[go: up one dir, main page]

JPS6476492A - Bipolar ram - Google Patents

Bipolar ram

Info

Publication number
JPS6476492A
JPS6476492A JP62232196A JP23219687A JPS6476492A JP S6476492 A JPS6476492 A JP S6476492A JP 62232196 A JP62232196 A JP 62232196A JP 23219687 A JP23219687 A JP 23219687A JP S6476492 A JPS6476492 A JP S6476492A
Authority
JP
Japan
Prior art keywords
resistance
current
diode
rmc
fluctuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62232196A
Other languages
Japanese (ja)
Inventor
Hiroaki Nanbu
Kunihiko Yamaguchi
Kazuo Kanetani
Kenichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Japan Display Inc
Original Assignee
Hitachi Device Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Device Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Device Engineering Co Ltd
Priority to JP62232196A priority Critical patent/JPS6476492A/en
Publication of JPS6476492A publication Critical patent/JPS6476492A/en
Pending legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enlarge an operating margin by arranging a diode whose first constant voltage source is connected through a resistance, the base emitter of a trangister in parallel at an anode side and compensating the fluctuation of the high resistance of a memory cell at the collector side. CONSTITUTION:In order to allow the current of a constant current source CS for information holding current, namely, the current to flow to a transistor Q3 to be 0.128mA, for example, it is necessary to make the characteristics of the transistor Q3 and a diode D1 equal and to also make the current flowing to a resistance RB be 0.128mA. Now, when a power source voltage Vcc is made to 5.2V and the voltage of the diode D1 is made to 0.8V, it is necessary to allow the resistance RB to be (5.2-0.8)/0.128=34.4kOMEGA. Thus, since the resistance RB to compensate the fluctuation of a high resistance RMC is used in parallel with three numbers by the same resistance at the RMC, the operating margin of a memory cell can be enlarged without inviting the increasing of a chip area.
JP62232196A 1987-09-18 1987-09-18 Bipolar ram Pending JPS6476492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232196A JPS6476492A (en) 1987-09-18 1987-09-18 Bipolar ram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232196A JPS6476492A (en) 1987-09-18 1987-09-18 Bipolar ram

Publications (1)

Publication Number Publication Date
JPS6476492A true JPS6476492A (en) 1989-03-22

Family

ID=16935497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232196A Pending JPS6476492A (en) 1987-09-18 1987-09-18 Bipolar ram

Country Status (1)

Country Link
JP (1) JPS6476492A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100511211B1 (en) * 1998-09-04 2005-08-31 닛폰 유니카 컴퍼니 리미티드 Container, container receiving sleeve pipe cap and process of unloading and loading

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100511211B1 (en) * 1998-09-04 2005-08-31 닛폰 유니카 컴퍼니 리미티드 Container, container receiving sleeve pipe cap and process of unloading and loading

Similar Documents

Publication Publication Date Title
EP0360333A3 (en) Temperature threshold sensing circuit
GB1516711A (en) Integrated circuit memory cells and memories utilising such cells
JPS5538016A (en) Semiconductor memory device
FR2641626B1 (en) STABLE REFERENCE VOLTAGE GENERATOR
US4754430A (en) Memory cell with dual collector, active load transistors
US4574233A (en) High impedance current source
EP0393863A3 (en) Semiconductor memory device
KR930014992A (en) Semiconductor device with one or more memory cells
US4491780A (en) Temperature compensated voltage reference circuit
KR840003892A (en) Semiconductor Memory with Dynamic Discharge Circuit
JPS6476492A (en) Bipolar ram
GB1217017A (en) Storage cell circuitry
JPS5460529A (en) Semiconductor memory circuit
SU1244718A1 (en) Generator of reading level
SU1290491A1 (en) Device with s-shaped voltage-current characteristics
JPS55117791A (en) Bipolar memory cell
EP0391828A3 (en) High speed memory cell with multiple port capability
JPS55132596A (en) Channel injection type memory unit
JPS6454926A (en) Bipolar logic circuit
JPS57133592A (en) Storage device
SU1338053A1 (en) Adder
JPS5760709A (en) Bias system for amplifying circuit
JPS6433794A (en) Semiconductor storage device
JPS5685849A (en) Semiconductor integrated circuit
JPS6417507A (en) Current mirror circuit