[go: up one dir, main page]

JPS6473619A - Method and apparatus for low-pressure process - Google Patents

Method and apparatus for low-pressure process

Info

Publication number
JPS6473619A
JPS6473619A JP23031487A JP23031487A JPS6473619A JP S6473619 A JPS6473619 A JP S6473619A JP 23031487 A JP23031487 A JP 23031487A JP 23031487 A JP23031487 A JP 23031487A JP S6473619 A JPS6473619 A JP S6473619A
Authority
JP
Japan
Prior art keywords
discharge
passages
sequentially
controlled
closing means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23031487A
Other languages
Japanese (ja)
Other versions
JPH0770526B2 (en
Inventor
Atsushi Takizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62230314A priority Critical patent/JPH0770526B2/en
Publication of JPS6473619A publication Critical patent/JPS6473619A/en
Publication of JPH0770526B2 publication Critical patent/JPH0770526B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To uniformly discharge gas from a plasma processor by providing a rotary plate having openings so disposed as to sequentially open at least one of discharge holes and to sequentially close the remaining holes. CONSTITUTION:In order to set a plurality of discharge passages for connecting a processing tank to a main discharge pipe 8, i.e., for example 8 discharge holes 6 formed at a bottom plate 5 and discharge pipes 7 corresponding thereto to open and closed states, closing means 9 provided on the way of the pipes 7 are, for example, formed on the passages. The opening/closing means 9 are so controlled as to sequentially open at least one of the passages and to sequentially close the remaining passages. Opening/closing means 91 provided on the way of the pipes 7 connected to discharge holes 62 are so controlled as to open the discharge passage, and the other opening/closing means 9 are so controlled as to close the corresponding discharge passages. Thus, all the passages are controlled to be sequentially opened and closed.
JP62230314A 1987-09-14 1987-09-14 Decompression processing device Expired - Lifetime JPH0770526B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230314A JPH0770526B2 (en) 1987-09-14 1987-09-14 Decompression processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230314A JPH0770526B2 (en) 1987-09-14 1987-09-14 Decompression processing device

Publications (2)

Publication Number Publication Date
JPS6473619A true JPS6473619A (en) 1989-03-17
JPH0770526B2 JPH0770526B2 (en) 1995-07-31

Family

ID=16905889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230314A Expired - Lifetime JPH0770526B2 (en) 1987-09-14 1987-09-14 Decompression processing device

Country Status (1)

Country Link
JP (1) JPH0770526B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582475A (en) * 1991-09-24 1993-04-02 Nec Kyushu Ltd Plasma etching device
JP2000508842A (en) * 1997-01-30 2000-07-11 フユージョン システムズ コーポレイション Dual exhaust window arrangement for wafer plasma processing equipment
JP2003502501A (en) * 1999-06-19 2003-01-21 ゼニテックインコーポレイテッド Chemical vapor deposition reactor and thin film forming method using the same
KR100389449B1 (en) * 2001-06-26 2003-06-27 주성엔지니어링(주) vacuum plate have symmetrical air-load block
JP2006032344A (en) * 2004-07-13 2006-02-02 Nordson Corp Ultra high speed uniform plasma processing system
JP2015062225A (en) * 2013-09-03 2015-04-02 ラム リサーチ コーポレーションLam Research Corporation System, method and apparatus for coordinating pressure pulses and rf modulation in small volume confined process reactor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717134A (en) * 1980-07-04 1982-01-28 Kokusai Electric Co Ltd Device for decompression and reaction
JPS61147529A (en) * 1984-12-21 1986-07-05 Toshiba Corp Dry etching device of semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717134A (en) * 1980-07-04 1982-01-28 Kokusai Electric Co Ltd Device for decompression and reaction
JPS61147529A (en) * 1984-12-21 1986-07-05 Toshiba Corp Dry etching device of semiconductor wafer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582475A (en) * 1991-09-24 1993-04-02 Nec Kyushu Ltd Plasma etching device
JP2000508842A (en) * 1997-01-30 2000-07-11 フユージョン システムズ コーポレイション Dual exhaust window arrangement for wafer plasma processing equipment
JP2003502501A (en) * 1999-06-19 2003-01-21 ゼニテックインコーポレイテッド Chemical vapor deposition reactor and thin film forming method using the same
KR100389449B1 (en) * 2001-06-26 2003-06-27 주성엔지니어링(주) vacuum plate have symmetrical air-load block
JP2006032344A (en) * 2004-07-13 2006-02-02 Nordson Corp Ultra high speed uniform plasma processing system
JP2015062225A (en) * 2013-09-03 2015-04-02 ラム リサーチ コーポレーションLam Research Corporation System, method and apparatus for coordinating pressure pulses and rf modulation in small volume confined process reactor
US10636625B2 (en) 2013-09-03 2020-04-28 Lam Research Corporation System for coordinating pressure pulses and RF modulation in a small volume confined process reactor

Also Published As

Publication number Publication date
JPH0770526B2 (en) 1995-07-31

Similar Documents

Publication Publication Date Title
ATE208961T1 (en) VACUUM SYSTEM
JPS5729577A (en) Automatic continuous sputtering apparatus
DK0859661T3 (en) Apparatus and method for multiple chemical reactions
GR3032184T3 (en) Gas manifold for an off-axis sputter apparatus
FR2600082B1 (en) THERMOCHEMICAL PROCESS FOR SURFACE TREATMENT IN A REACTIVE GAS PLASMA, AND PARTS TREATED BY THIS PROCESS
WO2002014810A3 (en) Method and apparatus for tuning a plasma reactor chamber
MY115047A (en) Method and apparatus for degassing sulfur
JPS6473619A (en) Method and apparatus for low-pressure process
ATE234507T1 (en) DEVICE FOR TREATING SUBSTRATES
GB0015846D0 (en) Apparatus and process for supplying gas
DE59705559D1 (en) DEVICE FOR TREATING SUBSTRATES IN A FLUID CONTAINER
JPS555765A (en) Method and apparatus for throwing-in and discharging of solid granular substance for high pressure system
JPS5552859A (en) Distribution/accumulation apparatus for sheet material
JPS57121236A (en) Plasma processing and device thereof
JPS57190668A (en) Continuous painting and baking apparatus
JPS6450414A (en) Vacuum treatment apparatus
JPS6453076A (en) High vacuum pump protecting system in high vacuum exhaust system
JPS5763676A (en) Continuous sputtering device
JPS57121235A (en) Plasma processing and device thereof
JPS551815A (en) Ultraviolet irradiator for variously worked articles of ultraviolet-curing resin
JPS5735681A (en) Vacuum device
JPS56163254A (en) Pretreatment of printed plate for plating
JPS55154075A (en) Automatic starting method for fuel battery
JPS5765344A (en) Cleaning method of separating plate type centrifugal cleaner
JPS5547438A (en) Light-sound analyzer