JPS6475902A - Method for measuring refractive index and film thickness - Google Patents
Method for measuring refractive index and film thicknessInfo
- Publication number
- JPS6475902A JPS6475902A JP23411887A JP23411887A JPS6475902A JP S6475902 A JPS6475902 A JP S6475902A JP 23411887 A JP23411887 A JP 23411887A JP 23411887 A JP23411887 A JP 23411887A JP S6475902 A JPS6475902 A JP S6475902A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- refractive index
- incident angles
- sample
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 abstract 5
- 238000002310 reflectometry Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
PURPOSE:To measure the refractive index and the thickness of a dielectric thin film simply and highly accurately, by inputting monochromatic light into the thin film on a substrate, and detecting three incident angles which give the three limit values of the change in energy reflectivities. CONSTITUTION:A sample to be measured Ob is formed from an SiO thin film by sputtering on an Si substrate and mounted on a turntable 10. An arm 12 is provided coaxially with the turntable 10 and turned at a rotary angle twice the rotary angle of the table 10. A sensor 14, which receives the reflected light from the sample Ob, is fixed to the tip of the arm 12. As a first step, He-Ne laser 16 is inputted into the sample Ob to allow the incident angle to changed. The three incident angles which give the three limit values of the change in energy reflectivities are detected. Then, in a second step, the refractive index and the thickness of the thin film are operated and computed with the order of interference as parameters based on the two incident angles of the three incident angles. As a third step, the refractive index and the thickness of the thin film are determined by the operation based on these numerical values and the remaining incident angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23411887A JPS6475902A (en) | 1987-09-18 | 1987-09-18 | Method for measuring refractive index and film thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23411887A JPS6475902A (en) | 1987-09-18 | 1987-09-18 | Method for measuring refractive index and film thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6475902A true JPS6475902A (en) | 1989-03-22 |
Family
ID=16965915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23411887A Pending JPS6475902A (en) | 1987-09-18 | 1987-09-18 | Method for measuring refractive index and film thickness |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6475902A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19733890C2 (en) * | 1996-08-04 | 2000-03-16 | Matsushita Electric Ind Co Ltd | Method for measuring a medium and device therefor |
| JP2004279296A (en) * | 2003-03-18 | 2004-10-07 | Japan Science & Technology Agency | Film thickness acquisition method |
| JP2010197398A (en) * | 2002-09-09 | 2010-09-09 | Zygo Corp | Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures |
| JPWO2021014689A1 (en) * | 2019-07-24 | 2021-01-28 | ||
| CN113755806A (en) * | 2021-09-10 | 2021-12-07 | 四川旭虹光电科技有限公司 | Reflective magnetron sputtering coating thickness monitoring device, coating machine and method |
-
1987
- 1987-09-18 JP JP23411887A patent/JPS6475902A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19733890C2 (en) * | 1996-08-04 | 2000-03-16 | Matsushita Electric Ind Co Ltd | Method for measuring a medium and device therefor |
| US6172752B1 (en) | 1996-08-04 | 2001-01-09 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for simultaneously interferometrically measuring optical characteristics in a noncontact manner |
| JP2010197398A (en) * | 2002-09-09 | 2010-09-09 | Zygo Corp | Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures |
| JP2004279296A (en) * | 2003-03-18 | 2004-10-07 | Japan Science & Technology Agency | Film thickness acquisition method |
| JPWO2021014689A1 (en) * | 2019-07-24 | 2021-01-28 | ||
| WO2021014689A1 (en) * | 2019-07-24 | 2021-01-28 | 国立大学法人北海道大学 | Thickness measurement device and method |
| CN113755806A (en) * | 2021-09-10 | 2021-12-07 | 四川旭虹光电科技有限公司 | Reflective magnetron sputtering coating thickness monitoring device, coating machine and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6475903A (en) | Method for measuring refractive index and film thickness | |
| EP0286195A3 (en) | Method and apparatus for detecting low concentrations of (bio)- chemical components in a test medium using surface plasmon resonance | |
| CA2146300A1 (en) | Refractive Index Measurement of Spectacle Lenses | |
| CN109655015B (en) | A non-contact method for measuring the inclination angle and the slight variation of the thickness of the processed surface of the sample | |
| CN101609002B (en) | A method for measuring the optical bandgap of semiconductor thin film materials | |
| JPS6475902A (en) | Method for measuring refractive index and film thickness | |
| CN112485805A (en) | Laser triangular displacement sensor and measuring method thereof | |
| JPS6435306A (en) | Incidence angle determining method for refractive index and film thickness measurement | |
| AU586266B2 (en) | Contact-free measuring apparatus having an F-THeta-corrected objective | |
| JPS55103404A (en) | Measuring method of film thickness | |
| JPS6412208A (en) | Measurement of film thickness and/or refractive index | |
| CN113959988A (en) | Tandem SPR sensor based on capillary optical fiber | |
| JPS57179648A (en) | Reflectivity measuring apparatus | |
| JPS56111419A (en) | Optical position detector | |
| CN111141931A (en) | A device and method for speed calibration of laser interferometer | |
| SU947637A1 (en) | Device for measuring specimen flat surface reflection factor | |
| CN2135767Y (en) | Super-precision surface measurer | |
| CN111337227B (en) | VBA-based substrate optical constant calculation method | |
| JPS533283A (en) | Referactive index distribution form measurement device | |
| JPS5257843A (en) | Measuring device for thickness of film | |
| JPH0384401A (en) | Method and instrument for measuring film thickness | |
| JPS6298237A (en) | Method and device for measuring bulk density of porous glass sintered body | |
| SU1024703A1 (en) | Method of checking-dielectric-based dielectric film thickness and refraction factor | |
| KR910005047A (en) | Method and apparatus for determining noncontact, oran, of phosphate layer thickness and composition on phosphate coating surface | |
| JPS56130607A (en) | Measuring method for glaze rise angle of thin film circuit parts |