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JPS648296A - Production of silicon dioxide film - Google Patents

Production of silicon dioxide film

Info

Publication number
JPS648296A
JPS648296A JP16299487A JP16299487A JPS648296A JP S648296 A JPS648296 A JP S648296A JP 16299487 A JP16299487 A JP 16299487A JP 16299487 A JP16299487 A JP 16299487A JP S648296 A JPS648296 A JP S648296A
Authority
JP
Japan
Prior art keywords
sio2
anode
substrate
production
silicon dioxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16299487A
Other languages
Japanese (ja)
Inventor
Akimitsu Hishinuma
Shigeo Hayashi
Takuji Aida
Masaki Kitaoka
Hideo Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP16299487A priority Critical patent/JPS648296A/en
Publication of JPS648296A publication Critical patent/JPS648296A/en
Pending legal-status Critical Current

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  • Silicon Compounds (AREA)

Abstract

PURPOSE:To uniformly form an SiO2 film on the surface of an Al substrate as the anode by immersing the substrate to be treated in a hydrosiliconfluoric acid soln. supersatd. with SiO2 and supplying electric current between the substrate as the anode and the cathode. CONSTITUTION:A hydrosiliconfluoric acid soln. 1 having 0.1-4.0mol./l concn. is supersatd. with negatively charged SiO2 in the form of particles, complex ions, sol, gel, colloid, etc. A Cu electrode as the cathode 4 and an Al substrate to be treated as the anode 3 are immersed in the soln. 1 at -5-70 deg.C and electric current is supplied from a constant-current power source 2 at 70mA-5A/cm<2> current density. The negatively charged SiO2 electrodeposits on the anode 3 and an SiO2 film having an arbitrary shape is easily formed.
JP16299487A 1987-06-30 1987-06-30 Production of silicon dioxide film Pending JPS648296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16299487A JPS648296A (en) 1987-06-30 1987-06-30 Production of silicon dioxide film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16299487A JPS648296A (en) 1987-06-30 1987-06-30 Production of silicon dioxide film

Publications (1)

Publication Number Publication Date
JPS648296A true JPS648296A (en) 1989-01-12

Family

ID=15765181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16299487A Pending JPS648296A (en) 1987-06-30 1987-06-30 Production of silicon dioxide film

Country Status (1)

Country Link
JP (1) JPS648296A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616233A (en) * 1996-05-01 1997-04-01 National Science Council Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature
AT409273B (en) * 2000-08-28 2002-07-25 Friedrich Dr Kroener Electrochemical deposition of a dopant-containing silicate film on the surface of small silicon plates for the production of solar cells
JP2009184913A (en) * 2009-02-20 2009-08-20 Shibaura Institute Of Technology Glass material recovery method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023349A (en) * 1973-07-04 1975-03-13
JPS5025448A (en) * 1973-07-06 1975-03-18
JPS6033233A (en) * 1983-07-27 1985-02-20 Nippon Sheet Glass Co Ltd Preparation of glass coated with silicon oxide

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023349A (en) * 1973-07-04 1975-03-13
JPS5025448A (en) * 1973-07-06 1975-03-18
JPS6033233A (en) * 1983-07-27 1985-02-20 Nippon Sheet Glass Co Ltd Preparation of glass coated with silicon oxide

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5616233A (en) * 1996-05-01 1997-04-01 National Science Council Method for making a fluorinated silicon dioxide layer on silicon substrate by anodic oxidation at room temperature
AT409273B (en) * 2000-08-28 2002-07-25 Friedrich Dr Kroener Electrochemical deposition of a dopant-containing silicate film on the surface of small silicon plates for the production of solar cells
JP2009184913A (en) * 2009-02-20 2009-08-20 Shibaura Institute Of Technology Glass material recovery method

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