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JPS6474717A - Formation of thin film - Google Patents

Formation of thin film

Info

Publication number
JPS6474717A
JPS6474717A JP23281887A JP23281887A JPS6474717A JP S6474717 A JPS6474717 A JP S6474717A JP 23281887 A JP23281887 A JP 23281887A JP 23281887 A JP23281887 A JP 23281887A JP S6474717 A JPS6474717 A JP S6474717A
Authority
JP
Japan
Prior art keywords
film
substrate
window
reaction chamber
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23281887A
Other languages
Japanese (ja)
Inventor
Shoichi Tanimura
Kosaku Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23281887A priority Critical patent/JPS6474717A/en
Publication of JPS6474717A publication Critical patent/JPS6474717A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent coming-off of a film stuck to a window and generation of inferior products so as to reduce time for maintaining a device, by using a window for leading light into a reaction chamber in order to hold temperature of the window unchanged at the time of forming a film and at the time of taking out a substrate after forming the film so as to form a thin film. CONSTITUTION:A substrate 1 for forming a film is placed on a substrate holder 2 so as to control temperature by means of a substrate heater. The substrate 1 and the substrate holder 2 are placed inside a reaction chamber 3. Formation of the film is so performed by emitting ultraviolet rays by an ultraviolet ray lamp for leading light into the reaction chamber 3 through a transmission window 6 as to irradiate gas flowing inside the reaction chamber 3. The film 9 stuck to the surface on the side of the reaction chamber of the ultraviolet ray transmission window 6 changes its temperature in company with switching-on and switching-off of the substrate heater 4 and the ultraviolet-ray lamp 5. In order to check its change, the window 6 is heated with an infrared ray lamp 8 so as to control for always holding fixed temperature. A shutter 7 prevents the substrate 1 from being heated by radiation heat from the ultraviolet ray transmission window 6 at the time of keeping the substrate temperature low. Thereby, several times of film formation and continued carrying-in and carrying- out can be performed without generating coming-off of the film.
JP23281887A 1987-09-17 1987-09-17 Formation of thin film Pending JPS6474717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23281887A JPS6474717A (en) 1987-09-17 1987-09-17 Formation of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23281887A JPS6474717A (en) 1987-09-17 1987-09-17 Formation of thin film

Publications (1)

Publication Number Publication Date
JPS6474717A true JPS6474717A (en) 1989-03-20

Family

ID=16945258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23281887A Pending JPS6474717A (en) 1987-09-17 1987-09-17 Formation of thin film

Country Status (1)

Country Link
JP (1) JPS6474717A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005005258A (en) * 2003-05-19 2005-01-06 Ushio Inc Excimer lamp light emitting device
EP1158574A4 (en) * 1999-10-07 2009-05-27 Ushio Electric Inc Ultraviolet radiation producing apparatus
US8398813B2 (en) 1999-08-13 2013-03-19 Tokyo Electron Limited Processing apparatus and processing method
CN107632501A (en) * 2017-09-21 2018-01-26 武汉华星光电技术有限公司 A kind of apparatus for baking and baking method
WO2019059062A1 (en) 2017-09-21 2019-03-28 株式会社フジクラ Antenna device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8398813B2 (en) 1999-08-13 2013-03-19 Tokyo Electron Limited Processing apparatus and processing method
EP1158574A4 (en) * 1999-10-07 2009-05-27 Ushio Electric Inc Ultraviolet radiation producing apparatus
JP2005005258A (en) * 2003-05-19 2005-01-06 Ushio Inc Excimer lamp light emitting device
CN107632501A (en) * 2017-09-21 2018-01-26 武汉华星光电技术有限公司 A kind of apparatus for baking and baking method
WO2019059062A1 (en) 2017-09-21 2019-03-28 株式会社フジクラ Antenna device

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