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JPS6485522A - Open-phase breaker - Google Patents

Open-phase breaker

Info

Publication number
JPS6485522A
JPS6485522A JP24206787A JP24206787A JPS6485522A JP S6485522 A JPS6485522 A JP S6485522A JP 24206787 A JP24206787 A JP 24206787A JP 24206787 A JP24206787 A JP 24206787A JP S6485522 A JPS6485522 A JP S6485522A
Authority
JP
Japan
Prior art keywords
phase
open
line
voltage
detecting means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24206787A
Other languages
Japanese (ja)
Other versions
JPH0828937B2 (en
Inventor
Yoshihisa Ishigami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP62242067A priority Critical patent/JPH0828937B2/en
Publication of JPS6485522A publication Critical patent/JPS6485522A/en
Publication of JPH0828937B2 publication Critical patent/JPH0828937B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Emergency Protection Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the danger of electrical shock from being generated, by inserting a normally closed auxiliary contact into the detection line of N-phase, and by applying one side voltage of voltage sides between A-phase and B-phase, to the detection input terminal of an open-phase detecting means. CONSTITUTION:As an open-phase breaker A, by the abnormal voltage of a single-phase three-line system power line, open phase is detected, and then, the switch means of a thyristor SCR is turned ON, and the trip coil L of a main contact S1 is excited, and the main contact S1 is released. Then, into the detection line lN of N-phase, the normally closed side contact (a) of an auxiliary contact S2 driven interlocked with the main contact S1 is inserted, and to the detection input terminal of an open-phase detecting means, one side voltage of voltage sides between A-phase and B-phase is applied via a resistor R1. The phase detecting means is IC-formed, and is composed of a comparator CP1, a waveform shaping circuit WS, and a delay circuit TD. Then, counter- connection can be performed, and even if the detection line lN of the N-phase is used in a state that the line lN is put out of place, electrical shock is prevented from being received.
JP62242067A 1987-09-26 1987-09-26 Phase breaker Expired - Fee Related JPH0828937B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242067A JPH0828937B2 (en) 1987-09-26 1987-09-26 Phase breaker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242067A JPH0828937B2 (en) 1987-09-26 1987-09-26 Phase breaker

Publications (2)

Publication Number Publication Date
JPS6485522A true JPS6485522A (en) 1989-03-30
JPH0828937B2 JPH0828937B2 (en) 1996-03-21

Family

ID=17083786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242067A Expired - Fee Related JPH0828937B2 (en) 1987-09-26 1987-09-26 Phase breaker

Country Status (1)

Country Link
JP (1) JPH0828937B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149146U (en) * 1987-03-18 1988-09-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63149146U (en) * 1987-03-18 1988-09-30

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display

Also Published As

Publication number Publication date
JPH0828937B2 (en) 1996-03-21

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees