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JPS6466970A - Mosfet with overcurrent protecting function - Google Patents

Mosfet with overcurrent protecting function

Info

Publication number
JPS6466970A
JPS6466970A JP22301887A JP22301887A JPS6466970A JP S6466970 A JPS6466970 A JP S6466970A JP 22301887 A JP22301887 A JP 22301887A JP 22301887 A JP22301887 A JP 22301887A JP S6466970 A JPS6466970 A JP S6466970A
Authority
JP
Japan
Prior art keywords
voltage
current
mosfet
current mirror
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22301887A
Other languages
Japanese (ja)
Other versions
JP2523678B2 (en
Inventor
Yukitsugu Hirota
Teruyoshi Mihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP62223018A priority Critical patent/JP2523678B2/en
Priority to US07/209,237 priority patent/US4893158A/en
Priority to DE3821065A priority patent/DE3821065C3/en
Publication of JPS6466970A publication Critical patent/JPS6466970A/en
Application granted granted Critical
Publication of JP2523678B2 publication Critical patent/JP2523678B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simplify manufacturing process and to reduce a chip are by detecting a current of a current mirror using a threshold characteristic of a voltage between a base and an emitter of a bipolar transistor and isolating a gate of a MOSFET of a current mirror circuit and stopping only a voltage applied to the gate of a main current circuit to interrupt the current when something is wrong. CONSTITUTION:Usually, a voltage Vs across a galvanometer resistance Fs is set at a value smaller than a threshold voltage VBE between a base and a emitter of a bipolar transistor T1 so that the bipolar transistor T1 turns off and the operation of a current mirror is assured. When an accident happens and a load current is increased, the voltage Vs is increased and when its value exceeds the voltage VBE of 0.6V between the base and the emitter of the T1, the T1 turns on and a gate voltage VG1 of a main MOSFET.M1 is decreased. On the other hand, since a voltage is continuously applied to a current mirror MOSFET.M1 the voltage Vs becomes more large and a VG1 further decreased by a positive feedback action. When an overcurrent exceeds a limit value, a current hardly flows in the main MOSFET.M1 and element is protected from the overcurrent.
JP62223018A 1987-06-22 1987-09-08 MOSFET with overcurrent protection function Expired - Fee Related JP2523678B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62223018A JP2523678B2 (en) 1987-09-08 1987-09-08 MOSFET with overcurrent protection function
US07/209,237 US4893158A (en) 1987-06-22 1988-06-20 MOSFET device
DE3821065A DE3821065C3 (en) 1987-06-22 1988-06-22 Integrated circuit with a power MOSFET and an overload protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62223018A JP2523678B2 (en) 1987-09-08 1987-09-08 MOSFET with overcurrent protection function

Publications (2)

Publication Number Publication Date
JPS6466970A true JPS6466970A (en) 1989-03-13
JP2523678B2 JP2523678B2 (en) 1996-08-14

Family

ID=16791541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62223018A Expired - Fee Related JP2523678B2 (en) 1987-06-22 1987-09-08 MOSFET with overcurrent protection function

Country Status (1)

Country Link
JP (1) JP2523678B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH053289A (en) * 1991-01-09 1993-01-08 Nec Corp Power semiconductor device
JP2000012839A (en) * 1998-06-25 2000-01-14 Nec Kansai Ltd Semiconductor device
US8598942B2 (en) 2011-07-06 2013-12-03 Fuji Electric Co., Ltd. Current correction circuit for power semiconductor device and current correction method
US8644038B2 (en) 2010-10-22 2014-02-04 Fuji Electric Co., Ltd. Current detection circuit for a power semiconductor device
US8659864B2 (en) 2010-10-08 2014-02-25 Fuji Electric Co., Ltd. Power semiconductor device current detector circuit and detection method
WO2014097739A1 (en) * 2012-12-17 2014-06-26 富士電機株式会社 Semiconductor device and current detection circuit using said semiconductor device
WO2017169777A1 (en) * 2016-03-29 2017-10-05 三菱電機株式会社 Electric power converter

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023032984A (en) 2021-08-27 2023-03-09 富士電機株式会社 semiconductor module

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123755A (en) * 1982-01-19 1983-07-23 Toshiba Corp Semiconductor device
JPS62143450A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Composite semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58123755A (en) * 1982-01-19 1983-07-23 Toshiba Corp Semiconductor device
JPS62143450A (en) * 1985-12-18 1987-06-26 Hitachi Ltd Composite semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH053289A (en) * 1991-01-09 1993-01-08 Nec Corp Power semiconductor device
JP2000012839A (en) * 1998-06-25 2000-01-14 Nec Kansai Ltd Semiconductor device
US8659864B2 (en) 2010-10-08 2014-02-25 Fuji Electric Co., Ltd. Power semiconductor device current detector circuit and detection method
US8644038B2 (en) 2010-10-22 2014-02-04 Fuji Electric Co., Ltd. Current detection circuit for a power semiconductor device
US8598942B2 (en) 2011-07-06 2013-12-03 Fuji Electric Co., Ltd. Current correction circuit for power semiconductor device and current correction method
WO2014097739A1 (en) * 2012-12-17 2014-06-26 富士電機株式会社 Semiconductor device and current detection circuit using said semiconductor device
JPWO2014097739A1 (en) * 2012-12-17 2017-01-12 富士電機株式会社 Semiconductor device
US9720029B2 (en) 2012-12-17 2017-08-01 Fuji Electric Co., Ltd. Semiconductor device including a sense element and a main element, and current detector circuit using the semiconductor device
WO2017169777A1 (en) * 2016-03-29 2017-10-05 三菱電機株式会社 Electric power converter
JPWO2017169777A1 (en) * 2016-03-29 2018-06-14 三菱電機株式会社 Silicon carbide semiconductor device and power converter

Also Published As

Publication number Publication date
JP2523678B2 (en) 1996-08-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees