JPS6469592A - Liquid epitaxial apparatus - Google Patents
Liquid epitaxial apparatusInfo
- Publication number
- JPS6469592A JPS6469592A JP22607787A JP22607787A JPS6469592A JP S6469592 A JPS6469592 A JP S6469592A JP 22607787 A JP22607787 A JP 22607787A JP 22607787 A JP22607787 A JP 22607787A JP S6469592 A JPS6469592 A JP S6469592A
- Authority
- JP
- Japan
- Prior art keywords
- molten liquid
- substrate
- cylinder
- liquid
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title abstract 10
- 239000000758 substrate Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 3
- 238000007598 dipping method Methods 0.000 abstract 2
- 238000010992 reflux Methods 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To suppress the fluctuation of the temperature distribution of a molten liquid caused by the refluxing of volatile component in the molten liquid and to uniformize the thickness of grown crystal in a liquid epitaxial growth using a dipping method, by placing a cylinder to separate a substrate dipped in the molten liquid from the wall of the vessel. CONSTITUTION:A substrate 14 is dipped in a molten liquid 12 in a vessel 11 by a dipping method and a crystal is grown on the substrate 14. The following parts are added to the above liquid epitaxial apparatus. The apparatus is provided with a cylinder 16 immersed in the molten liquid 12 in the course of crystal growth and separating the substrate 14 from the inner wall of the vessel 11 at a part above the molten liquid 12 and containing the substrate 14. Preferably, a blade 17 to stir the molten liquid 12 by the rotation of the cylinder 16 is attached to at least one of the outer surface or the inner surface of the cylinder 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22607787A JPS6469592A (en) | 1987-09-09 | 1987-09-09 | Liquid epitaxial apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22607787A JPS6469592A (en) | 1987-09-09 | 1987-09-09 | Liquid epitaxial apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6469592A true JPS6469592A (en) | 1989-03-15 |
Family
ID=16839456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22607787A Pending JPS6469592A (en) | 1987-09-09 | 1987-09-09 | Liquid epitaxial apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6469592A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810306A3 (en) * | 1996-05-31 | 2000-03-01 | Kabushiki Kaisha Toshiba | Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder |
-
1987
- 1987-09-09 JP JP22607787A patent/JPS6469592A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0810306A3 (en) * | 1996-05-31 | 2000-03-01 | Kabushiki Kaisha Toshiba | Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder |
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