835788A (en)
EP (1) EP0297838B1 (en)
JP (1) JPS649682A (en)
DE (1) DE3870996D1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177842A (en) * 1990-03-28 1993-01-12 Mitsuba Electric Manufacturing Co. Ltd. Apparatus for finishing surface of commutator of motor
JPH11233872A (en) * 1998-02-09 1999-08-27 Nippon Telegr & Teleph Corp <Ntt> Discrimination of semiconductor laser

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1313466C (en) * 1988-05-11 1993-02-09 Kenichi Kikuchi Image sensing apparatus having automatic focusing function of automatically matching focus in response to video signal
JP2686306B2 (en) * 1989-02-01 1997-12-08 三菱電機株式会社 Semiconductor laser device and manufacturing method thereof
DE3934998A1 (en) * 1989-10-20 1991-04-25 Standard Elektrik Lorenz Ag ELECTRIC WAVELENGTH ADJUSTABLE SEMICONDUCTOR LASER
JP3257034B2 (en) * 1992-06-03 2002-02-18 ソニー株式会社 Compound semiconductor device and method of manufacturing the same
JP2786063B2 (en) * 1992-08-11 1998-08-13 日本電気株式会社 Semiconductor light control device
JPH08116135A (en) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp Manufacture of waveguiding path integrated element and waveguiding path integrated element
CN100382399C (en) * 2004-11-11 2008-04-16 三菱电机株式会社 Semiconductor laser
KR100842277B1 (en) * 2006-12-07 2008-06-30 한국전자통신연구원 Reflective Semiconductor Optical Amplifiers and Super Luminous Diodes
CN110178275B (en) * 2017-01-19 2021-01-22 三菱电机株式会社 Semiconductor laser element and method for manufacturing semiconductor laser element

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140177A (en) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> Distributed feed-back type semiconductor laser
JPS59165481A (en) * 1983-03-10 1984-09-18 Nec Corp Distributed feedback type semiconductor laser
JPS59198786A (en) * 1983-04-26 1984-11-10 Nec Corp Distributed feedback type semiconductor laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0083697B1 (en) * 1981-10-19 1987-09-09 Nec Corporation Double channel planar buried heterostructure laser
US4751710A (en) * 1984-07-26 1988-06-14 Nec Corporation Semiconductor laser device
JPS61216383A (en) * 1985-03-20 1986-09-26 Nec Corp Distributed feedback semiconductor laser
US4839900A (en) * 1985-08-21 1989-06-13 Sharp Kabushiki Kaisha Buried type semiconductor laser device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140177A (en) * 1982-02-16 1983-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> Distributed feed-back type semiconductor laser
JPS59165481A (en) * 1983-03-10 1984-09-18 Nec Corp Distributed feedback type semiconductor laser
JPS59198786A (en) * 1983-04-26 1984-11-10 Nec Corp Distributed feedback type semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177842A (en) * 1990-03-28 1993-01-12 Mitsuba Electric Manufacturing Co. Ltd. Apparatus for finishing surface of commutator of motor
JPH11233872A (en) * 1998-02-09 1999-08-27 Nippon Telegr & Teleph Corp <Ntt> Discrimination of semiconductor laser

Also Published As

Publication number Publication date
EP0297838A3 (en) 1989-03-15
DE3870996D1 (en) 1992-06-17
EP0297838A2 (en) 1989-01-04
EP0297838B1 (en) 1992-05-13
US4835788A (en) 1989-05-30

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