JPS6473596A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS6473596A JPS6473596A JP62229544A JP22954487A JPS6473596A JP S6473596 A JPS6473596 A JP S6473596A JP 62229544 A JP62229544 A JP 62229544A JP 22954487 A JP22954487 A JP 22954487A JP S6473596 A JPS6473596 A JP S6473596A
- Authority
- JP
- Japan
- Prior art keywords
- status
- unit amplifying
- sheared
- amplifying circuits
- action
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
Landscapes
- Dram (AREA)
Abstract
PURPOSE:To speed up a reading action by allowing temporarily one sheared switch MOSFET to be selectively made into an ON status in accordance with a prescribed signal into an OFF status at the original point of the operating condition of the unit amplifying circuit of a sense amplifier. CONSTITUTION:In a dynamic type RAM to adopt a sheared sense amplifier system, one sheared switch MOSFET to be selectively made into the ON status in accordance with the prescribed signal is temporarily made into the OFF status at the original point of transmitting the fine read signal of a selected memory cell MC to a corresponding unit amplifying circuits USA of sense amplifiers SA0 and SA1 and making these unit amplifying circuits into the operating status all at once. Consequently, the respective unit amplifying circuits USA of the sense amplifiers SA0 and SA1 are released from the comparatively large load capacity of corresponding complementary data lines. Thus, the amplifying action of the respective unit amplifying circuits USA of the sense amplifiers SA0 and SA1 is speeded up and the action of the dynamic type RAM is speeded up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62229544A JPS6473596A (en) | 1987-09-16 | 1987-09-16 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62229544A JPS6473596A (en) | 1987-09-16 | 1987-09-16 | Semiconductor memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6473596A true JPS6473596A (en) | 1989-03-17 |
Family
ID=16893829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62229544A Pending JPS6473596A (en) | 1987-09-16 | 1987-09-16 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6473596A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03241589A (en) * | 1990-02-16 | 1991-10-28 | Mitsubishi Electric Corp | Shared sense control signal generation circuit in dynamic semiconductor storage device |
| US6212110B1 (en) | 1998-12-24 | 2001-04-03 | Hitachi, Ltd. | Semiconductor memory device |
-
1987
- 1987-09-16 JP JP62229544A patent/JPS6473596A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03241589A (en) * | 1990-02-16 | 1991-10-28 | Mitsubishi Electric Corp | Shared sense control signal generation circuit in dynamic semiconductor storage device |
| US6212110B1 (en) | 1998-12-24 | 2001-04-03 | Hitachi, Ltd. | Semiconductor memory device |
| US6459627B1 (en) | 1998-12-24 | 2002-10-01 | Hitachi, Ltd. | Semiconductor memory device |
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