JPS6475529A - Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof - Google Patents
Dimethyl(substituted phenyl)silylmethylpolysilane and production thereofInfo
- Publication number
- JPS6475529A JPS6475529A JP23328687A JP23328687A JPS6475529A JP S6475529 A JPS6475529 A JP S6475529A JP 23328687 A JP23328687 A JP 23328687A JP 23328687 A JP23328687 A JP 23328687A JP S6475529 A JPS6475529 A JP S6475529A
- Authority
- JP
- Japan
- Prior art keywords
- amino
- substituted
- phenyldisilane
- dichloro
- trimethyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 title 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 title 1
- -1 dichloro-trimethyl-substituted phenyldisilane Chemical class 0.000 abstract 3
- 239000003513 alkali Substances 0.000 abstract 2
- 125000003545 alkoxy group Chemical group 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 238000006482 condensation reaction Methods 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- 238000009835 boiling Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000012776 electronic material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- RQJRLVCBMAKXFG-UHFFFAOYSA-N phenyl(silyl)silane Chemical class [SiH3][SiH2]C1=CC=CC=C1 RQJRLVCBMAKXFG-UHFFFAOYSA-N 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 1
- 125000006239 protecting group Chemical group 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Landscapes
- Silicon Polymers (AREA)
Abstract
PURPOSE:To obtain the titled polymer useful for e.g. electronic materials such as photoresist materials, organic semiconductors, and optical information recording materials, by condensation reaction, in the presence of an alkali (alkaline earth) metal, of a dichloro-trimethyl-substituted phenyldisilane. CONSTITUTION:The objective polymer constituted of recurring unit of formula II (R is OH, amino, vinyl, lower alkyl, lower alkoxy or halogen) can be obtained by condensation reaction, in the presence of an alkali (alkaline earth) metal, generally at temperatures ranging from 0 deg.C to the boiling point of the solvent to used for the reaction for 1-50hr, of a 1,1-dichloro-1,2,2-trimethyl-2-substituted phenyldisilane of formula I (R' is OH, amino, vinyl, lower alkyl, lower alkoxy, halogen, OH carrying protective group, or amino).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23328687A JPS6475529A (en) | 1987-09-17 | 1987-09-17 | Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23328687A JPS6475529A (en) | 1987-09-17 | 1987-09-17 | Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6475529A true JPS6475529A (en) | 1989-03-22 |
| JPH0424365B2 JPH0424365B2 (en) | 1992-04-24 |
Family
ID=16952720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23328687A Granted JPS6475529A (en) | 1987-09-17 | 1987-09-17 | Dimethyl(substituted phenyl)silylmethylpolysilane and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6475529A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003162058A (en) * | 2001-11-28 | 2003-06-06 | Seiko Epson Corp | Method for forming film pattern, film pattern, method for manufacturing semiconductor device, semiconductor device, method for manufacturing electro-optical device, and electro-optical device |
-
1987
- 1987-09-17 JP JP23328687A patent/JPS6475529A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003162058A (en) * | 2001-11-28 | 2003-06-06 | Seiko Epson Corp | Method for forming film pattern, film pattern, method for manufacturing semiconductor device, semiconductor device, method for manufacturing electro-optical device, and electro-optical device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0424365B2 (en) | 1992-04-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |