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JPS6465863A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS6465863A
JPS6465863A JP62222518A JP22251887A JPS6465863A JP S6465863 A JPS6465863 A JP S6465863A JP 62222518 A JP62222518 A JP 62222518A JP 22251887 A JP22251887 A JP 22251887A JP S6465863 A JPS6465863 A JP S6465863A
Authority
JP
Japan
Prior art keywords
gate
connecting sections
fet
wirings
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62222518A
Other languages
Japanese (ja)
Inventor
Masao Hamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62222518A priority Critical patent/JPS6465863A/en
Publication of JPS6465863A publication Critical patent/JPS6465863A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve a device in a noise property and decrease its wiring area by a method wherein a bypass capacitor between a power source and the ground is provided to an unused transistor gate or a vacant region. CONSTITUTION:A gate 3c is made to make a diffusion layer 5 short-circuit through connecting sections 7e-7f and a wiring 9c, and a gate 4c is made to make a diffusion layer 6 short-circuit through connecting sections 7g-7h and a wiring 10b as well. The gate 3c and the connecting sections 7g-7h are connected with a power source through the intermediary of wirings 9d and 10c and a through-hole 19, and the gate 7c and the connecting sections 7e-7f are grounded through the intermediary of wirings 9b and 9e. By this structure, a FET 11 and a FET 12 are constructed, which are composed of the gate 3c and the connecting points 7e-7f and the gate 4c and the connecting sections 7g-7h respectively, and the FET 11 and the FET 12 are grounded through the wirings 9c and 10b respectively, so that only gate capacitors Cg1 and Cg2 are made to be effective and serve as a bypass capacitor between the power source and a ground 2.
JP62222518A 1987-09-04 1987-09-04 Semiconductor integrated circuit device Pending JPS6465863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62222518A JPS6465863A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62222518A JPS6465863A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6465863A true JPS6465863A (en) 1989-03-13

Family

ID=16783683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62222518A Pending JPS6465863A (en) 1987-09-04 1987-09-04 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6465863A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370965A (en) * 1991-06-20 1992-12-24 Fujitsu Ltd Semiconductor device
JPH05152511A (en) * 1991-11-26 1993-06-18 Sharp Corp Capacitor circuit
EP1326344A3 (en) * 2001-12-21 2007-03-21 NEC Electronics Corporation Universal logic module and ASIC using the same
US7728362B2 (en) 2006-01-20 2010-06-01 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161437A (en) * 1984-09-03 1986-03-29 Toshiba Corp Semiconductor integrated circuit device
JPS62123739A (en) * 1985-11-25 1987-06-05 Hitachi Ltd Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6161437A (en) * 1984-09-03 1986-03-29 Toshiba Corp Semiconductor integrated circuit device
JPS62123739A (en) * 1985-11-25 1987-06-05 Hitachi Ltd Semiconductor integrated circuit device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370965A (en) * 1991-06-20 1992-12-24 Fujitsu Ltd Semiconductor device
JPH05152511A (en) * 1991-11-26 1993-06-18 Sharp Corp Capacitor circuit
EP1326344A3 (en) * 2001-12-21 2007-03-21 NEC Electronics Corporation Universal logic module and ASIC using the same
US7728362B2 (en) 2006-01-20 2010-06-01 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures
US8188516B2 (en) 2006-01-20 2012-05-29 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures
US8298888B2 (en) 2006-01-20 2012-10-30 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures

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