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JPS6482674A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6482674A
JPS6482674A JP24160787A JP24160787A JPS6482674A JP S6482674 A JPS6482674 A JP S6482674A JP 24160787 A JP24160787 A JP 24160787A JP 24160787 A JP24160787 A JP 24160787A JP S6482674 A JPS6482674 A JP S6482674A
Authority
JP
Japan
Prior art keywords
electrode
gate
thin film
film transistor
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24160787A
Other languages
Japanese (ja)
Inventor
Minoru Kanbara
Nobuyuki Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP24160787A priority Critical patent/JPS6482674A/en
Priority to US07/241,304 priority patent/US5032883A/en
Publication of JPS6482674A publication Critical patent/JPS6482674A/en
Priority to US07/503,268 priority patent/US5003356A/en
Priority to US07/503,270 priority patent/US5055899A/en
Priority to US07/503,269 priority patent/US5166085A/en
Priority to US07/831,002 priority patent/US5229644A/en
Priority to US08/041,537 priority patent/US5327001A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To reduce a capacity component generated between a gate electrode and a source electrode and to improve an S/N ratio by reducing the area of the superposing region of the gate electrode and the source electrode. CONSTITUTION:In a thin film transistor 19, its source electrode 15 is formed to be smaller than its drain region 16, and the superposing area of the electrode 15 and a gate electrode 12 is extremely smaller than that of the drain and gate electrodes 16 and 12. Accordingly, a gate-source capacity CGS presented between the electrodes 12 and 15 is extremely small. If an equivalent capacity CLC between the opposite electrodes facing through a pixel electrode 18 and a liquid crystal is 0.1PF, the voltage drop V of the source electrode is extremely small. Accordingly, the electrode 18 can be miniaturized. Since the electrode 16 is so formed as to surround the electrode 15, its substantial channel width can be increased, thereby providing large driving capacity of the thin film transistor.
JP24160787A 1987-09-09 1987-09-25 Thin film transistor Pending JPS6482674A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP24160787A JPS6482674A (en) 1987-09-25 1987-09-25 Thin film transistor
US07/241,304 US5032883A (en) 1987-09-09 1988-09-07 Thin film transistor and method of manufacturing the same
US07/503,268 US5003356A (en) 1987-09-09 1990-04-02 Thin film transistor array
US07/503,270 US5055899A (en) 1987-09-09 1990-04-02 Thin film transistor
US07/503,269 US5166085A (en) 1987-09-09 1990-04-02 Method of manufacturing a thin film transistor
US07/831,002 US5229644A (en) 1987-09-09 1992-02-05 Thin film transistor having a transparent electrode and substrate
US08/041,537 US5327001A (en) 1987-09-09 1993-04-01 Thin film transistor array having single light shield layer over transistors and gate and drain lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24160787A JPS6482674A (en) 1987-09-25 1987-09-25 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6482674A true JPS6482674A (en) 1989-03-28

Family

ID=17076834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24160787A Pending JPS6482674A (en) 1987-09-09 1987-09-25 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6482674A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049952A (en) * 1989-12-30 1991-09-17 Samsung Electron Devices Co., Ltd. Thin film transistor for use in a flat plate display
US5183271A (en) * 1990-01-25 1993-02-02 Nok Corporation Sealing device and manufacturing method of the same
US5414283A (en) * 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance
US5595697A (en) * 1990-01-25 1997-01-21 Nok Corporation Method of manufacturing a sealing device
KR20020016311A (en) * 2000-08-25 2002-03-04 주식회사 현대 디스플레이 테크놀로지 Liquid crystal display device of thin film transistor
WO2002031887A1 (en) * 2000-10-12 2002-04-18 Sanyo Electric Co., Ltd. Transistor and display comprising it
KR100336898B1 (en) * 1998-12-30 2003-06-09 주식회사 현대 디스플레이 테크놀로지 Thin film transistor of liquid crystal display device
US6664569B2 (en) * 2000-06-09 2003-12-16 Lg. Philips Lcd Co., Ltd. Liquid crystal display device array substrate and method of manufacturing the same
KR20040032603A (en) * 2002-10-10 2004-04-17 비오이 하이디스 테크놀로지 주식회사 Digital x-ray detector
JP2004274050A (en) * 2003-03-04 2004-09-30 Samsung Electronics Co Ltd An amorphous-silicon thin film transistor and a shift register including the same.
JP2005093633A (en) * 2003-09-17 2005-04-07 Sony Corp Field effect transistor
JP2006310636A (en) * 2005-04-28 2006-11-09 Lg Phillips Lcd Co Ltd Thin film transistor
JP2007173307A (en) * 2005-12-19 2007-07-05 Lg Phillips Lcd Co Ltd Thin film transistor
KR100767631B1 (en) * 2001-06-19 2007-10-17 엘지.필립스 엘시디 주식회사 Manufacturing method of array substrate for liquid crystal display device
JP2009086118A (en) * 2007-09-28 2009-04-23 Epson Imaging Devices Corp Liquid crystal display device and electronic device
JP2009288625A (en) * 2008-05-30 2009-12-10 Sony Corp Electronic circuit and panel
US7688392B2 (en) 2006-04-06 2010-03-30 Chunghwa Picture Tubes, Ltd. Pixel structure including a gate having an opening and an extension line between the data line and the source
CN105116653A (en) * 2015-09-14 2015-12-02 深超光电（深圳）有限公司 Display panel
JP2016225991A (en) * 2008-11-28 2016-12-28 株式会社半導体エネルギー研究所 Semiconductor device, display device, display module, and electronic apparatus
JP2022095719A (en) * 2009-01-16 2022-06-28 株式会社半導体エネルギー研究所 Semiconductor device
JP2023178298A (en) * 2009-10-09 2023-12-14 株式会社半導体エネルギー研究所 light emitting display device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192369A (en) * 1984-03-13 1985-09-30 Matsushita Electric Ind Co Ltd thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192369A (en) * 1984-03-13 1985-09-30 Matsushita Electric Ind Co Ltd thin film transistor

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049952A (en) * 1989-12-30 1991-09-17 Samsung Electron Devices Co., Ltd. Thin film transistor for use in a flat plate display
US5183271A (en) * 1990-01-25 1993-02-02 Nok Corporation Sealing device and manufacturing method of the same
US5595697A (en) * 1990-01-25 1997-01-21 Nok Corporation Method of manufacturing a sealing device
US5414283A (en) * 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance
KR100336898B1 (en) * 1998-12-30 2003-06-09 주식회사 현대 디스플레이 테크놀로지 Thin film transistor of liquid crystal display device
US6664569B2 (en) * 2000-06-09 2003-12-16 Lg. Philips Lcd Co., Ltd. Liquid crystal display device array substrate and method of manufacturing the same
KR20020016311A (en) * 2000-08-25 2002-03-04 주식회사 현대 디스플레이 테크놀로지 Liquid crystal display device of thin film transistor
WO2002031887A1 (en) * 2000-10-12 2002-04-18 Sanyo Electric Co., Ltd. Transistor and display comprising it
KR100798787B1 (en) * 2000-10-12 2008-01-29 산요덴키가부시키가이샤 Transistor and display device having same
JP2008004957A (en) * 2000-10-12 2008-01-10 Seiko Epson Corp Transistor and display device including the same
US6897482B2 (en) 2000-10-12 2005-05-24 Sanyo Electric Co., Ltd. Transistor and display comprising it
KR100767631B1 (en) * 2001-06-19 2007-10-17 엘지.필립스 엘시디 주식회사 Manufacturing method of array substrate for liquid crystal display device
KR20040032603A (en) * 2002-10-10 2004-04-17 비오이 하이디스 테크놀로지 주식회사 Digital x-ray detector
US8008690B2 (en) 2003-03-04 2011-08-30 Samsung Electronics Co., Ltd. Amorphous-silicon thin film transistor and shift register having the same
US8610179B2 (en) 2003-03-04 2013-12-17 Samsung Display Co., Ltd. Amorphous-silicon thin film transistor and shift register having the same
JP2004274050A (en) * 2003-03-04 2004-09-30 Samsung Electronics Co Ltd An amorphous-silicon thin film transistor and a shift register including the same.
JP2005093633A (en) * 2003-09-17 2005-04-07 Sony Corp Field effect transistor
JP2006310636A (en) * 2005-04-28 2006-11-09 Lg Phillips Lcd Co Ltd Thin film transistor
JP2007173307A (en) * 2005-12-19 2007-07-05 Lg Phillips Lcd Co Ltd Thin film transistor
US7688392B2 (en) 2006-04-06 2010-03-30 Chunghwa Picture Tubes, Ltd. Pixel structure including a gate having an opening and an extension line between the data line and the source
JP2009086118A (en) * 2007-09-28 2009-04-23 Epson Imaging Devices Corp Liquid crystal display device and electronic device
JP2009288625A (en) * 2008-05-30 2009-12-10 Sony Corp Electronic circuit and panel
US10971075B2 (en) 2008-11-28 2021-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US11776483B2 (en) 2008-11-28 2023-10-03 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US9941308B2 (en) 2008-11-28 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US10008519B1 (en) 2008-11-28 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US12131706B2 (en) 2008-11-28 2024-10-29 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US10304873B2 (en) 2008-11-28 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US10629134B2 (en) 2008-11-28 2020-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US12046203B2 (en) 2008-11-28 2024-07-23 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US11250785B2 (en) 2008-11-28 2022-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
JP2016225991A (en) * 2008-11-28 2016-12-28 株式会社半導体エネルギー研究所 Semiconductor device, display device, display module, and electronic apparatus
US11527208B2 (en) 2008-11-28 2022-12-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
JP2023076500A (en) * 2009-01-16 2023-06-01 株式会社半導体エネルギー研究所 liquid crystal display
US11735133B2 (en) 2009-01-16 2023-08-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
JP2022095719A (en) * 2009-01-16 2022-06-28 株式会社半導体エネルギー研究所 Semiconductor device
US12027133B2 (en) 2009-01-16 2024-07-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
JP2023178298A (en) * 2009-10-09 2023-12-14 株式会社半導体エネルギー研究所 light emitting display device
US12224376B2 (en) 2009-10-09 2025-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including a first pixel and a second pixel and an oxide semiconductor region overlapping a light-emitting region
CN105116653A (en) * 2015-09-14 2015-12-02 深超光电（深圳）有限公司 Display panel
CN105116653B (en) * 2015-09-14 2019-02-15 深超光电（深圳）有限公司 display panel

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