[go: up one dir, main page]

JPS6464358A - Schottky-type diode - Google Patents

Schottky-type diode

Info

Publication number
JPS6464358A
JPS6464358A JP22022387A JP22022387A JPS6464358A JP S6464358 A JPS6464358 A JP S6464358A JP 22022387 A JP22022387 A JP 22022387A JP 22022387 A JP22022387 A JP 22022387A JP S6464358 A JPS6464358 A JP S6464358A
Authority
JP
Japan
Prior art keywords
layer
electrode
photoresist
schottky
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22022387A
Other languages
Japanese (ja)
Inventor
Satoshi Kayama
Nobuo Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi ULSI Engineering Corp
Hitachi Ltd
Original Assignee
Hitachi ULSI Engineering Corp
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi ULSI Engineering Corp, Hitachi Ltd filed Critical Hitachi ULSI Engineering Corp
Priority to JP22022387A priority Critical patent/JPS6464358A/en
Publication of JPS6464358A publication Critical patent/JPS6464358A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce a leakage current in a reverse direction by a method wherein impurity concentration in an n-layer under a Schottky electrode is reduced sufficiently to reduce a capacitance value, and an impurity region whose concentration is close to that in an n<+> layer is formed between a high-concentration impurity region on the side of an ohmic electrode and the Schottky electrode so that its thickness can be thinner than that of the n<+> layer. CONSTITUTION:An SiO2 thin film 35 is formed on a GaAs semiinsulating substrate 5; a photoresist 31 is applied to it. A window is opened at the photoresist; ions are implanted; an n-layer 32 is formed. Then, an electrode metal tungsten silicide film to be used as a Schottky electrode 4 of a diode or as a gate of a transistor is applied; an electrode metal is processed. Then, this assembly is covered with an SiO2 film 36; an n' layer 2 is formed. In this case, the n' layer 2 is formed in a manner which is self-aligned with the electrode metal. Then, the photoresist 31 is removed; after that, this assembly is etched in such a way that the SiO2 film is left only at a side part of the Schottky electrode 4; a side wall 10 is formed; one part is covered with the photoresist 31; an n<+> layer 3 is formed. In addition, AuGe, Ni and Au are deposited on a part where the window has been opened. This assembly is heat-treated and alloyed; an ohmic electrode 6 is formed.
JP22022387A 1987-09-04 1987-09-04 Schottky-type diode Pending JPS6464358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22022387A JPS6464358A (en) 1987-09-04 1987-09-04 Schottky-type diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22022387A JPS6464358A (en) 1987-09-04 1987-09-04 Schottky-type diode

Publications (1)

Publication Number Publication Date
JPS6464358A true JPS6464358A (en) 1989-03-10

Family

ID=16747809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22022387A Pending JPS6464358A (en) 1987-09-04 1987-09-04 Schottky-type diode

Country Status (1)

Country Link
JP (1) JPS6464358A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376812A (en) * 1989-04-12 1994-12-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376812A (en) * 1989-04-12 1994-12-27 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Similar Documents

Publication Publication Date Title
US5153683A (en) Field effect transistor
EP0055932A1 (en) Schottky gate electrode for a compound semiconductor device, and method of manufacturing it
EP0100529A1 (en) High speed field-effect transistor employing heterojunction
JPS57152166A (en) Manufacture of schottky barrier gate field effect transistor
US5227644A (en) Heterojunction field effect transistor with improve carrier density and mobility
US4866491A (en) Heterojunction field effect transistor having gate threshold voltage capability
JPS6464358A (en) Schottky-type diode
JPS5691477A (en) Semiconductor
JPS57152168A (en) Manufacture of schottky barrier gate field effect transistor
US5837570A (en) Heterostructure semiconductor device and method of fabricating same
JP2645993B2 (en) Field effect type semiconductor device and method of manufacturing the same
JPS57198661A (en) Semiconductor device
JP2689960B2 (en) Semiconductor device
JPS5752174A (en) Multigate field effect transistor
JPS59222966A (en) Semiconductor device
JPS5749229A (en) Manufacture of gaas device
JPS6412580A (en) Hetero-junction field-effect transistor
JPS6461067A (en) Field-effect transistor and manufacture thereof
JPS57114284A (en) Field effect transistor
JPS6433934A (en) Semiconductor device
JPS63173375A (en) Schottky junction type field-effect transistor
JPS5749239A (en) Manufacture of gaas device
JPS57145377A (en) Manufacture of schottky barrier type field effect transistor
JPS647571A (en) Manufacture of semiconductor device
JPS6471175A (en) Gallium arsenide (gaas) field effect transistor